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class="content" id="article"><strong> 面向快充、下一代电动汽车和飞行器等更高输出功率和低损耗的能源系统</strong> <div> </div> <div>作为NEDO“战略节能技术创新计划”中的重要成员，Novel Crystal Technology Co., Ltd.致力于“β-Ga2O3肖特基势垒二极管商业化开发”，近日宣布Novel已开发出沟槽型安培级1200 V 耐压“氧化镓肖特基势垒二极管(SBD)”，这一成就是划时代的。</div> <div style="text-align: center;"><img src="http://www.casmita.com/file/upload/202112/27/182634251.jpg" width="532" height="407" alt="" /></div> <div style="text-align: center;">图1在2英寸晶圆上制造的安培级1200 V耐压氧化镓肖特基势垒二极管的外观照片</div> <div> </div> <div>这一工作成果将极大地推动高耐压氧化镓SBD的商业化进程，从而进一步有效提高（超）宽禁带电力电子器件的性价比。该氧化镓SBD的应用将有效推动如光伏发电用功率转换器、工业用逆变器和电源等电力电子设备的进一步高效和小型化。有望为汽车以及空中飞行器的电气化推进做出贡献。相关研究成果详见发表于日本应用物理学会2021年12月15日的网络版《Applied Physics Express》期刊。</div> <div> </div> <div>由于氧化镓（β-Ga2O3）材料※1相较碳化硅（SiC）※2和氮化镓（GaN）材料※3更优越的材料性能和更低的制造成本，基于氧化镓材料的功率器件有望成为家用电器、电动汽车、轨道交通、工业设备、太阳能发电、风力发电等各种低损耗、低成本、高功率密度的电力电子应用场景的的理想候选※4。围绕氧化镓材料生长、器件设计、电力系统应用的研究正在世界范围内的公司和研究机构的研究中加速展开。</div> <div> </div> <div>作为新能源和产业技术综合发开机构（NEDO）“战略节能技术创新计划”的重要成员，Novel Crystal Technology, Inc.于2017年启动β-Ga2O3器件商业化项目，利用NCT的在该领域深厚的研究基础和工艺积累，我们成功开发了2英寸晶圆的沟槽型※5β-Ga2O3SBD※6的生产工艺，并首次成功开发了沟槽型大电流1200V耐压的β-Ga2O3SBD（见图1）。未来，预计基于该开发成果的高压大电流β-Ga2O3SBD将有望应用于下一代高压、大功率的电力电子应用场景。</div> <div> </div> <div>Novel的这些成果源自Novel的母公司-田村制作所和一系列NEDO的项目支持。田村制作所基于2011-2013年NEDO“节能创新技术开发项目/超高压氧化镓功率器件的研发”的部分项目成果，于2015年成功研发出全球首个功率器件用β-Ga2O3外延技术。2018年，Novel获NEDO“战略节能技术创新计划/安培级氧化镓器件”资助项目，开启了功率器件用大电流β-Ga2O3SBD的商业化开发进程；2020年，Novel再作为主要参与者之一，获得NEDO“战略节能技术创新计划/β-Ga2O3SBD器件商业化”项目资助。相关研究成果详见发表于日本应用物理学会2021年12月15日的网络版《Applied Physics Express》期刊。</div> <div> </div> <div><strong>【本次成果】</strong><br /> <br /> 迄今为止，对于大电流β-Ga2O3SBD，Planar型※7结构由于较易开发而被广泛采用。但由于PlanarSBD漏电※8大等原因，此结构很难制造出耐压※9 1200V以上的Ga2O3SBD。Novel Crystal TechnologyInc.于2017年成功开发并展示了将反向漏电流降低到1/1000的沟槽型Ga2O3SBD的技术及原型，图2是Novel开发的β-Ga2O3沟槽型SBD的截面结构图和光学显微照片。目前，Novel已实现2英寸Ga2O3SBD的批量生产。本次我们基于Novel2英寸工艺首次展示的沟槽型β-Ga2O3SBD，其正向电流※10IF= 2 A（VF = 2.0 V）（图3a），耐压1200 V时漏电流<10 -9A（图3b）。该工作使得目前基于Novel的100 mm 工艺线的系列产品开发、大规模生产以及1200 V β-Ga2O3SBD 产品级的电器性能和可靠性评估成为可能，从而加快推动高压大电流低损耗的β-Ga2O3功率器件商业化进程。</div> <div style="text-align: center;"><img src="http://www.casmita.com/file/upload/202112/27/182756601.jpg" width="700" height="680" alt="" /></div> <div style="text-align: center;">图2β-Ga2O3沟槽型SBD的横截面结构，光学显微照片<br /> <img src="http://www.casmita.com/file/upload/202112/27/182823881.jpg" width="700" height="284" alt="" /><br /> 图3β-Ga2O3沟槽型SBD的电流-电压<br />  </div> <div><strong>【未来计划】</strong><br /> <br /> 通过NEDO的项目，Novel将加快推动此次试制成功的安培级1200Vβ-Ga2O3SBD器件的制造工艺和可靠性评估的建立，力争于2023年实现相关产品商业化。于此同时，我们也将基于2021年6月推出的高品质Ga2O3100毫米外延片技术，建设100mm高品质β-Ga2O3外延量产线。</div> <div> </div> <div>得益于该技术的突破，中高压高速二极管的市场规模，预计将从2022年的1200亿日元扩大至2030年的1500亿日元（富士经济《2021下一代功率器件和电力电子相关设备市场的现状和未来展望》)。Novel将携β-Ga2O3SBD相关技术进入这一主要市场，为节能社会贡献力量。<br /> <br /> <div><strong>【注释】</strong></div> <div> </div> <div>※1氧化镓（β-Ga2O3）</div> <div> </div> <div>Gallium Oxide 它是镓和氧的化合物，是宽禁带半导体材料之一。</div> <div> </div> <div>※2碳化硅（SiC）</div> <div> </div> <div>Silicon Carbide  它是硅和氧的化合物，是宽禁带半导体材料之一。</div> <div> </div> <div>※3氮化镓（GaN）</div> <div> </div> <div>Gallium Nitride  它是镓和氮的化合物，是宽禁带半导体材料之一。</div> <div> </div> <div>※4功率器件</div> <div> </div> <div>电力控制电路和电源开关电路中必不可少的电子元器件，主要用于电子电力的开关、功率转换、功率放大等电力转换设备。</div> <div> </div> <div>※5沟槽型</div> <div> </div> <div>在阳极电极正下方的Ga2O3中形成凹槽的结构。施加反向电压时，阳极附近的电场强度得到缓和，具有显着降低漏电流的作用。</div> <div> </div> <div>※6肖特基势垒二极管(SBD)</div> <div> </div> <div>一种利用整流的二极管，称为肖特基结，当半导体和金属结合时，其中电流仅沿一个方向流动。</div> <div> </div> <div>肖特基结二极管的优点是开关损耗低于PN 结二极管。</div> <div> </div> <div>※7平面型</div> <div> </div> <div>Ga2O3正下方的阳极电极具有扁平结构。施加反向电压时，阳极附近的电场强度大，漏电流较大。</div> <div> </div> <div>※8漏电流</div> <div> </div> <div>从阴极流向阳极的电流。</div> <div> </div> <div>※9耐压</div> <div> </div> <div>它是指器件阳极向阴极施加正电压的最大电压限制。</div> <div> </div> <div>※10正向电流</div> <div> </div> <div>它是从阳极流向阴极的电流。</div> </div></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=6912');">打赏</div></div><div id="comment" style="display:;"> <div 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