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silicon vias</title> <meta name="description" content="Search results for: through silicon vias"> <meta name="keywords" content="through silicon vias"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="through silicon vias"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 535</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: through silicon vias</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">535</span> Optimal Number and Placement of Vertical Links in 3D Network-On-Chip</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Nesrine%20Toubaline">Nesrine Toubaline</a>, <a href="https://publications.waset.org/abstracts/search?q=Djamel%20Bennouar"> Djamel Bennouar</a>, <a href="https://publications.waset.org/abstracts/search?q=Ali%20Mahdoum"> Ali Mahdoum</a> </p> <p class="card-text"><strong>Abstract:</strong></p> 3D technology can lead to a significant reduction in power and average hop-count in Networks on Chip (NoCs). It offers short and fast vertical links which copes with the long wire problem in 2D NoCs. This work proposes heuristic-based method to optimize number and placement of vertical links to achieve specified performance goals. Experiments show that significant improvement can be achieved by using a specific number of vertical interconnect. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=interconnect%20optimization" title="interconnect optimization">interconnect optimization</a>, <a href="https://publications.waset.org/abstracts/search?q=monolithic%20inter-tier%20vias" title=" monolithic inter-tier vias"> monolithic inter-tier vias</a>, <a href="https://publications.waset.org/abstracts/search?q=network%20on%20chip" title=" network on chip"> network on chip</a>, <a href="https://publications.waset.org/abstracts/search?q=system%20on%20chip" title=" system on chip"> system on chip</a>, <a href="https://publications.waset.org/abstracts/search?q=through%20silicon%20vias" title=" through silicon vias"> through silicon vias</a>, <a href="https://publications.waset.org/abstracts/search?q=three%20dimensional%20integration%20circuits" title=" three dimensional integration circuits"> three dimensional integration circuits</a> </p> <a href="https://publications.waset.org/abstracts/60164/optimal-number-and-placement-of-vertical-links-in-3d-network-on-chip" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/60164.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">303</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">534</span> Investigation of Amorphous Silicon A-Si Thin Films Deposited on Silicon Substrate by Raman Spectroscopy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Amirouche%20Hammouda">Amirouche Hammouda</a>, <a href="https://publications.waset.org/abstracts/search?q=Nacer%20Boucherou"> Nacer Boucherou</a>, <a href="https://publications.waset.org/abstracts/search?q=Aicha%20Ziouche"> Aicha Ziouche</a>, <a href="https://publications.waset.org/abstracts/search?q=Hayet%20Boudjellal"> Hayet Boudjellal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Silicon has excellent physical and electrical properties for optoelectronics industry. It is a promising material with many advantages. On Raman characterization of thin films deposited on crystalline silicon substrate, the signal Raman of amorphous silicon is often disturbed by the Raman signal of the crystalline silicon substrate. In this paper, we propose to characterize thin layers of amorphous silicon deposited on crystalline silicon substrates. The results obtained have shown the possibility to bring out the Raman spectrum of deposited layers by optimizing experimental parameters. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=raman%20scattering" title="raman scattering">raman scattering</a>, <a href="https://publications.waset.org/abstracts/search?q=amorphous%20silicon" title=" amorphous silicon"> amorphous silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=crystalline%20silicon" title=" crystalline silicon"> crystalline silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20films" title=" thin films"> thin films</a> </p> <a href="https://publications.waset.org/abstracts/175813/investigation-of-amorphous-silicon-a-si-thin-films-deposited-on-silicon-substrate-by-raman-spectroscopy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/175813.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">73</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">533</span> Control of Oxide and Silicon Loss during Exposure of Silicon Waveguide</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Gu%20Zhonghua">Gu Zhonghua</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Control method of bulk silicon dioxide etching process to approach then expose silicon waveguide has been developed. It has been demonstrated by silicon waveguide of photonics devices. It is also able to generalize other applications. Use plasma dry etching to etch bulk silicon dioxide and approach oxide-silicon interface accurately, then use dilute HF wet etching to etch silicon dioxide residue layer to expose the silicon waveguide as soft landing. Plasma dry etch macro loading effect and endpoint technology was used to determine dry etch time accurately with a low wafer expose ratio. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=waveguide" title="waveguide">waveguide</a>, <a href="https://publications.waset.org/abstracts/search?q=etch" title=" etch"> etch</a>, <a href="https://publications.waset.org/abstracts/search?q=control" title=" control"> control</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20loss" title=" silicon loss"> silicon loss</a> </p> <a href="https://publications.waset.org/abstracts/34993/control-of-oxide-and-silicon-loss-during-exposure-of-silicon-waveguide" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34993.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">414</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">532</span> Electrotechnology for Silicon Refining: Plasma Generator and Arc Furnace Installations and Theoretical Base</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ashot%20Navasardian">Ashot Navasardian</a>, <a href="https://publications.waset.org/abstracts/search?q=Mariam%20Vardanian"> Mariam Vardanian</a>, <a href="https://publications.waset.org/abstracts/search?q=Vladik%20Vardanian"> Vladik Vardanian</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=metallurgical%20grade%20silicon" title="metallurgical grade silicon">metallurgical grade silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20grade%20silicon" title=" solar grade silicon"> solar grade silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=impurity" title=" impurity"> impurity</a>, <a href="https://publications.waset.org/abstracts/search?q=refining" title=" refining"> refining</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma" title=" plasma"> plasma</a> </p> <a href="https://publications.waset.org/abstracts/21380/electrotechnology-for-silicon-refining-plasma-generator-and-arc-furnace-installations-and-theoretical-base" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/21380.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">496</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">531</span> Design and Comparative Analysis of Grid-Connected Bipv System with Monocrystalline Silicon and Polycrystalline Silicon in Kandahar Climate</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ahmad%20Shah%20Irshad">Ahmad Shah Irshad</a>, <a href="https://publications.waset.org/abstracts/search?q=Naqibullah%20Kargar"> Naqibullah Kargar</a>, <a href="https://publications.waset.org/abstracts/search?q=Wais%20Samadi"> Wais Samadi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Building an integrated photovoltaic (BIPV) system is a new and modern technique for solar energy production in Kandahar. Due to its location, Kandahar has abundant sources of solar energy. People use both monocrystalline and polycrystalline silicon solar PV modules for the grid-connected solar PV system, and they don’t know which technology performs better for the BIPV system. This paper analyses the parameters described by IEC61724, “Photovoltaic System Performance Monitoring Guidelines for Measurement, Data Exchange and Analysis,” to evaluate which technology shows better performance for the BIPV system. The monocrystalline silicon BIPV system has a 3.1% higher array yield than the polycrystalline silicon BIPV system. The final yield is 0.2%, somewhat higher for monocrystalline silicon than polycrystalline silicon. Monocrystalline silicon has 0.2% and 4.5% greater yearly yield factor and capacity factors than polycrystalline silicon, respectively. Monocrystalline silicon shows 0.3% better performance than polycrystalline silicon. With 1.7% reduction and 0.4% addition in collection losses and useful energy produced, respectively, monocrystalline silicon solar PV system shows good performance than polycrystalline silicon solar PV system. But system losses are the same for both technologies. The monocrystalline silicon BIPV system injects 0.2% more energy into the grid than the polycrystalline silicon BIPV system. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=photovoltaic%20technologies" title="photovoltaic technologies">photovoltaic technologies</a>, <a href="https://publications.waset.org/abstracts/search?q=performance%20analysis" title=" performance analysis"> performance analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20energy" title=" solar energy"> solar energy</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20irradiance" title=" solar irradiance"> solar irradiance</a>, <a href="https://publications.waset.org/abstracts/search?q=performance%20ratio" title=" performance ratio"> performance ratio</a> </p> <a href="https://publications.waset.org/abstracts/157747/design-and-comparative-analysis-of-grid-connected-bipv-system-with-monocrystalline-silicon-and-polycrystalline-silicon-in-kandahar-climate" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/157747.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">371</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">530</span> Humidity Sensing Behavior of Graphene Oxide on Porous Silicon Substrate</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Amirhossein%20Hasani">Amirhossein Hasani</a>, <a href="https://publications.waset.org/abstracts/search?q=Shamin%20Houshmand%20Sharifi"> Shamin Houshmand Sharifi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, we investigate humidity sensing behavior of the graphene oxide with porous silicon substrate. By evaporation method, aluminum interdigital electrodes have been deposited onto porous silicon substrate. Then, by drop-casting method graphene oxide solution was deposited onto electrodes. The porous silicon was formed by electrochemical etching. The experimental results showed that using porous silicon substrate, we obtained two times larger sensitivity and response time compared with the results obtained with silicon substrate without porosity. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=graphene%20oxide" title="graphene oxide">graphene oxide</a>, <a href="https://publications.waset.org/abstracts/search?q=porous%20silicon" title=" porous silicon"> porous silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=humidity%20sensor" title=" humidity sensor"> humidity sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=electrochemical" title=" electrochemical"> electrochemical</a> </p> <a href="https://publications.waset.org/abstracts/13093/humidity-sensing-behavior-of-graphene-oxide-on-porous-silicon-substrate" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/13093.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">605</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">529</span> Metal-Organic Chemical Vapor Deposition (MOCVD) Process Investigation for Co Thin Film as a TSV Alternative Seed Layer</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sajjad%20Esmaeili">Sajjad Esmaeili</a>, <a href="https://publications.waset.org/abstracts/search?q=Robert%20Krause"> Robert Krause</a>, <a href="https://publications.waset.org/abstracts/search?q=Lukas%20Gerlich"> Lukas Gerlich</a>, <a href="https://publications.waset.org/abstracts/search?q=Alireza%20Mohammadian%20Kia"> Alireza Mohammadian Kia</a>, <a href="https://publications.waset.org/abstracts/search?q=Benjamin%20Uhlig"> Benjamin Uhlig</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This investigation aims to develop the feasible and qualitative process parameters for the thin films fabrication into ultra-large through-silicon-vias (TSVs) as vertical interconnections. The focus of the study is on TSV metallization and its challenges employing new materials for the purpose of rapid signal propagation in the microsystems technology. Cobalt metal-organic chemical vapor deposition (Co-MOCVD) process enables manufacturing an adhesive and excellent conformal ultra-thin film all the way through TSVs in comparison with the conventional non-conformal physical vapor deposition (PVD) process of copper (Cu) seed layer. Therefore, this process provides a Cu seed-free layer which is capable of direct Cu electrochemical deposition (Cu-ECD) on top of it. The main challenge of this metallization module is to achieve the proper alternative seed layer with less roughness, sheet resistance and granular organic contamination (e.g. carbon) which intensify the Co corrosion under the influence of Cu electrolyte. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Cobalt%20MOCVD" title="Cobalt MOCVD">Cobalt MOCVD</a>, <a href="https://publications.waset.org/abstracts/search?q=direct%20Cu%20electrochemical%20deposition%20%28ECD%29" title=" direct Cu electrochemical deposition (ECD)"> direct Cu electrochemical deposition (ECD)</a>, <a href="https://publications.waset.org/abstracts/search?q=metallization%20technology" title=" metallization technology"> metallization technology</a>, <a href="https://publications.waset.org/abstracts/search?q=through-silicon-via%20%28TSV%29" title=" through-silicon-via (TSV)"> through-silicon-via (TSV)</a> </p> <a href="https://publications.waset.org/abstracts/96811/metal-organic-chemical-vapor-deposition-mocvd-process-investigation-for-co-thin-film-as-a-tsv-alternative-seed-layer" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/96811.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">158</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">528</span> Microstructure Characterization on Silicon Carbide Formation from Natural Wood</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Noor%20Leha%20Abdul%20Rahman">Noor Leha Abdul Rahman</a>, <a href="https://publications.waset.org/abstracts/search?q=Koay%20Mei%20Hyie"> Koay Mei Hyie</a>, <a href="https://publications.waset.org/abstracts/search?q=Anizah%20Kalam"> Anizah Kalam</a>, <a href="https://publications.waset.org/abstracts/search?q=Husna%20Elias"> Husna Elias</a>, <a href="https://publications.waset.org/abstracts/search?q=Teng%20Wang%20Dung"> Teng Wang Dung</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Dark Red Meranti and Kapur, kinds of important type of wood in Malaysia were used as a precursor to fabricate porous silicon carbide. A carbon template is produced by pyrolysis at 850°C in an oxygen free atmosphere. The carbon template then further subjected to infiltration with silicon by silicon melt infiltration method. The infiltration process was carried out in tube furnace in argon flow at 1500°C, at two different holding time; 2 hours and 3 hours. Thermo gravimetric analysis was done to investigate the decomposition behavior of two species of plants. The resulting silicon carbide was characterized by XRD which was found the formation of silicon carbide and also excess silicon. The microstructure was characterized by scanning electron microscope (SEM) and the density was determined by the Archimedes method. An increase in holding time during infiltration will increased the density as well as formation of silicon carbide. Dark Red Meranti precursor is likely suitable for production of silicon carbide compared to Kapur. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=density" title="density">density</a>, <a href="https://publications.waset.org/abstracts/search?q=SEM" title=" SEM"> SEM</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20carbide" title=" silicon carbide"> silicon carbide</a>, <a href="https://publications.waset.org/abstracts/search?q=XRD" title=" XRD "> XRD </a> </p> <a href="https://publications.waset.org/abstracts/30071/microstructure-characterization-on-silicon-carbide-formation-from-natural-wood" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30071.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">424</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">527</span> Process for Separating and Recovering Materials from Kerf Slurry Waste </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Tarik%20Ouslimane">Tarik Ouslimane</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdenour%20Lami"> Abdenour Lami</a>, <a href="https://publications.waset.org/abstracts/search?q=Salaheddine%20Aoudj"> Salaheddine Aoudj</a>, <a href="https://publications.waset.org/abstracts/search?q=Mouna%20Hecini"> Mouna Hecini</a>, <a href="https://publications.waset.org/abstracts/search?q=Ouahiba%20Bouchelaghem"> Ouahiba Bouchelaghem</a>, <a href="https://publications.waset.org/abstracts/search?q=Nadjib%20Drouiche"> Nadjib Drouiche</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Slurry waste is a byproduct generated from the slicing process of multi-crystalline silicon ingots. This waste can be used as a secondary resource to recover high purity silicon which has a great economic value. From the management perspective, the ever increasing generation of kerf slurry waste loss leads to significant challenges for the photovoltaic industry due to the current low use of slurry waste for silicon recovery. Slurry waste, in most cases, contains silicon, silicon carbide, metal fragments and mineral-oil-based or glycol-based slurry vehicle. As a result, of the global scarcity of high purity silicon supply, the high purity silicon content in slurry has increasingly attracted interest for research. This paper presents a critical overview of the current techniques employed for high purity silicon recovery from kerf slurry waste. Hydrometallurgy is continuously a matter of study and research. However, in this review paper, several new techniques about the process of high purity silicon recovery from slurry waste are introduced. The purpose of the information presented is to improve the development of a clean and effective recovery process of high purity silicon from slurry waste. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kerf-loss" title="Kerf-loss">Kerf-loss</a>, <a href="https://publications.waset.org/abstracts/search?q=slurry%20waste" title=" slurry waste"> slurry waste</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20carbide" title=" silicon carbide"> silicon carbide</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20recovery" title=" silicon recovery"> silicon recovery</a>, <a href="https://publications.waset.org/abstracts/search?q=photovoltaic" title=" photovoltaic"> photovoltaic</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20purity%20silicon" title=" high purity silicon"> high purity silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=polyethylen%20glycol" title=" polyethylen glycol"> polyethylen glycol</a> </p> <a href="https://publications.waset.org/abstracts/46825/process-for-separating-and-recovering-materials-from-kerf-slurry-waste" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/46825.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">310</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">526</span> Monocrystalline Silicon Surface Passivation by Porous Silicon</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Ben%20Rabha">Mohamed Ben Rabha</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we report on the effect of porous silicon (PS) treatment on the surface passivation of monocrystalline silicon (c-Si). PS film with a thickness of 80 nm was deposited by stain etching. It was demonstrated that PS coating is a very interesting solution for surface passivation. The level of surface passivation is determined by techniques based on photoconductance and FTIR. As a results, the effective minority carrier lifetime increase from 2 µs to 7 µs at ∆n=1015 cm-3 and the reflectivity reduce from 28 % to about 7 % after PS coating. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=porous%20silicon" title="porous silicon">porous silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=effective%20minority%20carrier%20lifetime" title=" effective minority carrier lifetime"> effective minority carrier lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=reflectivity" title=" reflectivity"> reflectivity</a> </p> <a href="https://publications.waset.org/abstracts/19746/monocrystalline-silicon-surface-passivation-by-porous-silicon" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19746.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">445</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">525</span> Fabrication of Silicon Solar Cells Using All Sputtering Process </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ching-Hua%20Li">Ching-Hua Li</a>, <a href="https://publications.waset.org/abstracts/search?q=Sheng-Hui%20Chen"> Sheng-Hui Chen</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Sputtering is a popular technique with many advantages for thin film deposition. To fabricate a hydrogenated silicon thin film using sputtering process for solar cell applications, the ion bombardment during sputtering will generate microstructures (voids and columnar structures) to form silicon dihydride bodings as defects. The properties of heterojunction silicon solar cells were studied by using boron grains and silicon-boron targets. Finally, an 11.7% efficiency of solar cell was achieved by using all sputtering process. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=solar%20cell" title="solar cell">solar cell</a>, <a href="https://publications.waset.org/abstracts/search?q=sputtering%20process" title=" sputtering process"> sputtering process</a>, <a href="https://publications.waset.org/abstracts/search?q=pvd" title=" pvd"> pvd</a>, <a href="https://publications.waset.org/abstracts/search?q=alloy%20target" title=" alloy target"> alloy target</a> </p> <a href="https://publications.waset.org/abstracts/30724/fabrication-of-silicon-solar-cells-using-all-sputtering-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30724.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">580</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">524</span> Efficiently Silicon Metasurfaces at Visible Light</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Juntao%20Li">Juntao Li</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The metasurfaces for beam deflecting with gradient silicon posts in the square lattices were fabricated on the thin film crystal silicon with quartz substrate. By using the crystals silicon with high refractive index and high transmission to control the phase over 2π coverage, we demonstrated the polarization independent beam deflecting at wavelength of 532nm with 45% transmission in experiment and 70% in simulation into the desired angle. This simulation efficiency is almost close to the TiO2 metasurfaces but has higher refractive index and lower aspect ratio to reduce fabrication complexity. The result can extend the application of silicon metalsurfaces from 700 nm to 500 nm hence open a new way to use metasurfaces efficiently in visible light regime. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=metasurfaces" title="metasurfaces">metasurfaces</a>, <a href="https://publications.waset.org/abstracts/search?q=crystal%20silicon" title=" crystal silicon"> crystal silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=light%20deflection" title=" light deflection"> light deflection</a>, <a href="https://publications.waset.org/abstracts/search?q=visible%20light" title=" visible light"> visible light</a> </p> <a href="https://publications.waset.org/abstracts/58128/efficiently-silicon-metasurfaces-at-visible-light" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/58128.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">283</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">523</span> The Synergistic Effects of Using Silicon and Selenium on Fruiting of Zaghloul Date Palm (Phoenix dectylifera L.)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20R.%20Gad%20El-%20Kareem">M. R. Gad El- Kareem</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20M.%20K.%20Abdel%20Aal"> A. M. K. Abdel Aal</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Y.%20Mohamed"> A. Y. Mohamed</a> </p> <p class="card-text"><strong>Abstract:</strong></p> During 2011 and 2012 seasons, Zaghloul date palms received four sprays of silicon (Si) at 0.05 to 0.1% and selenium (Se) at 0.01 to 0.02%. Growths, nutritional status, yield as well as physical and chemical characteristics of the fruits in response to application of silicon and selenium were investigated. Single and combined applications of silicon at 0.05 to 0.1% and selenium at 0.01 to 0.02% was very effective in enhancing the leaf area, total chlorophylls, percentages of N, P, and K in the leaves, yield, bunch weight as well as physical and chemical characteristics of the fruits in relative to the check treatment. Silicon was superior to selenium in this respect. Combined application was favourable than using each alone in this connection. Treating Zaghloul date palms four times with a mixture of silicon at 0.05% + selenium at 0.01% resulted in an economical yield and producing better fruit quality. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=date%20palms" title="date palms">date palms</a>, <a href="https://publications.waset.org/abstracts/search?q=Zaghloul" title=" Zaghloul"> Zaghloul</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=selenium" title=" selenium"> selenium</a>, <a href="https://publications.waset.org/abstracts/search?q=leaf%20area" title=" leaf area"> leaf area</a> </p> <a href="https://publications.waset.org/abstracts/6513/the-synergistic-effects-of-using-silicon-and-selenium-on-fruiting-of-zaghloul-date-palm-phoenix-dectylifera-l" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/6513.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">391</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">522</span> Memristive Properties of Nanostructured Porous Silicon</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Madina%20Alimova">Madina Alimova</a>, <a href="https://publications.waset.org/abstracts/search?q=Margulan%20Ibraimov"> Margulan Ibraimov</a>, <a href="https://publications.waset.org/abstracts/search?q=Ayan%20Tileu"> Ayan Tileu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The paper describes methods for obtaining porous structures with the properties of a silicon-based memristor and explains the electrical properties of porous silicon films. Based on the results, there is a positive shift in the current-voltage characteristics (CVC) after each measurement, i.e., electrical properties depend not only on the applied voltage but also on the previous state. After 3 minutes of rest, the film returns to its original state (reset). The method for obtaining a porous silicon nanofilm with the properties of a memristor is simple and does not require additional effort. Based on the measurement results, the typical memristive behavior of the porous silicon nanofilm is analyzed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=porous%20silicon" title="porous silicon">porous silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=current-voltage%20characteristics" title=" current-voltage characteristics"> current-voltage characteristics</a>, <a href="https://publications.waset.org/abstracts/search?q=memristor" title=" memristor"> memristor</a>, <a href="https://publications.waset.org/abstracts/search?q=nanofilms" title=" nanofilms"> nanofilms</a> </p> <a href="https://publications.waset.org/abstracts/147523/memristive-properties-of-nanostructured-porous-silicon" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/147523.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">130</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">521</span> Design of an Electric Arc Furnace for the Production of Metallurgical Grade Silicon</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Barbouche">M. Barbouche</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Hajji"> M. Hajji</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Ezzaouia"> H. Ezzaouia</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This project is a step to manufacture solar grade silicon. It consists in designing an electrical arc furnace in order to produce metallurgical silicon Mg-Si with mutually carbon and high purity of silica. It concerns, first, the development of a functional analysis, a mechanical design and thermodynamic study. Our study covers also, the design of the temperature control system and the design of the electric diagrams. The furnace works correctly. A Labview interface was developed to control all parameters and to supervise the operation of furnace. Characterization tests with X-ray technique and Raman spectroscopy allow us to confirm the metallurgical silicon production. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=arc%20furnace" title="arc furnace">arc furnace</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20design" title=" electrical design"> electrical design</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20manufacturing" title=" silicon manufacturing"> silicon manufacturing</a>, <a href="https://publications.waset.org/abstracts/search?q=regulation" title=" regulation"> regulation</a>, <a href="https://publications.waset.org/abstracts/search?q=x-ray%20characterization" title=" x-ray characterization"> x-ray characterization</a> </p> <a href="https://publications.waset.org/abstracts/13891/design-of-an-electric-arc-furnace-for-the-production-of-metallurgical-grade-silicon" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/13891.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">495</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">520</span> Investigation of Mesoporous Silicon Carbonization Process</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=N.%20I.%20Kargin">N. I. Kargin</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20K.%20Safaraliev"> G. K. Safaraliev</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20S.%20Gusev"> A. S. Gusev</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20O.%20Sultanov"> A. O. Sultanov</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20V.%20Siglovaya"> N. V. Siglovaya</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20M.%20Ryndya"> S. M. Ryndya</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20A.%20Timofeev"> A. A. Timofeev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=silicon%20carbide" title="silicon carbide">silicon carbide</a>, <a href="https://publications.waset.org/abstracts/search?q=porous%20silicon" title=" porous silicon"> porous silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=carbonization" title=" carbonization"> carbonization</a>, <a href="https://publications.waset.org/abstracts/search?q=electrochemical%20etching" title=" electrochemical etching"> electrochemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=diffusion" title=" diffusion"> diffusion</a> </p> <a href="https://publications.waset.org/abstracts/78976/investigation-of-mesoporous-silicon-carbonization-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/78976.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">260</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">519</span> Surface Passivation of Multicrystalline Silicon Solar Cell via Combination of LiBr/Porous Silicon and Grain Boundaies Grooving</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Dimassi%20Wissem">Dimassi Wissem</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, we investigate the effect of combination between the porous silicon (PS) layer passivized with Lithium Bromide (LiBr) and grooving of grain boundaries (GB) in multi crystalline silicon. The grain boundaries were grooved in order to reduce the area of these highly recombining regions. Using optimized conditions, grooved GB's enable deep phosphorus diffusion and deep metallic contacts. We have evaluated the effects of LiBr on the surface properties of porous silicon on the performance of silicon solar cells. The results show a significant improvement of the internal quantum efficiency, which is strongly related to the photo-generated current. We have also shown a reduction of the surface recombination velocity and an improvement of the diffusion length after the LiBr process. As a result, the I–V characteristics under the dark and AM1.5 illumination were improved. It was also observed a reduction of the GB recombination velocity, which was deduced from light-beam-induced-current (LBIC) measurements. Such grooving in multi crystalline silicon enables passivization of GB-related defects. These results are discussed and compared to solar cells based on untreated multi crystalline silicon wafers. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Multicrystalline%20silicon" title="Multicrystalline silicon">Multicrystalline silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=LiBr" title=" LiBr"> LiBr</a>, <a href="https://publications.waset.org/abstracts/search?q=porous%20silicon" title=" porous silicon"> porous silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=passivation" title=" passivation"> passivation</a> </p> <a href="https://publications.waset.org/abstracts/17523/surface-passivation-of-multicrystalline-silicon-solar-cell-via-combination-of-librporous-silicon-and-grain-boundaies-grooving" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/17523.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">396</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">518</span> The Manufacturing of Metallurgical Grade Silicon from Diatomaceous Silica by an Induction Furnace</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shahrazed%20Medeghri">Shahrazed Medeghri</a>, <a href="https://publications.waset.org/abstracts/search?q=Saad%20Hamzaoui"> Saad Hamzaoui</a>, <a href="https://publications.waset.org/abstracts/search?q=Mokhtar%20Zerdali"> Mokhtar Zerdali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The metallurgical grade silicon (MG-Si) is obtained from the reduction of silica (SiO<sub>2</sub>) in an induction furnace or an electric arc furnace. Impurities inherent in reduction process also depend on the quality of the raw material used. Among the applications of the silicon, it is used as a substrate for the photovoltaic conversion of solar energy and this conversion is wider as the purity of the substrate is important. Research is being done where the purpose is looking for new methods of manufacturing and purification of silicon, as well as new materials that can be used as substrates for the photovoltaic conversion of light energy. In this research, the technique of production of silicon in an induction furnace, using a high vacuum for fusion. Diatomaceous Silica (SiO2) used is 99 mass% initial purities, the carbon used is 6N of purity and the particle size of 63μm as starting materials. The final achieved purity of the material was above 50% by mass. These results demonstrate that this method is a technically reliable, and allows obtaining a better return on the amount 50% of silicon. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=induction%20furnaces" title="induction furnaces">induction furnaces</a>, <a href="https://publications.waset.org/abstracts/search?q=amorphous%20silica" title=" amorphous silica"> amorphous silica</a>, <a href="https://publications.waset.org/abstracts/search?q=carbon%20microstructure" title=" carbon microstructure"> carbon microstructure</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a> </p> <a href="https://publications.waset.org/abstracts/47448/the-manufacturing-of-metallurgical-grade-silicon-from-diatomaceous-silica-by-an-induction-furnace" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/47448.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">404</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">517</span> Repurposing of Crystalline Solar PV For Sodium Silicate Production</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Lawal%20Alkasim">Lawal Alkasim</a>, <a href="https://publications.waset.org/abstracts/search?q=Clement%20M.%20Gonah"> Clement M. Gonah</a>, <a href="https://publications.waset.org/abstracts/search?q=Zainab%20S.%20Aliyu"> Zainab S. Aliyu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work is focus on recovering silicon form photovoltaic cells and repurposing it toward the use in glass, ceramics or glass ceramics as it is made up of silicon material. Silicon is the main back-bone and responsible for the thermodynamic properties of glass, ceramics and glass ceramics materials. Antireflection silicon is soluble in hot alkali. Successfully the recovered material composed of silicon and silicon nitride of the A.R, with a small amount of silver, Aluminuim, lead & copper in the sunshine of crystalline/non-crystalline silicon solar cell. Aquaregia is used to remove the silver, Aluminium, lead & copper. The recovered material treated with hot alkali highly concentrated to produce sodium silicate, which is an alkali silicate glass (water glass). This type of glass is produced through chemical process, unlike other glasses that are produced through physical process of melting and non-crystalline solidification. It has showed a property of being alkali silicate glass from its solubility in water and insoluble in alcohol. The XRF analysis shows the presence of sodium silicate. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=unrecyclable%20solar%20PV" title="unrecyclable solar PV">unrecyclable solar PV</a>, <a href="https://publications.waset.org/abstracts/search?q=crystalline%20silicon" title=" crystalline silicon"> crystalline silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=hot%20conc.%20%20alkali" title=" hot conc. alkali"> hot conc. alkali</a>, <a href="https://publications.waset.org/abstracts/search?q=sodium%20silicate" title=" sodium silicate"> sodium silicate</a> </p> <a href="https://publications.waset.org/abstracts/168585/repurposing-of-crystalline-solar-pv-for-sodium-silicate-production" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/168585.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">100</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">516</span> Utilization of Silicon for Sustainable Rice Yield Improvement in Acid Sulfate Soil</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bunjirtluk%20Jintaridth">Bunjirtluk Jintaridth</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Utilization of silicon for sustainable rice cultivation in acid sulfate soils was studied for 2 years. The study was conducted on Rungsit soils in Amphoe Tanyaburi, Pathumtani Province. The objectives of this study were to assess the effect of high quality organic fertilizer in combination with silicon and chemical fertilizer on rice yield, chemical soil properties after using soil amendments, and also to assess the economic return. A Randomized Complete Block Design (RCBD) with 10 treatments and 3 replications were employed. The treatments were as follows: 1) control 2) chemical fertilizer (recommended by Land Development Department, LDD 3) silicon 312 kg/ha 4) high quality organic fertilizer at 1875 kg/ha (the recommendation rate by LDD) 5) silicon 156 kg/ha in combination with high quality organic fertilizer 1875 kg/ha 6) silicon at the 312 kg/ha in combination with high quality organic fertilizer 1875 kg/ha 7) silicon 156 kg/ha in combination with chemical fertilizer 8) silicon at the 312 kg/ha in combination with chemical fertilizer 9) silicon 156 kg/ha in combination with ½ chemical fertilizer rate, and 10) silicon 312 kg/ha in combination with ½ chemical fertilizer rate. The results of 2 years indicated the treatment tended to increase soil pH (from 5.1 to 4.7-5.5), percentage of organic matter (from 2.43 to 2.54 - 2.94%); avail. P (from 7.5 to 7-21 mg kg-1 P; ext. K (from 616 to 451-572 mg kg-1 K), ext Ca (from 1962 to 2042.3-4339.7 mg kg-1 Ca); ext Mg (from 1586 to 808.7-900 mg kg-1 Mg); but decrease the ext. Al (from 2.56 to 0.89-2.54 cmol kg-1 Al. Two years average of rice yield, the highest yield was obtained from silicon 156 kg/ha application in combination with high quality organic fertilizer 300 kg/rai (3770 kg/ha), or using silicon at the 312 kg/ha combination with high quality organic fertilizer 300 kg/rai. (3,750 kg/ha). It was noted that chemical fertilizer application with 156 and 312 kg/ha silicon gave only 3,260 และ 3,133 kg/ha, respectively. On the other hand, half rate of chemical fertilizer with 156 and 312 kg/ha with silicon gave the yield of 2,934 และ 3,218 kg/ha, respectively. While high quality organic fertilizer only can produce 3,318 kg/ha as compare to rice yield of 2,812 kg/ha from control. It was noted that the highest economic return was obtained from chemical fertilizer treated plots (886 dollars/ha). Silicon application at the rate of 156 kg/ha in combination with high quality organic fertilizer 1875 kg/ha gave the economic return of 846 dollars/ha, while 312 kg/ha of silicon with chemical fertilizer gave the lowest economic return (697 dollars/ha). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=rice" title="rice">rice</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20quality%20organic%20fertilizer" title=" high quality organic fertilizer"> high quality organic fertilizer</a>, <a href="https://publications.waset.org/abstracts/search?q=acid%20sulfate%20soil" title=" acid sulfate soil"> acid sulfate soil</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a> </p> <a href="https://publications.waset.org/abstracts/104606/utilization-of-silicon-for-sustainable-rice-yield-improvement-in-acid-sulfate-soil" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/104606.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">164</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">515</span> Three-dimensional Steady Flow in Thin Annular Pools of Silicon Melt under a Magnetic Field</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Brahim%20Mahfoud">Brahim Mahfoud</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A three-dimensional (3D) numerical technique is used to investigate the possibility of reducing the price of manufacturing some silicon-based devices, particularly those in which minor temperature gradients can significantly reduce performance. The silicon melt under the magnetic field produces Lorentz force, which can effectively suppress the flow which is caused by temperature gradients. This might allow some silicon-based products, such as solar cells, to be manufactured using a less pure, and hence less expensive. The thermocapillary effect of the silicon melt flow in thin annular pools subjected to an externally induced magnetic field was observed. The results reveal that with a strong enough magnetic field, isothermal lines change form and become concentric circles. As the amplitude of the magnetic field (Ha) grows, the azimuthal velocity and temperature at the free surface reduce, and the asymmetric 3D flow becomes axisymmetric steady when Ha surpasses a threshold value. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=magnetic%20field" title="magnetic field">magnetic field</a>, <a href="https://publications.waset.org/abstracts/search?q=manufacturing" title=" manufacturing"> manufacturing</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20melt" title=" silicon melt"> silicon melt</a>, <a href="https://publications.waset.org/abstracts/search?q=thermocapillary" title=" thermocapillary"> thermocapillary</a> </p> <a href="https://publications.waset.org/abstracts/174986/three-dimensional-steady-flow-in-thin-annular-pools-of-silicon-melt-under-a-magnetic-field" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/174986.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">84</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">514</span> Electrochemical Studies of Si, Si-Ge- and Ge-Air Batteries</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=R.%20C.%20Sharma">R. C. Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Rishabh%20Bansal"> Rishabh Bansal</a>, <a href="https://publications.waset.org/abstracts/search?q=Prajwal%20Menon"> Prajwal Menon</a>, <a href="https://publications.waset.org/abstracts/search?q=Manoj%20K.%20Sharma"> Manoj K. Sharma</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Silicon-air battery is highly promising for electric vehicles due to its high theoretical energy density (8470 Whkg⁻¹) and its discharge products are non-toxic. For the first time, pure silicon and germanium powders are used as anode material. Nickel wire meshes embedded with charcoal and manganese dioxide powder as cathode and concentrated potassium hydroxide is used as electrolyte. Voltage-time curves have been presented in this study for pure silicon and germanium powder and 5% and 10% germanium with silicon powder. Silicon powder cell assembly gives a stable voltage of 0.88 V for ~20 minutes while Si-Ge provides cell voltage of 0.80-0.76 V for ~10-12 minutes, and pure germanium cell provides cell voltage 0.80-0.76 V for ~30 minutes. The cell voltage is higher for concentrated (10%) sodium hydroxide solution (1.08 V) and it is stable for ~40 minutes. A sharp decrease in cell voltage beyond 40 min may be due to rapid corrosion. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Silicon-air%20battery" title="Silicon-air battery">Silicon-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=Germanium-air%20battery" title=" Germanium-air battery"> Germanium-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage-time%20curve" title=" voltage-time curve"> voltage-time curve</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage" title=" open circuit voltage"> open circuit voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=Anodic%20corrosion" title=" Anodic corrosion"> Anodic corrosion</a> </p> <a href="https://publications.waset.org/abstracts/138312/electrochemical-studies-of-si-si-ge-and-ge-air-batteries" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/138312.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">238</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">513</span> Predicting the Effect of Silicon Electrode Design Parameters on Thermal Performance of a Lithium-Ion Battery</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Harika%20Dasari">Harika Dasari</a>, <a href="https://publications.waset.org/abstracts/search?q=Eric%20Eisenbraun"> Eric Eisenbraun</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The present study models the role of electrode structural characteristics on the thermal behavior of lithium-ion batteries. Preliminary modeling runs have employed a 1D lithium-ion battery coupled to a two-dimensional axisymmetric model using silicon as the battery anode material. The two models are coupled by the heat generated and the average temperature. Our study is focused on the silicon anode particle sizes and it is observed that silicon anodes with nano-sized particles reduced the temperature of the battery in comparison to anodes with larger particles. These results are discussed in the context of the relationship between particle size and thermal transport properties in the electrode. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=particle%20size" title="particle size">particle size</a>, <a href="https://publications.waset.org/abstracts/search?q=NMC" title=" NMC"> NMC</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=heat%20generation" title=" heat generation"> heat generation</a>, <a href="https://publications.waset.org/abstracts/search?q=separator" title=" separator"> separator</a> </p> <a href="https://publications.waset.org/abstracts/143657/predicting-the-effect-of-silicon-electrode-design-parameters-on-thermal-performance-of-a-lithium-ion-battery" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/143657.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">289</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">512</span> Thermoelectric Properties of Doped Polycrystalline Silicon Film</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Li%20Long">Li Long</a>, <a href="https://publications.waset.org/abstracts/search?q=Thomas%20Ortlepp"> Thomas Ortlepp</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The transport properties of carriers in polycrystalline silicon film affect the performance of polycrystalline silicon-based devices. They depend strongly on the grain structure, grain boundary trap properties and doping concentration, which in turn are determined by the film deposition and processing conditions. Based on the properties of charge carriers, phonons, grain boundaries and their interactions, the thermoelectric properties of polycrystalline silicon are analyzed with the relaxation time approximation of the Boltz- mann transport equation. With this approach, thermal conductivity, electrical conductivity and Seebeck coefficient as a function of grain size, trap properties and doping concentration can be determined. Experiment on heavily doped polycrystalline silicon is carried out and measurement results are compared with the model. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=conductivity" title="conductivity">conductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=polycrystalline%20silicon" title=" polycrystalline silicon"> polycrystalline silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=relaxation%20time%20approximation" title=" relaxation time approximation"> relaxation time approximation</a>, <a href="https://publications.waset.org/abstracts/search?q=Seebeck%20coefficient" title=" Seebeck coefficient"> Seebeck coefficient</a>, <a href="https://publications.waset.org/abstracts/search?q=thermoelectric%20property" title=" thermoelectric property"> thermoelectric property</a> </p> <a href="https://publications.waset.org/abstracts/148818/thermoelectric-properties-of-doped-polycrystalline-silicon-film" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/148818.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">124</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">511</span> Streptavidin-Biotin Attachment on Modified Silicon Nanowires</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shalini%20Singh">Shalini Singh</a>, <a href="https://publications.waset.org/abstracts/search?q=Sanjay%20K.%20Srivastava"> Sanjay K. Srivastava</a>, <a href="https://publications.waset.org/abstracts/search?q=Govind"> Govind</a>, <a href="https://publications.waset.org/abstracts/search?q=Mukhtar.%20A.%20Khan"> Mukhtar. A. Khan</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20K.%20Singh"> P. K. Singh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Nanotechnology is revolutionizing the development of biosensors. Nanomaterials and nanofabrication technologies are increasingly being used to design novel biosensors. Sensitivity and other attributes of biosensors can be improved by using nanomaterials with unique chemical, physical, and mechanical properties in their construction. Silicon is a promising biomaterial that is non-toxic and biodegradable and can be exploited in chemical and biological sensing. Present study demonstrated the streptavidin–biotin interaction on silicon surfaces with different topographies such as flat and nanostructured silicon (nanowires) surfaces. Silicon nanowires with wide range of surface to volume ratio were prepared by electrochemical etching of silicon wafer. The large specific surface of silicon nanowires can be chemically modified to link different molecular probes (DNA strands, enzymes, proteins and so on), which recognize the target analytes, in order to enhance the selectivity and specificity of the sensor device. The interaction of streptavidin with biotin was carried out on 3-aminopropyltriethoxysilane (APTS) functionalized silicon surfaces. Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Photoelectron Spectroscopy (XPS) studies have been performed to characterize the surface characteristics to ensure the protein attachment. Silicon nanowires showed the enhance protein attachment, as compared to flat silicon surface due to its large surface area and good molecular penetration to its surface. The methodology developed herein could be generalized to a wide range of protein-ligand interactions, since it is relatively easy to conjugate biotin with diverse biomolecules such as antibodies, enzymes, peptides, and nucleotides. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=FTIR" title="FTIR">FTIR</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20nanowires" title=" silicon nanowires"> silicon nanowires</a>, <a href="https://publications.waset.org/abstracts/search?q=streptavidin-biotin" title=" streptavidin-biotin"> streptavidin-biotin</a>, <a href="https://publications.waset.org/abstracts/search?q=XPS" title=" XPS"> XPS</a> </p> <a href="https://publications.waset.org/abstracts/34731/streptavidin-biotin-attachment-on-modified-silicon-nanowires" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34731.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">417</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">510</span> All-Silicon Raman Laser with Quasi-Phase-Matched Structures and Resonators</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Isao%20Tomita">Isao Tomita</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=All-Silicon%20Raman%20Laser" title="All-Silicon Raman Laser">All-Silicon Raman Laser</a>, <a href="https://publications.waset.org/abstracts/search?q=FTTH" title=" FTTH"> FTTH</a>, <a href="https://publications.waset.org/abstracts/search?q=GE-PON" title=" GE-PON"> GE-PON</a>, <a href="https://publications.waset.org/abstracts/search?q=Quasi-Phase-Matched%20Structure" title=" Quasi-Phase-Matched Structure"> Quasi-Phase-Matched Structure</a>, <a href="https://publications.waset.org/abstracts/search?q=resonator" title=" resonator"> resonator</a> </p> <a href="https://publications.waset.org/abstracts/63334/all-silicon-raman-laser-with-quasi-phase-matched-structures-and-resonators" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/63334.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">254</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">509</span> Effect of Silicon on Tritrophic Interaction of Cotton, Whitefly and Chrysoperla carnea</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Asim%20Abbasi">Asim Abbasi</a>, <a href="https://publications.waset.org/abstracts/search?q=Muhammad%20Sufyan"> Muhammad Sufyan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The present experiment was carried out to examine the effects of silicon dioxide on tritrophic interaction of cotton, whitefly, and the predator Chrysoperla carnea. Population of whitefly was maintained on silicon treated and non-treated cotton for two generations in greenhouse net cages exposed to outside temperature and luminosity. The cotton was treated with silicon dioxide twice after 15 days intervals with 200 ppm concentration. A stock rearing of the natural predator was developed in the laboratory conditions. In the bioassay eggs of the predator all at the same age were individualized in glass petri plates that will be pierced with a pin to allow aeration and maintained in an incubator at 28 ± 2°C, 70 ± 10% relative humidity and 12h photo phase. Population of whitefly stayed on silicon treated, and non-treated cotton were offered to newly hatched chrysopid larvae until the end of the larval stage, assuring a permanent supply. Feeding preference of C. carnea along with longevity, survival of each instar larvae, pupation, adult emergence, and fecundity was checked. The results revealed that there was no significant difference in the feeding preference of C. carnea among both treatments. Durations of 1st and 2nd larval instar were also at par in both treatments. However overall longevity and adult emergence were a bit lower in silicon treated whitefly treatment. This may be due to the fact that silicon reduces the nutritional quality of host because of reduced whitefly feeding on silicon treated cotton. No significant difference in 1st and 2nd larval instars and then increased larval duration in later instars suggested that the effect of silicon treated host should be checked on more than 1 generation of C. carnea to get better findings. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chrysoperla%20carnea" title="Chrysoperla carnea">Chrysoperla carnea</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=tritrophic" title=" tritrophic"> tritrophic</a>, <a href="https://publications.waset.org/abstracts/search?q=whitefly" title=" whitefly"> whitefly</a> </p> <a href="https://publications.waset.org/abstracts/79228/effect-of-silicon-on-tritrophic-interaction-of-cotton-whitefly-and-chrysoperla-carnea" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/79228.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">180</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">508</span> Ultra-High Precision Diamond Turning of Infrared Lenses</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Khaled%20Abou-El-Hossein">Khaled Abou-El-Hossein</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The presentation will address the features of two IR convex lenses that have been manufactured using an ultra-high precision machining centre based on single-point diamond turning. The lenses are made from silicon and germanium with a radius of curvature of 500 mm. Because of the brittle nature of silicon and germanium, machining parameters were selected in such a way that ductile regime was achieved. The cutting speed was 800 rpm while the feed rate and depth cut were 20 mm/min and 20 um, respectively. Although both materials comprise a mono-crystalline microstructure and are quite similar in terms of optical properties, machining of silicon was accompanied with more difficulties in terms of form accuracy compared to germanium machining. The P-V error of the silicon profile was 0.222 um while it was only 0.055 um for the germanium lens. This could be attributed to the accelerated wear that takes place on the tool edge when turning mono-crystalline silicon. Currently, we are using other ranges of the machining parameters in order to determine their optimal range that could yield satisfactory performance in terms of form accuracy when fabricating silicon lenses. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=diamond%20turning" title="diamond turning">diamond turning</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20surfaces" title=" optical surfaces"> optical surfaces</a>, <a href="https://publications.waset.org/abstracts/search?q=precision%20machining" title=" precision machining"> precision machining</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20roughness" title=" surface roughness"> surface roughness</a> </p> <a href="https://publications.waset.org/abstracts/61253/ultra-high-precision-diamond-turning-of-infrared-lenses" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/61253.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">317</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">507</span> Effect of Oxidation on Wetting Behavior between Silicon and Silicon Carbide</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zineb%20Benouahmane">Zineb Benouahmane</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhang%20Lifeng"> Zhang Lifeng</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Experimental oxidation tests at high temperature (1300°C-1500°C) on α-SiC samples have been performed with different holding times and atmosphere (air, argon). Oxidized samples were then analyzed using X-ray photoelectron spectroscopy coupled to SEM and DAKTEK surface profiler verification. The oxidation rate and the mas gain were found to increase with temperature and holding times, corresponding to a passive oxidation regime which lead to the formation of SiO2 layer. The sessile drop method is employed in order to measure the wetting angles between Si/SiC system at high temperature (1430°C-1550°C). Contact angle can be varied between 44 °C to 85°C, by controlling the oxygen content in α-SiC. Increasing the temperature occurred the infiltration of liquid silicon and deoxidation of the coating. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=oxidation" title="oxidation">oxidation</a>, <a href="https://publications.waset.org/abstracts/search?q=wettability" title=" wettability"> wettability</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=SiC" title=" SiC"> SiC</a> </p> <a href="https://publications.waset.org/abstracts/22053/effect-of-oxidation-on-wetting-behavior-between-silicon-and-silicon-carbide" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22053.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">464</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">506</span> Development of 420 mm Diameter Silicon Crystal Growth Using Continuous Czochralski Process</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ilsun%20Pang">Ilsun Pang</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwanghun%20Kim"> Kwanghun Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Sungsun%20Baik"> Sungsun Baik </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Large diameter Si wafer is used as semiconductor substrate. Large diameter Si crystal ingot should be needed in order to increase wafer size. To make convection of large silicon melt stable, magnetic field is normally applied, but magnetic field is expensive and it is not proper to stabilize the large Si melt. To solve the problem, we propose a continuous Czochralski process which can be applied to small melt without magnetic field. We used granule poly, which has size distribution of 1~3 mm and is easily supplied in double crucible during silicon ingot growth. As the result, we produced 420 mm diameter ingot. In this paper, we describe an experimental study on crystal growth of large diameter silicon by Continuous Czochralski process. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Czochralski" title="Czochralski">Czochralski</a>, <a href="https://publications.waset.org/abstracts/search?q=ingot" title=" ingot"> ingot</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20crystal" title=" silicon crystal"> silicon crystal</a>, <a href="https://publications.waset.org/abstracts/search?q=wafer" title=" wafer"> wafer</a> </p> <a href="https://publications.waset.org/abstracts/23956/development-of-420-mm-diameter-silicon-crystal-growth-using-continuous-czochralski-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/23956.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge 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