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style="padding-right:1em">来源：半导体产业网</span><span id="hits">阅读：431</span> </div> <div class="introduce">核心提示：近日，第八届国际第三代半导体论坛（IFWS）第十九届中国国际半导体照明论坛（SSLCHINA）于苏州胜利召开。本届论坛是在国家科学技</div><div id="content"><div class="content" id="article"><p> 近日，在第八届国际第三代半导体论坛（IFWS）&第十九届中国国际半导体照明论坛（SSLCHINA）上，”氮化镓功率电子器件技术“分论坛如期召开。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/190129851.jpg" alt="孙钱" width="668" height="445" /></p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/183821721.jpg" alt="氮化镓器件现场 (1)" width="668" height="445" /></p> <p style="text-align: center;">论坛现场</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/190157961.jpg" alt="孙钱2" width="668" height="445" /></p> <p style="text-align: center;"><span style="text-align: start;">主持人：中国科学院苏州纳米技术与纳米仿生研究所研究员孙钱</span></p> <p>该论坛由英诺赛科科技有限公司、苏州能讯高能半导体有限公司、南京芯干线科技有限公司协办支持。现场在中国科学院苏州纳米技术与纳米仿生研究所研究员孙钱主持下，有<span style="text-indent: 2em;">瑞士洛桑联邦理工学院教授Elison MATIOLI，南京邮电大学刘建华</span><span style="text-indent: 2em;">，南方科技大学深港微电子学院院长、教授于洪宇，加拿大滑铁卢大学副教授LAN WEI，润新微电子（大连）有限公司副总经理王荣华，美国弗吉尼亚理工大学助理教授张宇昊，电子科技大学陈匡黎，中国科学院北京纳米能源与系统研究所研究员胡卫国，中国科学院苏州纳米技术与纳米仿生研究所助理研究员钟耀宗，中国科学院宁波材料技术与工程研究所戴贻钧，西交利物浦大学朱昱豪等精英专家们先后带来精彩报告，分享了前沿研究成果。</span></p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/183751881.jpg" alt="氮化镓报告1" width="668" height="445" /></p> <p style="text-align: center;">瑞士洛桑联邦理工学院教授Elison MATIOLI做了题为“New technologies for efficient and integrated GaN power devices”的线上主题报告。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202302/17/172821661.jpg" alt="郭宇峰替讲人" width="600" height="400" /></p> <p>南京邮电大学刘建华做了题为“氮化镓功率器件耐压理论与电场均匀化技术研究“的主题报告，介绍了相关研究成果，研究基于等效电势法/等效浓度法，实现氮化镓功率器件建模的简化与降维，建立全解析AlGaN/GaN HEMT耐压模型；提出氮化镓功率器件的优化判据；基于机器学习的功率器件建模新思路；基于高斯盒方法指导电场均匀化技术的研发，提出阶梯沟道掺杂AlGaN/GaN HEMT, 自适应宽度漂移区AlGaN/GaN HEMT。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/190355391.jpg" alt="氮化镓211" width="668" height="427" /></p> <p style="text-align: center;">论坛现场</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202302/17/172841101.jpg" alt="于洪宇" width="600" height="400" /></p> <p>当前，以GaN和SiC为代表的国际第三代半导体产业，受政策、资本、技术、市场的“四轮驱动”已经实现了从研发到规模性量产的成功跨越，进入了产业化快速发展阶段。GaN功率器件朝高功率密度、高频、高集成化方向发展，目前GaN功率器件最重要的市场是移动电子设备的快速充电器，其他市场应用，如汽车工业市场，也在发展趋势之中。南方科技大学深港微电子学院院长、教授于洪宇做了题为“Si基GaN器件及系统研究与产业前景”的主题报告，详细介绍了硅基氮化镓器件、功率和射频系统应用、氮化镓气体传感器的最新研究进展。其中，报告指出，基于GaN HEMT结构，实现多种高灵敏度气体传感器，可在高温环境中探测CO, H2S, H2等气体及颗粒物。采用Pt栅极可实现对H2S, H2等气体实现低功耗、高灵敏度的快速检测；采用TiO2栅极实现超低浓度10-ppb级别的CO检测，500-ppb测试下可实现4s的快速响应；采用无栅金属结构，利用GaN本身的材料特性可实现柴油烟尘颗粒检测，其中器件测试后可通过600℃热氧化处理再生，且传感性能无变化，证明GaN传感器具有高温热稳定性和恶劣环境下的工作能力。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/183942241.jpg" width="668" height="389" alt="" /></p> <p style="text-align: left;">加拿大滑铁卢大学副教授LAN WEI带来了题为“Recent Progress of the MIT Virtual-Source GaN HEMT (MVSG) Compact Model”的线上主题报告。报告介绍了GaN HEMT和MVSG发展历史，介绍了MVSG模型的研究、MVSG案例及相关参数进展。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202303/01/174341841.jpg" alt="王荣华" width="668" height="445" /></p> <p style="text-align: left;">润新微电子（大连）有限公司副总经理王荣华做了题为“后快充时代的氮化镓功率器件产业化”的主题报告。报告首先介绍了GaN功率器件产业发展现状，分享了对后快充时代GaN功率器件产业发展思考建议，并分享了后快充时代对GaN功率器件产业链从外延-器件-可靠性-应用端提出的新要求。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202303/01/175552281.jpg" alt="张宇昊" width="668" height="445" /></p> <p style="text-align: center;">美国弗吉尼亚理工大学助理教授张宇昊带来了题为“中高压（1-10kV）氮化镓功率器件新进展”的主题报告。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202302/17/172919671.jpg" alt="周琦（学生代讲）" width="600" height="400" /></p> <p>氮化镓功率半导体在可再生能源储备、数据中心等领域拥有巨大的应用前景，硅基氮化镓功率器件方面，国际上材料、器件、驱动、电源模块已批量应用，国内材料、器件、驱动及电源模块实现批量生产，与世界先进水平差距较小。电子科技大学陈匡黎带来了题为“p-GaN Gate HEMT器件阈值稳定性及其机理”的主题报告，介绍了p-GaN gate HEMT的自热效应及其可靠性、p-GaN gate HEMT 在短路应力下的可靠性的研究进展及成果。研究指出，材料、工艺、器件结构的差异化带来p-GaN Gate功率器件的SC可靠性各异性很强，对可靠性加固带来挑战。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202302/17/162443731.jpg" alt="胡卫国1" width="600" height="400" /></p> <p>中国科学院北京纳米能源与系统研究所研究员胡卫国做了题为”压电能带工程和柔性AlGaN/GaN HEMT“的主题报告，分享了相关研究进展成果，研究发展AlGaN/GaN HEMT的理论模型, 计算非平面微纳HEMT器件在3D内外复合应变场中的载流子输运特性。实现将HEMT器件阵列(10 × 12 HEMTs)低损转移至柔性衬底。开发HZO新型钝化层，有效抑制电流坍塌。研制微悬臂HEMT。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202302/17/162457771.jpg" alt="钟耀宗" width="600" height="400" /></p> <p>中国科学院苏州纳米技术与纳米仿生研究所助理研究员钟耀宗做了题为”功率HEMT中P-GaN栅的可靠性及其加固技术“的主题报告，介绍了具有p-GaN栅极的E型HEMT、闸门退化机制、加固技术的研究进展。报告指出，p-GaN栅的可靠性是p-GaN E-HEMT应用中的关键问题。能带结构和缺陷影响载流子行为，导致器件性能的静态和动态不稳定性。可以从内因和外因两个方面发展p-GaN栅极可靠性的增强技术。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/180017171.jpg" alt="戴贻钧" width="668" height="445" /></p> <p>中国科学院宁波材料技术与工程研究所戴贻钧做了题为”基于极性调控机制的GaN晶体管无损隔离特性的研究“的主题报告，介绍了极化隔离特性的结构设计、极化隔离在GaN HEMT中的应用、极化隔离在GaN SBD 中的应用等相关研究成果。理论依据方面，研究建立GaN 体系极化隔离结构的物理模型（三维能带图），阐明其结构的主导漏电机制以及优化方案（优化缓冲层漏电）。器件应用方面，极化隔离GaN HEMT两端击穿电压提高到2628V；三端器件开关比109，SS 61mV/dec在GaN SBD领域制备高质量的侧壁结构，器件反偏漏电降低两个数量级。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/01/180141881.jpg" alt="朱昱豪" width="668" height="445" /></p> <p>西交利物浦大学朱昱豪做了题为”单片集成GaN基DC-DC转换器“的主题报告，介绍了用于功率转换系统的单片GaN IC路线图，GaN器件的制备与特性，GaN基逻辑电路，控制比较器和锯齿波发生器，保护温度传感器等研究进展成果。</p> <p> </p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=11032');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=11032"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" 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