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Aydil is the Alstadt Lord Mark Chair and Professor of Chemical and Biomolecular Engineering at New York University (NYU) Tandon School of Engineering (2018-present). He was the Ronald L. and Janet A. Christenson Chair in Renewable Energy in the Department of Chemical Engineering and Materials Science at the University of Minnesota (2005-2018). Prior to Minnesota he was a postdoctoral member of Technical Staff at Bell Labs until 1993 and a Professor of Chemical Engineering at the University of California Santa Barbara until 2005. He received his B.S. degrees in chemical engineering and in materials science, both from U. C. Berkeley in 1986. He received his Ph.D. degree in chemical engineering in 1991 from the University of Houston. His research interests range from plasma science and technology and thin films to nanomaterials and photovoltaics. A major focus is improving the efficiency of solar cells and lowering the cost of electricity production from sunlight. He has published over 200 articles and holds 7 patents. He is the Editor-in-Chief of the Journal of Vacuum Science and Technology.","image":"https://0.academia-photos.com/32540595/9751655/10863433/s200_eray.aydil.jpg","thumbnailUrl":"https://0.academia-photos.com/32540595/9751655/10863433/s65_eray.aydil.jpg","primaryImageOfPage":{"@type":"ImageObject","url":"https://0.academia-photos.com/32540595/9751655/10863433/s200_eray.aydil.jpg","width":200},"sameAs":[],"relatedLink":"https://www.academia.edu/36187869/Infrared_detection_of_hydrogen_generated_free_carriers_in_polycrystalline_ZnO_thin_films"}</script><link rel="stylesheet" href="//a.academia-assets.com/assets/design_system/heading-95367dc03b794f6737f30123738a886cf53b7a65cdef98a922a98591d60063e3.css" media="all" /><link rel="stylesheet" href="//a.academia-assets.com/assets/design_system/button-8c9ae4b5c8a2531640c354d92a1f3579c8ff103277ef74913e34c8a76d4e6c00.css" media="all" /><link rel="stylesheet" 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Aydil is the Alstadt Lord Mark Chair and Professor of Chemical and Biomolecular Engineering at New York University (NYU) Tandon School of Engineering (2018-present). He was the Ronald L. and Janet A. Christenson Chair in Renewable Energy in the Department of Chemical Engineering and Materials Science at the University of Minnesota (2005-2018). Prior to Minnesota he was a postdoctoral member of Technical Staff at Bell Labs until 1993 and a Professor of Chemical Engineering at the University of California Santa Barbara until 2005. He received his B.S. degrees in chemical engineering and in materials science, both from U. C. Berkeley in 1986. He received his Ph.D. degree in chemical engineering in 1991 from the University of Houston. His research interests range from plasma science and technology and thin films to nanomaterials and photovoltaics. A major focus is improving the efficiency of solar cells and lowering the cost of electricity production from sunlight. He has published over 200 articles and holds 7 patents. He is the Editor-in-Chief of the Journal of Vacuum Science and Technology.<br /><span class="u-fw700">Phone: </span>646 997 3705<br /><b>Address: </b>New York University<br />Tandon School of Engineering<br />Chemical and Biomolecular Engineering Department<br />6 Metrotech Center<br />Brooklyn, NY 11201<br /><div class="js-profile-less-about u-linkUnstyled u-tcGrayDarker u-textDecorationUnderline u-displayNone">less</div></div></div><div class="suggested-academics-container"><div class="suggested-academics--header"><h3 class="ds2-5-heading-sans-serif-xs">Related Authors</h3></div><ul class="suggested-user-card-list" data-nosnippet="true"><div class="suggested-user-card"><div class="suggested-user-card__avatar social-profile-avatar-container"><a data-nosnippet="" href="https://independent.academia.edu/AcaPipit"><img class="profile-avatar u-positionAbsolute" alt="Aca Pipit related author profile picture" border="0" src="//a.academia-assets.com/images/s200_no_pic.png" /></a></div><div 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class="right-panel-container"><div class="user-content-wrapper"><div class="uploads-container" id="social-redesign-work-container"><div class="upload-header"><h2 class="ds2-5-heading-sans-serif-xs">Uploads</h2></div><div class="documents-container backbone-social-profile-documents" style="width: 100%;"><div class="u-taCenter"></div><div class="profile--tab_content_container js-tab-pane tab-pane active" id="all"><div class="profile--tab_heading_container js-section-heading" data-section="Papers" id="Papers"><h3 class="profile--tab_heading_container">Papers by Eray Aydil</h3></div><div class="js-work-strip profile--work_container" data-work-id="36187869"><div class="profile--work_thumbnail hidden-xs"><a class="js-work-strip-work-link" data-click-track="profile-work-strip-thumbnail" href="https://www.academia.edu/36187869/Infrared_detection_of_hydrogen_generated_free_carriers_in_polycrystalline_ZnO_thin_films"><img alt="Research paper thumbnail of Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films" class="work-thumbnail" src="https://attachments.academia-assets.com/56088243/thumbnails/1.jpg" /></a></div><div class="wp-workCard wp-workCard_itemContainer"><div class="wp-workCard_item wp-workCard--title"><a class="js-work-strip-work-link text-gray-darker" data-click-track="profile-work-strip-title" href="https://www.academia.edu/36187869/Infrared_detection_of_hydrogen_generated_free_carriers_in_polycrystalline_ZnO_thin_films">Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films</a></div><div class="wp-workCard_item"><span class="js-work-more-abstract-truncated">The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H 2...</span><a class="js-work-more-abstract" data-broccoli-component="work_strip.more_abstract" data-click-track="profile-work-strip-more-abstract" href="javascript:;"><span> more </span><span><i class="fa fa-caret-down"></i></span></a><span class="js-work-more-abstract-untruncated hidden">The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H 2 and O 2 plasmas were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by 10 19 cm −3 by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O 2 plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures 225 ° C and O 2 plasma were required to remove the rest. We demonstrate that combinations of O 2 and H 2 plasma treatments can be used to manipulate the carrier density in ZnO films. However, we also show the existence of significant drifts 15% in the carrier concentrations over very long time scales hours. Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.</span></div><div class="wp-workCard_item wp-workCard--actions"><span class="work-strip-bookmark-button-container"></span><a id="080e502524f83f4a8b60b31a25f94715" class="wp-workCard--action" rel="nofollow" data-click-track="profile-work-strip-download" data-download="{"attachment_id":56088243,"asset_id":36187869,"asset_type":"Work","button_location":"profile"}" href="https://www.academia.edu/attachments/56088243/download_file?s=profile"><span><i class="fa fa-arrow-down"></i></span><span>Download</span></a><span class="wp-workCard--action visible-if-viewed-by-owner inline-block" style="display: none;"><span class="js-profile-work-strip-edit-button-wrapper profile-work-strip-edit-button-wrapper" data-work-id="36187869"><a class="js-profile-work-strip-edit-button" tabindex="0"><span><i class="fa fa-pencil"></i></span><span>Edit</span></a></span></span></div><div class="wp-workCard_item wp-workCard--stats"><span><span><span class="js-view-count view-count u-mr2x" data-work-id="36187869"><i class="fa fa-spinner fa-spin"></i></span><script>$(function () { var workId = 36187869; window.Academia.workViewCountsFetcher.queue(workId, function (count) { var description = window.$h.commaizeInt(count) + " " + window.$h.pluralize(count, 'View'); $(".js-view-count[data-work-id=36187869]").text(description); $(".js-view-count[data-work-id=36187869]").attr('title', description).tooltip(); }); });</script></span></span><span><span class="percentile-widget hidden"><span class="u-mr2x work-percentile"></span></span><script>$(function () { var workId = 36187869; window.Academia.workPercentilesFetcher.queue(workId, function (percentileText) { var container = $(".js-work-strip[data-work-id='36187869']"); container.find('.work-percentile').text(percentileText.charAt(0).toUpperCase() + percentileText.slice(1)); container.find('.percentile-widget').show(); container.find('.percentile-widget').removeClass('hidden'); }); });</script></span></div><div id="work-strip-premium-row-container"></div></div></div><script> require.config({ waitSeconds: 90 })(["https://a.academia-assets.com/assets/wow_profile-a9bf3a2bc8c89fa2a77156577594264ee8a0f214d74241bc0fcd3f69f8d107ac.js","https://a.academia-assets.com/assets/work_edit-ad038b8c047c1a8d4fa01b402d530ff93c45fee2137a149a4a5398bc8ad67560.js"], function() { // from javascript_helper.rb var dispatcherData = {} if (true){ window.WowProfile.dispatcher = window.WowProfile.dispatcher || _.clone(Backbone.Events); dispatcherData = { dispatcher: window.WowProfile.dispatcher, downloadLinkId: "080e502524f83f4a8b60b31a25f94715" } } $('.js-work-strip[data-work-id=36187869]').each(function() { if (!$(this).data('initialized')) { new WowProfile.WorkStripView({ el: this, workJSON: {"id":36187869,"title":"Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films","translated_title":"","metadata":{"abstract":"The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H 2 and O 2 plasmas were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by 10 19 cm −3 by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O 2 plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures 225 ° C and O 2 plasma were required to remove the rest. We demonstrate that combinations of O 2 and H 2 plasma treatments can be used to manipulate the carrier density in ZnO films. However, we also show the existence of significant drifts 15% in the carrier concentrations over very long time scales hours. Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.","ai_title_tag":"Hydrogen Impact on Carriers in ZnO Films"},"translated_abstract":"The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H 2 and O 2 plasmas were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by 10 19 cm −3 by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O 2 plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures 225 ° C and O 2 plasma were required to remove the rest. We demonstrate that combinations of O 2 and H 2 plasma treatments can be used to manipulate the carrier density in ZnO films. However, we also show the existence of significant drifts 15% in the carrier concentrations over very long time scales hours. Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.","internal_url":"https://www.academia.edu/36187869/Infrared_detection_of_hydrogen_generated_free_carriers_in_polycrystalline_ZnO_thin_films","translated_internal_url":"","created_at":"2018-03-17T16:35:03.205-07:00","preview_url":null,"current_user_can_edit":null,"current_user_is_owner":null,"owner_id":32540595,"coauthors_can_edit":true,"document_type":"paper","co_author_tags":[{"id":31204496,"work_id":36187869,"tagging_user_id":32540595,"tagged_user_id":32563251,"co_author_invite_id":null,"email":"c***n@mines.edu","display_order":1,"name":"Colin Wolden","title":"Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films"},{"id":31204497,"work_id":36187869,"tagging_user_id":32540595,"tagged_user_id":null,"co_author_invite_id":569332,"email":"j***r@drexel.edu","display_order":3,"name":"Jason Baxter","title":"Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films"},{"id":31204498,"work_id":36187869,"tagging_user_id":32540595,"tagged_user_id":38412626,"co_author_invite_id":null,"email":"t***s@nrel.gov","display_order":4,"name":"Teresa Barnes","title":"Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films"}],"downloadable_attachments":[{"id":56088243,"title":"","file_type":"pdf","scribd_thumbnail_url":"https://attachments.academia-assets.com/56088243/thumbnails/1.jpg","file_name":"JApplPhys_97_043522.pdf","download_url":"https://www.academia.edu/attachments/56088243/download_file","bulk_download_file_name":"Infrared_detection_of_hydrogen_generated.pdf","bulk_download_url":"https://d1wqtxts1xzle7.cloudfront.net/56088243/JApplPhys_97_043522-libre.pdf?1521330131=\u0026response-content-disposition=attachment%3B+filename%3DInfrared_detection_of_hydrogen_generated.pdf\u0026Expires=1743457731\u0026Signature=AmANXBREyu3-Uc2iEAsWXW9UNJLmKEZa50ITTX0eapV-VDpLIcWpskR07Sc3Kij7Q0MOQZ0bIaYvCibf1zkbAtNNO4zLsU1Wq50peQKkrXc5Tl36ZzmJSQjPITgTo12qMtJJDAkm0HY6WxH8O0KuBAGkK6WT7D1~aqoJosgwzVEKO8s1K69mxfi5~xSPphGo2XqiZo-Bk8VUFgi4vULUo~AMaCS-MrhYZKWTDFeZfvlXt6u849Dw-5LsS9cGrVs14TM-YUzGyR4RN-jbtalvQyLmMbuC6DeN9j3mbDqCL-oPWhh5nzeNmPXiH0us8AiY7S23C1wbXNma~h9YWK-krw__\u0026Key-Pair-Id=APKAJLOHF5GGSLRBV4ZA"}],"slug":"Infrared_detection_of_hydrogen_generated_free_carriers_in_polycrystalline_ZnO_thin_films","translated_slug":"","page_count":7,"language":"en","content_type":"Work","summary":"The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H 2 and O 2 plasmas were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by 10 19 cm −3 by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O 2 plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures 225 ° C and O 2 plasma were required to remove the rest. We demonstrate that combinations of O 2 and H 2 plasma treatments can be used to manipulate the carrier density in ZnO films. However, we also show the existence of significant drifts 15% in the carrier concentrations over very long time scales hours. Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.","owner":{"id":32540595,"first_name":"Eray","middle_initials":null,"last_name":"Aydil","page_name":"ErayAydil","domain_name":"nyu","created_at":"2015-06-25T12:38:18.041-07:00","display_name":"Eray Aydil","url":"https://nyu.academia.edu/ErayAydil"},"attachments":[{"id":56088243,"title":"","file_type":"pdf","scribd_thumbnail_url":"https://attachments.academia-assets.com/56088243/thumbnails/1.jpg","file_name":"JApplPhys_97_043522.pdf","download_url":"https://www.academia.edu/attachments/56088243/download_file","bulk_download_file_name":"Infrared_detection_of_hydrogen_generated.pdf","bulk_download_url":"https://d1wqtxts1xzle7.cloudfront.net/56088243/JApplPhys_97_043522-libre.pdf?1521330131=\u0026response-content-disposition=attachment%3B+filename%3DInfrared_detection_of_hydrogen_generated.pdf\u0026Expires=1743457731\u0026Signature=AmANXBREyu3-Uc2iEAsWXW9UNJLmKEZa50ITTX0eapV-VDpLIcWpskR07Sc3Kij7Q0MOQZ0bIaYvCibf1zkbAtNNO4zLsU1Wq50peQKkrXc5Tl36ZzmJSQjPITgTo12qMtJJDAkm0HY6WxH8O0KuBAGkK6WT7D1~aqoJosgwzVEKO8s1K69mxfi5~xSPphGo2XqiZo-Bk8VUFgi4vULUo~AMaCS-MrhYZKWTDFeZfvlXt6u849Dw-5LsS9cGrVs14TM-YUzGyR4RN-jbtalvQyLmMbuC6DeN9j3mbDqCL-oPWhh5nzeNmPXiH0us8AiY7S23C1wbXNma~h9YWK-krw__\u0026Key-Pair-Id=APKAJLOHF5GGSLRBV4ZA"}],"research_interests":[],"urls":[]}, dispatcherData: dispatcherData }); $(this).data('initialized', true); } }); $a.trackClickSource(".js-work-strip-work-link", "profile_work_strip") if (false) { Aedu.setUpFigureCarousel('profile-work-36187869-figures'); } }); </script> <div class="js-work-strip profile--work_container" data-work-id="36187844"><div class="profile--work_thumbnail hidden-xs"><a class="js-work-strip-work-link" data-click-track="profile-work-strip-thumbnail" href="https://www.academia.edu/36187844/Feature_scale_model_of_Si_etching_in_SF_O_HBr_plasma_and_comparison_with_experiments"><img alt="Research paper thumbnail of Feature scale model of Si etching in SF�/O�/HBr plasma and comparison with experiments" class="work-thumbnail" src="https://attachments.academia-assets.com/56088234/thumbnails/1.jpg" /></a></div><div class="wp-workCard wp-workCard_itemContainer"><div class="wp-workCard_item wp-workCard--title"><a class="js-work-strip-work-link text-gray-darker" data-click-track="profile-work-strip-title" href="https://www.academia.edu/36187844/Feature_scale_model_of_Si_etching_in_SF_O_HBr_plasma_and_comparison_with_experiments">Feature scale model of Si etching in SF�/O�/HBr plasma and comparison with experiments</a></div><div class="wp-workCard_item"><span class="js-work-more-abstract-truncated">We have developed a semiempirical feature scale model of Si etching in SF 6 /O 2 / HBr plasma. Su...</span><a class="js-work-more-abstract" data-broccoli-component="work_strip.more_abstract" data-click-track="profile-work-strip-more-abstract" href="javascript:;"><span> more </span><span><i class="fa fa-caret-down"></i></span></a><span class="js-work-more-abstract-untruncated hidden">We have developed a semiempirical feature scale model of Si etching in SF 6 /O 2 / HBr plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in SF 6 and SF 6 /O 2 plasmas and Br-based Si etching in HBr plasma. The kinetic parameters in the model are constrained by matching simulated feature profiles with those experimentally obtained at various feed gas compositions. Excellent agreement between experiments and simulations is obtained. The combined experimental and profile simulation study reveals that the addition of HBr to SF 6 /O 2 plasmas results in improved sidewall passivation and elimination of the mask undercut. The vertical etch rate increases as a result of F and Br fluxes focusing toward the bottom of the feature by reflections from passivated sidewalls. Addition of SF 6 to HBr discharge increases the etch rate through chemical etching that produces volatile SiBr 4−x F x etch products and ion-enhanced chemical sputtering of fluorinated and brominated Si surfaces by F-containing ions.</span></div><div class="wp-workCard_item"><div class="carousel-container carousel-container--sm" id="profile-work-36187844-figures"><div class="prev-slide-container js-prev-button-container"><button aria-label="Previous" class="carousel-navigation-button js-profile-work-36187844-figures-prev"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">arrow_back_ios</span></button></div><div class="slides-container js-slides-container"><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074749/figure-1-fic-relative-br-concentration-in-hbr-plasma-as"><img alt="Fic. 1. Relative Br concentration in HBr plasma as a function of the rf power supplied to the rf coil and pressures at 5 mTorr (A), 25 mTorr (@), and 40 mTorr (Ml). Lines are drawn to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074766/figure-2-fic-sem-cross-sections-of-diam-holes-etched-for-and"><img alt="Fic. 2. SEM cross sections of 0.35 2m diam holes etched for (a) 150 and (b) 300 s using the base case conditions listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074784/figure-3-fic-sem-cross-sections-of-ym-diam-holes-etched-for"><img alt="Fic. 3. SEM cross sections of 0.35 ym diam holes etched for 300 s using the base case conditions listed in Table I with pressures at (a) 5 mTorr, (b) 25 mTorr, and (c) 40 mTorr, and (d) the variation of the Br concentration (HM) and ion current (@) with pressure. The dotted line represents the Si- oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_003.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074805/figure-4-fic-sem-cross-sections-of-wm-diam-holes-etched-for"><img alt="Fic. 4. SEM cross sections of 0.35 wm diam holes etched for 300 s using the base case conditions listed in Table I with (a) -40 V, (b) —80 V, and (c) -100 V rf biases applied to the ESC. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_004.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074810/figure-8-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 5. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles of 0.35 wm diam holes etched for (a) 150 s and (b) 300 s. Simulation parameters correspond to etching at the base case conditions listed in Table I. The dotted line represents the Si-oxide mask interface. bardment and not laterally because of negligible chemical etching. Furthermore, the ion-enhanced etch rate depends sensitively on the ion incidence angle, as shown in curve 1, Fig. 8(a). This functional form of the ion angle dependence of the etch yield, f(¢), gives rise to feature sidewalls that slope inwards toward the bottom [profile 1 in Fig. 8(b)] and agrees well with the functional form obtained from direct " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_005.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074821/figure-6-fic-simulated-reflected-ion-energy-distribution"><img alt="Fic. 6. Simulated reflected ion energy distribution function (IEDF) and in- cidence angle distribution function (IADF). Incident ions arriving at the surface at near glancing angles (~85°—90°) are reflected specularly and retain a significant fraction of their incident energy. The average reflected energy fraction decreases as the incidence angle approaches 0° (normal in- cidence). The model parameters are EXi=1, Ping=86°, m=5, n,=2, and ¢min=89°. Details on the functional form of the reflected IEDF and [ADF can be found in previous publications (Refs. 10 and 20). " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_006.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074827/figure-7-fic-effect-of-the-angle-dependence-of-the-si"><img alt="Fic. 8. Effect of the angle dependence of the Si etching yield on the simu- lated profiles of a 0.35 4m diam hole. Simulation parameters correspond to etching at the base case conditions. In curve | the yield is constant near normal incidence and decreases monotonically with the ion angle beyond 20° toward zero at nearly grazing angles. In curve 2 the yield is independent of the ion angle. sticking coefficient, yg,=1, and a slightly lower Si etching yield proportionality constant, A=0.5, also give an excellent match not shown). To further constrain t he kinetic param- eters, we used actinometry and ion flux planar probe data to estimate the pressure sca tively. perimentally observed pr ure 9 shows the effect of the etc Using these data we then attempted h rate and profile shape of the ing of the Br and ion fluxes, respec- to match the ex- ofiles as a function of pressure. Fig- the Br sticking coefficient, yg,, on feature etched at " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_007.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074838/figure-6-fic-effect-of-ion-reflections-off-the-oxide-mask-on"><img alt="Fic. 7. Effect of ion reflections off the oxide mask on the simulated profiles of a 0.35 wm diam hole. Simulation parameters correspond to etching at the base case conditions listed in Table I. The IEDF and IADF of reflected ions are shown in Fig. 6. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_008.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074847/figure-3-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 10. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles of 0.35 wm diam holes etched for 300 s at (a) 5 mTorr, (b) 25 mTorr, and (c) 40 mTorr. All other plasma etching con- ditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. 5 mTorr [Fig. 3(a)]. Increasing yp, results in higher Br sur- face coverages and, consequently, higher etch rates. A low Br sticking coefficient, yg,=0.1, captures more closely the etch rate and profile shape observed at 5 mTorr [Fig. 10(a)]. The effect of the Br sticking coefficient is emphasized under Br- " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_009.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074861/figure-10-fic-effect-of-the-br-sticking-coefficient-on-the"><img alt="Fic. 9. Effect of the Br sticking coefficient on the simulated profiles of a 0.35 wm diam hole. Simulation parameters correspond to etching at 5 mTorr. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_010.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074870/figure-11-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 11. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles for 0.35 zm diam holes etched for 300 s with (a) —40 V, (b) —80 V, and (c) -100 V rf biases applied to the ESC. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_011.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074880/figure-12-fic-sem-cross-section-of-um-diam-holes-etched-for"><img alt="Fic. 12. SEM cross section of 0.2 um diam holes etched for 150 s using 35 SCCM SF, and 40 SCCM HBr flow rates at 25 mTorr with 800 W rf power supplied to the rf coil to maintain the plasma and —120 V rf bias applied to the ESC. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_012.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074896/figure-13-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 13. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles for 0.2 wm diam holes etched for 150s using 35 SCCM SF, and 40 SCCM HBr flow rates at 25 mTorr with 800 W rf power supplied to the rf coil to maintain the plasma and —120 V rf bias applied to the ESC. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_013.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074929/figure-14-fic-normal-boiling-point-of-sibry-as-function-of"><img alt="Fic. 14. Normal boiling point of SiBry_,F, as a function of x atoms of F. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_014.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074937/figure-15-fic-effect-of-the-chemical-etch-rate-constant-kp"><img alt="Fic. 15. Effect of (a) the chemical etch rate constant kp,, (b) the Br stoichio- metric factor xp,, (c) the Br flux I'g,, and (d) the proportionality constant of the brominated Si etching yield Ag; g, on the simulated profile for a 0.2 wm diam hole. Simulation parameters correspond to etching for 150s using 35 SCCM SF, and 40 SCCM HBr flow rates at 25 mTorr with 800 W ri power supplied to maintain the plasma and —120 V rf bias applied to the ESC. All other model parameters were kept constant at their base values listed in Table III. Increasing kg, in (a) decreases the vertical etch rate and increases the lateral chemical etch rate resulting in a more isotropic profile. Increasing xp, in (b) increases the lateral chemical etch rate, likewise result- ing in a more isotropic profile. Increasing I';, in (c) results in a higher Br surface coverage and, consequently, higher etch rate. Increasing Ag; , in (d) increases the vertical ion-enhanced etch rate. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_015.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074953/figure-16-feature-scale-model-of-si-etching-in-sf-hbr-plasma"><img alt="" class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_016.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074965/figure-17-fic-incidence-angle-dependence-of-the-ion-enhanced"><img alt="Fic. 18. Incidence angle dependence of the ion-enhanced O sputtering etch- ing yield. In curve | the yield follows the same incidence angle dependence as ion-enhanced Si etching. The yield is constant for incidence angles from normal incidence to 60° and decreases monotonically toward zero for inci- dence angles greater than 60°. In curve | the yield is zero for nearly grazing angles, i.e., incidence angles greater than 85°. yield in pristine HBr plasma obtained through profile simu- lation (see previous section on HBr plasma etching) corre- sponds to the etch yield of a Br* ion, the dominant ion in HBr plasma. Analysis of mass spectrometry data suggests " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_017.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074980/figure-18-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 17. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles for 0.2 wm diameter holes etched for 150 s using 35 SCCM SF,, 45 SCCM O,, and 40 SCCM HBr flow rates. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_018.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074992/figure-18-fic-simulated-and-surface-coverages-and-etch-rate"><img alt="Fic. 19. Simulated (a) O and (b) F surface coverages and (c) etch rate at the bottom of the feature as functions of time. Simulation parameters corre- spond to etching of 0.2 wm diam holes using 35 SCCM SF,, 45 SCCM O;, and 40 SCCM HBr flow rates at 25 mTorr with 800 W rf power supplied to maintain the plasma and —120 V rf bias applied to the ESC. The surface coverages and etch rates are shown for two different O sputtering yields: open symbols correspond to the incidence angle dependence given by curve 1 in Fig. 18 and filled symbols correspond to a higher O sputtering yield with the incidence angle dependence given by curve 2 in Fig. 18. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_019.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075009/figure-20-fic-comparison-between-experimentally-observed"><img alt="Fic. 20. Comparison between experimentally observed (solid line) and simulated (dashed line) profiles for 0.2 ~m diam holes etched using 35 SCCM SF, with (a) 45 SCCM O, and no HBr, (b) 45 SCCM O, and 20 SCCM HBr, (c) 45 SCCM O, and 40 SCCM HBr, and (d) no O, and 40 SCCM HBr. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_020.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075020/table-1-base-etching-process-conditions"><img alt="TABLE I. Base etching process conditions. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/table_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075030/table-2-ii-model-parameters-for-simulating-the-best-match"><img alt="TABLE II. Model parameters for simulating the best match with experiments. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/table_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075044/table-3-iii-base-values-of-model-parameters"><img alt="TABLE III. Base values of model parameters. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/table_003.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075053/figure-20-iv-model-parameters-for-simulating-the-best-match"><img alt="TABLE IV. Model parameters for simulating the best match with experiment (Fig. 20). sputtering yield. Increasing the O sputtering yield decreases O surface coverages and increases F surface coverages at the bottom of the feature, resulting in higher vertical etch rates. Figure 20 shows the agreement between simulated and ex- perimentally observed profiles. The model parameters used in Fig. 20 are summarized in Table IV. 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We have investigated etching of deep features ( ˜10 mum) using low pressure (5-80 mTorr), high density, inductively coupled plasmas maintained in mixtures of SF6 and O2 gases, with a biased substrate. Various plasma diagnostics, scanning electron microscopy and feature profile evolution simulations</span></div><div class="wp-workCard_item"><div class="carousel-container carousel-container--sm" id="profile-work-21062747-figures"><div class="prev-slide-container js-prev-button-container"><button aria-label="Previous" class="carousel-navigation-button js-profile-work-21062747-figures-prev"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">arrow_back_ios</span></button></div><div class="slides-container js-slides-container"><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753257/figure-1-fic-ion-current-density-as-function-of-pressure-in"><img alt="Fic. 1. Ion current density as a function of pressure in a SF, plasma as measured using an ion flux probe and as estimated from the rf-bias power and time-averaged rf-bias voltage. Lines are drawn through the data points to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753260/figure-2-fic-schematic-showing-mask-undercut-and-sidewall"><img alt="Fic. 2. Schematic showing mask undercut, 6, and sidewall slope, 6, param- eters used to quantify the feature anisotropy. The feature shape is quantified through the mask undercut, 6, the lateral distance etched directly below the mask, and the sidewall slope, 6, the angle between the feature sidewall and the wafer plane. Sidewalls are said to be (a) negatively tapered when 6>90° and (b) positively tapered when 6<90°. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753262/figure-3-fic-sem-cross-sections-of-holes-etched-at-mtorr"><img alt="Fic. 4. SEM cross sections of holes etched at (a) 10 mTorr, (b) 25 mTorr, (c) 40 mTorr, and (d) 75 mTorr. Other plasma etching conditions were kept constant at the base values listed in Table I. The oxide mask- Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_003.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753267/figure-4-etching-of-high-aspect-ratio-structures-in-si-using"><img alt="" class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_004.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753286/figure-5-fic-sem-cross-section-of-holes-etched-with-and-rf"><img alt="Fic. 6. SEM cross section of holes etched with (a) 0 V, (b) —20 V, (c) —40 V, and (d) —120 V rf-bias voltage applied to the electrostatic chuck. Other plasma etching conditions were kept constant at the base values listed in Table I. An oxide mask- Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_005.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753290/figure-5-fic-si-etch-rate-ml-selectivity-mask-undercut-and"><img alt="Fic. 5. (a) Si etch rate (Ml), (b) selectivity (W), (c) mask undercut, 6 (@), and sidewall slope, @ (A), and (d) ion current density (), F-to-O ratio (*), and F concentration (+) as functions of rf-bias voltage. Other plasma etch- ing conditions were kept constant at the base values listed in Table I. Lines are drawn through the data points to guide the eye. surface independently from the flux of ions and reactive neu- trals in the plasma.”’ Thus, ion and radical generation in the plasma is approximately decoupled from ion acceleration in the sheath and changing the rf-bias voltage primarily changes the ion energy. For example, Fig. 5(c) shows the ion current, F concentration, and F-to-O flux ratio as functions of the rf-bias voltage; indeed, these three plasma properties re- main constant with changing rf-bias voltage. Increasing the ion energy increases the etch rate, but the increase is sublin- ear and eventually saturates at 1.7 u~m/min when the rf-bias increases above —120 V. Higher-energy ions also sputter the " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_006.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753294/figure-7-etching-of-high-aspect-ratio-structures-in-si-using"><img alt="" class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_007.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753303/figure-8-fic-sem-cross-sections-of-holes-etched-with-sf-to"><img alt="Fic. 8. SEM cross sections of holes etched with a SF,-to-O, ratio in the feed gas maintained at (a) 1.29(45sccmSF,/35sccmO,), (b) 1.00 (40 sccm SF,/40 sccm 02), (c) 0.78 (35 sccm SF,/45 sccm O,), and (d) 0.60 (30 sccm SF,/60 sccm 0). The rf-bias voltage applied to the elec- trostatic chuck was —120 V and all other plasma etching conditions were kept constant at the base values listed in Table I. Oxide mask-Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_008.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753312/figure-9-fic-etching-yield-calculated-from-the-experiments"><img alt="Fic. 10. Etching yield calculated from the experiments shown in Figs. 5 and 7 as a function of the F-flux-to-ion flux ratio, [;/[, for two different rf bias (ion energy) values, —20 and —40 V. Lines are drawn through the data points to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_009.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753325/figure-11-fic-mass-spectrum-of-positive-ions-in-the-plasma"><img alt="Fic. 11. Mass spectrum of positive ions in the plasma sampled through a pinhole in the chamber walls. where ER is the etch rate and pg; is the Si atomic density. Mass separation of the ions impinging on the chamber walls indicate that SOF," and SOF* are the dominant positive ions under the process conditions used in this study followed in magnitude by O,~ , SO*, SF,*, and SF;*, ass hown in Fig. 11. The main etchant is assumed to be F atoms, but reactive SF, fragments also impinge on the surface potential sources of F. By Ip, we mean the total fl and are ux of F atoms impinging on the surface as F as well as SF,. We obtain an upper limit on I’; by estimating the degree of SF, dissociation in the plasma using mass spectrome try. The mass spectrum measured with no plasma (only gas) corre- sponds to the cracking pattern of SF, and O, in the mass spectrometer ionizer. When the plasma is tumed on, ions created from SO,F, fragments are also detected, in addition to SF,*, O* and O,*. However, the SF,* ions s till have intensities consistent with the cracking pattern of SF, in the " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_010.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753330/figure-11-fic-sem-cross-sections-of-holes-etched-with-sf-to"><img alt="Fic. 9. SEM cross sections of holes etched with a SF,-to-O, ratio in the feed gas maintained at (a) 2 and (b) 1. The total feed gas flow rate was 250 sccm and all other plasma etching conditions were kept constant at the base values listed in Table I. The oxide mask- Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_011.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753340/figure-12-fic-sketch-of-the-trajectories-on-the-yield-versus"><img alt="Fic. 12. A sketch of the trajectories, on the yield versus the ';/I’, plane, of the experiments where pressure and rf-bias voltage are changed. E,<E, <E; refer to ion energies. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_012.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753348/figure-13-fic-etching-yield-as-function-of-rf-bias-ion"><img alt="Fic. 13. Etching yield as a function of rf bias (ion energy) while keeping l';/I, approximately constant at ~600. (It is impossible to set the p/T to a constant experimentally; the values used in generating this plot were distributed between 520 and 740. The mean was 600 and the standard deviation was 60.) The line through the data points was drawn to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_013.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753350/figure-14-fic-the-sem-cross-section-of-holes-etched-under"><img alt="Fic. 14. The SEM cross section of 0.35-~m holes etched under plasma operating conditions listed in Table III. The oxide mask-Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_014.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753354/table-1-base-etching-process-conditions"><img alt="TABLE I. Base etching process conditions. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/table_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753359/table-2-ii-comparison-of-etching-yields-for-two-different-sf"><img alt="TABLE II. A comparison of etching yields for two different SF,-to-O, ratios in the feed gas. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/table_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753361/figure-13-iii-process-conditions-that-result-in-the-feature"><img alt="TABLE III. Process conditions that result in the feature profile shown in Fig. 13. 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Comparison of etched (bottom) and simulated profiles (top) as a function of SF,-toO, ratio in an SF;/O2 plasma. The flow rates of SF, and O, are ratios are given at the bottom of each profile References " class="figure-slide-image" src="https://figures.academia-assets.com/41696568/figure_001.jpg" /></a></figure></div><div class="next-slide-container js-next-button-container"><button aria-label="Next" class="carousel-navigation-button js-profile-work-21062743-figures-next"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">arrow_forward_ios</span></button></div></div></div><div class="wp-workCard_item wp-workCard--actions"><span class="work-strip-bookmark-button-container"></span><a id="226553de45388d29c6df5449f1357260" class="wp-workCard--action" rel="nofollow" data-click-track="profile-work-strip-download" data-download="{"attachment_id":41696568,"asset_id":21062743,"asset_type":"Work","button_location":"profile"}" href="https://www.academia.edu/attachments/41696568/download_file?s=profile"><span><i class="fa fa-arrow-down"></i></span><span>Download</span></a><span class="wp-workCard--action visible-if-viewed-by-owner inline-block" style="display: none;"><span class="js-profile-work-strip-edit-button-wrapper profile-work-strip-edit-button-wrapper" data-work-id="21062743"><a class="js-profile-work-strip-edit-button" tabindex="0"><span><i class="fa fa-pencil"></i></span><span>Edit</span></a></span></span></div><div class="wp-workCard_item wp-workCard--stats"><span><span><span class="js-view-count view-count u-mr2x" data-work-id="21062743"><i class="fa fa-spinner fa-spin"></i></span><script>$(function () { var workId = 21062743; window.Academia.workViewCountsFetcher.queue(workId, function (count) { var description = window.$h.commaizeInt(count) + " " + window.$h.pluralize(count, 'View'); $(".js-view-count[data-work-id=21062743]").text(description); $(".js-view-count[data-work-id=21062743]").attr('title', description).tooltip(); }); });</script></span></span><span><span class="percentile-widget hidden"><span class="u-mr2x work-percentile"></span></span><script>$(function () { var workId = 21062743; window.Academia.workPercentilesFetcher.queue(workId, function (percentileText) { var container = $(".js-work-strip[data-work-id='21062743']"); container.find('.work-percentile').text(percentileText.charAt(0).toUpperCase() + percentileText.slice(1)); container.find('.percentile-widget').show(); container.find('.percentile-widget').removeClass('hidden'); }); });</script></span></div><div id="work-strip-premium-row-container"></div></div></div><script> require.config({ waitSeconds: 90 })(["https://a.academia-assets.com/assets/wow_profile-a9bf3a2bc8c89fa2a77156577594264ee8a0f214d74241bc0fcd3f69f8d107ac.js","https://a.academia-assets.com/assets/work_edit-ad038b8c047c1a8d4fa01b402d530ff93c45fee2137a149a4a5398bc8ad67560.js"], function() { // from javascript_helper.rb var dispatcherData = {} if (true){ window.WowProfile.dispatcher = window.WowProfile.dispatcher || _.clone(Backbone.Events); dispatcherData = { dispatcher: window.WowProfile.dispatcher, downloadLinkId: "226553de45388d29c6df5449f1357260" } } $('.js-work-strip[data-work-id=21062743]').each(function() { if (!$(this).data('initialized')) { new WowProfile.WorkStripView({ el: this, workJSON: {"id":21062743,"title":"Etching of High Aspect Ratio Structures in Silicon","translated_title":"","metadata":{"ai_abstract":"The study investigates plasma etching of high aspect ratio silicon structures using SF6/O2 plasma, focusing on the etching kinetics necessary for manufacturing capacitors in memory and MEMS systems. 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The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by 10 19 cm −3 by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O 2 plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures 225 ° C and O 2 plasma were required to remove the rest. We demonstrate that combinations of O 2 and H 2 plasma treatments can be used to manipulate the carrier density in ZnO films. However, we also show the existence of significant drifts 15% in the carrier concentrations over very long time scales hours. Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.</span></div><div class="wp-workCard_item wp-workCard--actions"><span class="work-strip-bookmark-button-container"></span><a id="080e502524f83f4a8b60b31a25f94715" class="wp-workCard--action" rel="nofollow" data-click-track="profile-work-strip-download" data-download="{"attachment_id":56088243,"asset_id":36187869,"asset_type":"Work","button_location":"profile"}" href="https://www.academia.edu/attachments/56088243/download_file?s=profile"><span><i class="fa fa-arrow-down"></i></span><span>Download</span></a><span class="wp-workCard--action visible-if-viewed-by-owner inline-block" style="display: none;"><span class="js-profile-work-strip-edit-button-wrapper profile-work-strip-edit-button-wrapper" data-work-id="36187869"><a class="js-profile-work-strip-edit-button" tabindex="0"><span><i class="fa fa-pencil"></i></span><span>Edit</span></a></span></span></div><div class="wp-workCard_item wp-workCard--stats"><span><span><span class="js-view-count view-count u-mr2x" data-work-id="36187869"><i class="fa fa-spinner fa-spin"></i></span><script>$(function () { var workId = 36187869; window.Academia.workViewCountsFetcher.queue(workId, function (count) { var description = window.$h.commaizeInt(count) + " " + window.$h.pluralize(count, 'View'); $(".js-view-count[data-work-id=36187869]").text(description); $(".js-view-count[data-work-id=36187869]").attr('title', description).tooltip(); }); });</script></span></span><span><span class="percentile-widget hidden"><span class="u-mr2x work-percentile"></span></span><script>$(function () { var workId = 36187869; window.Academia.workPercentilesFetcher.queue(workId, function (percentileText) { var container = $(".js-work-strip[data-work-id='36187869']"); container.find('.work-percentile').text(percentileText.charAt(0).toUpperCase() + percentileText.slice(1)); container.find('.percentile-widget').show(); container.find('.percentile-widget').removeClass('hidden'); }); });</script></span></div><div id="work-strip-premium-row-container"></div></div></div><script> require.config({ waitSeconds: 90 })(["https://a.academia-assets.com/assets/wow_profile-a9bf3a2bc8c89fa2a77156577594264ee8a0f214d74241bc0fcd3f69f8d107ac.js","https://a.academia-assets.com/assets/work_edit-ad038b8c047c1a8d4fa01b402d530ff93c45fee2137a149a4a5398bc8ad67560.js"], function() { // from javascript_helper.rb var dispatcherData = {} if (true){ window.WowProfile.dispatcher = window.WowProfile.dispatcher || _.clone(Backbone.Events); dispatcherData = { dispatcher: window.WowProfile.dispatcher, downloadLinkId: "080e502524f83f4a8b60b31a25f94715" } } $('.js-work-strip[data-work-id=36187869]').each(function() { if (!$(this).data('initialized')) { new WowProfile.WorkStripView({ el: this, workJSON: {"id":36187869,"title":"Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films","translated_title":"","metadata":{"abstract":"The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H 2 and O 2 plasmas were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. 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Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.","ai_title_tag":"Hydrogen Impact on Carriers in ZnO Films"},"translated_abstract":"The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H 2 and O 2 plasmas were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by 10 19 cm −3 by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O 2 plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures 225 ° C and O 2 plasma were required to remove the rest. 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The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by 10 19 cm −3 by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O 2 plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures 225 ° C and O 2 plasma were required to remove the rest. We demonstrate that combinations of O 2 and H 2 plasma treatments can be used to manipulate the carrier density in ZnO films. However, we also show the existence of significant drifts 15% in the carrier concentrations over very long time scales hours. Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.","owner":{"id":32540595,"first_name":"Eray","middle_initials":null,"last_name":"Aydil","page_name":"ErayAydil","domain_name":"nyu","created_at":"2015-06-25T12:38:18.041-07:00","display_name":"Eray Aydil","url":"https://nyu.academia.edu/ErayAydil"},"attachments":[{"id":56088243,"title":"","file_type":"pdf","scribd_thumbnail_url":"https://attachments.academia-assets.com/56088243/thumbnails/1.jpg","file_name":"JApplPhys_97_043522.pdf","download_url":"https://www.academia.edu/attachments/56088243/download_file","bulk_download_file_name":"Infrared_detection_of_hydrogen_generated.pdf","bulk_download_url":"https://d1wqtxts1xzle7.cloudfront.net/56088243/JApplPhys_97_043522-libre.pdf?1521330131=\u0026response-content-disposition=attachment%3B+filename%3DInfrared_detection_of_hydrogen_generated.pdf\u0026Expires=1743457731\u0026Signature=AmANXBREyu3-Uc2iEAsWXW9UNJLmKEZa50ITTX0eapV-VDpLIcWpskR07Sc3Kij7Q0MOQZ0bIaYvCibf1zkbAtNNO4zLsU1Wq50peQKkrXc5Tl36ZzmJSQjPITgTo12qMtJJDAkm0HY6WxH8O0KuBAGkK6WT7D1~aqoJosgwzVEKO8s1K69mxfi5~xSPphGo2XqiZo-Bk8VUFgi4vULUo~AMaCS-MrhYZKWTDFeZfvlXt6u849Dw-5LsS9cGrVs14TM-YUzGyR4RN-jbtalvQyLmMbuC6DeN9j3mbDqCL-oPWhh5nzeNmPXiH0us8AiY7S23C1wbXNma~h9YWK-krw__\u0026Key-Pair-Id=APKAJLOHF5GGSLRBV4ZA"}],"research_interests":[],"urls":[]}, dispatcherData: dispatcherData }); $(this).data('initialized', true); } }); $a.trackClickSource(".js-work-strip-work-link", "profile_work_strip") if (false) { Aedu.setUpFigureCarousel('profile-work-36187869-figures'); } }); </script> <div class="js-work-strip profile--work_container" data-work-id="36187844"><div class="profile--work_thumbnail hidden-xs"><a class="js-work-strip-work-link" data-click-track="profile-work-strip-thumbnail" href="https://www.academia.edu/36187844/Feature_scale_model_of_Si_etching_in_SF_O_HBr_plasma_and_comparison_with_experiments"><img alt="Research paper thumbnail of Feature scale model of Si etching in SF�/O�/HBr plasma and comparison with experiments" class="work-thumbnail" src="https://attachments.academia-assets.com/56088234/thumbnails/1.jpg" /></a></div><div class="wp-workCard wp-workCard_itemContainer"><div class="wp-workCard_item wp-workCard--title"><a class="js-work-strip-work-link text-gray-darker" data-click-track="profile-work-strip-title" href="https://www.academia.edu/36187844/Feature_scale_model_of_Si_etching_in_SF_O_HBr_plasma_and_comparison_with_experiments">Feature scale model of Si etching in SF�/O�/HBr plasma and comparison with experiments</a></div><div class="wp-workCard_item"><span class="js-work-more-abstract-truncated">We have developed a semiempirical feature scale model of Si etching in SF 6 /O 2 / HBr plasma. Su...</span><a class="js-work-more-abstract" data-broccoli-component="work_strip.more_abstract" data-click-track="profile-work-strip-more-abstract" href="javascript:;"><span> more </span><span><i class="fa fa-caret-down"></i></span></a><span class="js-work-more-abstract-untruncated hidden">We have developed a semiempirical feature scale model of Si etching in SF 6 /O 2 / HBr plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in SF 6 and SF 6 /O 2 plasmas and Br-based Si etching in HBr plasma. The kinetic parameters in the model are constrained by matching simulated feature profiles with those experimentally obtained at various feed gas compositions. Excellent agreement between experiments and simulations is obtained. The combined experimental and profile simulation study reveals that the addition of HBr to SF 6 /O 2 plasmas results in improved sidewall passivation and elimination of the mask undercut. The vertical etch rate increases as a result of F and Br fluxes focusing toward the bottom of the feature by reflections from passivated sidewalls. Addition of SF 6 to HBr discharge increases the etch rate through chemical etching that produces volatile SiBr 4−x F x etch products and ion-enhanced chemical sputtering of fluorinated and brominated Si surfaces by F-containing ions.</span></div><div class="wp-workCard_item"><div class="carousel-container carousel-container--sm" id="profile-work-36187844-figures"><div class="prev-slide-container js-prev-button-container"><button aria-label="Previous" class="carousel-navigation-button js-profile-work-36187844-figures-prev"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">arrow_back_ios</span></button></div><div class="slides-container js-slides-container"><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074749/figure-1-fic-relative-br-concentration-in-hbr-plasma-as"><img alt="Fic. 1. Relative Br concentration in HBr plasma as a function of the rf power supplied to the rf coil and pressures at 5 mTorr (A), 25 mTorr (@), and 40 mTorr (Ml). Lines are drawn to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074766/figure-2-fic-sem-cross-sections-of-diam-holes-etched-for-and"><img alt="Fic. 2. SEM cross sections of 0.35 2m diam holes etched for (a) 150 and (b) 300 s using the base case conditions listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074784/figure-3-fic-sem-cross-sections-of-ym-diam-holes-etched-for"><img alt="Fic. 3. SEM cross sections of 0.35 ym diam holes etched for 300 s using the base case conditions listed in Table I with pressures at (a) 5 mTorr, (b) 25 mTorr, and (c) 40 mTorr, and (d) the variation of the Br concentration (HM) and ion current (@) with pressure. The dotted line represents the Si- oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_003.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074805/figure-4-fic-sem-cross-sections-of-wm-diam-holes-etched-for"><img alt="Fic. 4. SEM cross sections of 0.35 wm diam holes etched for 300 s using the base case conditions listed in Table I with (a) -40 V, (b) —80 V, and (c) -100 V rf biases applied to the ESC. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_004.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074810/figure-8-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 5. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles of 0.35 wm diam holes etched for (a) 150 s and (b) 300 s. Simulation parameters correspond to etching at the base case conditions listed in Table I. The dotted line represents the Si-oxide mask interface. bardment and not laterally because of negligible chemical etching. Furthermore, the ion-enhanced etch rate depends sensitively on the ion incidence angle, as shown in curve 1, Fig. 8(a). This functional form of the ion angle dependence of the etch yield, f(¢), gives rise to feature sidewalls that slope inwards toward the bottom [profile 1 in Fig. 8(b)] and agrees well with the functional form obtained from direct " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_005.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074821/figure-6-fic-simulated-reflected-ion-energy-distribution"><img alt="Fic. 6. Simulated reflected ion energy distribution function (IEDF) and in- cidence angle distribution function (IADF). Incident ions arriving at the surface at near glancing angles (~85°—90°) are reflected specularly and retain a significant fraction of their incident energy. The average reflected energy fraction decreases as the incidence angle approaches 0° (normal in- cidence). The model parameters are EXi=1, Ping=86°, m=5, n,=2, and ¢min=89°. Details on the functional form of the reflected IEDF and [ADF can be found in previous publications (Refs. 10 and 20). " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_006.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074827/figure-7-fic-effect-of-the-angle-dependence-of-the-si"><img alt="Fic. 8. Effect of the angle dependence of the Si etching yield on the simu- lated profiles of a 0.35 4m diam hole. Simulation parameters correspond to etching at the base case conditions. In curve | the yield is constant near normal incidence and decreases monotonically with the ion angle beyond 20° toward zero at nearly grazing angles. In curve 2 the yield is independent of the ion angle. sticking coefficient, yg,=1, and a slightly lower Si etching yield proportionality constant, A=0.5, also give an excellent match not shown). To further constrain t he kinetic param- eters, we used actinometry and ion flux planar probe data to estimate the pressure sca tively. perimentally observed pr ure 9 shows the effect of the etc Using these data we then attempted h rate and profile shape of the ing of the Br and ion fluxes, respec- to match the ex- ofiles as a function of pressure. Fig- the Br sticking coefficient, yg,, on feature etched at " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_007.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074838/figure-6-fic-effect-of-ion-reflections-off-the-oxide-mask-on"><img alt="Fic. 7. Effect of ion reflections off the oxide mask on the simulated profiles of a 0.35 wm diam hole. Simulation parameters correspond to etching at the base case conditions listed in Table I. The IEDF and IADF of reflected ions are shown in Fig. 6. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_008.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074847/figure-3-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 10. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles of 0.35 wm diam holes etched for 300 s at (a) 5 mTorr, (b) 25 mTorr, and (c) 40 mTorr. All other plasma etching con- ditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. 5 mTorr [Fig. 3(a)]. Increasing yp, results in higher Br sur- face coverages and, consequently, higher etch rates. A low Br sticking coefficient, yg,=0.1, captures more closely the etch rate and profile shape observed at 5 mTorr [Fig. 10(a)]. The effect of the Br sticking coefficient is emphasized under Br- " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_009.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074861/figure-10-fic-effect-of-the-br-sticking-coefficient-on-the"><img alt="Fic. 9. Effect of the Br sticking coefficient on the simulated profiles of a 0.35 wm diam hole. Simulation parameters correspond to etching at 5 mTorr. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_010.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074870/figure-11-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 11. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles for 0.35 zm diam holes etched for 300 s with (a) —40 V, (b) —80 V, and (c) -100 V rf biases applied to the ESC. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_011.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074880/figure-12-fic-sem-cross-section-of-um-diam-holes-etched-for"><img alt="Fic. 12. SEM cross section of 0.2 um diam holes etched for 150 s using 35 SCCM SF, and 40 SCCM HBr flow rates at 25 mTorr with 800 W rf power supplied to the rf coil to maintain the plasma and —120 V rf bias applied to the ESC. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_012.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074896/figure-13-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 13. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles for 0.2 wm diam holes etched for 150s using 35 SCCM SF, and 40 SCCM HBr flow rates at 25 mTorr with 800 W rf power supplied to the rf coil to maintain the plasma and —120 V rf bias applied to the ESC. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_013.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074929/figure-14-fic-normal-boiling-point-of-sibry-as-function-of"><img alt="Fic. 14. Normal boiling point of SiBry_,F, as a function of x atoms of F. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_014.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074937/figure-15-fic-effect-of-the-chemical-etch-rate-constant-kp"><img alt="Fic. 15. Effect of (a) the chemical etch rate constant kp,, (b) the Br stoichio- metric factor xp,, (c) the Br flux I'g,, and (d) the proportionality constant of the brominated Si etching yield Ag; g, on the simulated profile for a 0.2 wm diam hole. Simulation parameters correspond to etching for 150s using 35 SCCM SF, and 40 SCCM HBr flow rates at 25 mTorr with 800 W ri power supplied to maintain the plasma and —120 V rf bias applied to the ESC. All other model parameters were kept constant at their base values listed in Table III. Increasing kg, in (a) decreases the vertical etch rate and increases the lateral chemical etch rate resulting in a more isotropic profile. Increasing xp, in (b) increases the lateral chemical etch rate, likewise result- ing in a more isotropic profile. Increasing I';, in (c) results in a higher Br surface coverage and, consequently, higher etch rate. Increasing Ag; , in (d) increases the vertical ion-enhanced etch rate. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_015.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074953/figure-16-feature-scale-model-of-si-etching-in-sf-hbr-plasma"><img alt="" class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_016.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074965/figure-17-fic-incidence-angle-dependence-of-the-ion-enhanced"><img alt="Fic. 18. Incidence angle dependence of the ion-enhanced O sputtering etch- ing yield. In curve | the yield follows the same incidence angle dependence as ion-enhanced Si etching. The yield is constant for incidence angles from normal incidence to 60° and decreases monotonically toward zero for inci- dence angles greater than 60°. In curve | the yield is zero for nearly grazing angles, i.e., incidence angles greater than 85°. yield in pristine HBr plasma obtained through profile simu- lation (see previous section on HBr plasma etching) corre- sponds to the etch yield of a Br* ion, the dominant ion in HBr plasma. Analysis of mass spectrometry data suggests " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_017.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074980/figure-18-fic-comparison-between-the-experimentally-observed"><img alt="Fic. 17. Comparison between the experimentally observed (solid line) and simulated (dashed line) profiles for 0.2 wm diameter holes etched for 150 s using 35 SCCM SF,, 45 SCCM O,, and 40 SCCM HBr flow rates. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_018.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11074992/figure-18-fic-simulated-and-surface-coverages-and-etch-rate"><img alt="Fic. 19. Simulated (a) O and (b) F surface coverages and (c) etch rate at the bottom of the feature as functions of time. Simulation parameters corre- spond to etching of 0.2 wm diam holes using 35 SCCM SF,, 45 SCCM O;, and 40 SCCM HBr flow rates at 25 mTorr with 800 W rf power supplied to maintain the plasma and —120 V rf bias applied to the ESC. The surface coverages and etch rates are shown for two different O sputtering yields: open symbols correspond to the incidence angle dependence given by curve 1 in Fig. 18 and filled symbols correspond to a higher O sputtering yield with the incidence angle dependence given by curve 2 in Fig. 18. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_019.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075009/figure-20-fic-comparison-between-experimentally-observed"><img alt="Fic. 20. Comparison between experimentally observed (solid line) and simulated (dashed line) profiles for 0.2 ~m diam holes etched using 35 SCCM SF, with (a) 45 SCCM O, and no HBr, (b) 45 SCCM O, and 20 SCCM HBr, (c) 45 SCCM O, and 40 SCCM HBr, and (d) no O, and 40 SCCM HBr. All other plasma etching conditions were kept constant at the base values listed in Table I. The dotted line represents the Si-oxide mask interface. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/figure_020.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075020/table-1-base-etching-process-conditions"><img alt="TABLE I. Base etching process conditions. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/table_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075030/table-2-ii-model-parameters-for-simulating-the-best-match"><img alt="TABLE II. Model parameters for simulating the best match with experiments. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/table_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075044/table-3-iii-base-values-of-model-parameters"><img alt="TABLE III. Base values of model parameters. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/table_003.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/11075053/figure-20-iv-model-parameters-for-simulating-the-best-match"><img alt="TABLE IV. Model parameters for simulating the best match with experiment (Fig. 20). sputtering yield. Increasing the O sputtering yield decreases O surface coverages and increases F surface coverages at the bottom of the feature, resulting in higher vertical etch rates. Figure 20 shows the agreement between simulated and ex- perimentally observed profiles. The model parameters used in Fig. 20 are summarized in Table IV. " class="figure-slide-image" src="https://figures.academia-assets.com/56088234/table_004.jpg" /></a></figure></div><div class="next-slide-container js-next-button-container"><button aria-label="Next" class="carousel-navigation-button js-profile-work-36187844-figures-next"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">arrow_forward_ios</span></button></div></div></div><div class="wp-workCard_item wp-workCard--actions"><span class="work-strip-bookmark-button-container"></span><a id="6f7eb73c26381152df720c89940f70e8" class="wp-workCard--action" rel="nofollow" data-click-track="profile-work-strip-download" data-download="{"attachment_id":56088234,"asset_id":36187844,"asset_type":"Work","button_location":"profile"}" href="https://www.academia.edu/attachments/56088234/download_file?s=profile"><span><i class="fa fa-arrow-down"></i></span><span>Download</span></a><span class="wp-workCard--action visible-if-viewed-by-owner inline-block" style="display: none;"><span class="js-profile-work-strip-edit-button-wrapper profile-work-strip-edit-button-wrapper" data-work-id="36187844"><a class="js-profile-work-strip-edit-button" tabindex="0"><span><i class="fa fa-pencil"></i></span><span>Edit</span></a></span></span></div><div class="wp-workCard_item wp-workCard--stats"><span><span><span class="js-view-count view-count u-mr2x" data-work-id="36187844"><i class="fa fa-spinner fa-spin"></i></span><script>$(function () { var workId = 36187844; window.Academia.workViewCountsFetcher.queue(workId, function (count) { var description = window.$h.commaizeInt(count) + " " + window.$h.pluralize(count, 'View'); $(".js-view-count[data-work-id=36187844]").text(description); $(".js-view-count[data-work-id=36187844]").attr('title', description).tooltip(); }); });</script></span></span><span><span class="percentile-widget hidden"><span class="u-mr2x work-percentile"></span></span><script>$(function () { var workId = 36187844; window.Academia.workPercentilesFetcher.queue(workId, function (percentileText) { var container = $(".js-work-strip[data-work-id='36187844']"); container.find('.work-percentile').text(percentileText.charAt(0).toUpperCase() + percentileText.slice(1)); container.find('.percentile-widget').show(); container.find('.percentile-widget').removeClass('hidden'); }); });</script></span></div><div id="work-strip-premium-row-container"></div></div></div><script> require.config({ waitSeconds: 90 })(["https://a.academia-assets.com/assets/wow_profile-a9bf3a2bc8c89fa2a77156577594264ee8a0f214d74241bc0fcd3f69f8d107ac.js","https://a.academia-assets.com/assets/work_edit-ad038b8c047c1a8d4fa01b402d530ff93c45fee2137a149a4a5398bc8ad67560.js"], function() { // from javascript_helper.rb var dispatcherData = {} if (true){ window.WowProfile.dispatcher = window.WowProfile.dispatcher || _.clone(Backbone.Events); dispatcherData = { dispatcher: window.WowProfile.dispatcher, downloadLinkId: "6f7eb73c26381152df720c89940f70e8" } } $('.js-work-strip[data-work-id=36187844]').each(function() { if (!$(this).data('initialized')) { new WowProfile.WorkStripView({ el: this, workJSON: {"id":36187844,"title":"Feature scale model of Si etching in SF�/O�/HBr plasma and comparison with experiments","translated_title":"","metadata":{"grobid_abstract":"We have developed a semiempirical feature scale model of Si etching in SF 6 /O 2 / HBr plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in SF 6 and SF 6 /O 2 plasmas and Br-based Si etching in HBr plasma. The kinetic parameters in the model are constrained by matching simulated feature profiles with those experimentally obtained at various feed gas compositions. Excellent agreement between experiments and simulations is obtained. The combined experimental and profile simulation study reveals that the addition of HBr to SF 6 /O 2 plasmas results in improved sidewall passivation and elimination of the mask undercut. The vertical etch rate increases as a result of F and Br fluxes focusing toward the bottom of the feature by reflections from passivated sidewalls. Addition of SF 6 to HBr discharge increases the etch rate through chemical etching that produces volatile SiBr 4−x F x etch products and ion-enhanced chemical sputtering of fluorinated and brominated Si surfaces by F-containing ions.","publication_date":{"day":null,"month":null,"year":2006,"errors":{}},"grobid_abstract_attachment_id":56088234},"translated_abstract":null,"internal_url":"https://www.academia.edu/36187844/Feature_scale_model_of_Si_etching_in_SF_O_HBr_plasma_and_comparison_with_experiments","translated_internal_url":"","created_at":"2018-03-17T16:24:09.307-07:00","preview_url":null,"current_user_can_edit":null,"current_user_is_owner":null,"owner_id":32540595,"coauthors_can_edit":true,"document_type":"paper","co_author_tags":[],"downloadable_attachments":[{"id":56088234,"title":"","file_type":"pdf","scribd_thumbnail_url":"https://attachments.academia-assets.com/56088234/thumbnails/1.jpg","file_name":"JVSTASF6_O2_HBr_simul_exp_reprint.pdf","download_url":"https://www.academia.edu/attachments/56088234/download_file","bulk_download_file_name":"Feature_scale_model_of_Si_etching_in_SF.pdf","bulk_download_url":"https://d1wqtxts1xzle7.cloudfront.net/56088234/JVSTASF6_O2_HBr_simul_exp_reprint-libre.pdf?1521329882=\u0026response-content-disposition=attachment%3B+filename%3DFeature_scale_model_of_Si_etching_in_SF.pdf\u0026Expires=1743457731\u0026Signature=b82TPznvBKq1fxNbggYsbdxF7SvEQ~mnLwmpSa7Yc0o9N4dUlP0hsgZWug2Coe8VasHNYGPCpaL0RoZf31Sfx6rmDZ3Fr3IWWUw~gcjMB9ZccZoaEBN9xnto6IlTxNBUlwwE9HLw~Wgk10RUUQB00pLxbog6DFaeUPbesh3~gHpulHU9-e6REDBjo2FJ2g0Anx7-FwQ7lKOM9ycOO80QGZx9XtJLr-jujilVGqHHvQbCIj~kYdR0tgbxJDzsZo6n7LY32yHdnUC-8uduoizfrcUtR21ld3QE2TNh0AHO0V2NTbZNzdsH-R-mLuUgTd~pwXSTFqmQXU8jFzYTpfnukA__\u0026Key-Pair-Id=APKAJLOHF5GGSLRBV4ZA"}],"slug":"Feature_scale_model_of_Si_etching_in_SF_O_HBr_plasma_and_comparison_with_experiments","translated_slug":"","page_count":12,"language":"en","content_type":"Work","summary":"We have developed a semiempirical feature scale model of Si etching in SF 6 /O 2 / HBr plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in SF 6 and SF 6 /O 2 plasmas and Br-based Si etching in HBr plasma. The kinetic parameters in the model are constrained by matching simulated feature profiles with those experimentally obtained at various feed gas compositions. Excellent agreement between experiments and simulations is obtained. The combined experimental and profile simulation study reveals that the addition of HBr to SF 6 /O 2 plasmas results in improved sidewall passivation and elimination of the mask undercut. The vertical etch rate increases as a result of F and Br fluxes focusing toward the bottom of the feature by reflections from passivated sidewalls. 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We have investigated etching of deep features ( ˜10 mum) using low pressure (5-80 mTorr), high density, inductively coupled plasmas maintained in mixtures of SF6 and O2 gases, with a biased substrate. Various plasma diagnostics, scanning electron microscopy and feature profile evolution simulations</span></div><div class="wp-workCard_item"><div class="carousel-container carousel-container--sm" id="profile-work-21062747-figures"><div class="prev-slide-container js-prev-button-container"><button aria-label="Previous" class="carousel-navigation-button js-profile-work-21062747-figures-prev"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">arrow_back_ios</span></button></div><div class="slides-container js-slides-container"><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753257/figure-1-fic-ion-current-density-as-function-of-pressure-in"><img alt="Fic. 1. Ion current density as a function of pressure in a SF, plasma as measured using an ion flux probe and as estimated from the rf-bias power and time-averaged rf-bias voltage. Lines are drawn through the data points to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753260/figure-2-fic-schematic-showing-mask-undercut-and-sidewall"><img alt="Fic. 2. Schematic showing mask undercut, 6, and sidewall slope, 6, param- eters used to quantify the feature anisotropy. The feature shape is quantified through the mask undercut, 6, the lateral distance etched directly below the mask, and the sidewall slope, 6, the angle between the feature sidewall and the wafer plane. Sidewalls are said to be (a) negatively tapered when 6>90° and (b) positively tapered when 6<90°. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753262/figure-3-fic-sem-cross-sections-of-holes-etched-at-mtorr"><img alt="Fic. 4. SEM cross sections of holes etched at (a) 10 mTorr, (b) 25 mTorr, (c) 40 mTorr, and (d) 75 mTorr. Other plasma etching conditions were kept constant at the base values listed in Table I. The oxide mask- Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_003.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753267/figure-4-etching-of-high-aspect-ratio-structures-in-si-using"><img alt="" class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_004.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753286/figure-5-fic-sem-cross-section-of-holes-etched-with-and-rf"><img alt="Fic. 6. SEM cross section of holes etched with (a) 0 V, (b) —20 V, (c) —40 V, and (d) —120 V rf-bias voltage applied to the electrostatic chuck. Other plasma etching conditions were kept constant at the base values listed in Table I. An oxide mask- Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_005.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753290/figure-5-fic-si-etch-rate-ml-selectivity-mask-undercut-and"><img alt="Fic. 5. (a) Si etch rate (Ml), (b) selectivity (W), (c) mask undercut, 6 (@), and sidewall slope, @ (A), and (d) ion current density (), F-to-O ratio (*), and F concentration (+) as functions of rf-bias voltage. Other plasma etch- ing conditions were kept constant at the base values listed in Table I. Lines are drawn through the data points to guide the eye. surface independently from the flux of ions and reactive neu- trals in the plasma.”’ Thus, ion and radical generation in the plasma is approximately decoupled from ion acceleration in the sheath and changing the rf-bias voltage primarily changes the ion energy. For example, Fig. 5(c) shows the ion current, F concentration, and F-to-O flux ratio as functions of the rf-bias voltage; indeed, these three plasma properties re- main constant with changing rf-bias voltage. Increasing the ion energy increases the etch rate, but the increase is sublin- ear and eventually saturates at 1.7 u~m/min when the rf-bias increases above —120 V. Higher-energy ions also sputter the " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_006.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753294/figure-7-etching-of-high-aspect-ratio-structures-in-si-using"><img alt="" class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_007.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753303/figure-8-fic-sem-cross-sections-of-holes-etched-with-sf-to"><img alt="Fic. 8. SEM cross sections of holes etched with a SF,-to-O, ratio in the feed gas maintained at (a) 1.29(45sccmSF,/35sccmO,), (b) 1.00 (40 sccm SF,/40 sccm 02), (c) 0.78 (35 sccm SF,/45 sccm O,), and (d) 0.60 (30 sccm SF,/60 sccm 0). The rf-bias voltage applied to the elec- trostatic chuck was —120 V and all other plasma etching conditions were kept constant at the base values listed in Table I. Oxide mask-Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_008.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753312/figure-9-fic-etching-yield-calculated-from-the-experiments"><img alt="Fic. 10. Etching yield calculated from the experiments shown in Figs. 5 and 7 as a function of the F-flux-to-ion flux ratio, [;/[, for two different rf bias (ion energy) values, —20 and —40 V. Lines are drawn through the data points to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_009.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753325/figure-11-fic-mass-spectrum-of-positive-ions-in-the-plasma"><img alt="Fic. 11. Mass spectrum of positive ions in the plasma sampled through a pinhole in the chamber walls. where ER is the etch rate and pg; is the Si atomic density. Mass separation of the ions impinging on the chamber walls indicate that SOF," and SOF* are the dominant positive ions under the process conditions used in this study followed in magnitude by O,~ , SO*, SF,*, and SF;*, ass hown in Fig. 11. The main etchant is assumed to be F atoms, but reactive SF, fragments also impinge on the surface potential sources of F. By Ip, we mean the total fl and are ux of F atoms impinging on the surface as F as well as SF,. We obtain an upper limit on I’; by estimating the degree of SF, dissociation in the plasma using mass spectrome try. The mass spectrum measured with no plasma (only gas) corre- sponds to the cracking pattern of SF, and O, in the mass spectrometer ionizer. When the plasma is tumed on, ions created from SO,F, fragments are also detected, in addition to SF,*, O* and O,*. However, the SF,* ions s till have intensities consistent with the cracking pattern of SF, in the " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_010.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753330/figure-11-fic-sem-cross-sections-of-holes-etched-with-sf-to"><img alt="Fic. 9. SEM cross sections of holes etched with a SF,-to-O, ratio in the feed gas maintained at (a) 2 and (b) 1. The total feed gas flow rate was 250 sccm and all other plasma etching conditions were kept constant at the base values listed in Table I. The oxide mask- Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_011.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753340/figure-12-fic-sketch-of-the-trajectories-on-the-yield-versus"><img alt="Fic. 12. A sketch of the trajectories, on the yield versus the ';/I’, plane, of the experiments where pressure and rf-bias voltage are changed. E,<E, <E; refer to ion energies. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_012.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753348/figure-13-fic-etching-yield-as-function-of-rf-bias-ion"><img alt="Fic. 13. Etching yield as a function of rf bias (ion energy) while keeping l';/I, approximately constant at ~600. (It is impossible to set the p/T to a constant experimentally; the values used in generating this plot were distributed between 520 and 740. The mean was 600 and the standard deviation was 60.) The line through the data points was drawn to guide the eye. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_013.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753350/figure-14-fic-the-sem-cross-section-of-holes-etched-under"><img alt="Fic. 14. The SEM cross section of 0.35-~m holes etched under plasma operating conditions listed in Table III. The oxide mask-Si interface is shown with a dashed line. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/figure_014.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753354/table-1-base-etching-process-conditions"><img alt="TABLE I. Base etching process conditions. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/table_001.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753359/table-2-ii-comparison-of-etching-yields-for-two-different-sf"><img alt="TABLE II. A comparison of etching yields for two different SF,-to-O, ratios in the feed gas. " class="figure-slide-image" src="https://figures.academia-assets.com/56088173/table_002.jpg" /></a></figure><figure class="figure-slide-container"><a href="https://www.academia.edu/figures/5753361/figure-13-iii-process-conditions-that-result-in-the-feature"><img alt="TABLE III. Process conditions that result in the feature profile shown in Fig. 13. 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Comparison of etched (bottom) and simulated profiles (top) as a function of SF,-toO, ratio in an SF;/O2 plasma. 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