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b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2023-05-22 15:27</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202305/22/557399.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="西安电子科技大学王鹏飞;双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究" src="https://vod.jizhi.top/snapshot/701db9c0f40a71edbffa0764a3fc010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">西安电子科技大学王鹏飞;双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究</p><p class="num"><span class="play"><i class="icon"></i>950</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557399.html" target="_blank" title="西安电子科技大学王鹏飞;双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究" class="title">西安电子科技大学王鹏飞;双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究</a><div class="v-desc">双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鹏飞西安电子科技大学Wang PengfeiXidian University</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>950</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2023-05-22 15:22</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202305/22/557398.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="昂瑞微电子副总经理黄鑫:国产突破,中国射频前端产业引领5G 芯时代" src="https://vod.jizhi.top/snapshot/d4426470f40871edbfbe0764a0ec010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">昂瑞微电子副总经理黄鑫:国产突破,中国射频前端产业引领5G 芯时代</p><p class="num"><span class="play"><i class="icon"></i>1025</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557398.html" target="_blank" title="昂瑞微电子副总经理黄鑫:国产突破,中国射频前端产业引领5G 芯时代" class="title">昂瑞微电子副总经理黄鑫:国产突破,中国射频前端产业引领5G 芯时代</a><div class="v-desc">国产突破,中国射频前端产业引领5G 芯时代Domestic breakthrough, China's RF front-end industry leads the 5G Chip era黄鑫北京昂瑞微电子技术股份有限公司副总经理HUANG XinVice General Manager of Beijing OnMicro Electronics Co., Ltd.</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1025</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2023-05-22 15:21</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202305/22/557397.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="山东大学新一代半导体材料研究院研究员崔鹏:电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs" src="https://vod.jizhi.top/snapshot/318922a0f40871edb0346732b68f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">山东大学新一代半导体材料研究院研究员崔鹏:电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs</p><p class="num"><span class="play"><i class="icon"></i>1086</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557397.html" target="_blank" title="山东大学新一代半导体材料研究院研究员崔鹏:电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs" class="title">山东大学新一代半导体材料研究院研究员崔鹏:电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs</a><div class="v-desc">电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1086</span></span><span class="v-info-i"><i title="评论" class="b-icon 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class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557396.html" target="_blank" title="中国电科十三所正高级工程师杜鹏搏:47GHz-52GHz功率放大器芯片套片设计" class="title">中国电科十三所正高级工程师杜鹏搏:47GHz-52GHz功率放大器芯片套片设计</a><div class="v-desc">47GHz-52GHz功率放大器芯片套片设计Design of 47GHz-52GHz Power Amplifier Chipset 杜鹏搏中国电科十三所正高级工程师、河北新华北集成电路有限公司副总经理DUPengboSenior Engineer of Hebei Semiconductor Institute, Deputy General Manager of Hebei New North China Integrated Circuit Co., Ltd</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>984</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2023-05-22 15:19</span></div></div></div></li> <li><div class="l-item"><div 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class="danmu-module"></div><span class="dur"></span></div><p class="t">能讯高能半导体副总裁裴轶:氮化镓推动5G、射频能源及其他领域的创新</p><p class="num"><span class="play"><i class="icon"></i>1066</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557394.html" target="_blank" title="能讯高能半导体副总裁裴轶:氮化镓推动5G、射频能源及其他领域的创新" class="title">能讯高能半导体副总裁裴轶:氮化镓推动5G、射频能源及其他领域的创新</a><div class="v-desc">氮化镓推动5G、射频能源及其他领域的创新GaN Driving innovation in 5G, RF Energy and beyond裴轶苏州能讯高能半导体有限公司副总裁PEI YiVice President of Dynax Semiconductor, Inc</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1066</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" 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class="danmu-module"></div><span class="dur"></span></div><p class="t">国博电子副总经理钱峰:5G移动通信用化合物器件研究</p><p class="num"><span class="play"><i class="icon"></i>894</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557392.html" target="_blank" title="国博电子副总经理钱峰:5G移动通信用化合物器件研究" class="title">国博电子副总经理钱峰:5G移动通信用化合物器件研究</a><div class="v-desc">5G移动通信用化合物器件研究Research on Compound Semiconductor Devices for 5G Mobile Communication钱峰南京国博电子股份有限公司副总经理QIAN FengDeputy General Manager of Nanjing Guobo Electronics Co., Ltd</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>894</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2023-05-22 15:15</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202305/22/557391.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="澳大利亚麦考瑞大学教授Sourabh KHANDELWAL:Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM" src="https://vod.jizhi.top/snapshot/672bfee0f3ff71edba9c6633b79f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">澳大利亚麦考瑞大学教授Sourabh KHANDELWAL:Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM</p><p class="num"><span class="play"><i class="icon"></i>779</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557391.html" target="_blank" title="澳大利亚麦考瑞大学教授Sourabh KHANDELWAL:Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM" class="title">澳大利亚麦考瑞大学教授Sourabh KHANDELWAL:Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM</a><div class="v-desc">Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亚麦考瑞大学教授Sourabh KHANDELWALProfessor of Macquarie University, Australia</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>779</span></span><span class="v-info-i"><i title="评论" class="b-icon b-icon-v-dm"></i><span>0</span></span><span class="v-info-i"><i title="收藏" class="b-icon b-icon-v-fav"></i><span>0</span></span></div><div class="up-info"><a href="" target="_blank" class="v-author">guansheng</a><span title="日期" class="v-date">2023-05-22 15:14</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a 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