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About: Degenerate semiconductor
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</li> </ul> <ul class="navbar-nav ms-auto"> <li class="nav-item"> <a class="nav-link" href="/fct/" title="Switch to /fct endpoint"><i class="bi-box-arrow-up-right"></i> Faceted Browser </a> </li> <li class="nav-item"> <a class="nav-link" href="/sparql/" title="Switch to /sparql endpoint"><i class="bi-box-arrow-up-right"></i> Sparql Endpoint </a> </li> </ul> </div> </div> </nav> <div style="margin-bottom: 60px"></div> <!-- /navbar --> <!-- page-header --> <section> <div class="container-xl"> <div class="row"> <div class="col"> <h1 id="title" class="display-6"><b>About:</b> <a href="http://dbpedia.org/resource/Degenerate_semiconductor">Degenerate semiconductor</a> </h1> </div> </div> <div class="row"> <div class="col"> <div class="text-muted"> <span class="text-nowrap">An Entity of Type: <a href="http://dbpedia.org/ontology/ChemicalCompound">chemical compound</a>, </span> <span class="text-nowrap">from Named Graph: <a href="http://dbpedia.org">http://dbpedia.org</a>, </span> <span class="text-nowrap">within Data Space: <a href="http://dbpedia.org">dbpedia.org</a></span> </div> </div> </div> <div class="row pt-2"> <div class="col-xs-9 col-sm-10"> <p class="lead">A degenerate semiconductor is a semiconductor with such a high level of doping that the material starts to act more like a metal than as a semiconductor. Unlike non-degenerate semiconductors, these kind of semiconductor do not obey law of mass action, which relates intrinsic carrier concentration with temperature and bandgap. Another well known example is indium tin oxide. Because its plasma frequency is in the IR-range it is a fairly good metallic conductor, but transparent in the visible range of the spectrum.</p> </div> </div> </div> </section> <!-- page-header --> <!-- property-table --> <section> <div class="container-xl"> <div class="row"> <div class="table-responsive"> <table class="table table-hover table-sm table-light"> <thead> <tr> <th class="col-xs-3 ">Property</th> <th class="col-xs-9 px-3">Value</th> </tr> </thead> <tbody> <tr class="odd"><td class="col-2"><a class="uri" href="http://dbpedia.org/ontology/abstract"><small>dbo:</small>abstract</a> </td><td class="col-10 text-break"><ul> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="ar" >شبه الموصل المتفسخ (بالإنجليزية: degenerate semiconductor) هو شبه موصل يشاب بدرجة عالية حتى تبدأ المادة تسلك سلوكا يشبه أكثر سلوك المعدن (من حيث الموصلية الكهربائية مثلا). بوجود تركيز عالي من ذرات الإشابة تصبح هذه الذرات (وبالتالي سوياتها الطاقية) قريبة جدا من بعضها فتكوّن نطاقا (عصابة) من الطاقة. في هذه الحالة تتوضع سوية فيرمي ضمن نطاق التوصيل، الفجوة الطاقية تصبح صغيرة جدا أو تختفي. لقد كان كل من السيلكون والجرمانيوم قبل عام 1940 غير متواجد بشكل نقي لذلك تم تصنيفهما تاريخيا كمعادن بسبب هذه الحالة.</span><small> (ar)</small></span></li> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="cs" >Degenerovaný polovodič (někdy se označuje jako silně dotovaný polovodič) je příměsový polovodič, který obsahuje nadměrné množství příměsového prvku. Po tomto předotování má výsledný polovodič tolik volných nosičů náboje, že ztrácí většinu vlastností polovodiče a jeho chování se blíží elektrickým vodičům. Koncentrace příměsi, kdy se polovodič stává degenerovaným, je velmi přibližně 1017 cm−3 (tj. 1023 m−3 nebo jinak 1023 atomů příměsi v 1 m3 polovodiče).</span><small> (cs)</small></span></li> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="de" >Ein entarteter Halbleiter ist ein Halbleiter, der so stark dotiert (oder verunreinigt) ist, dass er so gut elektrisch leitet wie Metalle. Durch die Fremdatome rückt das Fermi-Niveau an das Leitungsband heran oder liegt darin, die Bandlücke wird sehr klein oder verschwindet (englisch band-gap narrowing oder gap-shift). Erklären lässt sich der Effekt über die Abschirmung des Gitterpotentials durch die zusätzlich eingebrachten, freien Ladungsträger. Die im Leitungs- und Valenzband lassen sich nicht mehr mit der Boltzmann-Statistik beschreiben. Beim entarteten Halbleiter liegt das Fermi-Niveau nicht innerhalb des verbotenen Bandes, sondern im Leitungsband (n-Halbleiter) oder innerhalb des Valenzbandes (p-Halbleiter). Dies tritt auf bei extrem hoher Dotierung (größer 1019 pro cm3). Beim Kontakt eines Metalls mit einem entarteten n-Halbeiter hat die Schottkybarriere eine so geringe Ausdehnung, dass sie in beiden Richtungen durchtunnelt werden kann. Es liegt dann ein ohmscher Kontakt vor. Silicium und Germanium waren vor 1940 (bei Silicium vor Kenntnis des Zonenschmelzverfahrens) nicht sehr rein verfügbar, weshalb sie aufgrund dieses Umstands historisch als Metalle eingestuft wurden.</span><small> (de)</small></span></li> <li><span class="literal"><span property="dbo:abstract" lang="en" >A degenerate semiconductor is a semiconductor with such a high level of doping that the material starts to act more like a metal than as a semiconductor. Unlike non-degenerate semiconductors, these kind of semiconductor do not obey law of mass action, which relates intrinsic carrier concentration with temperature and bandgap. At moderate doping levels the dopant atoms create individual doping levels that can often be considered as localized states that can donate electrons or holes by (or an ) to the conduction or valence bands respectively. At high enough impurity concentrations the individual impurity atoms may become close enough neighbors that their doping levels merge into an impurity band and the behavior of such a system ceases to show the typical traits of a semiconductor, e.g. its increase in conductivity with temperature. On the other hand, a degenerate semiconductor still has far fewer charge carriers than a true metal so that its behavior is in many ways intermediary between semiconductor and metal. Many copper chalcogenides are degenerate p-type semiconductors with relatively large numbers of holes in their valence band. An example is the system LaCuOS1−xSex with Mg doping. It is a wide gap p-type degenerate semiconductor. The hole concentration does not change with temperature, a typical trait of degenerate semiconductors. Another well known example is indium tin oxide. Because its plasma frequency is in the IR-range it is a fairly good metallic conductor, but transparent in the visible range of the spectrum.</span><small> (en)</small></span></li> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="fr" >Un semi-conducteur dégénéré est un semi-conducteur dopé au point d'avoir un comportement plus proche de celui d'un métal que d'un semi-conducteur.</span><small> (fr)</small></span></li> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="ja" >縮退半導体とは、高濃度の不純物（ドーパント）が添加されたことでフェルミエネルギーが伝導帯や価電子帯の中に存在する不純物半導体のこと。</span><small> (ja)</small></span></li> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="ru" >Вы́рожденный полупроводни́к — полупроводник, концентрация примесей в котором настолько велика, что собственные электрические свойства практически не проявляются, а проявляются в основном свойства примеси. У вырожденного полупроводника уровень Ферми лежит внутри одной из разрешённых зон (зоны проводимости, валентной зоны) или же внутри запрещённой зоны на расстоянии по энергии не более ( — постоянная Больцмана, — абсолютная температура) от границ разрешённых зон. Вырожденные полупроводники получают путём сильного легирования собственных полупроводников.</span><small> (ru)</small></span></li> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="zh" >简并半导体（英語：degenerate semiconductor，香港作簡並半導體，台湾作退化半導體、退化態半導體、過半半導體）。是杂质半导体的一种，它具有较高的掺杂浓度，因而它表现得更接近金属。</span><small> (zh)</small></span></li> <li style="display:none;"><span class="literal"><span property="dbo:abstract" lang="uk" >Ви́роджений напівпровідни́к — напівпровідник із високою концентрацією носіїв заряду, властивості якого схожі на властивості металу. Протилежний термін — невироджений напівпровідник. Виродження напівпровідника відбувається при великій концентрації домішок (донорів чи акцепторів).</span><small> (uk)</small></span></li> </ul></td></tr><tr class="even"><td class="col-2"><a class="uri" href="http://dbpedia.org/ontology/wikiPageID"><small>dbo:</small>wikiPageID</a> </td><td class="col-10 text-break"><ul> <li><span class="literal"><span property="dbo:wikiPageID" datatype="xsd:integer" >18638809</span><small> (xsd:integer)</small></span></li> </ul></td></tr><tr class="odd"><td class="col-2"><a class="uri" href="http://dbpedia.org/ontology/wikiPageLength"><small>dbo:</small>wikiPageLength</a> </td><td class="col-10 text-break"><ul> <li><span class="literal"><span property="dbo:wikiPageLength" datatype="xsd:nonNegativeInteger" >2811</span><small> (xsd:nonNegativeInteger)</small></span></li> </ul></td></tr><tr class="even"><td class="col-2"><a class="uri" href="http://dbpedia.org/ontology/wikiPageRevisionID"><small>dbo:</small>wikiPageRevisionID</a> </td><td class="col-10 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تتوضع سوية فيرمي ضمن نطاق التوصيل، الفجوة الطاقية تصبح صغيرة جدا أو تختفي. لقد كان كل من السيلكون والجرمانيوم قبل عام 1940 غير متواجد بشكل نقي لذلك تم تصنيفهما تاريخيا كمعادن بسبب هذه الحالة.</span><small> (ar)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:comment" lang="cs" >Degenerovaný polovodič (někdy se označuje jako silně dotovaný polovodič) je příměsový polovodič, který obsahuje nadměrné množství příměsového prvku. Po tomto předotování má výsledný polovodič tolik volných nosičů náboje, že ztrácí většinu vlastností polovodiče a jeho chování se blíží elektrickým vodičům. Koncentrace příměsi, kdy se polovodič stává degenerovaným, je velmi přibližně 1017 cm−3 (tj. 1023 m−3 nebo jinak 1023 atomů příměsi v 1 m3 polovodiče).</span><small> (cs)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:comment" lang="fr" >Un semi-conducteur dégénéré est un semi-conducteur dopé au point d'avoir un comportement plus proche de celui d'un métal que d'un semi-conducteur.</span><small> (fr)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:comment" lang="ja" >縮退半導体とは、高濃度の不純物（ドーパント）が添加されたことでフェルミエネルギーが伝導帯や価電子帯の中に存在する不純物半導体のこと。</span><small> (ja)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:comment" lang="ru" >Вы́рожденный полупроводни́к — полупроводник, концентрация примесей в котором настолько велика, что собственные электрические свойства практически не проявляются, а проявляются в основном свойства примеси. У вырожденного полупроводника уровень Ферми лежит внутри одной из разрешённых зон (зоны проводимости, валентной зоны) или же внутри запрещённой зоны на расстоянии по энергии не более ( — постоянная Больцмана, — абсолютная температура) от границ разрешённых зон. Вырожденные полупроводники получают путём сильного легирования собственных полупроводников.</span><small> (ru)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:comment" lang="zh" >简并半导体（英語：degenerate semiconductor，香港作簡並半導體，台湾作退化半導體、退化態半導體、過半半導體）。是杂质半导体的一种，它具有较高的掺杂浓度，因而它表现得更接近金属。</span><small> (zh)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:comment" lang="uk" >Ви́роджений напівпровідни́к — напівпровідник із високою концентрацією носіїв заряду, властивості якого схожі на властивості металу. Протилежний термін — невироджений напівпровідник. Виродження напівпровідника відбувається при великій концентрації домішок (донорів чи акцепторів).</span><small> (uk)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:comment" lang="de" >Ein entarteter Halbleiter ist ein Halbleiter, der so stark dotiert (oder verunreinigt) ist, dass er so gut elektrisch leitet wie Metalle. Durch die Fremdatome rückt das Fermi-Niveau an das Leitungsband heran oder liegt darin, die Bandlücke wird sehr klein oder verschwindet (englisch band-gap narrowing oder gap-shift). Erklären lässt sich der Effekt über die Abschirmung des Gitterpotentials durch die zusätzlich eingebrachten, freien Ladungsträger. Die im Leitungs- und Valenzband lassen sich nicht mehr mit der Boltzmann-Statistik beschreiben.</span><small> (de)</small></span></li> <li><span class="literal"><span property="rdfs:comment" lang="en" >A degenerate semiconductor is a semiconductor with such a high level of doping that the material starts to act more like a metal than as a semiconductor. Unlike non-degenerate semiconductors, these kind of semiconductor do not obey law of mass action, which relates intrinsic carrier concentration with temperature and bandgap. Another well known example is indium tin oxide. Because its plasma frequency is in the IR-range it is a fairly good metallic conductor, but transparent in the visible range of the spectrum.</span><small> (en)</small></span></li> </ul></td></tr><tr class="odd"><td class="col-2"><a class="uri" href="http://www.w3.org/2000/01/rdf-schema#label"><small>rdfs:</small>label</a> </td><td class="col-10 text-break"><ul> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="ar" >شبه الموصل المتفسخ</span><small> (ar)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="cs" >Degenerovaný polovodič</span><small> (cs)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="de" >Entarteter Halbleiter</span><small> (de)</small></span></li> <li><span class="literal"><span property="rdfs:label" lang="en" >Degenerate semiconductor</span><small> (en)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="fr" >Semi-conducteur dégénéré</span><small> (fr)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="ja" >縮退半導体</span><small> (ja)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="ru" >Вырожденный полупроводник</span><small> (ru)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="uk" >Вироджений напівпровідник</span><small> (uk)</small></span></li> <li style="display:none;"><span class="literal"><span property="rdfs:label" lang="zh" >简并半导体</span><small> (zh)</small></span></li> </ul></td></tr><tr class="even"><td class="col-2"><a class="uri" href="http://www.w3.org/2002/07/owl#sameAs"><small>owl:</small>sameAs</a> </td><td class="col-10 text-break"><ul> <li><span class="literal"><a class="uri" rel="owl:sameAs" resource="http://rdf.freebase.com/ns/m.04grv4l" 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rev="dbo:wikiPageWikiLink" resource="http://dbpedia.org/resource/Doping_(semiconductor)" href="http://dbpedia.org/resource/Doping_(semiconductor)"><small>dbr</small>:Doping_(semiconductor)</a></span></li> <li><span class="literal"><a class="uri" rev="dbo:wikiPageWikiLink" resource="http://dbpedia.org/resource/Semimetal" href="http://dbpedia.org/resource/Semimetal"><small>dbr</small>:Semimetal</a></span></li> <li><span class="literal"><a class="uri" rev="dbo:wikiPageWikiLink" resource="http://dbpedia.org/resource/Degeneracy" href="http://dbpedia.org/resource/Degeneracy"><small>dbr</small>:Degeneracy</a></span></li> <li><span class="literal"><a class="uri" rev="dbo:wikiPageWikiLink" resource="http://dbpedia.org/resource/Binary_compounds_of_silicon" href="http://dbpedia.org/resource/Binary_compounds_of_silicon"><small>dbr</small>:Binary_compounds_of_silicon</a></span></li> <li><span class="literal"><a class="uri" rev="dbo:wikiPageWikiLink" 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