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Search results for: applied voltage

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class="container mt-4"> <div class="row"> <div class="col-md-9 mx-auto"> <form method="get" action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="applied voltage"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 9419</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: applied voltage</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9419</span> A Study on Unidirectional Analog Output Voltage Inverter for Capacitive Load</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sun-Ki%20Hong">Sun-Ki Hong</a>, <a href="https://publications.waset.org/abstracts/search?q=Nam-HeeByeon"> Nam-HeeByeon</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung-Seop%20Lee"> Jung-Seop Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae-Sam%20Kang"> Tae-Sam Kang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> For Common R or R-L load to apply arbitrary voltage, the bridge traditional inverters don’t have any difficulties by PWM method. However for driving some piezoelectric actuator, arbitrary voltage not a pulse but a steady voltage should be applied. Piezoelectric load is considered as R-C load and its voltage does not decrease even though the applied voltage decreases. Therefore it needs some special inverter with circuit that can discharge the capacitive energy. Especially for unidirectional arbitrary voltage driving like as sine wave, it becomes more difficult problem. In this paper, a charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator is proposed. The circuit has charging and discharging switches for increasing and decreasing output voltage. With the proposed simple circuit, the load voltage can have any unidirectional level with tens of bandwidth because the load voltage can be adjusted by switching the charging and discharging switch appropriately. The appropriateness is proved from the simulation of the proposed circuit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DC-DC%20converter" title="DC-DC converter">DC-DC converter</a>, <a href="https://publications.waset.org/abstracts/search?q=analog%20output%20voltage" title=" analog output voltage"> analog output voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=sinusoidal%20drive" title=" sinusoidal drive"> sinusoidal drive</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric%20load" title=" piezoelectric load"> piezoelectric load</a>, <a href="https://publications.waset.org/abstracts/search?q=discharging%20circuit" title=" discharging circuit "> discharging circuit </a> </p> <a href="https://publications.waset.org/abstracts/8464/a-study-on-unidirectional-analog-output-voltage-inverter-for-capacitive-load" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8464.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9418</span> A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae">Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Bo-Bae%20Song"> Bo-Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/80537/a-study-on-esd-protection-circuit-applying-silicon-controlled-rectifier-based-stack-technology-with-high-holding-voltage" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80537.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">548</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9417</span> High-Quality Flavor of Black Belly Pork under Lightning Corona Discharge Using Tesla Coil for High Voltage Education</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hoon%20Jang">Kyung-Hoon Jang</a>, <a href="https://publications.waset.org/abstracts/search?q=Jae-Hyo%20Park"> Jae-Hyo Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwang-Yeop%20Jang"> Kwang-Yeop Jang</a>, <a href="https://publications.waset.org/abstracts/search?q=Dongjin%20Kim"> Dongjin Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The Tesla coil is an electrical resonant transformer circuit designed by inventor Nikola Tesla in 1891. It is used to produce high voltage, low current and high frequency alternating current electricity. Tesla experimented with a number of different configurations consisting of two or sometimes three coupled resonant electric circuits. This paper focuses on development and high voltage education to apply a Tesla coil to cuisine for high quality flavor and taste conditioning as well as high voltage education under 50 kV corona discharge. The result revealed that the velocity of roasted black belly pork by Tesla coil is faster than that of conventional methods such as hot grill and steel plate etc. depending on applied voltage level and applied voltage time. Besides, carbohydrate and crude protein increased, whereas natrium and saccharides significantly decreased after lightning surge by Tesla coil. This idea will be useful in high voltage education and high voltage application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=corona%20discharge" title="corona discharge">corona discharge</a>, <a href="https://publications.waset.org/abstracts/search?q=Tesla%20coil" title=" Tesla coil"> Tesla coil</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20voltage%20application" title=" high voltage application"> high voltage application</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20voltage%20education" title=" high voltage education"> high voltage education</a> </p> <a href="https://publications.waset.org/abstracts/77120/high-quality-flavor-of-black-belly-pork-under-lightning-corona-discharge-using-tesla-coil-for-high-voltage-education" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/77120.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">328</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9416</span> Energy Management System Based on Voltage Fluctuations Minimization for Droop-Controlled Islanded Microgrid</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zahra%20Majd">Zahra Majd</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohsen%20Kalantar"> Mohsen Kalantar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Power management and voltage regulation is one of the most important issues in microgrid (MG) control and scheduling. This paper proposes a multiobjective scheduling formulation that consists of active power costs, voltage fluctuations summation, and technical constraints of MG. Furthermore, load flow and reserve constraints are considered to achieve proper voltage regulation. A modified Jacobian matrix is presented for calculating voltage variations and Mont Carlo simulation is used for generating and reducing scenarios. To convert the problem to a mixed integer linear program, a linearization procedure for nonlinear equations is presented. The proposed model is applied to a typical low-voltage MG and two different cases are investigated. The results show the effectiveness of the proposed model. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=microgrid" title="microgrid">microgrid</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20management%20system" title=" energy management system"> energy management system</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20fluctuations" title=" voltage fluctuations"> voltage fluctuations</a>, <a href="https://publications.waset.org/abstracts/search?q=modified%20Jacobian%20matrix" title=" modified Jacobian matrix"> modified Jacobian matrix</a> </p> <a href="https://publications.waset.org/abstracts/168897/energy-management-system-based-on-voltage-fluctuations-minimization-for-droop-controlled-islanded-microgrid" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/168897.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">91</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9415</span> SCR-Based Advanced ESD Protection Device for Low Voltage Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bo%20Bae%20Song">Bo Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung%20Seok%20Lee"> Byung Seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyun%20young%20Kim"> Hyun young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3, and D4). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/21774/scr-based-advanced-esd-protection-device-for-low-voltage-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/21774.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">575</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9414</span> DG Power Plants Placement and Evaluation of its Effect on Improving Voltage Security Margin in Radial Distribution Networks</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Atabak%20Faramarzpour">Atabak Faramarzpour</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohsen%20Mohammadian"> Mohsen Mohammadian</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this article, we introduce the stability of power system voltage and state DG power plants placement and its effect on improving voltage security margin in radial distribution networks. For this purpose, first, important definitions in voltage stability area such as small and big voltage disturbances, instability, and voltage collapse, and voltage security definitions are stated. Then, according to voltage collapse time, voltage stability is classified and each one's characteristics are stated. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DG%20power%20plants" title="DG power plants">DG power plants</a>, <a href="https://publications.waset.org/abstracts/search?q=evaluation" title=" evaluation"> evaluation</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20security" title=" voltage security"> voltage security</a>, <a href="https://publications.waset.org/abstracts/search?q=radial%20distribution%20networks" title=" radial distribution networks"> radial distribution networks</a> </p> <a href="https://publications.waset.org/abstracts/25147/dg-power-plants-placement-and-evaluation-of-its-effect-on-improving-voltage-security-margin-in-radial-distribution-networks" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/25147.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">670</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9413</span> Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Nur%20Syarafina%20Binti%20Othman">Nur Syarafina Binti Othman</a>, <a href="https://publications.waset.org/abstracts/search?q=Tsubasa%20Jindo"> Tsubasa Jindo</a>, <a href="https://publications.waset.org/abstracts/search?q=Makato%20Yamada"> Makato Yamada</a>, <a href="https://publications.waset.org/abstracts/search?q=Miho%20Tsuyama"> Miho Tsuyama</a>, <a href="https://publications.waset.org/abstracts/search?q=Hitoshi%20Nakano"> Hitoshi Nakano</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=high%20voltage" title="high voltage">high voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=IGBT" title=" IGBT"> IGBT</a>, <a href="https://publications.waset.org/abstracts/search?q=solid%20state%20switch" title=" solid state switch"> solid state switch</a>, <a href="https://publications.waset.org/abstracts/search?q=bipolar%20transistor" title=" bipolar transistor"> bipolar transistor</a> </p> <a href="https://publications.waset.org/abstracts/13067/fast-high-voltage-solid-state-switch-using-insulated-gate-bipolar-transistor-for-discharge-pumped-lasers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/13067.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">552</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9412</span> Modal Analysis of Power System with a Microgrid </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Burak%20Yildirim">Burak Yildirim</a>, <a href="https://publications.waset.org/abstracts/search?q=Muhsin%20Tunay%20Gen%C3%A7o%C4%9Flu"> Muhsin Tunay Gençoğlu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A microgrid (MG) is a small power grid composed of localized medium or low level power generation, storage systems, and loads. In this paper, the effects of a MG on power systems voltage stability are shown. The MG model, designed to demonstrate the effects of the MG, was applied to the IEEE 14 bus power system which is widely used in power system stability studies. Eigenvalue and modal analysis methods were used in simulation studies. In the study results, it is seen that MGs affect system voltage stability positively by increasing system voltage instability limit value for buses of a power system in which MG are placed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=eigenvalue%20analysis" title="eigenvalue analysis">eigenvalue analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=microgrid" title=" microgrid"> microgrid</a>, <a href="https://publications.waset.org/abstracts/search?q=modal%20analysis" title=" modal analysis"> modal analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20stability" title=" voltage stability"> voltage stability</a> </p> <a href="https://publications.waset.org/abstracts/76026/modal-analysis-of-power-system-with-a-microgrid" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/76026.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">372</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9411</span> SCR-Stacking Structure with High Holding Voltage for IO and Power Clamp</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hyun%20Young%20Kim">Hyun Young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Han%20Hee%20Cho">Han Hee Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Sang%20Woon%20Cho"> Sang Woon Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=stack" title=" stack"> stack</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a> </p> <a href="https://publications.waset.org/abstracts/30148/scr-stacking-structure-with-high-holding-voltage-for-io-and-power-clamp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30148.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">557</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9410</span> Improvement of Transient Voltage Response Using PSS-SVC Coordination Based on ANFIS-Algorithm in a Three-Bus Power System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=I%20Made%20Ginarsa">I Made Ginarsa</a>, <a href="https://publications.waset.org/abstracts/search?q=Agung%20Budi%20Muljono"> Agung Budi Muljono</a>, <a href="https://publications.waset.org/abstracts/search?q=I%20Made%20Ari%20Nrartha"> I Made Ari Nrartha</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Transient voltage response appears in power system operation when an additional loading is forced to load bus of power systems. In this research, improvement of transient voltage response is done by using power system stabilizer-static var compensator (PSS-SVC) based on adaptive neuro-fuzzy inference system (ANFIS)-algorithm. The main function of the PSS is to add damping component to damp rotor oscillation through automatic voltage regulator (AVR) and excitation system. Learning process of the ANFIS is done by using off-line method where data learning that is used to train the ANFIS model are obtained by simulating the PSS-SVC conventional. The ANFIS model uses 7 Gaussian membership functions at two inputs and 49 rules at an output. Then, the ANFIS-PSS and ANFIS-SVC models are applied to power systems. Simulation result shows that the response of transient voltage is improved with settling time at the time of 4.25 s. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=improvement" title="improvement">improvement</a>, <a href="https://publications.waset.org/abstracts/search?q=transient%20voltage" title=" transient voltage"> transient voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=PSS-SVC" title=" PSS-SVC"> PSS-SVC</a>, <a href="https://publications.waset.org/abstracts/search?q=ANFIS" title=" ANFIS"> ANFIS</a>, <a href="https://publications.waset.org/abstracts/search?q=settling%20time" title=" settling time"> settling time</a> </p> <a href="https://publications.waset.org/abstracts/4811/improvement-of-transient-voltage-response-using-pss-svc-coordination-based-on-anfis-algorithm-in-a-three-bus-power-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/4811.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">577</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9409</span> Signal On-Off Ratio and Output Frequency Analysis of Semiconductor Electron-Interference Device</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Tomotaka%20Aoki">Tomotaka Aoki</a>, <a href="https://publications.waset.org/abstracts/search?q=Isao%20Tomita"> Isao Tomita</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We examined the on-off ratio and frequency components of output signals from an electron-interference device made of GaAs/AlₓGa₁₋ₓAs by solving the time-dependent Schrödinger's equation on conducting electrons in the channel waveguide of the device. For electron-wave modulation, a periodic voltage of frequency f was applied to the channel. Furthermore, we examined the voltage-amplitude dependence of the signals in time and frequency domains and found that large applied voltage deformed the output-signal waveform and created additional side modes (frequencies) near the modulation frequency f and that there was a trade-off between on-off ratio and side-mode creation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrical%20conduction" title="electrical conduction">electrical conduction</a>, <a href="https://publications.waset.org/abstracts/search?q=electron%20interference" title=" electron interference"> electron interference</a>, <a href="https://publications.waset.org/abstracts/search?q=frequency%20spectrum" title=" frequency spectrum"> frequency spectrum</a>, <a href="https://publications.waset.org/abstracts/search?q=on-off%20ratio" title=" on-off ratio"> on-off ratio</a> </p> <a href="https://publications.waset.org/abstracts/145444/signal-on-off-ratio-and-output-frequency-analysis-of-semiconductor-electron-interference-device" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/145444.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">121</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9408</span> Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo">Yong Seo Koo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jong%20Ho%20Nam"> Jong Ho Nam</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Nam%20Choi"> Yong Nam Choi</a>, <a href="https://publications.waset.org/abstracts/search?q=Dae%20Yeol%20Yoo"> Dae Yeol Yoo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung%20Woo%20Han"> Jung Woo Han</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electro-static%20discharge%20%28ESD%29" title="electro-static discharge (ESD)">electro-static discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=protection%20circuit" title=" protection circuit"> protection circuit</a> </p> <a href="https://publications.waset.org/abstracts/9524/analysis-of-scr-based-esd-protection-circuit-on-holding-voltage-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9524.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9407</span> The Effects of Applied Negative Bias Voltage on Structure and Optical Properties of a-C:H Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=X.%20L.%20Zhou">X. L. Zhou</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Tunmee"> S. Tunmee</a>, <a href="https://publications.waset.org/abstracts/search?q=I.%20Toda"> I. Toda</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20Komatsu"> K. Komatsu</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Ohshio"> S. Ohshio</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Saitoh"> H. Saitoh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Hydrogenated amorphous carbon (a-C:H) films have been synthesized by a radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique with different bias voltage from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical information of all films were studied by X-ray photo electron spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O bonds, and relative carbon (C) and oxygen (O) atomics contents. The O contamination had affected on structure and optical properties. The true density of PLCH and a-C:H films were characterized by X-ray refractivity (XRR) method, showed the result as in the range of 1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The hardness was proportional to the true density of films. In addition, the optical properties i.e. refractive index (n) and extinction coefficient (k) of these films were determined by a spectroscopic ellipsometry (SE) method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k) respectively. These results indicated that the optical properties confirmed the Raman results as presenting the structure changed with applied bias voltage increased. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=negative%20bias%20voltage" title="negative bias voltage">negative bias voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=a-C%3AH%20film" title=" a-C:H film"> a-C:H film</a>, <a href="https://publications.waset.org/abstracts/search?q=oxygen%20contamination" title=" oxygen contamination"> oxygen contamination</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20properties" title=" optical properties"> optical properties</a> </p> <a href="https://publications.waset.org/abstracts/11691/the-effects-of-applied-negative-bias-voltage-on-structure-and-optical-properties-of-a-ch-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/11691.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">482</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9406</span> A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-il%20Do">Kyoung-il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung-seok%20Lee"> Byung-seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-guk%20Chae"> Hee-guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-yun%20Seo%20Yong-seo%20Koo"> Jeong-yun Seo Yong-seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/89519/a-silicon-controlled-rectifier-based-esd-protection-circuit-with-high-holding-voltage-and-high-robustness-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/89519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">397</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9405</span> Analog Voltage Inverter Drive for Capacitive Load with Adaptive Gain Control</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sun-Ki%20Hong">Sun-Ki Hong</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Ho%20Cho"> Yong-Ho Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Seok%20Kim"> Ki-Seok Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae-Sam%20Kang"> Tae-Sam Kang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=analog%20voltage%20inverter" title="analog voltage inverter">analog voltage inverter</a>, <a href="https://publications.waset.org/abstracts/search?q=capacitive%20load" title=" capacitive load"> capacitive load</a>, <a href="https://publications.waset.org/abstracts/search?q=gain%20control" title=" gain control"> gain control</a>, <a href="https://publications.waset.org/abstracts/search?q=dc-dc%20converter" title=" dc-dc converter"> dc-dc converter</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric" title=" piezoelectric"> piezoelectric</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20waveform" title=" voltage waveform"> voltage waveform</a> </p> <a href="https://publications.waset.org/abstracts/34752/analog-voltage-inverter-drive-for-capacitive-load-with-adaptive-gain-control" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34752.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">655</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9404</span> Comparative Study of Line Voltage Stability Indices for Voltage Collapse Forecasting in Power Transmission System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=H.%20H.%20Goh">H. H. Goh</a>, <a href="https://publications.waset.org/abstracts/search?q=Q.%20S.%20Chua"> Q. S. Chua</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20W.%20Lee"> S. W. Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20C.%20Kok"> B. C. Kok</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20C.%20Goh"> K. C. Goh</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20T.%20K.%20Teo"> K. T. K. Teo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> At present, the evaluation of voltage stability assessment experiences sizeable anxiety in the safe operation of power systems. This is due to the complications of a strain power system. With the snowballing of power demand by the consumers and also the restricted amount of power sources, therefore, the system has to perform at its maximum proficiency. Consequently, the noteworthy to discover the maximum ability boundary prior to voltage collapse should be undertaken. A preliminary warning can be perceived to evade the interruption of power system’s capacity. The effectiveness of line voltage stability indices (LVSI) is differentiated in this paper. The main purpose of the indices is used to predict the proximity of voltage instability of the electric power system. On the other hand, the indices are also able to decide the weakest load buses which are close to voltage collapse in the power system. The line stability indices are assessed using the IEEE 14 bus test system to validate its practicability. Results demonstrated that the implemented indices are practically relevant in predicting the manifestation of voltage collapse in the system. Therefore, essential actions can be taken to dodge the incident from arising. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=critical%20line" title="critical line">critical line</a>, <a href="https://publications.waset.org/abstracts/search?q=line%20outage" title=" line outage"> line outage</a>, <a href="https://publications.waset.org/abstracts/search?q=line%20voltage%20stability%20indices%20%28LVSI%29" title=" line voltage stability indices (LVSI)"> line voltage stability indices (LVSI)</a>, <a href="https://publications.waset.org/abstracts/search?q=maximum%20loadability" title=" maximum loadability"> maximum loadability</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20collapse" title=" voltage collapse"> voltage collapse</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20instability" title=" voltage instability"> voltage instability</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20stability%20analysis" title=" voltage stability analysis"> voltage stability analysis</a> </p> <a href="https://publications.waset.org/abstracts/15431/comparative-study-of-line-voltage-stability-indices-for-voltage-collapse-forecasting-in-power-transmission-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/15431.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">360</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9403</span> New Series Input Parallel Output LLC DC/DC Converter with the Input Voltage Balancing Capacitor for the Electric System of Electric Vehicles</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kang%20Hyun%20Yi">Kang Hyun Yi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a new parallel output LLC DC/DC converter for electric vehicle. The electric vehicle has two batteries. One is a high voltage battery for the powertrain of the vehicle and the other is a low voltage battery for the vehicle electric system. The low voltage is charged from the high voltage battery and the high voltage input and the high current output DC/DC converter is needed. Therefore, the new LLC converter with the input voltage compensation is proposed for the high voltage input and the low voltage output DC/DC converter. The proposed circuit has two LLC converters with the series input voltage from the battery for the powertrain and the parallel output low battery voltage for the vehicle electric system because the battery voltage for the powertrain and the electric power for the vehicle become high. Also, the input series voltage compensation capacitor is used for balancing the input current in the two LLC converters. The proposed converter has an equal electric stress of the semiconductor parts and the reactive components, high efficiency and good heat dissipation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electric%20vehicle" title="electric vehicle">electric vehicle</a>, <a href="https://publications.waset.org/abstracts/search?q=LLC%20DC%2FDC%20converter" title=" LLC DC/DC converter"> LLC DC/DC converter</a>, <a href="https://publications.waset.org/abstracts/search?q=input%20voltage%20balancing" title=" input voltage balancing"> input voltage balancing</a>, <a href="https://publications.waset.org/abstracts/search?q=parallel%20output" title=" parallel output"> parallel output</a> </p> <a href="https://publications.waset.org/abstracts/31896/new-series-input-parallel-output-llc-dcdc-converter-with-the-input-voltage-balancing-capacitor-for-the-electric-system-of-electric-vehicles" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/31896.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1052</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9402</span> The Analysis of Thermal Conductivity in Porcine Meat Due to Electricity by Finite Element Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Orose%20Rugchati">Orose Rugchati</a>, <a href="https://publications.waset.org/abstracts/search?q=Sarawut%20Wattanawongpitak"> Sarawut Wattanawongpitak</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This research studied the analysis of the thermal conductivity and heat transfer in porcine meat due to the electric current flowing between the electrode plates in parallel. Hot-boned pork sample was prepared in 2*1*1 cubic centimeter. The finite element method with ANSYS workbench program was applied to simulate this heat transfer problem. In the thermal simulation, the input thermoelectric energy was calculated from measured current that flowing through the pork and the input voltage from the dc voltage source. The comparison of heat transfer in pork according to two voltage sources: DC voltage 30 volts and dc pulsed voltage 60 volts (pulse width 50 milliseconds and 50 % duty cycle) were demonstrated. From the result, it shown that the thermal conductivity trends to be steady at temperature 40C and 60C around 1.39 W/mC and 2.65 W/mC for dc voltage source 30 volts and dc pulsed voltage 60 volts, respectively. For temperature increased to 50C at 5 minutes, the appearance color of porcine meat at the exposer point has become to fade. This technique could be used for predicting of thermal conductivity caused by some meat’s characteristics. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=thermal%20conductivity" title="thermal conductivity">thermal conductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=porcine%20meat" title=" porcine meat"> porcine meat</a>, <a href="https://publications.waset.org/abstracts/search?q=electricity" title=" electricity"> electricity</a>, <a href="https://publications.waset.org/abstracts/search?q=finite%20element%20method" title=" finite element method"> finite element method</a> </p> <a href="https://publications.waset.org/abstracts/98796/the-analysis-of-thermal-conductivity-in-porcine-meat-due-to-electricity-by-finite-element-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/98796.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">140</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9401</span> Voltage Stability Assessment and Enhancement Using STATCOM -A Case Study</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Puneet%20Chawla">Puneet Chawla</a>, <a href="https://publications.waset.org/abstracts/search?q=Balwinder%20Singh"> Balwinder Singh </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recently, increased attention has been devoted to the voltage instability phenomenon in power systems. Many techniques have been proposed in the literature for evaluating and predicting voltage stability using steady state analysis methods. In this paper, P-V and Q-V curves have been generated for a 57 bus Patiala Rajpura circle of India. The power-flow program is developed in MATLAB using Newton-Raphson method. Using Q-V curves, the weakest bus of the power system and the maximum reactive power change permissible on that bus is calculated. STATCOMs are placed on the weakest bus to improve the voltage and hence voltage stability and also the power transmission capability of the line. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=voltage%20stability" title="voltage stability">voltage stability</a>, <a href="https://publications.waset.org/abstracts/search?q=reactive%20power" title=" reactive power"> reactive power</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20flow" title=" power flow"> power flow</a>, <a href="https://publications.waset.org/abstracts/search?q=weakest%20bus" title=" weakest bus"> weakest bus</a>, <a href="https://publications.waset.org/abstracts/search?q=STATCOM" title=" STATCOM"> STATCOM</a> </p> <a href="https://publications.waset.org/abstracts/3097/voltage-stability-assessment-and-enhancement-using-statcom-a-case-study" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/3097.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">515</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9400</span> A CMOS-Integrated Hall Plate with High Sensitivity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jin%20Sup%20Kim">Jin Sup Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Min%20Seo"> Min Seo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> An improved cross-shaped hall plate with high sensitivity is described in this paper. Among different geometries that have been simulated and measured using Helmholtz coil. The paper describes the physical hall plate design and implementation in a 0.18-µm CMOS technology. In this paper, the biasing is a constant voltage mode. In the voltage mode, magnetic field is converted into an output voltage. The output voltage is typically in the order of micro- to millivolt and therefore, it must be amplified before being transmitted to the outside world. The study, design and performance optimization of hall plate has been carried out with the COMSOL Multiphysics. It is used to estimate the voltage distribution in the hall plate with and without magnetic field and to optimize the geometry. The simulation uses the nominal bias current of 1mA. The applied magnetic field is in the range from 0 mT to 20 mT. Measured results of the one structure over the 10 available samples show for the best sensitivity of 2.5 %/T at 20mT. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cross-shaped%20hall%20plate" title="cross-shaped hall plate">cross-shaped hall plate</a>, <a href="https://publications.waset.org/abstracts/search?q=sensitivity" title=" sensitivity"> sensitivity</a>, <a href="https://publications.waset.org/abstracts/search?q=CMOS%20technology" title=" CMOS technology"> CMOS technology</a>, <a href="https://publications.waset.org/abstracts/search?q=Helmholtz%20coil" title=" Helmholtz coil"> Helmholtz coil</a> </p> <a href="https://publications.waset.org/abstracts/79041/a-cmos-integrated-hall-plate-with-high-sensitivity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/79041.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">197</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9399</span> Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sanghoon%20Park">Sanghoon Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Jin%20Kim"> Ki-Jin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwang-Ho%20Ahn"> Kwang-Ho Ahn</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=voltage%20sense%20amplifier" title="voltage sense amplifier">voltage sense amplifier</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20transition" title=" voltage transition"> voltage transition</a>, <a href="https://publications.waset.org/abstracts/search?q=node%20stabilization" title=" node stabilization"> node stabilization</a>, <a href="https://publications.waset.org/abstracts/search?q=biasing%20circuits" title=" biasing circuits"> biasing circuits</a> </p> <a href="https://publications.waset.org/abstracts/6878/internal-node-stabilization-for-voltage-sense-amplifiers-in-multi-channel-systems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/6878.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">479</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9398</span> Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do">Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park"> Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae"> Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrostatic%20discharge%20%28ESD%29" title="electrostatic discharge (ESD)">electrostatic discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20voltage%20trigger%20silicon%20controlled%20rectifier%20%28LVTSCR%29" title=" low voltage trigger silicon controlled rectifier (LVTSCR)"> low voltage trigger silicon controlled rectifier (LVTSCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=MVTSCR" title=" MVTSCR"> MVTSCR</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/73702/low-trigger-voltage-silicon-controlled-rectifier-stacking-structure-with-high-holding-voltage-for-high-voltage-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73702.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">458</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9397</span> An Improved Cuckoo Search Algorithm for Voltage Stability Enhancement in Power Transmission Networks</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Reza%20Sirjani">Reza Sirjani</a>, <a href="https://publications.waset.org/abstracts/search?q=Nobosse%20Tafem%20Bolan"> Nobosse Tafem Bolan </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Many optimization techniques available in the literature have been developed in order to solve the problem of voltage stability enhancement in power systems. However, there are a number of drawbacks in the use of previous techniques aimed at determining the optimal location and size of reactive compensators in a network. In this paper, an Improved Cuckoo Search algorithm is applied as an appropriate optimization algorithm to determine the optimum location and size of a Static Var Compensator (SVC) in a transmission network. The main objectives are voltage stability improvement and total cost minimization. The results of the presented technique are then compared with other available optimization techniques. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cuckoo%20search%20algorithm" title="cuckoo search algorithm">cuckoo search algorithm</a>, <a href="https://publications.waset.org/abstracts/search?q=optimization" title=" optimization"> optimization</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20system" title=" power system"> power system</a>, <a href="https://publications.waset.org/abstracts/search?q=var%20compensators" title=" var compensators"> var compensators</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20stability" title=" voltage stability"> voltage stability</a> </p> <a href="https://publications.waset.org/abstracts/38354/an-improved-cuckoo-search-algorithm-for-voltage-stability-enhancement-in-power-transmission-networks" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/38354.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">552</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9396</span> Voltage and Current Control of Microgrid in Grid Connected and Islanded Modes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Megha%20Chavda">Megha Chavda</a>, <a href="https://publications.waset.org/abstracts/search?q=Parth%20Thummar"> Parth Thummar</a>, <a href="https://publications.waset.org/abstracts/search?q=Rahul%20Ghetia"> Rahul Ghetia</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents the voltage and current control of microgrid accompanied by the synchronization of microgrid with the main utility grid in both islanded and grid-connected modes. Distributed Energy Resources (DERs) satisfy the wide-spread power demand of consumer by behaving as a micro source for a low voltage (LV) grid or microgrid. Synchronization of the microgrid with the main utility grid is done using PLL and PWM gate pulse generation technique is used for the Voltage Source Converter. Potential Function method achieves the voltage and current control of this microgrid in both islanded and grid-connected modes. A low voltage grid consisting of three distributed generators (DG) is considered for the study and is simulated in time-domain using PSCAD/EMTDC software. The simulation results depict the appropriateness of voltage and current control of microgrid and synchronization of microgrid with the medium voltage (MV) grid. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=microgrid" title="microgrid">microgrid</a>, <a href="https://publications.waset.org/abstracts/search?q=distributed%20energy%20resources" title=" distributed energy resources"> distributed energy resources</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20and%20current%20control" title=" voltage and current control"> voltage and current control</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20source%20converter" title=" voltage source converter"> voltage source converter</a>, <a href="https://publications.waset.org/abstracts/search?q=pulse%20width%20modulation" title=" pulse width modulation"> pulse width modulation</a>, <a href="https://publications.waset.org/abstracts/search?q=phase%20locked%20loop" title=" phase locked loop"> phase locked loop</a> </p> <a href="https://publications.waset.org/abstracts/52368/voltage-and-current-control-of-microgrid-in-grid-connected-and-islanded-modes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/52368.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">414</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9395</span> Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sanghoon%20Park">Sanghoon Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Jin%20Kim"> Ki-Jin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwang-Ho%20Ahn"> Kwang-Ho Ahn</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=voltage%20sense%20amplifier" title="voltage sense amplifier">voltage sense amplifier</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-inputs" title=" multi-inputs"> multi-inputs</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20transition" title=" voltage transition"> voltage transition</a>, <a href="https://publications.waset.org/abstracts/search?q=node%20stabilization" title=" node stabilization"> node stabilization</a>, <a href="https://publications.waset.org/abstracts/search?q=biasing%20circuits" title=" biasing circuits"> biasing circuits</a> </p> <a href="https://publications.waset.org/abstracts/23974/stabilization-technique-for-multi-inputs-voltage-sense-amplifiers-in-node-sharing-converters" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/23974.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">565</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9394</span> Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/56482/analysis-of-stacked-scr-based-esd-protection-circuit-with-low-trigger-voltage-and-latch-up-immunity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56482.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">524</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9393</span> An Active Rectifier with Time-Domain Delay Compensation to Enhance the Power Conversion Efficiency</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shao-Ku%20Kao">Shao-Ku Kao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 &Omega; ~ 1500 &Omega; for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=wireless%20power%20transfer" title="wireless power transfer">wireless power transfer</a>, <a href="https://publications.waset.org/abstracts/search?q=active%20diode" title=" active diode"> active diode</a>, <a href="https://publications.waset.org/abstracts/search?q=delay%20compensation" title=" delay compensation"> delay compensation</a>, <a href="https://publications.waset.org/abstracts/search?q=time%20to%20voltage%20converter" title=" time to voltage converter"> time to voltage converter</a>, <a href="https://publications.waset.org/abstracts/search?q=PCE" title=" PCE"> PCE</a> </p> <a href="https://publications.waset.org/abstracts/99488/an-active-rectifier-with-time-domain-delay-compensation-to-enhance-the-power-conversion-efficiency" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/99488.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">282</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9392</span> Coordinated Voltage Control in a Radial Distribution System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shivarudraswamy">Shivarudraswamy</a>, <a href="https://publications.waset.org/abstracts/search?q=Anubhav%20Shrivastava"> Anubhav Shrivastava</a>, <a href="https://publications.waset.org/abstracts/search?q=Lakshya%20Bhat"> Lakshya Bhat</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Distributed generation has indeed become a major area of interest in recent years. Distributed Generation can address large number of loads in a power line and hence has better efficiency over the conventional methods. However there are certain drawbacks associated with it, increase in voltage being the major one. This paper addresses the voltage control at the buses for an IEEE 30 bus system by regulating reactive power. For carrying out the analysis, the suitable location for placing distributed generators (DG) is identified through load flow analysis and seeing where the voltage profile is dipping. MATLAB programming is used to regulate the voltage at all buses within +/-5% of the base value even after the introduction of DG’s. Three methods for regulation of voltage are discussed. A sensitivity based analysis is later carried out to determine the priority among the various methods listed in the paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=distributed%20generators" title="distributed generators">distributed generators</a>, <a href="https://publications.waset.org/abstracts/search?q=distributed%20system" title=" distributed system"> distributed system</a>, <a href="https://publications.waset.org/abstracts/search?q=reactive%20power" title=" reactive power"> reactive power</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20control" title=" voltage control"> voltage control</a> </p> <a href="https://publications.waset.org/abstracts/28710/coordinated-voltage-control-in-a-radial-distribution-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/28710.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">500</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9391</span> Numerical Investigation Including Mobility Model for the Performances of Piezoresistive Sensors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelaziz%20Beddiaf">Abdelaziz Beddiaf</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, we present an analysis based on the study of mobility which is a very important electrical parameter of a piezoresistor and which is directly bound to the piezoresistivity effect in piezoresistive pressure sensors. We determine how the temperature affects mobility when the electric potential is applied. For this, a theoretical approach based on mobility in a p-type Silicon piezoresistor with that of a finite difference model for self-heating is developed. So, the evolution of mobility has been established versus time for different doping levels and with temperature rise provoked by self-heating using a numerical model combined with that of mobility. Furthermore, it has been calculated for some geometrical parameters of the sensor, such as membrane side length and thickness. Also, it is computed as a function of bias voltage. It was observed that mobility is strongly affected by the temperature rise induced by the applied potential when the sensor is actuated for a prolonged time as a consequence of drifting in the output response of the sensor. Finally, this work makes it possible to predict their temperature behavior due to self-heating and to improve this effect by optimizing the geometric properties of the device and by reducing the voltage source applied to the bridge. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sensors" title="Sensors">Sensors</a>, <a href="https://publications.waset.org/abstracts/search?q=Piezoresistivity" title=" Piezoresistivity"> Piezoresistivity</a>, <a href="https://publications.waset.org/abstracts/search?q=Mobility" title=" Mobility"> Mobility</a>, <a href="https://publications.waset.org/abstracts/search?q=Bias%20voltage" title=" Bias voltage"> Bias voltage</a> </p> <a href="https://publications.waset.org/abstracts/159683/numerical-investigation-including-mobility-model-for-the-performances-of-piezoresistive-sensors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/159683.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">92</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9390</span> Electrochemical Studies of Si, Si-Ge- and Ge-Air Batteries</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=R.%20C.%20Sharma">R. C. Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Rishabh%20Bansal"> Rishabh Bansal</a>, <a href="https://publications.waset.org/abstracts/search?q=Prajwal%20Menon"> Prajwal Menon</a>, <a href="https://publications.waset.org/abstracts/search?q=Manoj%20K.%20Sharma"> Manoj K. Sharma</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Silicon-air battery is highly promising for electric vehicles due to its high theoretical energy density (8470 Whkg⁻¹) and its discharge products are non-toxic. For the first time, pure silicon and germanium powders are used as anode material. Nickel wire meshes embedded with charcoal and manganese dioxide powder as cathode and concentrated potassium hydroxide is used as electrolyte. Voltage-time curves have been presented in this study for pure silicon and germanium powder and 5% and 10% germanium with silicon powder. Silicon powder cell assembly gives a stable voltage of 0.88 V for ~20 minutes while Si-Ge provides cell voltage of 0.80-0.76 V for ~10-12 minutes, and pure germanium cell provides cell voltage 0.80-0.76 V for ~30 minutes. The cell voltage is higher for concentrated (10%) sodium hydroxide solution (1.08 V) and it is stable for ~40 minutes. A sharp decrease in cell voltage beyond 40 min may be due to rapid corrosion. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Silicon-air%20battery" title="Silicon-air battery">Silicon-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=Germanium-air%20battery" title=" Germanium-air battery"> Germanium-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage-time%20curve" title=" voltage-time curve"> voltage-time curve</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage" title=" open circuit voltage"> open circuit voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=Anodic%20corrosion" title=" Anodic corrosion"> Anodic corrosion</a> </p> <a href="https://publications.waset.org/abstracts/138312/electrochemical-studies-of-si-si-ge-and-ge-air-batteries" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/138312.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">238</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=applied%20voltage&amp;page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=applied%20voltage&amp;page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=applied%20voltage&amp;page=4">4</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=applied%20voltage&amp;page=5">5</a></li> <li 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