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controlled oscillator</title> <meta name="description" content="Search results for: voltage controlled oscillator"> <meta name="keywords" content="voltage controlled oscillator"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="voltage controlled oscillator"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 3650</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: voltage controlled oscillator</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3650</span> Voltage Controlled Ring Oscillator for RF Applications in 0.18 碌m CMOS Technology</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mohammad%20Arif%20Sobhan%20Bhuiyan">Mohammad Arif Sobhan Bhuiyan</a>, <a href="https://publications.waset.org/abstracts/search?q=Zainal%20Abidin%20Nordin"> Zainal Abidin Nordin</a>, <a href="https://publications.waset.org/abstracts/search?q=Mamun%20Bin%20Ibne%20Reaz"> Mamun Bin Ibne Reaz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A compact and power efficient high performance Voltage Controlled Oscillator (VCO) is a must in analog and digital circuits especially in the communication system, but the best trade-off among the performance parameters is a challenge for researchers. In this paper, a design of a compact 3-stage differential voltage controlled ring oscillator (VCRO) with low phase noise, low power and higher tuning bandwidth is proposed in 0.18 碌m CMOS technology. The VCRO is designed with symmetric load and positive feedback techniques to achieve higher gain and minimum delay. The proposed VCRO can operate at tuning range of 3.9-5.0 GHz at 1.6 V supply voltage. The circuit consumes only 1.0757 mW of power and produces -129 dbc/Hz. The total active area of the proposed VCRO is only 11.74 x 37.73 碌m2. Such a VCO can be the best choice for compact and low-power RF applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CMOS" title="CMOS">CMOS</a>, <a href="https://publications.waset.org/abstracts/search?q=VCO" title=" VCO"> VCO</a>, <a href="https://publications.waset.org/abstracts/search?q=VCRO" title=" VCRO"> VCRO</a>, <a href="https://publications.waset.org/abstracts/search?q=oscillator" title=" oscillator"> oscillator</a> </p> <a href="https://publications.waset.org/abstracts/2797/voltage-controlled-ring-oscillator-for-rf-applications-in-018-m-cmos-technology" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/2797.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">476</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3649</span> A Low Phase Noise CMOS LC Oscillator with Tail Current-Shaping</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Amir%20Mahdavi">Amir Mahdavi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a circuit topology of voltage-controlled oscillators (VCO) which is suitable for ultra-low-phase noise operations is introduced. To do so, a new low phase noise cross-coupled oscillator by using the general topology of cross-coupled oscillator and adding a differential stage for tail current shaping is designed. In addition, a tail current shaping technique to improve phase noise in differential LC VCOs is presented. The tail current becomes large when the oscillator output voltage arrives at the maximum or minimum value and when the sensitivity of the output phase to the noise is the smallest. Also, the tail current becomes small when the phase noise sensitivity is large. The proposed circuit does not use extra power and extra noisy active devices. Furthermore, this topology occupies small area. Simulation results show the improvement in phase noise by 2.5dB under the same conditions and at the carrier frequency of 1 GHz for GSM applications. The power consumption of the proposed circuit is 2.44 mW and the figure of merit (FOM) with -192.2 dBc/Hz is achieved for the new oscillator. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=LC%20oscillator" title="LC oscillator">LC oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20phase%20noise" title=" low phase noise"> low phase noise</a>, <a href="https://publications.waset.org/abstracts/search?q=current%20shaping" title=" current shaping"> current shaping</a>, <a href="https://publications.waset.org/abstracts/search?q=diff%20mode" title=" diff mode"> diff mode</a> </p> <a href="https://publications.waset.org/abstracts/75354/a-low-phase-noise-cmos-lc-oscillator-with-tail-current-shaping" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/75354.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">600</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3648</span> Output Voltage Analysis of CMOS Colpitts Oscillator with Short Channel Device</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Maryam%20Ebrahimpour">Maryam Ebrahimpour</a>, <a href="https://publications.waset.org/abstracts/search?q=Amir%20Ebrahimi"> Amir Ebrahimi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents the steady-state amplitude analysis of MOS Colpitts oscillator with short channel device. The proposed method is based on a large signal analysis and the nonlinear differential equations that govern the oscillator circuit behaviour. Also, the short channel effects are considered in the proposed analysis and analytical equations for finding the steady-state oscillation amplitude are derived. The output voltage calculated from this analysis is in excellent agreement with simulations for a wide range of circuit parameters. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=colpitts%20oscillator" title="colpitts oscillator">colpitts oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=CMOS" title=" CMOS"> CMOS</a>, <a href="https://publications.waset.org/abstracts/search?q=electronics" title=" electronics"> electronics</a>, <a href="https://publications.waset.org/abstracts/search?q=circuits" title=" circuits"> circuits</a> </p> <a href="https://publications.waset.org/abstracts/8691/output-voltage-analysis-of-cmos-colpitts-oscillator-with-short-channel-device" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8691.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">351</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3647</span> Noise and Thermal Analyses of Memristor-Based Phase Locked Loop Integrated Circuit</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Naheem%20Olakunle%20Adesina">Naheem Olakunle Adesina</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The memristor is considered as one of the promising candidates for mamoelectronic engineering and applications. Owing to its high compatibility with CMOS, nanoscale size, and low power consumption, memristor has been employed in the design of commonly used circuits such as phase-locked loop (PLL). In this paper, we designed a memristor-based loop filter (LF) together with other components of PLL. Following this, we evaluated the noise-rejection feature of loop filter by comparing the noise levels of input and output signals of the filter. Our SPICE simulation results showed that memristor behaves like a linear resistor at high frequencies. The result also showed that loop filter blocks the high-frequency components from phase frequency detector so as to provide a stable control voltage to the voltage controlled oscillator (VCO). In addition, we examined the effects of temperature on the performance of the designed phase locked loop circuit. A critical temperature, where there is frequency drift of VCO as a result of variations in control voltage, is identified. In conclusion, the memristor is a suitable choice for nanoelectronic systems owing to a small area, low power consumption, dense nature, high switching speed, and endurance. The proposed memristor-based loop filter, together with other components of the phase locked loop, can be designed using memristive emulator and EDA tools in current CMOS technology and simulated. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fast%20Fourier%20Transform" title="Fast Fourier Transform">Fast Fourier Transform</a>, <a href="https://publications.waset.org/abstracts/search?q=hysteresis%20curve" title=" hysteresis curve"> hysteresis curve</a>, <a href="https://publications.waset.org/abstracts/search?q=loop%20filter" title=" loop filter"> loop filter</a>, <a href="https://publications.waset.org/abstracts/search?q=memristor" title=" memristor"> memristor</a>, <a href="https://publications.waset.org/abstracts/search?q=noise" title=" noise"> noise</a>, <a href="https://publications.waset.org/abstracts/search?q=phase%20locked%20loop" title=" phase locked loop"> phase locked loop</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20controlled%20oscillator" title=" voltage controlled oscillator"> voltage controlled oscillator</a> </p> <a href="https://publications.waset.org/abstracts/109251/noise-and-thermal-analyses-of-memristor-based-phase-locked-loop-integrated-circuit" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/109251.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">186</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3646</span> Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do">Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park"> Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae"> Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrostatic%20discharge%20%28ESD%29" title="electrostatic discharge (ESD)">electrostatic discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20voltage%20trigger%20silicon%20controlled%20rectifier%20%28LVTSCR%29" title=" low voltage trigger silicon controlled rectifier (LVTSCR)"> low voltage trigger silicon controlled rectifier (LVTSCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=MVTSCR" title=" MVTSCR"> MVTSCR</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/73702/low-trigger-voltage-silicon-controlled-rectifier-stacking-structure-with-high-holding-voltage-for-high-voltage-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73702.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">458</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3645</span> Analog Voltage Inverter Drive for Capacitive Load with Adaptive Gain Control</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sun-Ki%20Hong">Sun-Ki Hong</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Ho%20Cho"> Yong-Ho Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Seok%20Kim"> Ki-Seok Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae-Sam%20Kang"> Tae-Sam Kang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=analog%20voltage%20inverter" title="analog voltage inverter">analog voltage inverter</a>, <a href="https://publications.waset.org/abstracts/search?q=capacitive%20load" title=" capacitive load"> capacitive load</a>, <a href="https://publications.waset.org/abstracts/search?q=gain%20control" title=" gain control"> gain control</a>, <a href="https://publications.waset.org/abstracts/search?q=dc-dc%20converter" title=" dc-dc converter"> dc-dc converter</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric" title=" piezoelectric"> piezoelectric</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20waveform" title=" voltage waveform"> voltage waveform</a> </p> <a href="https://publications.waset.org/abstracts/34752/analog-voltage-inverter-drive-for-capacitive-load-with-adaptive-gain-control" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34752.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">655</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3644</span> An Approach For Evolving a Relaible Low Power Ultra Wide Band Transmitter with Capacitve Sensing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=N.Revathy">N.Revathy</a>, <a href="https://publications.waset.org/abstracts/search?q=C.Gomathi"> C.Gomathi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work aims for a tunable capacitor as a sensor which can vary the control voltage of a voltage control oscillator in a ultra wide band (UWB) transmitter. In this paper power consumption is concentrated. The reason for choosing a capacitive sensing is it give slow temperature drift, high sensitivity and robustness. Previous works report a resistive sensing in a voltage control oscillator (VCO) not aiming at power consumption. But this work aims for power consumption of a capacitive sensing in ultra wide band transmitter. The ultra wide band transmitter to be used is a direct modulation of pulses. The VCO which is the heart of pulse generator of UWB transmitter works on the principle of voltage to frequency conversion. The VCO has and odd number of inverter stages which works on the control voltage input this input is now from a variable capacitor and the buffer stages is reduced from the previous work to maintain the oscillating frequency. The VCO is also aimed to consume low power. Then the concentration in choosing a variable capacitor is aimed. A compact model of a capacitor with the transient characteristics is to be designed with a movable dielectric and multi metal membranes. Previous modeling of the capacitor transient characteristics is with a movable membrane and a fixed membrane. This work aims at a membrane with a wide tuning suitable for ultra wide band transmitter.This is used in this work because a capacitive in a ultra wide transmitter need to be tuned in such a way that all satisfies FCC regulations. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=capacitive%20sensing" title="capacitive sensing">capacitive sensing</a>, <a href="https://publications.waset.org/abstracts/search?q=ultra%20wide%20band%20transmitter" title=" ultra wide band transmitter"> ultra wide band transmitter</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20control%20oscillator" title=" voltage control oscillator"> voltage control oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=FCC%20regulation" title=" FCC regulation "> FCC regulation </a> </p> <a href="https://publications.waset.org/abstracts/15772/an-approach-for-evolving-a-relaible-low-power-ultra-wide-band-transmitter-with-capacitve-sensing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/15772.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">392</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3643</span> Current Starved Ring Oscillator Image Sensor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Devin%20Atkin">Devin Atkin</a>, <a href="https://publications.waset.org/abstracts/search?q=Orly%20Yadid-Pecht"> Orly Yadid-Pecht</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The continual demands for increasing resolution and dynamic range in CMOS image sensors have resulted in exponential increases in the amount of data that needs to be read out of an image sensor, and existing readouts cannot keep up with this demand. Interesting approaches such as sparse and burst readouts have been proposed and show promise, but at considerable trade-offs in other specifications. To this end, we have begun designing and evaluating various new readout topologies centered around an attempt to parallelize the sensor readout. In this paper, we have designed, simulated, and started testing a new light-controlled oscillator topology with dual column and row readouts. We expect the parallel readout structure to offer greater speed and alleviate the trade-off typical in this topology, where slow pixels present a major framerate bottleneck. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CMOS%20image%20sensors" title="CMOS image sensors">CMOS image sensors</a>, <a href="https://publications.waset.org/abstracts/search?q=high-speed%20capture" title=" high-speed capture"> high-speed capture</a>, <a href="https://publications.waset.org/abstracts/search?q=wide%20dynamic%20range" title=" wide dynamic range"> wide dynamic range</a>, <a href="https://publications.waset.org/abstracts/search?q=light%20controlled%20oscillator" title=" light controlled oscillator"> light controlled oscillator</a> </p> <a href="https://publications.waset.org/abstracts/165110/current-starved-ring-oscillator-image-sensor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/165110.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">87</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3642</span> A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-il%20Do">Kyoung-il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung-seok%20Lee"> Byung-seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-guk%20Chae"> Hee-guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-yun%20Seo%20Yong-seo%20Koo"> Jeong-yun Seo Yong-seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/89519/a-silicon-controlled-rectifier-based-esd-protection-circuit-with-high-holding-voltage-and-high-robustness-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/89519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">397</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3641</span> Kemmer Oscillator in Cosmic String Background</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=N.%20Messai">N. Messai</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Boumali"> A. Boumali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, we aim to solve the two dimensional Kemmer equation including Dirac oscillator interaction term, in the background space-time generated by a cosmic string which is submitted to an uniform magnetic field. Eigenfunctions and eigenvalues of our problem have been found and the influence of the cosmic string space-time on the energy spectrum has been analyzed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kemmer%20oscillator" title="Kemmer oscillator">Kemmer oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=cosmic%20string" title=" cosmic string"> cosmic string</a>, <a href="https://publications.waset.org/abstracts/search?q=Dirac%20oscillator" title=" Dirac oscillator"> Dirac oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=eigenfunctions" title=" eigenfunctions"> eigenfunctions</a> </p> <a href="https://publications.waset.org/abstracts/22318/kemmer-oscillator-in-cosmic-string-background" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22318.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">584</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3640</span> Computational Fluid Dynamic Investigation into the Relationship between Pressure and Velocity Distributions within a Microfluidic Feedback Oscillator</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zara%20L.%20Sheady">Zara L. Sheady</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Fluidic oscillators are being utilised in an increasing number of applications in a wide variety of areas; these include on-board vehicle cleaning systems, flow separation control on aircraft and in fluidic circuitry. With this increased use, there is a further understanding required for the mechanics of the fluidics of the fluidic oscillator and why they work in the manner that they do. ANSYS CFX has been utilized to visualise the pressure and velocity within a microfluidic feedback oscillator. The images demonstrate how the pressure vortices build within the oscillator at the points where the velocity is diverted from linear motion through the oscillator. With an enhanced understanding of the pressure and velocity distributions within a fluidic oscillator, it will enable users of microfluidics to more greatly tailor fluidic nozzles to their specification. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ANSYS%20CFX" title="ANSYS CFX">ANSYS CFX</a>, <a href="https://publications.waset.org/abstracts/search?q=control" title=" control"> control</a>, <a href="https://publications.waset.org/abstracts/search?q=fluidic%20oscillators" title=" fluidic oscillators"> fluidic oscillators</a>, <a href="https://publications.waset.org/abstracts/search?q=mechanics" title=" mechanics"> mechanics</a>, <a href="https://publications.waset.org/abstracts/search?q=pressure" title=" pressure"> pressure</a>, <a href="https://publications.waset.org/abstracts/search?q=relationship" title=" relationship"> relationship</a>, <a href="https://publications.waset.org/abstracts/search?q=velocity" title=" velocity"> velocity</a> </p> <a href="https://publications.waset.org/abstracts/86615/computational-fluid-dynamic-investigation-into-the-relationship-between-pressure-and-velocity-distributions-within-a-microfluidic-feedback-oscillator" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/86615.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">337</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3639</span> Periodically Forced Oscillator with Noisy Chaotic Dynamics </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Adedayo%20Oke%20Adelakun">Adedayo Oke Adelakun</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The chaotic dynamics of periodically forced oscillators with smooth potential has been extensively investigated via theoretical, numerical and experimental simulations. With the advent of the study of chaotic dynamics by means of method of multiple time scale analysis, Melnikov theory, bifurcation diagram, Poincare's map, bifurcation diagrams and Lyapunov exponents, it has become necessary to seek for a better understanding of nonlinear oscillator with noisy term. In this paper, we examine the influence of noise on complex dynamical behaviour of periodically forced F6 - Duffing oscillator for specific choice of noisy parameters. The inclusion of noisy term improves the dynamical behaviour of the oscillator which may have wider application in secure communication than smooth potential. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=hierarchical%20structure" title="hierarchical structure">hierarchical structure</a>, <a href="https://publications.waset.org/abstracts/search?q=periodically%20forced%20oscillator" title=" periodically forced oscillator"> periodically forced oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=noisy%20parameters" title=" noisy parameters"> noisy parameters</a>, <a href="https://publications.waset.org/abstracts/search?q=dynamical%20behaviour" title=" dynamical behaviour"> dynamical behaviour</a>, <a href="https://publications.waset.org/abstracts/search?q=F6%20-%20duffing%20oscillator" title=" F6 - duffing oscillator"> F6 - duffing oscillator</a> </p> <a href="https://publications.waset.org/abstracts/47494/periodically-forced-oscillator-with-noisy-chaotic-dynamics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/47494.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">325</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3638</span> A Nanoelectromechanical Tunable Oscillator Base on a High-Q Optical Cavity </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jianguo%20Huang">Jianguo Huang</a>, <a href="https://publications.waset.org/abstracts/search?q=Hong%20Cai"> Hong Cai</a>, <a href="https://publications.waset.org/abstracts/search?q=Bin%20Dong"> Bin Dong</a>, <a href="https://publications.waset.org/abstracts/search?q=Jifang%20Tao"> Jifang Tao</a>, <a href="https://publications.waset.org/abstracts/search?q=Aiqun%20Liu"> Aiqun Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=Dim-Lee%20Kwong"> Dim-Lee Kwong</a>, <a href="https://publications.waset.org/abstracts/search?q=Yuandong%20Gu"> Yuandong Gu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We developed a miniaturized tunable optomechanical oscillator based on the nanoelectromechanical systems (NEMS) technology, and its frequencies can be electrostatically tuned by as much as 10%. By taking both advantages of optical and electrical spring, the oscillator achieves a high tuning sensitivity without resorting to mechanical tension. In particular, the proposed high-Q optical cavity design greatly enhances the system sensitivity, making it extremely sensitive to the small motional signal. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nanoelectromechanical%20systems%20%28NEMS%29" title="nanoelectromechanical systems (NEMS)">nanoelectromechanical systems (NEMS)</a>, <a href="https://publications.waset.org/abstracts/search?q=nanotechnology" title=" nanotechnology"> nanotechnology</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20force" title=" optical force"> optical force</a>, <a href="https://publications.waset.org/abstracts/search?q=oscillator" title=" oscillator"> oscillator</a> </p> <a href="https://publications.waset.org/abstracts/37879/a-nanoelectromechanical-tunable-oscillator-base-on-a-high-q-optical-cavity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/37879.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">497</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3637</span> On-Chip Aging Sensor Circuit Based on Phase Locked Loop Circuit </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ararat%20Khachatryan">Ararat Khachatryan</a>, <a href="https://publications.waset.org/abstracts/search?q=Davit%20Mirzoyan"> Davit Mirzoyan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In sub micrometer technology, the aging phenomenon starts to have a significant impact on the reliability of integrated circuits by bringing performance degradation. For that reason, it is important to have a capability to evaluate the aging effects accurately. This paper presents an accurate aging measurement approach based on phase-locked loop (PLL) and voltage-controlled oscillator (VCO) circuit. The architecture is rejecting the circuit self-aging effect from the characteristics of PLL, which is generating the frequency without any aging phenomena affects. The aging monitor is implemented in low power 32 nm CMOS technology, and occupies a pretty small area. Aging simulation results show that the proposed aging measurement circuit improves accuracy by about 2.8% at high temperature and 19.6% at high voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=aging%20effect" title="aging effect">aging effect</a>, <a href="https://publications.waset.org/abstracts/search?q=HCI" title=" HCI"> HCI</a>, <a href="https://publications.waset.org/abstracts/search?q=NBTI" title=" NBTI"> NBTI</a>, <a href="https://publications.waset.org/abstracts/search?q=nanoscale" title=" nanoscale"> nanoscale</a> </p> <a href="https://publications.waset.org/abstracts/65068/on-chip-aging-sensor-circuit-based-on-phase-locked-loop-circuit" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/65068.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">359</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3636</span> CFD modelling of Microdrops Manipulation by Microfluidic Oscillator</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Tawfiq%20Chekifi">Tawfiq Chekifi</a>, <a href="https://publications.waset.org/abstracts/search?q=Brahim%20Dennai"> Brahim Dennai</a>, <a href="https://publications.waset.org/abstracts/search?q=Rachid%20Khelfaoui"> Rachid Khelfaoui</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Over the last few decades, modeling immiscible fluids such as oil and water have been a classical research topic. Droplet-based microfluidics presents a unique platform for mixing, reaction, separation, dispersion of drops, and numerous other functions. For this purpose, several devices were studied, as well as microfluidic oscillator. The latter was obtained from wall attachment microfluidic amplifiers using a feedback loop from the outputs to the control inputs, nevertheless this device have not well used for microdrops applications. In this paper, we suggest a numerical CFD study of a microfluidic oscillator with two different lengths of feedback loop. In order to produce simultaneous microdrops of gasoil on water, a typical geometry that includes double T-junction is connected to the fluidic oscillator. The generation of microdrops is computed by volume-of-fluid method (VOF). Flow oscillations of microdrops were triggered by the Coanda effect of jet flow. The aim of work is to obtain a high oscillation frequency in output of this passive device, the influence of hydrodynamics and physics parameters on the microdrops frequency in the output of our microsystem is also analyzed, The computational results show that, the length of feedback loop, applied pressure on T-junction and interfacial tension have a significant effect on the dispersion of microdrops and its oscillation frequency. Across the range of low Reynold number, the microdrops generation and its dynamics have been accurately controlled by adjusting applying pressure ratio of two phases. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=fluidic%20oscillator" title="fluidic oscillator">fluidic oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=microdrops%20manipulation" title=" microdrops manipulation"> microdrops manipulation</a>, <a href="https://publications.waset.org/abstracts/search?q=VOF%20%28volume%20of%20fluid%20method%29" title=" VOF (volume of fluid method)"> VOF (volume of fluid method)</a>, <a href="https://publications.waset.org/abstracts/search?q=microfluidic%20oscillator" title=" microfluidic oscillator"> microfluidic oscillator</a> </p> <a href="https://publications.waset.org/abstracts/20878/cfd-modelling-of-microdrops-manipulation-by-microfluidic-oscillator" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/20878.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">397</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3635</span> A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae">Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Bo-Bae%20Song"> Bo-Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/80537/a-study-on-esd-protection-circuit-applying-silicon-controlled-rectifier-based-stack-technology-with-high-holding-voltage" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80537.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">548</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3634</span> Numerical Study of Microdrops Manipulation by MicroFluidic Oscillator</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Tawfiq%20Chekifi">Tawfiq Chekifi</a>, <a href="https://publications.waset.org/abstracts/search?q=Brahim%20Dennai"> Brahim Dennai</a>, <a href="https://publications.waset.org/abstracts/search?q=Rachid%20Khelfaoui"> Rachid Khelfaoui</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Over the last few decades, modeling immiscible fluids such as oil and water have been a classical research topic. Droplet-based microfluidics presents a unique platform for mixing, reaction, separation, dispersion of drops and numerous other functions. for this purpose Several devices were studied, as well as microfluidic oscillator. The latter was obtained from wall attachment microfluidic amplifiers using a feedback loop from the outputs to the control inputs, nevertheless this device haven鈥檛 well used for microdrops applications. In this paper, we suggest a numerical CFD study of a microfluidic oscillator with two different lengths of feedback loop. In order to produce simultaneous microdrops of gasoil on water, a typical geometry that includes double T-junction is connected to the fluidic oscillator, The generation of microdrops is computed by volume-of-fluid method (VOF). Flow oscillations of microdrops were triggered by the Coanda effect of jet flow. The aim of work is to obtain a high oscillation frequency in output of this passive device, the influence of hydrodynamics and physics parameters on the microdrops frequency in the output of our microsystem is also analyzed, The computational results show that, the length of feedback loop, applied pressure on T-junction and interfacial tension have a significant effect on the dispersion of microdrops and its oscillation frequency. Across the range of low Reynold number, the microdrops generation and its dynamics have been accurately controlled by adjusting applying pressure ratio of two phases. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=fluidic%20oscillator" title="fluidic oscillator">fluidic oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=microdrops%20manipulation" title=" microdrops manipulation"> microdrops manipulation</a>, <a href="https://publications.waset.org/abstracts/search?q=volume%20of%20fluid%20method" title=" volume of fluid method"> volume of fluid method</a>, <a href="https://publications.waset.org/abstracts/search?q=microfluidic%20oscillator" title=" microfluidic oscillator"> microfluidic oscillator</a> </p> <a href="https://publications.waset.org/abstracts/19279/numerical-study-of-microdrops-manipulation-by-microfluidic-oscillator" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19279.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">489</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3633</span> Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo">Yong Seo Koo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jong%20Ho%20Nam"> Jong Ho Nam</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Nam%20Choi"> Yong Nam Choi</a>, <a href="https://publications.waset.org/abstracts/search?q=Dae%20Yeol%20Yoo"> Dae Yeol Yoo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung%20Woo%20Han"> Jung Woo Han</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electro-static%20discharge%20%28ESD%29" title="electro-static discharge (ESD)">electro-static discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=protection%20circuit" title=" protection circuit"> protection circuit</a> </p> <a href="https://publications.waset.org/abstracts/9524/analysis-of-scr-based-esd-protection-circuit-on-holding-voltage-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9524.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3632</span> SCR-Stacking Structure with High Holding Voltage for IO and Power Clamp</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hyun%20Young%20Kim">Hyun Young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Han%20Hee%20Cho">Han Hee Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Sang%20Woon%20Cho"> Sang Woon Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=stack" title=" stack"> stack</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a> </p> <a href="https://publications.waset.org/abstracts/30148/scr-stacking-structure-with-high-holding-voltage-for-io-and-power-clamp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30148.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">557</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3631</span> Design of a Phemt Buffer Amplifier in Mm-Wave Band around 60 GHz</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Maryam%20Abata">Maryam Abata</a>, <a href="https://publications.waset.org/abstracts/search?q=Moulhime%20El%20Bekkali"> Moulhime El Bekkali</a>, <a href="https://publications.waset.org/abstracts/search?q=Said%20Mazer"> Said Mazer</a>, <a href="https://publications.waset.org/abstracts/search?q=Catherine%20Algani"> Catherine Algani</a>, <a href="https://publications.waset.org/abstracts/search?q=Mahmoud%20Mehdi"> Mahmoud Mehdi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> One major problem of most electronic systems operating in the millimeter wave band is the signal generation with a high purity and a stable carrier frequency. This problem is overcome by using the combination of a signal with a low frequency local oscillator (LO) and several stages of frequency multipliers. The use of these frequency multipliers to create millimeter-wave signals is an attractive alternative to direct generation signal. Therefore, the isolation problem of the local oscillator from the other stages is always present, which leads to have various mechanisms that can disturb the oscillator performance, thus a buffer amplifier is often included in oscillator outputs. In this paper, we present the study and design of a buffer amplifier in the mm-wave band using a 0.15渭m pHEMT from UMS foundry. This amplifier will be used as a part of a frequency quadrupler at 60 GHz. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mm-wave%20band" title="Mm-wave band">Mm-wave band</a>, <a href="https://publications.waset.org/abstracts/search?q=local%20oscillator" title=" local oscillator"> local oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=frequency%20quadrupler" title=" frequency quadrupler"> frequency quadrupler</a>, <a href="https://publications.waset.org/abstracts/search?q=buffer%20amplifier" title=" buffer amplifier"> buffer amplifier</a> </p> <a href="https://publications.waset.org/abstracts/26079/design-of-a-phemt-buffer-amplifier-in-mm-wave-band-around-60-ghz" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/26079.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">545</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3630</span> Analysis of Injection-Lock in Oscillators versus Phase Variation of Injected Signal</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Yousefi">M. Yousefi</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20Nasirzadeh"> N. Nasirzadeh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, behavior of an oscillator under injection of another signal has been investigated. Also, variation of output signal amplitude versus injected signal phase variation, the effect of varying the amplitude of injected signal and quality factor of the oscillator has been investigated. The results show that the locking time depends on phase and the best locking time happens at 180-degrees phase. Also, the effect of injected lock has been discussed. Simulations show that the locking time decreases with signal injection to bulk. Locking time has been investigated versus various phase differences. The effect of phase and amplitude changes on locking time of a typical LC oscillator in 180 nm technology has been investigated. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=analysis" title="analysis">analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=oscillator" title=" oscillator"> oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=injection-lock%20oscillator" title=" injection-lock oscillator"> injection-lock oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=phase%20modulation" title=" phase modulation"> phase modulation</a> </p> <a href="https://publications.waset.org/abstracts/53354/analysis-of-injection-lock-in-oscillators-versus-phase-variation-of-injected-signal" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/53354.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">348</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3629</span> Approximate Solution to Non-Linear Schr枚dinger Equation with Harmonic Oscillator by Elzaki Decomposition Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Emad%20K.%20Jaradat">Emad K. Jaradat</a>, <a href="https://publications.waset.org/abstracts/search?q=Ala%E2%80%99a%20Al-Faqih"> Ala鈥檃 Al-Faqih</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Nonlinear Schrödinger equations are regularly experienced in numerous parts of science and designing. Varieties of analytical methods have been proposed for solving these equations. In this work, we construct an approximate solution for the nonlinear Schrodinger equations, with harmonic oscillator potential, by Elzaki Decomposition Method (EDM). To illustrate the effects of harmonic oscillator on the behavior wave function, nonlinear Schrodinger equation in one and two dimensions is provided. The results show that, it is more perfectly convenient and easy to apply the EDM in one- and two-dimensional Schrodinger equation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=non-linear%20Schrodinger%20equation" title="non-linear Schrodinger equation">non-linear Schrodinger equation</a>, <a href="https://publications.waset.org/abstracts/search?q=Elzaki%20decomposition%20method" title=" Elzaki decomposition method"> Elzaki decomposition method</a>, <a href="https://publications.waset.org/abstracts/search?q=harmonic%20oscillator" title=" harmonic oscillator"> harmonic oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=one%20and%20two-dimensional%20Schrodinger%20equation" title=" one and two-dimensional Schrodinger equation"> one and two-dimensional Schrodinger equation</a> </p> <a href="https://publications.waset.org/abstracts/102537/approximate-solution-to-non-linear-schrodinger-equation-with-harmonic-oscillator-by-elzaki-decomposition-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/102537.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">187</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3628</span> Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/56482/analysis-of-stacked-scr-based-esd-protection-circuit-with-low-trigger-voltage-and-latch-up-immunity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56482.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">524</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3627</span> Symbolic Analysis of Power Spectrum of CMOS Cross Couple Oscillator </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kittipong%20Tripetch">Kittipong Tripetch</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper proposes for the first time symbolic formula of the power spectrum of cross couple oscillator and its modified circuit. Many principle existed to derived power spectrum in microwave textbook such as impedance, admittance parameters, ABCD, H parameters, etc. It can be compared by graph of power spectrum which methodology is the best from the point of view of practical measurement setup such as condition of impedance parameter which used superposition of current to derived (its current injection of the other port of the circuit is zero, which is impossible in reality). Four Graphs of impedance parameters of cross couple oscillator is proposed. After that four graphs of Scattering parameters of cross couple oscillator will be shown. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=optimization" title="optimization">optimization</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20spectrum" title=" power spectrum"> power spectrum</a>, <a href="https://publications.waset.org/abstracts/search?q=impedance%20parameters" title=" impedance parameters"> impedance parameters</a>, <a href="https://publications.waset.org/abstracts/search?q=scattering%20parameter" title=" scattering parameter"> scattering parameter</a> </p> <a href="https://publications.waset.org/abstracts/36614/symbolic-analysis-of-power-spectrum-of-cmos-cross-couple-oscillator" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/36614.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">466</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3626</span> Generalized Dirac oscillators Associated to Non-Hermitian Quantum Mechanical Systems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Debjit%20Dutta">Debjit Dutta</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20Roy"> P. Roy</a>, <a href="https://publications.waset.org/abstracts/search?q=O.%20Panella"> O. Panella</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In recent years, non Hermitian interaction in non relativistic as well as relativistic quantum mechanics have been examined from various aspect. We can observe interesting fact that for such systems a class of potentials, namely the PT symmetric and 畏-pseudo Hermitian admit real eigenvalues despite being non Hermitian and analogues of those system have been experimentally verified. Point to be noted that relativistic non Hermitian (PT symmetric) interactions can be realized in optical structures and also there exists photonic realization of the (1 + 1) dimensional Dirac oscillator. We have thoroughly studied generalized Dirac oscillators with non Hermitian interactions in (1 + 1) dimensions. To be more specific, we have examined 畏 pseudo Hermitian interactions within the framework of generalized Dirac oscillator in (1 + 1) dimensions. In particular, we have obtained a class of interactions which are 畏-pseudo Hermitian and the metric operator 畏 could have been also found explicitly. It is possible to have exact solutions of the generalized Dirac oscillator for some choices of the interactions. Subsequently we have employed the mapping between the generalized Dirac oscillator and the Jaynes Cummings (JC) model by spin flip to obtain a class of exactly solvable non Hermitian JC as well as anti Jaynes Cummings (AJC) type models. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Dirac%20oscillator" title="Dirac oscillator">Dirac oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=non-Hermitian%20quantum%20system" title=" non-Hermitian quantum system"> non-Hermitian quantum system</a>, <a href="https://publications.waset.org/abstracts/search?q=Hermitian" title=" Hermitian"> Hermitian</a>, <a href="https://publications.waset.org/abstracts/search?q=relativistic" title=" relativistic "> relativistic </a> </p> <a href="https://publications.waset.org/abstracts/4071/generalized-dirac-oscillators-associated-to-non-hermitian-quantum-mechanical-systems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/4071.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">459</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3625</span> Wireless Integrated Switched Oscillator Impulse Generator with Application in Wireless Passive Electric Field Sensors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=S.%20Mohammadzamani">S. Mohammadzamani</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Kordi"> B. Kordi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Wireless electric field sensors are in high demand in the number of applications that requires measuring electric field such as investigations of high power systems and testing the high voltage apparatus. Passive wireless electric field sensors are most desired since they do not require a source of power and are interrogated wirelessly. A passive wireless electric field sensor has been designed and fabricated by our research group. In the wireless interrogation system of the sensor, a wireless radio frequency impulse generator needs to be employed. A compact wireless impulse generator composed of an integrated resonant switched oscillator (SWO) and a pulse-radiating antenna has been designed and fabricated in this research. The fundamental of Switched Oscillators was introduced by C.E.Baum. A Switched Oscillator consists of a low impedance transmission line charged by a DC source, through large impedance at desired frequencies and terminated to a high impedance antenna at one end and a fast closing switch at the other end. Once the line is charged, the switch will close and short-circuit the transmission line. Therefore, a fast transient wave will be generated and travels along the transmission line. Because of the mismatch between the antenna and the transmission line, only a part of fast transient wave will be radiated, and a portion of the fast-transient wave will reflect back. At the other end of the transmission line, there is a closed switch. Consequently, a second reflection with a reversed sign will propagate towards the antenna and the wave continues back and forth. hence, at the terminal of the antenna, there will be a series of positive and negative pulses with descending amplitude. In this research a single ended quarter wavelength Switched Oscillator has been designed and simulated at 800MHz. The simulation results show that the designed Switched Oscillator generates pulses with decreasing amplitude at the frequency of 800MHz with the maximum amplitude of 10V and bandwidth of about 10MHz at the antenna end. The switched oscillator has been fabricated using a 6cm long coaxial cable transmission line which is charged by a DC source and an 8cm monopole antenna as the pulse radiating antenna. A 90V gas discharge switch has been employed as the fast closing switch. The Switched oscillator sends a series of pulses with decreasing amplitude at the frequency of 790MHz with the maximum amplitude of 0.3V in the distance of 30 cm. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electric%20field%20measurement" title="electric field measurement">electric field measurement</a>, <a href="https://publications.waset.org/abstracts/search?q=impulse%20radiating%20antenna" title=" impulse radiating antenna"> impulse radiating antenna</a>, <a href="https://publications.waset.org/abstracts/search?q=switched%20oscillator" title=" switched oscillator"> switched oscillator</a>, <a href="https://publications.waset.org/abstracts/search?q=wireless%20impulse%20generator" title=" wireless impulse generator"> wireless impulse generator</a> </p> <a href="https://publications.waset.org/abstracts/105070/wireless-integrated-switched-oscillator-impulse-generator-with-application-in-wireless-passive-electric-field-sensors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/105070.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">181</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3624</span> Energy Management System Based on Voltage Fluctuations Minimization for Droop-Controlled Islanded Microgrid</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zahra%20Majd">Zahra Majd</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohsen%20Kalantar"> Mohsen Kalantar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Power management and voltage regulation is one of the most important issues in microgrid (MG) control and scheduling. This paper proposes a multiobjective scheduling formulation that consists of active power costs, voltage fluctuations summation, and technical constraints of MG. Furthermore, load flow and reserve constraints are considered to achieve proper voltage regulation. A modified Jacobian matrix is presented for calculating voltage variations and Mont Carlo simulation is used for generating and reducing scenarios. To convert the problem to a mixed integer linear program, a linearization procedure for nonlinear equations is presented. The proposed model is applied to a typical low-voltage MG and two different cases are investigated. The results show the effectiveness of the proposed model. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=microgrid" title="microgrid">microgrid</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20management%20system" title=" energy management system"> energy management system</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20fluctuations" title=" voltage fluctuations"> voltage fluctuations</a>, <a href="https://publications.waset.org/abstracts/search?q=modified%20Jacobian%20matrix" title=" modified Jacobian matrix"> modified Jacobian matrix</a> </p> <a href="https://publications.waset.org/abstracts/168897/energy-management-system-based-on-voltage-fluctuations-minimization-for-droop-controlled-islanded-microgrid" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/168897.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">91</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3623</span> Gate Voltage Controlled Humidity Sensing Using MOSFET of VO2 Particles</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20A.%20Akande">A. A. Akande</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20P.%20Dhonge"> B. P. Dhonge</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20W.%20Mwakikunga"> B. W. Mwakikunga</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20G.%20J.%20Machatine"> A. G. J. Machatine</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH<sub>4</sub>VO<sub>3</sub> precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO<sub>2</sub> (B) with V<sub>2</sub>O<sub>5 </sub>and an amorphous phase. The BET surface area is found to be 67.67 m<sup>2</sup>/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO<sub>2</sub> sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO<sub>2</sub> sensors which normally show response and recovery times of the order of 5 minutes (300 s). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=VO2" title="VO2">VO2</a>, <a href="https://publications.waset.org/abstracts/search?q=VO2%28B%29" title=" VO2(B)"> VO2(B)</a>, <a href="https://publications.waset.org/abstracts/search?q=MOSFET" title=" MOSFET"> MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=gate%20voltage" title=" gate voltage"> gate voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=humidity%20sensor" title=" humidity sensor"> humidity sensor</a> </p> <a href="https://publications.waset.org/abstracts/60921/gate-voltage-controlled-humidity-sensing-using-mosfet-of-vo2-particles" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/60921.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">322</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3622</span> Control Algorithm Design of Single-Phase Inverter For ZnO Breakdown Characteristics Tests</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kashif%20Habib">Kashif Habib</a>, <a href="https://publications.waset.org/abstracts/search?q=Zeeshan%20Ayyub"> Zeeshan Ayyub</a> </p> <p class="card-text"><strong>Abstract:</strong></p> ZnO voltage dependent resistor was widely used as components of the electrical system for over-voltage protection. It has a wide application prospect in superconducting energy-removal, generator de-excitation, overvoltage protection of electrical & electronics equipment. At present, the research for the application of ZnO voltage dependent resistor stop, it uses just in the field of its nonlinear voltage current characteristic and overvoltage protection areas. There is no further study over the over-voltage breakdown characteristics, such as the combustion phenomena and the measure of the voltage/current when it breakdown, and the affect to its surrounding equipment. It is also a blind spot in its application. So, when we do the feature test of ZnO voltage dependent resistor, we need to design a reasonable test power supply, making the terminal voltage keep for sine wave, simulating the real use of PF voltage in power supply conditions. We put forward the solutions of using inverter to generate a controllable power. The paper mainly focuses on the breakdown characteristic test power supply of nonlinear ZnO voltage dependent resistor. According to the current mature switching power supply technology, we proposed power control system using the inverter as the core. The power mainly realize the sin-voltage output on the condition of three-phase PF-AC input, and 3 control modes (RMS, Peak, Average) of the current output. We choose TMS320F2812M as the control part of the hardware platform. It is used to convert the power from three-phase to a controlled single-phase sin-voltage through a rectifier, filter, and inverter. Design controller produce SPWM, to get the controlled voltage source via appropriate multi-loop control strategy, while execute data acquisition and display, system protection, start logic control, etc. The TMS320F2812M is able to complete the multi-loop control quickly and can be a good completion of the inverter output control. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ZnO" title="ZnO">ZnO</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-loop%20control" title=" multi-loop control"> multi-loop control</a>, <a href="https://publications.waset.org/abstracts/search?q=SPWM" title=" SPWM"> SPWM</a>, <a href="https://publications.waset.org/abstracts/search?q=non-linear%20load" title=" non-linear load"> non-linear load</a> </p> <a href="https://publications.waset.org/abstracts/1333/control-algorithm-design-of-single-phase-inverter-for-zno-breakdown-characteristics-tests" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/1333.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">325</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3621</span> Modeling SET Effect on Charge Pump Phase Locked Loop</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Varsha%20Prasad">Varsha Prasad</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Sandya"> S. Sandya</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Cosmic Ray effects in microelectronics such as single event effect (SET) and total dose ionization (TID) have been of major concern in space electronics since 1970. Advanced CMOS technologies have demonstrated reduced sensitivity to TID effect. However, charge pump Phase Locked Loop is very much vulnerable to single event transient effect. This paper presents an SET analysis model, where the SET is modeled as a double exponential pulse. The time domain analysis reveals that the settling time of the voltage controlled oscillator (VCO) depends on the SET pulse strength, setting the time constant and the damping factor. The analysis of the proposed SET analysis model is confirmed by the simulation results. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=charge%20pump" title="charge pump">charge pump</a>, <a href="https://publications.waset.org/abstracts/search?q=phase%20locked%20loop" title=" phase locked loop"> phase locked loop</a>, <a href="https://publications.waset.org/abstracts/search?q=SET" title=" SET"> SET</a>, <a href="https://publications.waset.org/abstracts/search?q=VCO" title=" VCO"> VCO</a> </p> <a href="https://publications.waset.org/abstracts/10919/modeling-set-effect-on-charge-pump-phase-locked-loop" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/10919.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">433</span> </span> </div> </div> <ul class="pagination"> <li 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