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NIASS:蓝宝石基B0.375GaN/B0.45GaN量子阱结构的激光二极管中n-p电极对于p型电导率的影响" src="http://vod.jizhi.top/f00dd26f928d4de99961f4e975536a9b/snapshots/8a30f4bfc57740b7b7f96150bacd0f52-00005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="cover"></div><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p title="【视频报告】郑州大学Mussaab I. NIASS:蓝宝石基B0.375GaN/B0.45GaN量子阱结构的激光二极管中n-p电极对于p型电导率的影响" class="t">【视频报告】郑州大学Mussaab I. NIASS:蓝宝石基B0.375GaN/B0.45GaN量子阱结构的激光二极管中n-p电极对于p型电导率的影响</p><p class="num"><span class="play"><i class="icon"></i>4223</span><span class="danmu"><i class="icon"></i>0</span></p></a></div> <div class="spread-module"><a href="http://www.casmita.com/video/202003/10/554734.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="【视频报告】俄罗斯STR Group Andrey SMIRNOV:碳化硅生长和衬底建模以及基于MOVPE技术的氮化镓生长模拟" src="http://vod.jizhi.top/72774e109dd3425995a60e41408dc679/snapshots/1633d5ae86294cbc86e22459a573b837-00005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="cover"></div><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p title="【视频报告】俄罗斯STR Group Andrey SMIRNOV:碳化硅生长和衬底建模以及基于MOVPE技术的氮化镓生长模拟" class="t">【视频报告】俄罗斯STR Group Andrey SMIRNOV:碳化硅生长和衬底建模以及基于MOVPE技术的氮化镓生长模拟</p><p class="num"><span class="play"><i class="icon"></i>3624</span><span class="danmu"><i class="icon"></i>0</span></p></a></div> </div> </div> </div> <div id="videolist_box" class="video-list list-c"> <div class="vl-hd clearfix"> <div class="left"> <ul class="tab-list order-tab"><a href="#/all/default"><li class="on">时间排序</li></a><a href="#/all/click/0/1/2020-04-26,2020-05-03"><li class="">热度排序</li></a></ul> </div> <div class="right"> <ul class="tab-list display-tab"><li class="mod-1 on"></li><li class="mod-2"></li><li class="mod-3"></li></ul> </div> </div> <div class="vd-list-cnt"> <ul class="vd-list mod-1"> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/10/557404.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="中国科学院半导体研究所李晋闽 研究员:氮化物深紫外LED光源助力公共卫生安全" src="https://vod.jizhi.top/snapshot/fcc37490df5771edbff50764a3fc010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">中国科学院半导体研究所李晋闽 研究员:氮化物深紫外LED光源助力公共卫生安全</p><p class="num"><span class="play"><i class="icon"></i>2110</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/10/557404.html" target="_blank" title="中国科学院半导体研究所李晋闽 研究员:氮化物深紫外LED光源助力公共卫生安全" class="title">中国科学院半导体研究所李晋闽 研究员:氮化物深紫外LED光源助力公共卫生安全</a><div class="v-desc">当前,人们对于绿色、环保、安全的重视度在不断的提高,随着全球化加速发展,公共卫生风险对人口流动和经济活动造成前所未有的限制,防范和化解重大疫情和突发公共卫生风险的重要性不言而喻。基于第三代半导体氮化镓材料的紫外LED光源具有节能环保、寿命长、开启速度快、辐射强度可控、光谱可定制等优势,成为维护公共卫生安全的重要力量。紫外LED是半导体光电产业发展的新蓝海,双碳战略也给包括紫外LED产业在内的绿色环保节能产</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>2110</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-10 15:45</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/10/557403.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="厦门大学张荣 教授:氮化物半导体基Micro-LED显示技术新进展" src="https://vod.jizhi.top/snapshot/fcb4f5a0df5771edbf3f0764a0fd010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">厦门大学张荣 教授:氮化物半导体基Micro-LED显示技术新进展</p><p class="num"><span class="play"><i class="icon"></i>2023</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/10/557403.html" target="_blank" title="厦门大学张荣 教授:氮化物半导体基Micro-LED显示技术新进展" class="title">厦门大学张荣 教授:氮化物半导体基Micro-LED显示技术新进展</a><div class="v-desc">第三代半导体材料在不同领域的应用非常广泛,其中,LED可以说是其第一个较成熟的应用突破口,伴随着元宇宙等新时代的展开,Micro-LED显示应用又迎来了一波新的发展机遇,作为应用的支撑,技术的发展水平非常重要。张荣教授分享了其带领的团队在氮化物半导体基显示技术方面的最新研究及成果。报告结合Micro-LED的优势与挑战,从外延结构设计、芯片制备、全彩化方案、系统集成、纳米LED等方面详细分享了团队最新的多个研究发现和研究</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>2023</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-10 15:43</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/10/557402.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="中国科学院北京纳米能源与系统研究所王中林 院士:第三代半导体中的压电电子学与压电光电子学" src="https://vod.jizhi.top/snapshot/fc10c660df5771ed906d6732b68f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">中国科学院北京纳米能源与系统研究所王中林 院士:第三代半导体中的压电电子学与压电光电子学</p><p class="num"><span class="play"><i class="icon"></i>1999</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/10/557402.html" target="_blank" title="中国科学院北京纳米能源与系统研究所王中林 院士:第三代半导体中的压电电子学与压电光电子学" class="title">中国科学院北京纳米能源与系统研究所王中林 院士:第三代半导体中的压电电子学与压电光电子学</a><div class="v-desc">宽禁带材料具有非中心对称的晶体结构,因而表现出显著的压电特性,长期以来这些材料中压电极化电荷和半导体特性的耦合过程被忽略。近年来对于压电电子学和压电光电子学的基础及应用研究取得了快速地发展。多种功能材料中的压电电子学和压电光电子学的基本效应得到了系统深入地研究,相关的理论体系得以建立,诸多压电电子学和压电光电子学器件也被设计研发。会上,王中林院士带来了压电学理论与研究成果的分享,报告结合具体的数据</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1999</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-10 15:42</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/10/557401.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="西安电子科技大学郝跃院士:超宽禁带半导体器件与材料的若干新进展" src="https://vod.jizhi.top/snapshot/fc150c20df5771ed834e6633b79f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">西安电子科技大学郝跃院士:超宽禁带半导体器件与材料的若干新进展</p><p class="num"><span class="play"><i class="icon"></i>2910</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/10/557401.html" target="_blank" title="西安电子科技大学郝跃院士:超宽禁带半导体器件与材料的若干新进展" class="title">西安电子科技大学郝跃院士:超宽禁带半导体器件与材料的若干新进展</a><div class="v-desc">中国科学院院士、西安电子科技大学郝跃教授带来了超宽禁带半导体器件与材料的若干新进展 的主题报告;中科院外籍院士、中国科学院北京纳米能源与系统研究所王中林院士带来了第三代半导体中的压电电子学与压电光电子学的主题报告;厦门大学校长张荣教授介绍了氮化物半导体基 Micro-LED显示技术新进展;大会主席、中国科学院半导体研究所李晋闽研究员带来了氮化物深紫外LED光源助力公共卫生安全 的主题报告。几大精彩主题报告,从技</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>2910</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-10 15:38</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/09/557407.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="中国科学院苏州纳米技术与纳米仿生研究所刘宗亮:氮化镓单晶衬底生长与应用进展" src="https://vod.jizhi.top/snapshot/ff9a6250df5771eda6460675a0ec010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">中国科学院苏州纳米技术与纳米仿生研究所刘宗亮:氮化镓单晶衬底生长与应用进展</p><p class="num"><span class="play"><i class="icon"></i>1229</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/09/557407.html" target="_blank" title="中国科学院苏州纳米技术与纳米仿生研究所刘宗亮:氮化镓单晶衬底生长与应用进展" class="title">中国科学院苏州纳米技术与纳米仿生研究所刘宗亮:氮化镓单晶衬底生长与应用进展</a><div class="v-desc">常见的氮化镓器件为在异质衬底上长氮化镓外延层制作成半导体器件。但由于使用的是异质衬底,材料之间存在着晶格失配与热失配导致外延材料位错密度比较高,阻碍了相关器件性能的提升及其稳定性。采用氮化镓单晶衬底实现同质外延是提高氮化镓外延层晶体质量进而提高氮化镓器件的主要途径。刘宗亮博士在报告中结合GaN材料生长制备的主要方法及挑战,GaN单晶制备的主要方法与特点以及国际上GaN单晶生长研究进展等,分享了GaN单晶衬底生</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1229</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-09 15:53</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/09/557406.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="山东大学徐现刚教授:GaAs半导体激光器的研究进展" src="https://vod.jizhi.top/snapshot/ff024100df5771edbff50764a3fc010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">山东大学徐现刚教授:GaAs半导体激光器的研究进展</p><p class="num"><span class="play"><i class="icon"></i>2174</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/09/557406.html" target="_blank" title="山东大学徐现刚教授:GaAs半导体激光器的研究进展" class="title">山东大学徐现刚教授:GaAs半导体激光器的研究进展</a><div class="v-desc">半导体激光器的理论和实践都取得巨大成果。近年来,GaAs基大功率半导体激光器凭其优势,在众多领域得到广泛应用。但是GaAs基大功率半导体激光器仍面临着功率不足、发热量大及光束质量差的问题。光电性能差是限制其应用的关键问题,如何进一步提高激光器的光电性能是半导体激光器面临的挑战。朱振博士在报告中,详细分享了GaAs半导体激光器关键技术及最新研究进展,报告指出基于GaAs衬底的6x x(635-690),8 x x(780-880),9 x x</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>2174</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-09 15:50</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/09/557405.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="北京大学沈波教授:氮化物宽禁带半导体大失配异质外延新进展" src="https://vod.jizhi.top/snapshot/fefce9d0df5771ed99817035d0b2010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">北京大学沈波教授:氮化物宽禁带半导体大失配异质外延新进展</p><p class="num"><span class="play"><i class="icon"></i>1802</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/09/557405.html" target="_blank" title="北京大学沈波教授:氮化物宽禁带半导体大失配异质外延新进展" class="title">北京大学沈波教授:氮化物宽禁带半导体大失配异质外延新进展</a><div class="v-desc">以氮化镓、氮化铝为代表的Ⅲ族氮化物宽禁带半导体是研制短波长光电子器件和高频、高功率电子器件的核心材料体系。由于缺少高质量、低成本的同质GaN和AlN衬底,氮化物半导体主要通过异质外延,特别是大失配异质外延来制备。由此导致的高缺陷密度、残余应力成为当前深紫外发光器件、功率电子器件等氮化物半导体器件发展的主要瓶颈,影响了材料和器件性能的提升。沈波教授在报告中,结合氮化物半导体面临的大失配外延生长问题、详细分</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1802</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-09 15:47</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/08/557409.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="圆桌对话:碳化硅、氮化镓和氧化镓功率半导体的应用领域、关键科学技术问题及解决之道" src="https://vod.jizhi.top/snapshot/00345860df5871eda6460675a0ec010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">圆桌对话:碳化硅、氮化镓和氧化镓功率半导体的应用领域、关键科学技术问题及解决之道</p><p class="num"><span class="play"><i class="icon"></i>1239</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/08/557409.html" target="_blank" title="圆桌对话:碳化硅、氮化镓和氧化镓功率半导体的应用领域、关键科学技术问题及解决之道" class="title">圆桌对话:碳化硅、氮化镓和氧化镓功率半导体的应用领域、关键科学技术问题及解决之道</a><div class="v-desc">主题对话环节,北京大学沈波教授主持下,中科院半导体所研究员赵德刚,中微半导体公司副总裁兼MOCVD产品事业部总经理郭世平,清华大学长聘副教授汪莱,中科院苏州纳米所研究员孙钱,南京大学教授陈鹏,中科院长春光机所研究员孙晓娟,南京大学教授陆海,江南大学教授敖金平,中国科学技术大学微电子学院执行院长、教授龙世兵,浙江大学研究员、电力电子技术研究所副所长杨树,中科院微电子研究所研究员黄森等学界、业界中青代骨干</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1239</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-08 15:57</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/08/557408.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="圆桌对话:MOCVD外延技术和装备面临的挑战和发展趋势" src="https://vod.jizhi.top/snapshot/ff986680df5771edbfdd6732b68e010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">圆桌对话:MOCVD外延技术和装备面临的挑战和发展趋势</p><p class="num"><span class="play"><i class="icon"></i>1252</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/08/557408.html" target="_blank" title="圆桌对话:MOCVD外延技术和装备面临的挑战和发展趋势" class="title">圆桌对话:MOCVD外延技术和装备面临的挑战和发展趋势</a><div class="v-desc">主题对话环节,北京大学沈波教授主持下,中科院半导体所研究员赵德刚,中微半导体公司副总裁兼MOCVD产品事业部总经理郭世平,清华大学长聘副教授汪莱,中科院苏州纳米所研究员孙钱,南京大学教授陈鹏,中科院长春光机所研究员孙晓娟,南京大学教授陆海,江南大学教授敖金平,中国科学技术大学微电子学院执行院长、教授龙世兵,浙江大学研究员、电力电子技术研究所副所长杨树,中科院微电子研究所研究员黄森等学界、业界中青代骨干</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1252</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-08 15:55</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/02/557413.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="中国科学技术大学谭鹏举: 零回滞氧化镓光电晶体管 从光电导效应到光栅效应" src="https://vod.jizhi.top/snapshot/015cf9e0df5871edbfe90674a2ce010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">中国科学技术大学谭鹏举: 零回滞氧化镓光电晶体管 从光电导效应到光栅效应</p><p class="num"><span class="play"><i class="icon"></i>784</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/02/557413.html" target="_blank" title="中国科学技术大学谭鹏举: 零回滞氧化镓光电晶体管 从光电导效应到光栅效应" class="title">中国科学技术大学谭鹏举: 零回滞氧化镓光电晶体管 从光电导效应到光栅效应</a><div class="v-desc">零回滞氧化镓光电晶体管 从光电导效应到光栅效应谭鹏举,邹燕妮,赵晓龙*,侯小虎,张中方,丁梦璠,于舜杰,马晓兰,徐光伟,胡芹*,龙世兵中国科学技术大学</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>784</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-02 16:03</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/02/557412.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="南京大学叶建东:氧化镓基双极型异质结功率器件研究" src="https://vod.jizhi.top/snapshot/00cffc20df5871ed834e6633b79f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">南京大学叶建东:氧化镓基双极型异质结功率器件研究</p><p class="num"><span class="play"><i class="icon"></i>707</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/02/557412.html" target="_blank" title="南京大学叶建东:氧化镓基双极型异质结功率器件研究" class="title">南京大学叶建东:氧化镓基双极型异质结功率器件研究</a><div class="v-desc">氧化镓基双极型异质结功率器件研究叶建东*,巩贺贺,周峰,郁鑫鑫,徐尉宗,任芳芳,顾书林,陆海,张荣,郑有炓南京大学</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>707</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-02 16:02</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/02/557411.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="陕西科技大学马淑芳:基于单根Ga2O3纳米线的深紫外光电探测性能" src="https://vod.jizhi.top/snapshot/00d8fcd0df5871edbd9f6733a68f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">陕西科技大学马淑芳:基于单根Ga2O3纳米线的深紫外光电探测性能</p><p class="num"><span class="play"><i class="icon"></i>673</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/02/557411.html" target="_blank" title="陕西科技大学马淑芳:基于单根Ga2O3纳米线的深紫外光电探测性能" class="title">陕西科技大学马淑芳:基于单根Ga2O3纳米线的深紫外光电探测性能</a><div class="v-desc">基于单根Ga2O3纳米线的深紫外光电探测性能马淑芳*,刘松,韩斌,尉国栋,董浩琰,牛艳萍,郝晓东,许并社陕西科技大学</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>673</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-02 16:01</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/02/557410.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="中国科学技术大学龙世兵:氧化镓半导体器件" src="https://vod.jizhi.top/snapshot/0034a680df5871eda47e6733a78e010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">中国科学技术大学龙世兵:氧化镓半导体器件</p><p class="num"><span class="play"><i class="icon"></i>868</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/02/557410.html" target="_blank" title="中国科学技术大学龙世兵:氧化镓半导体器件" class="title">中国科学技术大学龙世兵:氧化镓半导体器件</a><div class="v-desc">氧化镓半导体器件龙世兵*,徐光伟,赵晓龙,侯小虎中国科学技术大学</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>868</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-02 15:59</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/01/557423.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="湖北大学陈兴驰:基于n-ZnO/n-Ga2O3/p-GaN异质结与pn结耦合增强型自驱动紫外探测器研究" src="https://vod.jizhi.top/snapshot/0474e840df5871edbff50764a3fc010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">湖北大学陈兴驰:基于n-ZnO/n-Ga2O3/p-GaN异质结与pn结耦合增强型自驱动紫外探测器研究</p><p class="num"><span class="play"><i class="icon"></i>750</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/01/557423.html" target="_blank" title="湖北大学陈兴驰:基于n-ZnO/n-Ga2O3/p-GaN异质结与pn结耦合增强型自驱动紫外探测器研究" class="title">湖北大学陈兴驰:基于n-ZnO/n-Ga2O3/p-GaN异质结与pn结耦合增强型自驱动紫外探测器研究</a><div class="v-desc">基于n-ZnO/n-Ga2O3/p-GaN异质结与pn结耦合增强型自驱动紫外探测器研究陈兴驰,陈剑,樊启贤,毛佳兴,张忠辉,许雅俊,卢寅梅,何云斌*湖北大学</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>750</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-01 16:22</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/01/557422.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="吉林大学焦腾:n型Ga2O3薄膜的MOCVD同质外延" src="https://vod.jizhi.top/snapshot/03ca2950df5871ed834e6633b79f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">吉林大学焦腾:n型Ga2O3薄膜的MOCVD同质外延</p><p class="num"><span class="play"><i class="icon"></i>657</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/01/557422.html" target="_blank" title="吉林大学焦腾:n型Ga2O3薄膜的MOCVD同质外延" class="title">吉林大学焦腾:n型Ga2O3薄膜的MOCVD同质外延</a><div class="v-desc">n型Ga2O3薄膜的MOCVD同质外延焦腾,陈威,李政达,刁肇悌,党新明,陈沛然,董鑫*吉林大学</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>657</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-01 16:21</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/01/557421.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="南京大学汪正鹏:NiO/β-Ga2O3 p+-n异质结二极管深能级缺陷研究" src="https://vod.jizhi.top/snapshot/03ca7770df5871ed834e6633b79f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">南京大学汪正鹏:NiO/β-Ga2O3 p+-n异质结二极管深能级缺陷研究</p><p class="num"><span class="play"><i class="icon"></i>633</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202209/01/557421.html" target="_blank" title="南京大学汪正鹏:NiO/β-Ga2O3 p+-n异质结二极管深能级缺陷研究" class="title">南京大学汪正鹏:NiO/β-Ga2O3 p+-n异质结二极管深能级缺陷研究</a><div class="v-desc">NiO/-Ga2O3p+-n异质结二极管深能级缺陷研究汪正鹏,巩贺贺,郁鑫鑫,叶建东*,顾书林,任芳芳,张荣,郑有炓南京大学</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>633</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2022-09-01 16:20</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202209/01/557420.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="大连理工大学张赫之: 两步法在蓝宝石衬底上生长高质量β-Ga2O3厚膜的研究" src="https://vod.jizhi.top/snapshot/03311da0df5871ed80190764a0ec010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div 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