<?xml version="1.0" encoding="UTF-8"?> <article key="pdf/15889" mdate="2012-01-23 00:00:00"> <author>A. Ould-Abbas and M. Bouchaour and and M. Madani and D. Trari and O. Zeggai and M. Boukais and N.-E.Chabane-Sari</author> <title>Contribution to the Study of Thermal Conductivity of Porous Silicon Used In Thermal Sensors</title> <pages>111 - 113</pages> <year>2012</year> <volume>6</volume> <number>1</number> <journal>International Journal of Physical and Mathematical Sciences</journal> <ee>https://publications.waset.org/pdf/15889</ee> <url>https://publications.waset.org/vol/61</url> <publisher>World Academy of Science, Engineering and Technology</publisher> <abstract>The porous silicon (PS), formed from the anodization of a p type substrate silicon, consists of a network organized in a pseudocolumn as structure of multiple side ramifications. Structural microtopology can be interpreted as the fraction of the interconnected solid phase contributing to thermal transport. The reduction of dimensions of silicon of each nanocristallite during the oxidation induced a reduction in thermal conductivity. Integration of thermal sensors in the Microsystems silicon requires an effective insulation of the sensor element. Indeed, the low thermal conductivity of PS consists in a very promising way in the fabrication of integrated thermal Microsystems.In this work we are interesting in the measurements of thermal conductivity (on the surface and in depth) of PS by the microRaman spectroscopy. The thermal conductivity is studied according to the parameters of anodization (initial doping and current density. We also, determine porosity of samples by spectroellipsometry.</abstract> <index>Open Science Index 61, 2012</index> </article>