Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier

<!DOCTYPE html> <html lang="en" xml:lang="en"> <head> <meta charset="utf-8"> <meta name="viewport" content="width=device-width, initial-scale=1.0"> <title> Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier | U.Porto Journal of Engineering </title> <link rel="icon" href="https://journalengineering.fe.up.pt/public/journals/3/favicon_en_US.png"> <meta name="generator" content="Open Journal Systems 3.4.0.3"> <link rel="schema.DC" href="http://purl.org/dc/elements/1.1/" /> <meta name="DC.Creator.PersonalName" content="Rajesh Durgam"/> <meta name="DC.Creator.PersonalName" content="S. Tamil"/> <meta name="DC.Creator.PersonalName" content="Nikhil Raj"/> <meta name="DC.Date.created" scheme="ISO8601" content="2021-11-26"/> <meta name="DC.Date.dateSubmitted" scheme="ISO8601" content="2021-05-20"/> <meta name="DC.Date.issued" scheme="ISO8601" content="2021-11-26"/> <meta name="DC.Date.modified" scheme="ISO8601" content="2021-11-26"/> <meta name="DC.Description" xml:lang="en" content="In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input. Further for achieving high gain the modified self cascode structure is used at the output. Compared to conventional self cascode the modified self cascode structure used provides higher transconductance which helps in significant boosting of gain of the amplifier. The modification is achieved by employing quasi-floating gate transistor which helps in scaling of the threshold which as a result increases the drain-to-source voltage of linear mode transistor thus changing it to saturation. This change of mode boosts the effective transconductance of self cascode MOSFET. The proposed operational transconductance amplifier when compared to its conventional showed improvement in DC gain by 30dB and also the unity gain bandwidth increases by 6 fold. The MOS models used for amplifier design are of 0.18碌m CMOS technology at supply of 0.5V."/> <meta name="DC.Format" scheme="IMT" content="application/pdf"/> <meta name="DC.Identifier" content="2183-6493_007-004_0008"/> <meta name="DC.Identifier.pageNumber" content="103-110"/> <meta name="DC.Identifier.DOI" content="10.24840/2183-6493_007.004_0008"/> <meta name="DC.Identifier.URI" content="https://journalengineering.fe.up.pt/index.php/upjeng/article/view/2183-6493_007-004_0008"/> <meta name="DC.Language" scheme="ISO639-1" content="en"/> <meta name="DC.Rights" content="Copyright (c) 2021 Rajesh Durgam, S. Tamil, Nikhil Raj"/> <meta name="DC.Rights" content="https://creativecommons.org/licenses/by/4.0"/> <meta name="DC.Source" content="U.Porto Journal of Engineering"/> <meta name="DC.Source.ISSN" content="2183-6493"/> <meta name="DC.Source.Issue" content="4"/> <meta name="DC.Source.Volume" content="7"/> <meta name="DC.Source.URI" content="https://journalengineering.fe.up.pt/index.php/upjeng"/> <meta name="DC.Subject" xml:lang="en" content="Self Cascode"/> <meta name="DC.Subject" xml:lang="en" content="Quasi-floating Gate"/> <meta name="DC.Subject" xml:lang="en" content="Transconductance"/> <meta name="DC.Subject" xml:lang="en" content="Current Mirror"/> <meta name="DC.Subject" xml:lang="en" content="OTA"/> <meta name="DC.Subject" xml:lang="en" content="Gain"/> <meta name="DC.Subject" xml:lang="en" content="Bandwidth"/> <meta name="DC.Title" content="Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier"/> <meta name="DC.Type" content="Text.Serial.Journal"/> <meta name="DC.Type.articleType" content="Articles"/> <meta name="gs_meta_revision" content="1.1"/> <meta name="citation_journal_title" content="U.Porto Journal of Engineering"/> <meta name="citation_journal_abbrev" content="UPjeng"/> <meta name="citation_issn" content="2183-6493"/> <meta name="citation_author" content="Rajesh Durgam"/> <meta name="citation_author_institution" content="SRK University - Bhopal, India"/> <meta name="citation_author" content="S. Tamil"/> <meta name="citation_author_institution" content="SRK University - Bhopal, India"/> <meta name="citation_author" content="Nikhil Raj"/> <meta name="citation_author_institution" content="LNM Institute of Information Technology, India"/> <meta name="citation_title" content="Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier"/> <meta name="citation_language" content="en"/> <meta name="citation_date" content="2021/11/26"/> <meta name="citation_volume" content="7"/> <meta name="citation_issue" content="4"/> <meta name="citation_firstpage" content="103"/> <meta name="citation_lastpage" content="110"/> <meta name="citation_doi" content="10.24840/2183-6493_007.004_0008"/> <meta name="citation_abstract_html_url" content="https://journalengineering.fe.up.pt/index.php/upjeng/article/view/2183-6493_007-004_0008"/> <meta name="citation_abstract" xml:lang="en" content="In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input. Further for achieving high gain the modified self cascode structure is used at the output. Compared to conventional self cascode the modified self cascode structure used provides higher transconductance which helps in significant boosting of gain of the amplifier. The modification is achieved by employing quasi-floating gate transistor which helps in scaling of the threshold which as a result increases the drain-to-source voltage of linear mode transistor thus changing it to saturation. This change of mode boosts the effective transconductance of self cascode MOSFET. The proposed operational transconductance amplifier when compared to its conventional showed improvement in DC gain by 30dB and also the unity gain bandwidth increases by 6 fold. The MOS models used for amplifier design are of 0.18碌m CMOS technology at supply of 0.5V."/> <meta name="citation_keywords" xml:lang="en" content="Self Cascode"/> <meta name="citation_keywords" xml:lang="en" content="Quasi-floating Gate"/> <meta name="citation_keywords" xml:lang="en" content="Transconductance"/> <meta name="citation_keywords" xml:lang="en" content="Current Mirror"/> <meta name="citation_keywords" xml:lang="en" content="OTA"/> <meta name="citation_keywords" xml:lang="en" content="Gain"/> <meta name="citation_keywords" xml:lang="en" content="Bandwidth"/> <meta name="citation_pdf_url" content="https://journalengineering.fe.up.pt/index.php/upjeng/article/download/2183-6493_007-004_0008/576"/> <link rel="alternate" type="application/atom+xml" href="https://journalengineering.fe.up.pt/index.php/upjeng/gateway/plugin/APP%5Cplugins%5Cgeneric%5CwebFeed%5CWebFeedGatewayPlugin/atom"> <link rel="alternate" type="application/rdf+xml" href="https://journalengineering.fe.up.pt/index.php/upjeng/gateway/plugin/APP%5Cplugins%5Cgeneric%5CwebFeed%5CWebFeedGatewayPlugin/rss"> <link rel="alternate" type="application/rss+xml" href="https://journalengineering.fe.up.pt/index.php/upjeng/gateway/plugin/APP%5Cplugins%5Cgeneric%5CwebFeed%5CWebFeedGatewayPlugin/rss2"> <link rel="stylesheet" href="https://journalengineering.fe.up.pt/index.php/upjeng/$$$call$$$/page/page/css?name=bootstrap" type="text/css" /> </head> <body class="pkp_page_article pkp_op_view has_site_logo"> <div class="pkp_structure_page"> <nav id="accessibility-nav" class="sr-only" role="navigation" aria-label="Quick jump to page content"> <ul> <li><a href="#main-navigation">Main Navigation</a></li> <li><a href="#main-content">Main Content</a></li> <li><a href="#sidebar">Sidebar</a></li> </ul> </nav> <header class="navbar navbar-default" id="headerNavigationContainer" role="banner"> <div class="container-fluid"> <div class="row"> <nav aria-label="User Navigation"> <ul id="navigationUser" class="nav nav-pills tab-list pull-right"> <li class=" menu-item-1"> <a href="https://journalengineering.fe.up.pt/index.php/upjeng/user/register"> Register </a> </li> <li class=" menu-item-2"> <a href="https://journalengineering.fe.up.pt/index.php/upjeng/login"> Login </a> </li> </ul> </nav> </div> </div> <div class="container-fluid"> <div class="navbar-header"> <button type="button" class="navbar-toggle collapsed" data-toggle="collapse" data-target="#nav-menu" aria-expanded="false" aria-controls="nav-menu"> <span class="sr-only">Toggle navigation</span> <span class="icon-bar"></span> <span class="icon-bar"></span> <span class="icon-bar"></span> </button> <div class="site-name"> <a href=" https://journalengineering.fe.up.pt/index.php/upjeng/index " class="navbar-brand navbar-brand-logo"> <img src="https://journalengineering.fe.up.pt/public/journals/3/pageHeaderLogoImage_en_US.png" alt="U. 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Tamil</strong> <div class="article-author-affilitation"> SRK University - Bhopal, India </div> </div> <div class="author"> <strong>Nikhil Raj</strong> <div class="article-author-affilitation"> LNM Institute of Information Technology, India </div> <div class="orcid"> <a href="https://orcid.org/0000-0002-7544-9385" target="_blank"> https://orcid.org/0000-0002-7544-9385 </a> </div> </div> </div> <div class="article-summary" id="summary"> <h2>Abstract</h2> <div class="article-abstract"> <p>In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input. Further for achieving high gain the modified self cascode structure is used at the output. Compared to conventional self cascode the modified self cascode structure used provides higher transconductance which helps in significant boosting of gain of the amplifier. The modification is achieved by employing quasi-floating gate transistor which helps in scaling of the threshold which as a result increases the drain-to-source voltage of linear mode transistor thus changing it to saturation. This change of mode boosts the effective transconductance of self cascode MOSFET. The proposed operational transconductance amplifier when compared to its conventional showed improvement in DC gain by 30dB and also the unity gain bandwidth increases by 6 fold. The MOS models used for amplifier design are of 0.18碌m CMOS technology at supply of 0.5V.</p> </div> </div> <section class="item downloads_chart"> <h2 class="label"> Downloads </h2> <div class="value"> <canvas class="usageStatsGraph" data-object-type="Submission" data-object-id="936"></canvas> <div class="usageStatsUnavailable" data-object-type="Submission" data-object-id="936"> Download data is not yet available. </div> </div> </section> </section> <section class="article-more-details"> <h2 class="sr-only">Article Details</h2>   <div class="panel panel-default copyright"> <div class="panel-body"> <a rel="license" href="https://creativecommons.org/licenses/by/4.0/"><img alt="Creative Commons License" src="//i.creativecommons.org/l/by/4.0/88x31.png" /></a><p>This work is licensed under a <a rel="license" href="https://creativecommons.org/licenses/by/4.0/">Creative Commons Attribution 4.0 International License</a>.</p> <p>Authors who publish with this journal agree to the following 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Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier | U.Porto Journal of Engineering