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<p>近日，第十届国际第三代半导体论坛&第二十一届中国国际半导体照明论坛（IFWS&SSLCHINA2024）在苏州召开。 论坛期间，国家第三代半导体技术创新中心（苏州）、北方华创微电子装备有限公司、纳维朗科技（深圳）有限公司、苏州思体尔软件科技有限公司、中微半导体设备(上海)股份有限公司、浙江大学杭州国际科创中心电源管理技术创新联盟协办支持的“功率模块与电源技术应用峰会”上，天津大学教授薛凌霄、小鹏汽车功率系统总监陈皓、瑞萨半导体宽禁带半导体高级总监严启南、易能时代科技有限公司董事长兼CEO苏昕、纳微半导体应用总监李宾、长城电源技术有限公司深圳研发中心副总经理蔡磊、浙江大学副研究员闫海东、派恩杰半导体(浙江)有限公司应用主任工程师雷洋等专家们带来精彩报告，共同探讨功率模块与电源技术应用的最新进展。浙江大学教授、浙江大学杭州国际科创中心电源管理技术创新联盟理事长吴新科，厦门大学讲座教授、全球能源互联网研究院原院长邱宇峰共同主持了本届峰会。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/26/152712561.jpg" alt="吴新科主持" width="668" height="445" /></p> <p style="text-align: center;">吴新科</p> <p style="text-align: center;">浙江大学教授、浙江大学杭州国际科创中心电源管理技术创新联盟理事长</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/26/152733921.jpg" alt="邱宇峰" width="668" height="445" /></p> <p style="text-align: center;">邱宇峰</p> <p style="text-align: center;">厦门大学讲座教授、全球能源互联网研究院原院长</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202411/26/151804391.jpg" alt="薛凌霄" /></p> <p align="center">薛凌霄</p> <p align="center">天津大学教授</p> <p>天津大学教授薛凌霄带来了“氮化镓器件在多输出电源中的应用”的主题报告，介绍了现有多端口充电器存在的问题，拟议的基于多路复用的解决方案，用QR控制器实现多路复用等内容，报告显示，两级多输出转换器不可扩展，提出了一种时分复用反激电路，演示了使用商用控制器的实现。报告指出，在满载范围内运行，具有卓越的轻载效率和EMI。</p> <p style="text-align: center;"><b> <img src="http://www.casmita.com/file/upload/202411/26/151821831.jpg" alt="陈皓" /></b></p> <p align="center">陈皓</p> <p align="center">小鹏汽车功率系统总监</p> <p>小鹏汽车功率系统总监陈皓带来了“塑封碳化硅模块在800V电驱系统的应用”的主题报告，结合整车应用需求，分享了SiC塑封模块关键技术、SiC应用挑战、整车应用实绩等内容。报告指出，SiC应用挑战涉及带着杂散参数、芯片并联、EMC、轴电流等。其中，EMC的挑战涉及碳化硅高开关速度、高电压，增大高频共模噪声；系统耦合干扰，兼容性设计难度高；充电功能复用，EMC滤波挑战增大；滤波设计迭代，周期长、代价高等。轴电流的挑战涉及电控、电驱复杂系统耦合；电机轴承、减速器多电流环路共存；电机杂散参数一致性、不同工况油膜形成状态等多因素耦合等。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202411/26/151923381.jpg" alt="严启南" /></p> <p align="center">严启南</p> <p align="center">瑞萨半导体宽禁带半导体高级总监</p> <p>瑞萨半导体宽禁带半导体高级总监严启南带来了“氮化镓HEMT技术和产品路线图”的主题报告，涉及单片GaN双向、GaN FQS原型、1200V技术等内容。报告显示，蓝宝石上的GaN技术实现了低成本1200V GaN，1200V GaN的性能优于SiC MOSFET等。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/26/152018731.jpg" alt="苏昕" /><span><br /> </span><b>苏昕</b></p> <p align="center">易能时代科技有限公司董事长兼CEO</p> <p>充电模块是汽车充电设备中最重要的核心部件，占充电桩成本50%。易能时代科技有限公司董事长兼CEO苏昕带来了“电转换电路与第三代半导体的协同发展”的主题报告，分享传统电路中应用第三代半导体的思路，重新设计电路发挥第三代半导体的长处、降低第三代半导体的成本，解决大功率的痛苦。涉及EN5单极拓扑技术、EN5拓扑电路等。</p> <p style="text-align: center;"><b> <img src="http://www.casmita.com/file/upload/202411/26/152034671.jpg" alt="李宾" width="668" height="445" /></b></p> <p align="center">李宾</p> <p align="center">纳微半导体应用总监</p> <p>纳微半导体应用总监李宾带来了“氮化镓与碳化硅驱动AI与数据中心的电源创新”的主题报告。数据中心和人工智能需要高效、高功率密度的电源，报告显示，3.2 kW CrM图腾柱PFC，峰值效率达到99.3%。构建了尺寸为90 x 30.5 x 11mm的1.5 kW 12V LLC模块原型，在半负载时实现了97.5%的峰值效率。1.6kW 54V LLC模块原型采用正在申请专利的磁集成技术，在半负载时峰值效率超过97.8%。</p> <p style="text-align: center;"><b> <img src="http://www.casmita.com/file/upload/202411/26/152053241.jpg" alt="闫海东" /></b></p> <p align="center">闫海东</p> <p align="center">浙江大学副研究员</p> <p>浙江大学副研究员闫海东带来了“基于低温烧结技术的高性能SiC模块封装方法”的主题报告，下一代低温烧结技术、N2-HCOOH中的低温铜烧结、N2-HCOOH中的无压铜烧结行为、无压铜烧结的热性能、大面积烧结AMB基板至散热器、1200-600A SiC模块的热性能验证等内容。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202411/26/152125301.jpg" alt="雷洋" /></p> <p align="center">雷洋</p> <p align="center">派恩杰半导体(浙江)有限公司应用主任工程师</p> <p>碳化硅（SiC）MOSFET由于其优越的效率、高温耐受性以及相比传统硅器件更快的开关速度，已经成为现代电力电子技术中的关键技术。然而，影响其广泛应用的一个重要挑战是参数漂移，这会对其长期稳定性和性能产生影响。派恩杰半导体(浙江)有限公司应用主任工程师雷洋做了“基于环流系统的碳化硅功率器件可靠性研究”的主题报告。报告指出，环流测试系统可以同时进行多个模块的老化实验，通过该实验可以监测被测SiC MOSFET的参数漂移情况。短期实验结果表明，在壳温155℃左右运行时，SiC MOSFET未观察到明显的参数漂移。该测试也可以扩展至不同应力条件下的加速老化实验对比。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202411/26/152147501.jpg" alt="蔡磊" /></p> <p align="center">蔡磊</p> <p align="center">长城电源技术有限公司深圳研发中心副总经理</p> <p align="center">《基于第三代半导体器件的大功率AI 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