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initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;"><span data-index="9" style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial; font-family: 微软雅黑, "Microsoft YaHei";">近年来，GaN/金刚石异质集成方法成为实现高可靠性、大功率密度的GaN基高电子迁移率晶体管（HEMT）的有效途径之一。晶圆直接键合技术具有高界面热导、低热应力的优势，在材料与器件集成方面颇具前景，但对材料表面面型和粗糙度等质量要求较高。目前，单晶金刚石通过化学机械抛光技术（CMP）可勉强获得直接键合所需的低表面粗糙度和高平整度等条件，可在前期实现小尺寸直接键合。然而，单晶金刚石的大尺寸生长难题极大限制了其应用，成本也居高不下。多晶金刚石具有成本低、尺寸大等优点，但其存在晶粒间界多、应力不均匀、凹坑与凸起不规则等诸多问题，使得CMP技术很难同时满足表面粗糙度、表面平整度等要求，难以实现直接键合。另一方面，厚膜GaN可结合Smart-Cut<span style="box-sizing: border-box; position: relative; font-size: 12px; line-height: 0; vertical-align: ba<em></em>seline; top: -0.5em;">®</span>等技术实现复合半导体制造和异质结构建，但厚膜GaN键合同时面临着更大应力问题。目前，关于厚膜GaN与多晶金刚石的直接键合研究非常少。</span></p> <p style="box-sizing: border-box; margin: 8px 0px; font-size: 16px; line-height: 2em; text-align: justify; text-indent: 38px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;"><span data-index="9" style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial; font-family: 微软雅黑, "Microsoft YaHei";">本研究采用动态入射角度的等离子体抛光技术，在无压力状态下解决多晶金刚石平整度和粗糙度等表面形貌问题，并结合原位硅纳米层沉积辅助的离子束表面活化键合方法，达成了厚膜GaN与多晶金刚石的异质集成，键合率达~92.4%。团队通过变温共焦拉曼光谱技术，研究了GaN/金刚石键合界面在-55℃到250℃温度范围内的残余应力及其随温度变化的规律，发现GaN/金刚石常温键合界面存在~200 MPa的残余应力，且温度升高时界面应力呈不对称增加，即金刚石一侧应力显著增加，而GaN一侧应力变化不大。这归因于GaN与硅纳米键合辅助层具有相似的热膨胀系数（CTE），而金刚石与硅纳米键合辅助层CTE相差较大。这种不对称的界面应力证明了非晶硅纳米层作为缓冲层释放应力的有效性。</span></p> <p style="box-sizing: border-box; margin: 8px 0px; font-size: 16px; line-height: 2em; text-indent: 38px;"><span data-index="9" style="box-sizing: border-box; font-family: 微软雅黑, "Microsoft YaHei";"><span style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;">该研究以《</span><span style="box-sizing: border-box;">Heterogeneous integration of thick GaN and polycrystalline Diamond at room temperature through dynamic plasma polishing and surface-activated bonding</span><span style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;">》为题发表在《Journal of Alloys and Compounds（</span></span><a href="https://www.sciencedirect.com/journal/journal-of-alloys-and-compounds/vol/985/suppl/C" title="Go to table of co<em></em>ntents for this volume/issue" style="box-sizing: border-box; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial; text-decoration-line: none; letter-spacing: 0px; font-family: 微软雅黑, "Microsoft YaHei";"><span data-index="9" style="box-sizing: border-box; color: windowtext; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;">Volume 985</span></a><span data-index="9" style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial; font-family: 微软雅黑, "Microsoft YaHei";">,25 May 2024, 174075；DOI:</span><a href="https://doi.org/10.1016/j.jallcom.2024.174075" target="https://www.sciencedirect.com/science/article/abs/pii/_blank" title="Persistent l<em></em>ink using digital object identifier" style="box-sizing: border-box; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial; text-decoration-line: none; letter-spacing: 0px; font-family: 微软雅黑, "Microsoft YaHei";"><span data-index="9" style="box-sizing: border-box; color: windowtext; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;">10.1016/j.jallcom.2024.174075</span></a><span data-index="9" style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial; font-family: 微软雅黑, "Microsoft YaHei";">）。王鑫华研究员、母凤文博士为论文共同通讯作者，高润华博士为论文第一作者。研究得到国家自然科学基金项目、北京市科委项目等资助。</span></p> <p style="box-sizing: border-box; margin: 8px 0px; font-size: 16px; line-height: 2em; text-align: justify; text-indent: 38px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;"><span data-index="9" style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial; font-family: 微软雅黑, "Microsoft YaHei";">《Journal of Alloys and Compounds》期刊服务于材料学家、物理学家和化学家的跨学科团体，专注于各种材料的合成与结构的研究，以及传统合金化合物的与新学科之间的交互。</span></p> <p style="box-sizing: border-box; margin: 8px 0px; font-size: 16px; line-height: 2em; text-align: justify; text-indent: 38px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;"><span data-index="9" style="box-sizing: border-box; font-family: 微软雅黑, "Microsoft YaHei";"><span style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;">论文链接</span> <span style="box-sizing: border-box; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;">：https://doi.org/10.1016/j.jallcom.2024.174075。</span></span></p> <p style="box-sizing: border-box; margin: 0px 0px 10px; font-size: 15px; line-height: 24px; text-align: center;"><img src="http://www.ime.cas.cn/zhxx/zhxw/202403/W020240321354637675716.jpg" data-uploadpic="U020240321353860002072.jpg" needdownload="true" data-needdownload="true" picname="" alt="" oldsrc="W020240321354637675716.jpg" style="box-sizing: border-box; border: 0px; vertical-align: middle; width: 600px; max-width: 600px;" /></p> <p style="box-sizing: border-box; margin: 0px 0px 10px; line-height: 21px; text-align: center; text-indent: 32px;"><span style="box-sizing: border-box; font-family: 微软雅黑, "Microsoft YaHei";"><span style="box-sizing: border-box; line-height: 21px;">采用</span><span style="box-sizing: border-box; line-height: 21px; letter-spacing: 0px; background-image: initial; background-position: initial; background-size: initial; background-repeat: initial; background-attachment: initial; background-origin: initial; background-clip: initial;">动态等离子体抛光技术和高真空表面活化键合技术实现厚膜GaN与多晶金刚石的常温直接键合</span></span></p> <p style="box-sizing: border-box; margin: 0px 0px 10px; font-size: 15px; line-height: 24px;">（来源：中国科学院微电子研究所 <span style="background-color: rgb(242, 248, 255); color: rgb(136, 136, 136); font-family: 微软雅黑, Arial; text-align: center; font-size: 14px;">高频高压中心</span><span style="text-indent: 2em;">）</span></p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=14815');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=14815"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" 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