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But we can understand the Universe. That makes us something very special.” - Stephen Hawking. " class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="eager" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-1-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-1-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-1-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-1-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide2" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-1" alt="FinFET Architecture Analysis and Fabrication Mechanism M.A.Qadeer Department of Electronics and Communication Mahatma Gandhi Institute of Technology Sai Sujith Seelam Department of Electronics and Communication Mahatma Gandhi Institute of " class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-2-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-2-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-2-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-2-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide3" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-2" alt="Topics  Introduction  Why FinFET??????  Evaluation and comparison of FinFET technology.  What are FinFET’s???  Structure & Architecture Analysis  Recent FinFET Development  Fabrication Mechanism  Advantages and Limitations of FinFET circuit design tradeoff’s  Applications of FinFET Technology " class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-3-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-3-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-3-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-3-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide4" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-3" alt="The term “FINFET” describes a non-planar, double gate transistor built on an SOI substrate, based on the single gate transistor design. The important characteristics of FINFET is that the conducting channel is wrapped by a thin Si “fin”, which forms the body of the device. The thickness of the fin determines the effective channel length of the device. " class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-4-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-4-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-4-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-4-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide5" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-4" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-5-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-5-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-5-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-5-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide6" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-5" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-6-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-6-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-6-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-6-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide7" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" 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srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-21-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-21-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-21-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-21-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide22" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-21" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-22-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-22-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-22-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-22-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide23" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-22" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-23-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-23-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-23-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-23-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide24" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-23" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-24-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-24-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-24-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-24-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide25" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-24" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-25-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-25-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-25-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-25-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide26" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-25" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-26-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-26-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-26-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-26-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide27" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-26" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-27-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-27-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-27-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-27-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide28" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-27" alt="To summarize, in FinFET due to dual gate structure it has better controlling over several short channel effect such as VT roll off, DIBL, subthreshold swing, gate direct tunnelling leakage and hot carrier effects compare to the planner MOSFET FinFET has higher integration density compare to the planner MOSFET. Also fabrication of the FinFET is easiest " class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-28-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-28-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-28-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-28-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide29" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-28" alt="[1] NTUEE SEMINAR CHUNG HSUN LI [2]Yang kayo-Choi, Leland Chang, Pushkar Ranade, Jeong-Soo Lee, Daewoo Ha, Siam Balasubramanian, Aditya Agarwal, Mike Ameen, Tus-Jae King and Jeffrey Boor. “FinFET Process Refinements for Improved for Mobility and Gate Work Function Engineering,” pp. 259-262, in IEDM Tech., 2002. [3] Jovanovich, T. Sligo, P. Biljanović, L.K. Naiver, “FinFET technology for wide-channel devices with ultra-thin silicon body”. [4] Bin Yu, Leland Chang*, Shelby Ahmed, Haiphong Wang, Scott Bell, Chih-Yuh Yang, Cyrus Tabery,Chau Ho, Qi Xiang, Tzu-Jae King*, Jeffrey Boor*, Chamming Hu*, Ming-Ren Lin, and David Kyser, “FinFET Scaling to 10nm Gate Length,” IEEE-2002. [5] Venkatnarayan Hariharan, 2005, “EEs801 Seminar report FinFETs,” http://www.ee.iitb.ac.in [6] Asif I. Khan and Muhammad K. Ashraf, “Study of Electron Distribution of Undoped Ultra Thin Body Symmetric Double Gate " class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-29-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-29-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-29-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-29-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide30" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-29" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-30-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-30-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-30-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-30-320.jpg" sizes="100vw"/></div></div></div><div><div id="slide31" class="VerticalSlide_root__jU_9r slide-item" style="aspect-ratio:960 / 540" data-cy="slide-container"><div class="VerticalSlideImage_root__64KSA"><img id="slide-image-30" alt="Finfets" class="vertical-slide-image VerticalSlideImage_image__VtE4p" data-testid="vertical-slide-image" loading="lazy" srcSet="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-31-320.jpg 320w, https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-31-638.jpg 638w, https://image.slidesharecdn.com/finfets-160711173632/75/Finfets-31-2048.jpg 2048w" src="https://image.slidesharecdn.com/finfets-160711173632/85/Finfets-31-320.jpg" sizes="100vw"/></div></div></div></div></div><div id="sidebar" class="sidebar hide-scrollbar Sidebar_root__1BbNu" style="--slots:11"><div class="above-recs-ad-wrapper AboveRecsAd_root__iTmTR"><div class="AboveRecsAd_desktopAd__ymykj"><div class="freestar-ad-container FreestarAdContainer_root__qPPC_" style="--fallback-aspect-ratio:300 / 260" data-testid="freestar-ad-container"><div><div class="" id="above-recs-desktop-ad-sm"></div></div></div></div></div><div class="rail-recs RailRecommendations_root__zqtZQ"><h2 class="RailRecommendations_title__kt1D2">Recommended</h2><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-0" aria-haspopup="dialog" aria-controls=":Rgql4f6:" popovertarget=":Rgql4f6:" style="anchor-name:--popover-Rgql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-technology/227466347"><span class="sr-only">Finfet Technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:0" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Finfet Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/17304013-navya-200209170047-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Finfet Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/17304013-navya-200209170047-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Finfet Technology</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Finfet Technology for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mgql4f6:" popovertarget=":R5mgql4f6:" style="anchor-name:--popover-R5mgql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mgql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mgql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/SrinivasVasamsetti2">Srinivas Vasamsetti </a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses FinFET technology. It begins with an introduction to FinFETs, explaining that they are a type of double-gate CMOS that offers advantages over traditional CMOS for scaling to short gate lengths. It then discusses why FinFET technology is needed as traditional CMOS scaling faces challenges from subthreshold and gate leakage. It provides details on double-gate FET structure and operation, including how it controls short-channel effects better than single-gate FETs. It also covers FinFET features, applications, challenges and concludes that FinFETs can help continue CMOS scaling if key issues like fin patterning and gate work functions are addressed.</span></div></div><div class="" id=":Rgql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rgql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-1" aria-haspopup="dialog" aria-controls=":Rhal4f6:" popovertarget=":Rhal4f6:" style="anchor-name:--popover-Rhal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/introduction-to-finfet-89025450/89025450"><span class="sr-only">Introduction to FinFET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:1" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Introduction to FinFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/introductiontofinfet-180227020253-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Introduction to FinFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/introductiontofinfet-180227020253-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Introduction to FinFET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Introduction to FinFET for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mhal4f6:" popovertarget=":R5mhal4f6:" style="anchor-name:--popover-R5mhal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mhal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mhal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/ManishKenchi">ManishKenchi</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">For more information regarding the "Construction of finFET" you can contact through mail (manishkenchi111296@gmail.com)</span></div></div><div class="" id=":Rhal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rhal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-2" aria-haspopup="dialog" aria-controls=":Rhql4f6:" popovertarget=":Rhql4f6:" style="anchor-name:--popover-Rhql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/introduction-to-finfet-details-of-finfet/239800902"><span class="sr-only">Introduction to FINFET, Details of FinFET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:2" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Introduction to FINFET, Details of FinFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfetppt-201205162426-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Introduction to FINFET, Details of FinFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfetppt-201205162426-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Introduction to FINFET, Details of FinFET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Introduction to FINFET, Details of FinFET for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mhql4f6:" popovertarget=":R5mhql4f6:" style="anchor-name:--popover-R5mhql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mhql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mhql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/justingeorge55">Justin George</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">1) The document discusses FinFET, a type of non-planar transistor used in modern semiconductor fabrication. It describes the construction of FinFET which involves etching fins on an SOI substrate and wrapping gates around the fins. 2) FinFET works by having an elevated fin-shaped channel that the gate wraps around. This allows FinFET to operate at lower voltage and offer higher drive current compared to planar transistors. 3) FinFET technology is being widely adopted in integrated circuits due to advantages like suppressed short channel effect, better drive current, lower leakage power, and no random dopant fluctuation.</span></div></div><div class="" id=":Rhql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rhql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-3" aria-haspopup="dialog" aria-controls=":Rial4f6:" popovertarget=":Rial4f6:" style="anchor-name:--popover-Rial4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-47143716/47143716"><span class="sr-only">Finfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:3" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Finfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfet-150418093709-conversion-gate01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Finfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfet-150418093709-conversion-gate01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Finfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Finfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mial4f6:" popovertarget=":R5mial4f6:" style="anchor-name:--popover-R5mial4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mial4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mial4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/AdityaSingh155">Aditya Singh</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the history and development of FinFET transistors. FinFETs were developed to overcome short channel effects by using a thin silicon fin as the channel between the source and drain. This allows the gate to control the channel from both sides and edges of the fin. FinFET fabrication involves depositing fins using electron beam lithography then depositing a gate material around the fins. FinFETs suppress short channel effects and allow for higher density transistors compared to planar MOSFETs, though they also have some disadvantages like reduced mobility.</span></div></div><div class="" id=":Rial4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rial4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-4" aria-haspopup="dialog" aria-controls=":Riql4f6:" popovertarget=":Riql4f6:" style="anchor-name:--popover-Riql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/fin-fet-technology-by-samra/4055165"><span class="sr-only">Fin Fet Technology by SAMRA</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:4" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Fin Fet Technology by SAMRA" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettechnology-100511160559-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Fin Fet Technology by SAMRA" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettechnology-100511160559-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Fin Fet Technology by SAMRA</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Fin Fet Technology by SAMRA for later" role="switch" aria-haspopup="dialog" aria-controls=":R5miql4f6:" popovertarget=":R5miql4f6:" style="anchor-name:--popover-R5miql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5miql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5miql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/samra0077">Bal Partap Singh</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">FinFET technology uses a fin-like gate structure rather than a planar structure to help enable continued transistor scaling. FinFETs have a thin vertical "fin" structure rather than a flat design. This allows for better control of the channel and helps address issues like short channel effects. FinFETs can be fabricated using either a gate-first or gate-last process and involve patterning thin fins on a silicon-on-insulator wafer and then adding gate material. FinFETs offer benefits like reduced leakage currents and separate control of threshold voltages.</span></div></div><div class="" id=":Riql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Riql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-5" aria-haspopup="dialog" aria-controls=":Rjal4f6:" popovertarget=":Rjal4f6:" style="anchor-name:--popover-Rjal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet/30323450"><span class="sr-only">Finfet; My 3rd PPT in clg</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:5" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Finfet; My 3rd PPT in clg" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfet-140122182224-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Finfet; My 3rd PPT in clg" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfet-140122182224-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Finfet; My 3rd PPT in clg</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Finfet; My 3rd PPT in clg for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mjal4f6:" popovertarget=":R5mjal4f6:" style="anchor-name:--popover-R5mjal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mjal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mjal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/ARUNASUJITHA">ARUNASUJITHA</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">FINFET is a type of non-planar transistor with a conducting channel that is wrapped by a thin silicon fin. It was developed to overcome short channel effects seen in planar MOSFETs as transistors continue to shrink. Key aspects of FINFETs include the fin structure which allows gate control of the channel from both sides and the top, reducing leakage currents. Fabrication involves depositing fins and wrapping a gate material around them. FINFETs have been shown to effectively suppress short channel effects even at very small gate lengths, but come with increased manufacturing complexity and potential reliability issues compared to planar transistors.</span></div></div><div class="" id=":Rjal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rjal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-6" aria-haspopup="dialog" aria-controls=":Rjql4f6:" popovertarget=":Rjql4f6:" style="anchor-name:--popover-Rjql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/short-channel-effects-in-mosfets-vlsi-design/249395028"><span class="sr-only">SHORT CHANNEL EFFECTS IN MOSFETS- VLSI DESIGN</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:6" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="SHORT CHANNEL EFFECTS IN MOSFETS- VLSI DESIGN" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchannel-210617085230-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="SHORT CHANNEL EFFECTS IN MOSFETS- VLSI DESIGN" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchannel-210617085230-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">SHORT CHANNEL EFFECTS IN MOSFETS- VLSI DESIGN</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save SHORT CHANNEL EFFECTS IN MOSFETS- VLSI DESIGN for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mjql4f6:" popovertarget=":R5mjql4f6:" style="anchor-name:--popover-R5mjql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mjql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mjql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/Nithin34">NITHIN KALLE PALLY</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">SHORT-CHANNEL EFFECTS A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important . This leads to many undesirable effects in MOSFET. The short-channel effects are attributed to two physical phenomena: A) The limitation imposed on electron drift characteristics in the channel, B) The modification of the threshold voltage due to the shortening channel length. In particular five different short-channel effects can be distinguished: 1. Drain-induced barrier lowering and “Punch through” 2. Surface scattering 3. Velocity saturation 4. Impact ionization 5. Hot electrons </span></div></div><div class="" id=":Rjql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rjql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-7" aria-haspopup="dialog" aria-controls=":Rkal4f6:" popovertarget=":Rkal4f6:" style="anchor-name:--popover-Rkal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/analytical-modeling-of-tunneling-field-effect-transistor-tfet-74188307/74188307"><span class="sr-only">Analytical Modeling of Tunneling Field Effect Transistor (TFET)</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:7" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Analytical Modeling of Tunneling Field Effect Transistor (TFET)" src="https://cdn.slidesharecdn.com/ss_thumbnails/analyticalmodelingoftunnelingfieldeffecttransistortfet-170402163537-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Analytical Modeling of Tunneling Field Effect Transistor (TFET)" src="https://cdn.slidesharecdn.com/ss_thumbnails/analyticalmodelingoftunnelingfieldeffecttransistortfet-170402163537-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Analytical Modeling of Tunneling Field Effect Transistor (TFET)</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Analytical Modeling of Tunneling Field Effect Transistor (TFET) for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mkal4f6:" popovertarget=":R5mkal4f6:" style="anchor-name:--popover-R5mkal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mkal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mkal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/MdAbuObayda">Abu Obayda</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">1. The document discusses the analytical modeling of tunnel field effect transistors (TFETs). TFETs are devices that can switch between on and off states at low voltages compared to MOSFETs. 2. TFETs operate using the principle of band-to-band tunneling, allowing for a steeper subthreshold slope than MOSFETs. However, TFETs currently have low drive currents that require further research to make them suitable for practical applications. 3. The document examines equations and parameters for calculating the drain current in TFETs and investigating the effects of channel length and gate voltage on this current. It also outlines some benefits and limitations of TFETs.</span></div></div><div class="" id=":Rkal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rkal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-8" aria-haspopup="dialog" aria-controls=":Rkql4f6:" popovertarget=":Rkql4f6:" style="anchor-name:--popover-Rkql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/shudhanshu29/silicon-on-insulator-soi-technology"><span class="sr-only">Silicon on Insulator (SOI) Technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:8" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Silicon on Insulator (SOI) Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/soiss-171209180845-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Silicon on Insulator (SOI) Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/soiss-171209180845-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Silicon on Insulator (SOI) Technology</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Silicon on Insulator (SOI) Technology for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mkql4f6:" popovertarget=":R5mkql4f6:" style="anchor-name:--popover-R5mkql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mkql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mkql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/shudhanshu29">Sudhanshu Janwadkar</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This presentation discusses about the concept of SOI technology, Fabrication methods, applications, advantages and limitations of SOI technology.</span></div></div><div class="" id=":Rkql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rkql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-9" aria-haspopup="dialog" aria-controls=":Rlal4f6:" popovertarget=":Rlal4f6:" style="anchor-name:--popover-Rlal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-and-short-channel-effects/70379558"><span class="sr-only">MOSFET and Short channel effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:9" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOSFET and Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-161222172031-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOSFET and Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-161222172031-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">MOSFET and Short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOSFET and Short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mlal4f6:" popovertarget=":R5mlal4f6:" style="anchor-name:--popover-R5mlal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mlal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mlal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/MuzafarRather">Lee Rather</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.</span></div></div><div class="" id=":Rlal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rlal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-10" aria-haspopup="dialog" aria-controls=":Rlql4f6:" popovertarget=":Rlql4f6:" style="anchor-name:--popover-Rlql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/second-order-effects/89683801"><span class="sr-only">Second order effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:10" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Second order effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/secondordereffects-180305173314-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Second order effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/secondordereffects-180305173314-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Second order effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Second order effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mlql4f6:" popovertarget=":R5mlql4f6:" style="anchor-name:--popover-R5mlql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mlql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mlql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/rppvch">PRAVEEN KUMAR CHITLURI</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses four topics related to transistors: 1. Threshold voltage is the minimum gate voltage needed to create a conducting path between source and drain, and depends on oxide thickness, temperature, and random dopant fluctuations. 2. Latchup refers to a short circuit formed between power and ground rails in an integrated circuit, caused by interaction between parasitic bipolar transistors. 3. Electromigration is the forced movement of metal ions due to an electric field, with atoms traveling toward the positive conductor end and vacancies toward the negative end. 4. Mobility degradation occurs due to lateral and vertical electric fields scattering carriers, reducing surface mobility as channel lengths shrink.</span></div></div><div class="" id=":Rlql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rlql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-11" aria-haspopup="dialog" aria-controls=":Rmal4f6:" popovertarget=":Rmal4f6:" style="anchor-name:--popover-Rmal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-soifet-and-finfet/236290962"><span class="sr-only">MOSFET, SOI-FET and FIN-FET-ABU SYED KUET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:11" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOSFET, SOI-FET and FIN-FET-ABU SYED KUET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetsoi-fetandfinfet-200627074207-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOSFET, SOI-FET and FIN-FET-ABU SYED KUET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetsoi-fetandfinfet-200627074207-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">MOSFET, SOI-FET and FIN-FET-ABU SYED KUET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOSFET, SOI-FET and FIN-FET-ABU SYED KUET for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mmal4f6:" popovertarget=":R5mmal4f6:" style="anchor-name:--popover-R5mmal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mmal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mmal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/syedsumon">A. S. M. Jannatul Islam</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document provides an overview of the history and scaling of transistors and integrated circuits. It discusses how vacuum tubes were replaced by transistors, with the first transistor invented in 1947 and the first integrated circuit in 1958. It describes how continuous scaling and improvements in silicon manufacturing have led to billions of transistors being integrated onto a single chip today. The document then discusses different transistor technologies, including MOSFETs, and how scaling to smaller sizes introduced challenges like short channel effects that new transistor designs like FinFETs help address.</span></div></div><div class="" id=":Rmal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rmal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-12" aria-haspopup="dialog" aria-controls=":Rmql4f6:" popovertarget=":Rmql4f6:" style="anchor-name:--popover-Rmql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-transistors/247492683"><span class="sr-only">Finfet Transistors</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:12" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Finfet Transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettransistors-210501175258-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Finfet Transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettransistors-210501175258-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Finfet Transistors</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Finfet Transistors for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mmql4f6:" popovertarget=":R5mmql4f6:" style="anchor-name:--popover-R5mmql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mmql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mmql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/SmaeilJavadi">Esmaeil Javadi</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the history and advantages of FINFET transistors over traditional planar MOSFETs. It explains that as MOSFET feature sizes decreased below 20nm, short channel effects became a challenge to address. FINFETs were developed as a solution, using fin-shaped silicon channels that allow for better channel control and reduced short channel effects compared to planar MOSFETs. Key advantages of FINFETs include the ability to scale to smaller feature sizes like 7nm, significantly reduced power consumption, higher operating speeds, and greatly reduced static leakage current.</span></div></div><div class="" id=":Rmql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rmql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-13" aria-haspopup="dialog" aria-controls=":Rnal4f6:" popovertarget=":Rnal4f6:" style="anchor-name:--popover-Rnal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/introduction-to-vlsi/1398844"><span class="sr-only">Introduction to VLSI </span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:13" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Introduction to VLSI " src="https://cdn.slidesharecdn.com/ss_thumbnails/lecture-vlsi-090507042309-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Introduction to VLSI " src="https://cdn.slidesharecdn.com/ss_thumbnails/lecture-vlsi-090507042309-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Introduction to VLSI </span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Introduction to VLSI for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mnal4f6:" popovertarget=":R5mnal4f6:" style="anchor-name:--popover-R5mnal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mnal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mnal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/illpa">illpa</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document provides an overview of VLSI design for a course. It discusses topics including CMOS transistors and logic gates, VLSI levels of abstraction, the VLSI design process, design styles like full custom and ASIC, and trends like Moore's Law. The roadmap outlines topics to be covered like CMOS processing, combinational and sequential circuit design, and a design project to complete a chip. Course objectives are listed relating to VLSI analysis, layout design, and system design skills.</span></div></div><div class="" id=":Rnal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rnal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-14" aria-haspopup="dialog" aria-controls=":Rnql4f6:" popovertarget=":Rnql4f6:" style="anchor-name:--popover-Rnql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/ic-tech-unit-5-vlsi-process-integration/70256121"><span class="sr-only">Ic tech unit 5- VLSI Process Integration</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:14" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Ic tech unit 5- VLSI Process Integration" src="https://cdn.slidesharecdn.com/ss_thumbnails/ictechunit5-161219055549-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Ic tech unit 5- VLSI Process Integration" src="https://cdn.slidesharecdn.com/ss_thumbnails/ictechunit5-161219055549-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Ic tech unit 5- VLSI Process Integration</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Ic tech unit 5- VLSI Process Integration for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mnql4f6:" popovertarget=":R5mnql4f6:" style="anchor-name:--popover-R5mnql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mnql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mnql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/kritickasharma">kriticka sharma</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">junction oxide and isolation techniques, LOCOS, Metallization, NMOS and CMOS technology, FAult diagnosis</span></div></div><div class="" id=":Rnql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rnql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-15" aria-haspopup="dialog" aria-controls=":Roal4f6:" popovertarget=":Roal4f6:" style="anchor-name:--popover-Roal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/review-of-fin-fet-technology-and-circuit-design-challenges-62505971/62505971"><span class="sr-only">Review of Fin FET Technology and Circuit Design Challenges</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:15" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Review of Fin FET Technology and Circuit Design Challenges" src="https://cdn.slidesharecdn.com/ss_thumbnails/f496990c-5231-427b-8431-548cfe16ea67-160529074132-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Review of Fin FET Technology and Circuit Design Challenges" src="https://cdn.slidesharecdn.com/ss_thumbnails/f496990c-5231-427b-8431-548cfe16ea67-160529074132-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Review of Fin FET Technology and Circuit Design Challenges</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Review of Fin FET Technology and Circuit Design Challenges for later" role="switch" aria-haspopup="dialog" aria-controls=":R5moal4f6:" popovertarget=":R5moal4f6:" style="anchor-name:--popover-R5moal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5moal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5moal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/rbl87">rbl87</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">1. FinFET technology uses a fin-like gate structure to improve gate control and reduce leakage compared to planar CMOS. It allows continued transistor scaling beyond limits of planar devices. 2. There are manufacturing challenges for FinFETs including fin patterning and variability, doping, stress application, and parasitic capacitance. Circuit design challenges include adapting SRAM cells and EDA tools to the 3D FinFET structure. 3. FinFETs are now used for high performance logic but new materials and design approaches are still being explored to further improve FinFET technology and address remaining challenges in manufacturing and circuit design.</span></div></div><div class="" id=":Roal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Roal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-16" aria-haspopup="dialog" aria-controls=":Roql4f6:" popovertarget=":Roql4f6:" style="anchor-name:--popover-Roql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/analog-design-cit-f/29991014"><span class="sr-only">Analog Layout design </span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:16" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Analog Layout design " src="https://cdn.slidesharecdn.com/ss_thumbnails/analogdesigncitf-140114022933-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Analog Layout design " src="https://cdn.slidesharecdn.com/ss_thumbnails/analogdesigncitf-140114022933-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Analog Layout design </span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Analog Layout design for later" role="switch" aria-haspopup="dialog" aria-controls=":R5moql4f6:" popovertarget=":R5moql4f6:" style="anchor-name:--popover-R5moql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5moql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5moql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/slpinjare">slpinjare</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document provides an overview of analog layout design. It discusses that analog circuits require careful attention to geometry during layout due to process variations. The analog design flow includes electrical design, physical design involving layout, and fabrication/testing. Key considerations for analog layout include minimizing parasitic resistances and capacitances, reducing noise, and ensuring matching between identical components using techniques like common-centroid layout. Resistors and capacitors must be carefully laid out to minimize non-ideal effects and provide accurate values.</span></div></div><div class="" id=":Roql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Roql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-17" aria-haspopup="dialog" aria-controls=":Rpal4f6:" popovertarget=":Rpal4f6:" style="anchor-name:--popover-Rpal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/short-channel-effect-in-mosfet/30941570"><span class="sr-only">Short Channel Effect In MOSFET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:17" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Short Channel Effect In MOSFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetbest-140207060709-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Short Channel Effect In MOSFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetbest-140207060709-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Short Channel Effect In MOSFET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Short Channel Effect In MOSFET for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mpal4f6:" popovertarget=":R5mpal4f6:" style="anchor-name:--popover-R5mpal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mpal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mpal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/SudhanshuSrivastava4">Sudhanshu Srivastava</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Know the versatile knowledge about MOSFET, it is the analysis at small level as short channeling in MOSFET</span></div></div><div class="" id=":Rpal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rpal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-18" aria-haspopup="dialog" aria-controls=":Rpql4f6:" popovertarget=":Rpql4f6:" style="anchor-name:--popover-Rpql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-tsmcpdf/256174061"><span class="sr-only">finfet tsmc.pdf</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:18" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="finfet tsmc.pdf" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfrttsmc-230301080402-e61fe530-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="finfet tsmc.pdf" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfrttsmc-230301080402-e61fe530-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">finfet tsmc.pdf</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save finfet tsmc.pdf for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mpql4f6:" popovertarget=":R5mpql4f6:" style="anchor-name:--popover-R5mpql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mpql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mpql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/MANSISHEKHAWAT3">MANSISHEKHAWAT3</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document is a tutorial on circuit design using FinFETs presented at the 2013 IEEE International Solid-State Circuits Conference by Bing Sheu from TSMC. The tutorial covers technology considerations of FinFETs including their electrostatics benefits, SPICE modeling using the BSIM-CMG model, digital and memory circuit design methodology, and applications to analog/mixed-signal circuits. The document provides details on FinFET device structures, parasitic capacitances, scaling techniques, and performance comparisons to planar MOSFETs.</span></div></div><div class="" id=":Rpql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rpql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-19" aria-haspopup="dialog" aria-controls=":Rqal4f6:" popovertarget=":Rqal4f6:" style="anchor-name:--popover-Rqal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/vlsi-design-11/76610343"><span class="sr-only">Vlsi design 11</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:19" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Vlsi design 11" src="https://cdn.slidesharecdn.com/ss_thumbnails/vlsibasics11-170603064924-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Vlsi design 11" src="https://cdn.slidesharecdn.com/ss_thumbnails/vlsibasics11-170603064924-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Vlsi design 11</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Vlsi design 11 for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mqal4f6:" popovertarget=":R5mqal4f6:" style="anchor-name:--popover-R5mqal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mqal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mqal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/hdiwakar">HIMANSHU DIWAKAR</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses the basics of Very Large Scale Integration (VLSI) design. It begins with a brief history of transistors and integrated circuits. It then covers Moore's Law and the evolution of logic complexity in integrated circuits from single transistors to today's ultra-large scale integration. The rest of the document discusses VLSI design methodologies, including the design flow from behavioral to layout representations using a Y-chart. It emphasizes concepts like regularity, modularity, and locality to manage complexity in VLSI designs.</span></div></div><div class="" id=":Rqal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rqal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-20" aria-haspopup="dialog" aria-controls=":Rqql4f6:" popovertarget=":Rqql4f6:" style="anchor-name:--popover-Rqql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/short-channel-effects-115332110/115332110"><span class="sr-only">Short channel effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:20" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchanneleffects-180919050414-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchanneleffects-180919050414-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mqql4f6:" popovertarget=":R5mqql4f6:" style="anchor-name:--popover-R5mqql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mqql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mqql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/aditiagrawal97">aditiagrawal97</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses short channel effects that occur in MOSFET devices when the channel length decreases to the same order of magnitude as the source/drain junction depth. It describes five main short channel effects: drain induced barrier lowering, drain punch through, velocity saturation, impact ionization, and hot electron effects. For each effect, it provides an explanation of the physical phenomenon and how it impacts device performance as the channel length decreases. It concludes by listing three references for further reading on leakage current mechanisms and MOSFET modeling.</span></div></div><div class="" id=":Rqql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rqql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-21" aria-haspopup="dialog" aria-controls=":Rral4f6:" popovertarget=":Rral4f6:" style="anchor-name:--popover-Rral4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mos-transistor-13/76610396"><span class="sr-only">MOS transistor 13</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:21" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOS transistor 13" src="https://cdn.slidesharecdn.com/ss_thumbnails/mostransistor13-170603065326-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOS transistor 13" src="https://cdn.slidesharecdn.com/ss_thumbnails/mostransistor13-170603065326-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">MOS transistor 13</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOS transistor 13 for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mral4f6:" popovertarget=":R5mral4f6:" style="anchor-name:--popover-R5mral4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mral4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mral4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/hdiwakar">HIMANSHU DIWAKAR</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the structure and operation of MOS transistors. It describes the basic MOS structure which consists of a metal gate separated from a semiconductor substrate by an oxide layer. Applying a voltage to the gate can induce an inversion layer in the semiconductor to form a channel between the source and drain, allowing current to flow. The threshold voltage is the minimum gate voltage required to form an inversion layer. The document discusses n-channel MOSFETs and their characteristics in different regions of operation defined by the gate-source voltage.</span></div></div><div class="" id=":Rral4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rral4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-22" aria-haspopup="dialog" aria-controls=":Rrql4f6:" popovertarget=":Rrql4f6:" style="anchor-name:--popover-Rrql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-65416347/65416347"><span class="sr-only">Mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:22" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/maa2-160827103000-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/maa2-160827103000-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mrql4f6:" popovertarget=":R5mrql4f6:" style="anchor-name:--popover-R5mrql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mrql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mrql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/MdNahidSarker">Md. Nahid Sarker</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes the MOSFET as a four-terminal device (gate, drain, source, body) that is commonly used as a three-terminal device by connecting the body and source terminals. The MOSFET is the most common transistor in digital and analog circuits. Silicon is typically used as the semiconductor, though some manufacturers are using silicon-germanium compounds. Research continues on using other semiconductor materials that form good interfaces with insulators.</span></div></div><div class="" id=":Rrql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rrql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-23" aria-haspopup="dialog" aria-controls=":Rsal4f6:" popovertarget=":Rsal4f6:" style="anchor-name:--popover-Rsal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/bgr-57274715/57274715"><span class="sr-only">BGR</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:23" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="BGR" src="https://cdn.slidesharecdn.com/ss_thumbnails/fe67e1bd-c993-4e70-9b81-ab711473d201-160120124327-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="BGR" src="https://cdn.slidesharecdn.com/ss_thumbnails/fe67e1bd-c993-4e70-9b81-ab711473d201-160120124327-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">BGR</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save BGR for later" role="switch" aria-haspopup="dialog" aria-controls=":R5msal4f6:" popovertarget=":R5msal4f6:" style="anchor-name:--popover-R5msal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5msal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5msal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/lingadharreddy">lingadhar reddy</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document describes the implementation of a bandgap reference circuit. It begins by acknowledging those who supported the project. It then provides an abstract stating that bandgap reference circuits are used to generate stable reference voltages and currents on integrated circuits. The main goal of the project was to understand bandgap reference design and limitations, and implement a bandgap reference circuit in a 90nm CMOS technology using CADENCE.</span></div></div><div class="" id=":Rsal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rsal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-24" aria-haspopup="dialog" aria-controls=":Rsql4f6:" popovertarget=":Rsql4f6:" style="anchor-name:--popover-Rsql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/NaveenKumar11/vlsi-routing"><span class="sr-only">VLSI routing</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:24" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="VLSI routing" src="https://cdn.slidesharecdn.com/ss_thumbnails/naveenrouting-120531015504-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="VLSI routing" src="https://cdn.slidesharecdn.com/ss_thumbnails/naveenrouting-120531015504-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">VLSI routing</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save VLSI routing for later" role="switch" aria-haspopup="dialog" aria-controls=":R5msql4f6:" popovertarget=":R5msql4f6:" style="anchor-name:--popover-R5msql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5msql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5msql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/NaveenKumar11">Naveen Kumar</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Routing in Integrated circuits is an important task which requires extreme care while placing the modules and circuits and connecting them with each other.</span></div></div><div class="" id=":Rsql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rsql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-25" aria-haspopup="dialog" aria-controls=":Rtal4f6:" popovertarget=":Rtal4f6:" style="anchor-name:--popover-Rtal4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/gaa-nano-wire-fet/64700230"><span class="sr-only">GAA nano wire FET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:25" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="GAA nano wire FET" src="https://cdn.slidesharecdn.com/ss_thumbnails/20nmnwt1312088-160804141816-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="GAA nano wire FET" src="https://cdn.slidesharecdn.com/ss_thumbnails/20nmnwt1312088-160804141816-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">GAA nano wire FET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save GAA nano wire FET for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mtal4f6:" popovertarget=":R5mtal4f6:" style="anchor-name:--popover-R5mtal4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mtal4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mtal4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/jdkaushik">Jaidev Kaushik</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document summarizes the design and performance analysis of 20nm silicon/germanium channel pentagonal and trapezoidal nanowire transistors. It presents the objectives of designing these nanowire transistors with different process parameters like diameter and height. The methodology involves using TCAD software to simulate the transfer characteristics, output characteristics, and short channel effects for different cross-sectional shapes and materials. The results show that pentagonal and trapezoidal nanowire transistors with germanium channels exhibit higher on-currents and on/off current ratios than triangular nanowire transistors. Key performance metrics like subthreshold swing and DIBL are also better for the pentagonal and trapezoidal nanowire transistors.</span></div></div><div class="" id=":Rtal4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rtal4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-26" aria-haspopup="dialog" aria-controls=":Rtql4f6:" popovertarget=":Rtql4f6:" style="anchor-name:--popover-Rtql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-short-channel-effects/111603432"><span class="sr-only">Mosfet short channel effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:26" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Mosfet short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-180826085922-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Mosfet short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-180826085922-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Mosfet short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Mosfet short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mtql4f6:" popovertarget=":R5mtql4f6:" style="anchor-name:--popover-R5mtql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mtql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mtql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/BalaGopi1">kesana Bala Gopi</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Short channel effects arise when the channel length of a MOSFET becomes comparable to the depletion layer width. This causes unwanted effects such as drain-induced barrier lowering (DIBL), where the drain voltage lowers the channel potential barrier; surface scattering, where carriers collide with the surface increasing; and velocity saturation, where the electric field saturates the carrier drift velocity. Other effects are impact ionization, where high-energy carriers generate electron-hole pairs, and hot carrier injection (HCI). Short channel effects degrade performance and reliability in smaller transistors.</span></div></div><div class="" id=":Rtql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rtql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-27" aria-haspopup="dialog" aria-controls=":Rual4f6:" popovertarget=":Rual4f6:" style="anchor-name:--popover-Rual4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/group-1finfet-finalpptx/263285611"><span class="sr-only">Group 1_FinFET Final.pptx</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:27" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Group 1_FinFET Final.pptx" src="https://cdn.slidesharecdn.com/ss_thumbnails/group1finfetfinal-231111081621-ba332891-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Group 1_FinFET Final.pptx" src="https://cdn.slidesharecdn.com/ss_thumbnails/group1finfetfinal-231111081621-ba332891-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Group 1_FinFET Final.pptx</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Group 1_FinFET Final.pptx for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mual4f6:" popovertarget=":R5mual4f6:" style="anchor-name:--popover-R5mual4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mual4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mual4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/PrashantKashyap83">PrashantKashyap83</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses FinFET transistors. It provides a history of FinFET development starting in 1998. FinFETs were created to allow Moore's Law to continue by addressing short channel effects in traditional planar MOSFETs as devices continued scaling. FinFETs use a fin-like gate structure to improve gate control and reduce leakage currents. The document outlines FinFET structure, characteristics, fabrication process, advantages, applications and the future of FinFET technology as it aims to scale below 5nm.</span></div></div><div class="" id=":Rual4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rual4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-28" aria-haspopup="dialog" aria-controls=":Ruql4f6:" popovertarget=":Ruql4f6:" style="anchor-name:--popover-Ruql4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-dgfet/42016838"><span class="sr-only">finfet & dg-fet technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:28" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="finfet & dg-fet technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/assignment-141125135646-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="finfet & dg-fet technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/assignment-141125135646-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">finfet & dg-fet technology</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save finfet & dg-fet technology for later" role="switch" aria-haspopup="dialog" aria-controls=":R5muql4f6:" popovertarget=":R5muql4f6:" style="anchor-name:--popover-R5muql4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5muql4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5muql4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/kmaggu1">Kritika Ramesh</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">FINFETs were developed to address issues with traditional MOSFETs as components continue to shrink, including short channel effects and higher leakage currents. FINFETs utilize a fin-like structure with a gate on three sides to improve control over the channel and suppress short channel effects. This allows for better scaling to smaller sizes while maintaining performance and lowering power consumption compared to planar MOSFETs and dual-gate devices.</span></div></div><div class="" id=":Ruql4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Ruql4f6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="recommended-card-description-29" aria-haspopup="dialog" aria-controls=":Rval4f6:" popovertarget=":Rval4f6:" style="anchor-name:--popover-Rval4f6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/double-gate-mosfet/31166224"><span class="sr-only">Double gate mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:29" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Double gate mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/doublegate-mosfet-140213062608-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Double gate mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/doublegate-mosfet-140213062608-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Double gate mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Double gate mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R5mval4f6:" popovertarget=":R5mval4f6:" style="anchor-name:--popover-R5mval4f6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R5mval4f6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R5mval4f6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/951384">Pooja Shukla</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document summarizes the double-gate MOSFET transistor. It begins by describing the basic operation of a single-gate MOSFET and then discusses the scaling limitations of bulk MOSFETs, such as decreasing carrier mobility and threshold voltage rolloff as channel length decreases. It introduces the double-gate MOSFET as a way to better control the channel and reduce short-channel effects. Key features of the double-gate MOSFET include two gates that control the ultra-thin body channel and allow direct scaling to small channel lengths of 20nm or less. Fabricating double-gate MOSFETs using a silicon-on-insulator approach provides benefits like low leakage currents. The double gates provide improved performance</span></div></div><div class="" id=":Rval4f6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rval4f6"></div></div></div></div><div class="RelatedContent_root__29Np1"><div class="RelatedContent_wrapper__riU7l"><h2 class="Heading_heading__3MAvZ Heading_h2__f9yvs RelatedContent_title__QUhpL">More Related Content</h2><div class="bottom-recs BottomRecommendation_root__7aU9w"><h3 class="BottomRecommendation_title__SRj68">What's hot <span class="BottomRecommendation_count__4HpLo">(20)</span></h3><div class="BottomRecommendationContent_root__2qm4_"><div class="mobile-recs"><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-0" aria-haspopup="dialog" aria-controls=":R8b4pkf6:" popovertarget=":R8b4pkf6:" style="anchor-name:--popover-R8b4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/shudhanshu29/silicon-on-insulator-soi-technology"><span class="sr-only">Silicon on Insulator (SOI) Technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:0" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Silicon on Insulator (SOI) Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/soiss-171209180845-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Silicon on Insulator (SOI) Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/soiss-171209180845-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Silicon on Insulator (SOI) Technology</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Silicon on Insulator (SOI) Technology for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8b4pkf6:" popovertarget=":R2r8b4pkf6:" style="anchor-name:--popover-R2r8b4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8b4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8b4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/shudhanshu29">Sudhanshu Janwadkar</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This presentation discusses about the concept of SOI technology, Fabrication methods, applications, advantages and limitations of SOI technology.</span></div></div><div class="" id=":R8b4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8b4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-1" aria-haspopup="dialog" aria-controls=":R8j4pkf6:" popovertarget=":R8j4pkf6:" style="anchor-name:--popover-R8j4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-and-short-channel-effects/70379558"><span class="sr-only">MOSFET and Short channel effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:1" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOSFET and Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-161222172031-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOSFET and Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-161222172031-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">MOSFET and Short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOSFET and Short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8j4pkf6:" popovertarget=":R2r8j4pkf6:" style="anchor-name:--popover-R2r8j4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8j4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8j4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/MuzafarRather">Lee Rather</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.</span></div></div><div class="" id=":R8j4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8j4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-2" aria-haspopup="dialog" aria-controls=":R8r4pkf6:" popovertarget=":R8r4pkf6:" style="anchor-name:--popover-R8r4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/second-order-effects/89683801"><span class="sr-only">Second order effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:2" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Second order effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/secondordereffects-180305173314-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Second order effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/secondordereffects-180305173314-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Second order effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Second order effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8r4pkf6:" popovertarget=":R2r8r4pkf6:" style="anchor-name:--popover-R2r8r4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8r4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8r4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/rppvch">PRAVEEN KUMAR CHITLURI</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses four topics related to transistors: 1. Threshold voltage is the minimum gate voltage needed to create a conducting path between source and drain, and depends on oxide thickness, temperature, and random dopant fluctuations. 2. Latchup refers to a short circuit formed between power and ground rails in an integrated circuit, caused by interaction between parasitic bipolar transistors. 3. Electromigration is the forced movement of metal ions due to an electric field, with atoms traveling toward the positive conductor end and vacancies toward the negative end. 4. Mobility degradation occurs due to lateral and vertical electric fields scattering carriers, reducing surface mobility as channel lengths shrink.</span></div></div><div class="" id=":R8r4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8r4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-3" aria-haspopup="dialog" aria-controls=":R934pkf6:" popovertarget=":R934pkf6:" style="anchor-name:--popover-R934pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-soifet-and-finfet/236290962"><span class="sr-only">MOSFET, SOI-FET and FIN-FET-ABU SYED KUET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:3" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOSFET, SOI-FET and FIN-FET-ABU SYED KUET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetsoi-fetandfinfet-200627074207-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOSFET, SOI-FET and FIN-FET-ABU SYED KUET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetsoi-fetandfinfet-200627074207-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">MOSFET, SOI-FET and FIN-FET-ABU SYED KUET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOSFET, SOI-FET and FIN-FET-ABU SYED KUET for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r934pkf6:" popovertarget=":R2r934pkf6:" style="anchor-name:--popover-R2r934pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r934pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r934pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/syedsumon">A. S. M. Jannatul Islam</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document provides an overview of the history and scaling of transistors and integrated circuits. It discusses how vacuum tubes were replaced by transistors, with the first transistor invented in 1947 and the first integrated circuit in 1958. It describes how continuous scaling and improvements in silicon manufacturing have led to billions of transistors being integrated onto a single chip today. The document then discusses different transistor technologies, including MOSFETs, and how scaling to smaller sizes introduced challenges like short channel effects that new transistor designs like FinFETs help address.</span></div></div><div class="" id=":R934pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R934pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-4" aria-haspopup="dialog" aria-controls=":R9b4pkf6:" popovertarget=":R9b4pkf6:" style="anchor-name:--popover-R9b4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-transistors/247492683"><span class="sr-only">Finfet Transistors</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:4" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Finfet Transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettransistors-210501175258-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Finfet Transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettransistors-210501175258-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Finfet Transistors</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Finfet Transistors for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9b4pkf6:" popovertarget=":R2r9b4pkf6:" style="anchor-name:--popover-R2r9b4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9b4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9b4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/SmaeilJavadi">Esmaeil Javadi</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the history and advantages of FINFET transistors over traditional planar MOSFETs. It explains that as MOSFET feature sizes decreased below 20nm, short channel effects became a challenge to address. FINFETs were developed as a solution, using fin-shaped silicon channels that allow for better channel control and reduced short channel effects compared to planar MOSFETs. Key advantages of FINFETs include the ability to scale to smaller feature sizes like 7nm, significantly reduced power consumption, higher operating speeds, and greatly reduced static leakage current.</span></div></div><div class="" id=":R9b4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9b4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-5" aria-haspopup="dialog" aria-controls=":R9j4pkf6:" popovertarget=":R9j4pkf6:" style="anchor-name:--popover-R9j4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/introduction-to-vlsi/1398844"><span class="sr-only">Introduction to VLSI </span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:5" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Introduction to VLSI " src="https://cdn.slidesharecdn.com/ss_thumbnails/lecture-vlsi-090507042309-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Introduction to VLSI " src="https://cdn.slidesharecdn.com/ss_thumbnails/lecture-vlsi-090507042309-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Introduction to VLSI </span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Introduction to VLSI for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9j4pkf6:" popovertarget=":R2r9j4pkf6:" style="anchor-name:--popover-R2r9j4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9j4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9j4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/illpa">illpa</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document provides an overview of VLSI design for a course. It discusses topics including CMOS transistors and logic gates, VLSI levels of abstraction, the VLSI design process, design styles like full custom and ASIC, and trends like Moore's Law. The roadmap outlines topics to be covered like CMOS processing, combinational and sequential circuit design, and a design project to complete a chip. Course objectives are listed relating to VLSI analysis, layout design, and system design skills.</span></div></div><div class="" id=":R9j4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9j4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-6" aria-haspopup="dialog" aria-controls=":R9r4pkf6:" popovertarget=":R9r4pkf6:" style="anchor-name:--popover-R9r4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/ic-tech-unit-5-vlsi-process-integration/70256121"><span class="sr-only">Ic tech unit 5- VLSI Process Integration</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:6" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Ic tech unit 5- VLSI Process Integration" src="https://cdn.slidesharecdn.com/ss_thumbnails/ictechunit5-161219055549-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Ic tech unit 5- VLSI Process Integration" src="https://cdn.slidesharecdn.com/ss_thumbnails/ictechunit5-161219055549-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Ic tech unit 5- VLSI Process Integration</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Ic tech unit 5- VLSI Process Integration for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9r4pkf6:" popovertarget=":R2r9r4pkf6:" style="anchor-name:--popover-R2r9r4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9r4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9r4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/kritickasharma">kriticka sharma</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">junction oxide and isolation techniques, LOCOS, Metallization, NMOS and CMOS technology, FAult diagnosis</span></div></div><div class="" id=":R9r4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9r4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-7" aria-haspopup="dialog" aria-controls=":Ra34pkf6:" popovertarget=":Ra34pkf6:" style="anchor-name:--popover-Ra34pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/review-of-fin-fet-technology-and-circuit-design-challenges-62505971/62505971"><span class="sr-only">Review of Fin FET Technology and Circuit Design Challenges</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:7" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Review of Fin FET Technology and Circuit Design Challenges" src="https://cdn.slidesharecdn.com/ss_thumbnails/f496990c-5231-427b-8431-548cfe16ea67-160529074132-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Review of Fin FET Technology and Circuit Design Challenges" src="https://cdn.slidesharecdn.com/ss_thumbnails/f496990c-5231-427b-8431-548cfe16ea67-160529074132-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Review of Fin FET Technology and Circuit Design Challenges</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Review of Fin FET Technology and Circuit Design Challenges for later" role="switch" aria-haspopup="dialog" aria-controls=":R2ra34pkf6:" popovertarget=":R2ra34pkf6:" style="anchor-name:--popover-R2ra34pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2ra34pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2ra34pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/rbl87">rbl87</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">1. FinFET technology uses a fin-like gate structure to improve gate control and reduce leakage compared to planar CMOS. It allows continued transistor scaling beyond limits of planar devices. 2. There are manufacturing challenges for FinFETs including fin patterning and variability, doping, stress application, and parasitic capacitance. Circuit design challenges include adapting SRAM cells and EDA tools to the 3D FinFET structure. 3. FinFETs are now used for high performance logic but new materials and design approaches are still being explored to further improve FinFET technology and address remaining challenges in manufacturing and circuit design.</span></div></div><div class="" id=":Ra34pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Ra34pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-8" aria-haspopup="dialog" aria-controls=":Rab4pkf6:" popovertarget=":Rab4pkf6:" style="anchor-name:--popover-Rab4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/analog-design-cit-f/29991014"><span class="sr-only">Analog Layout design </span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:8" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Analog Layout design " src="https://cdn.slidesharecdn.com/ss_thumbnails/analogdesigncitf-140114022933-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Analog Layout design " src="https://cdn.slidesharecdn.com/ss_thumbnails/analogdesigncitf-140114022933-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Analog Layout design </span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Analog Layout design for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rab4pkf6:" popovertarget=":R2rab4pkf6:" style="anchor-name:--popover-R2rab4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rab4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rab4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/slpinjare">slpinjare</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document provides an overview of analog layout design. It discusses that analog circuits require careful attention to geometry during layout due to process variations. The analog design flow includes electrical design, physical design involving layout, and fabrication/testing. Key considerations for analog layout include minimizing parasitic resistances and capacitances, reducing noise, and ensuring matching between identical components using techniques like common-centroid layout. Resistors and capacitors must be carefully laid out to minimize non-ideal effects and provide accurate values.</span></div></div><div class="" id=":Rab4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rab4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-9" aria-haspopup="dialog" aria-controls=":Raj4pkf6:" popovertarget=":Raj4pkf6:" style="anchor-name:--popover-Raj4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/short-channel-effect-in-mosfet/30941570"><span class="sr-only">Short Channel Effect In MOSFET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:9" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Short Channel Effect In MOSFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetbest-140207060709-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Short Channel Effect In MOSFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetbest-140207060709-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Short Channel Effect In MOSFET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Short Channel Effect In MOSFET for later" role="switch" aria-haspopup="dialog" aria-controls=":R2raj4pkf6:" popovertarget=":R2raj4pkf6:" style="anchor-name:--popover-R2raj4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2raj4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2raj4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/SudhanshuSrivastava4">Sudhanshu Srivastava</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Know the versatile knowledge about MOSFET, it is the analysis at small level as short channeling in MOSFET</span></div></div><div class="" id=":Raj4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Raj4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-10" aria-haspopup="dialog" aria-controls=":Rar4pkf6:" popovertarget=":Rar4pkf6:" style="anchor-name:--popover-Rar4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-tsmcpdf/256174061"><span class="sr-only">finfet tsmc.pdf</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:10" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="finfet tsmc.pdf" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfrttsmc-230301080402-e61fe530-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="finfet tsmc.pdf" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfrttsmc-230301080402-e61fe530-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">finfet tsmc.pdf</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save finfet tsmc.pdf for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rar4pkf6:" popovertarget=":R2rar4pkf6:" style="anchor-name:--popover-R2rar4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rar4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rar4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/MANSISHEKHAWAT3">MANSISHEKHAWAT3</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document is a tutorial on circuit design using FinFETs presented at the 2013 IEEE International Solid-State Circuits Conference by Bing Sheu from TSMC. The tutorial covers technology considerations of FinFETs including their electrostatics benefits, SPICE modeling using the BSIM-CMG model, digital and memory circuit design methodology, and applications to analog/mixed-signal circuits. The document provides details on FinFET device structures, parasitic capacitances, scaling techniques, and performance comparisons to planar MOSFETs.</span></div></div><div class="" id=":Rar4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rar4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-11" aria-haspopup="dialog" aria-controls=":Rb34pkf6:" popovertarget=":Rb34pkf6:" style="anchor-name:--popover-Rb34pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/vlsi-design-11/76610343"><span class="sr-only">Vlsi design 11</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:11" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Vlsi design 11" src="https://cdn.slidesharecdn.com/ss_thumbnails/vlsibasics11-170603064924-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Vlsi design 11" src="https://cdn.slidesharecdn.com/ss_thumbnails/vlsibasics11-170603064924-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Vlsi design 11</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Vlsi design 11 for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rb34pkf6:" popovertarget=":R2rb34pkf6:" style="anchor-name:--popover-R2rb34pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rb34pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rb34pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/hdiwakar">HIMANSHU DIWAKAR</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses the basics of Very Large Scale Integration (VLSI) design. It begins with a brief history of transistors and integrated circuits. It then covers Moore's Law and the evolution of logic complexity in integrated circuits from single transistors to today's ultra-large scale integration. The rest of the document discusses VLSI design methodologies, including the design flow from behavioral to layout representations using a Y-chart. It emphasizes concepts like regularity, modularity, and locality to manage complexity in VLSI designs.</span></div></div><div class="" id=":Rb34pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rb34pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-12" aria-haspopup="dialog" aria-controls=":Rbb4pkf6:" popovertarget=":Rbb4pkf6:" style="anchor-name:--popover-Rbb4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/short-channel-effects-115332110/115332110"><span class="sr-only">Short channel effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:12" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchanneleffects-180919050414-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchanneleffects-180919050414-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbb4pkf6:" popovertarget=":R2rbb4pkf6:" style="anchor-name:--popover-R2rbb4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbb4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbb4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/aditiagrawal97">aditiagrawal97</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses short channel effects that occur in MOSFET devices when the channel length decreases to the same order of magnitude as the source/drain junction depth. It describes five main short channel effects: drain induced barrier lowering, drain punch through, velocity saturation, impact ionization, and hot electron effects. For each effect, it provides an explanation of the physical phenomenon and how it impacts device performance as the channel length decreases. It concludes by listing three references for further reading on leakage current mechanisms and MOSFET modeling.</span></div></div><div class="" id=":Rbb4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbb4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-13" aria-haspopup="dialog" aria-controls=":Rbj4pkf6:" popovertarget=":Rbj4pkf6:" style="anchor-name:--popover-Rbj4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mos-transistor-13/76610396"><span class="sr-only">MOS transistor 13</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:13" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOS transistor 13" src="https://cdn.slidesharecdn.com/ss_thumbnails/mostransistor13-170603065326-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOS transistor 13" src="https://cdn.slidesharecdn.com/ss_thumbnails/mostransistor13-170603065326-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">MOS transistor 13</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOS transistor 13 for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbj4pkf6:" popovertarget=":R2rbj4pkf6:" style="anchor-name:--popover-R2rbj4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbj4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbj4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/hdiwakar">HIMANSHU DIWAKAR</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the structure and operation of MOS transistors. It describes the basic MOS structure which consists of a metal gate separated from a semiconductor substrate by an oxide layer. Applying a voltage to the gate can induce an inversion layer in the semiconductor to form a channel between the source and drain, allowing current to flow. The threshold voltage is the minimum gate voltage required to form an inversion layer. The document discusses n-channel MOSFETs and their characteristics in different regions of operation defined by the gate-source voltage.</span></div></div><div class="" id=":Rbj4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbj4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-14" aria-haspopup="dialog" aria-controls=":Rbr4pkf6:" popovertarget=":Rbr4pkf6:" style="anchor-name:--popover-Rbr4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-65416347/65416347"><span class="sr-only">Mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:14" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/maa2-160827103000-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/maa2-160827103000-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbr4pkf6:" popovertarget=":R2rbr4pkf6:" style="anchor-name:--popover-R2rbr4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbr4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbr4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/MdNahidSarker">Md. Nahid Sarker</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes the MOSFET as a four-terminal device (gate, drain, source, body) that is commonly used as a three-terminal device by connecting the body and source terminals. The MOSFET is the most common transistor in digital and analog circuits. Silicon is typically used as the semiconductor, though some manufacturers are using silicon-germanium compounds. Research continues on using other semiconductor materials that form good interfaces with insulators.</span></div></div><div class="" id=":Rbr4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbr4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-15" aria-haspopup="dialog" aria-controls=":Rc34pkf6:" popovertarget=":Rc34pkf6:" style="anchor-name:--popover-Rc34pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/bgr-57274715/57274715"><span class="sr-only">BGR</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:15" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="BGR" src="https://cdn.slidesharecdn.com/ss_thumbnails/fe67e1bd-c993-4e70-9b81-ab711473d201-160120124327-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="BGR" src="https://cdn.slidesharecdn.com/ss_thumbnails/fe67e1bd-c993-4e70-9b81-ab711473d201-160120124327-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">BGR</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save BGR for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rc34pkf6:" popovertarget=":R2rc34pkf6:" style="anchor-name:--popover-R2rc34pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rc34pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rc34pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/lingadharreddy">lingadhar reddy</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document describes the implementation of a bandgap reference circuit. It begins by acknowledging those who supported the project. It then provides an abstract stating that bandgap reference circuits are used to generate stable reference voltages and currents on integrated circuits. The main goal of the project was to understand bandgap reference design and limitations, and implement a bandgap reference circuit in a 90nm CMOS technology using CADENCE.</span></div></div><div class="" id=":Rc34pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rc34pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-16" aria-haspopup="dialog" aria-controls=":Rcb4pkf6:" popovertarget=":Rcb4pkf6:" style="anchor-name:--popover-Rcb4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/NaveenKumar11/vlsi-routing"><span class="sr-only">VLSI routing</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:16" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="VLSI routing" src="https://cdn.slidesharecdn.com/ss_thumbnails/naveenrouting-120531015504-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="VLSI routing" src="https://cdn.slidesharecdn.com/ss_thumbnails/naveenrouting-120531015504-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">VLSI routing</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save VLSI routing for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcb4pkf6:" popovertarget=":R2rcb4pkf6:" style="anchor-name:--popover-R2rcb4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcb4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcb4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/NaveenKumar11">Naveen Kumar</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Routing in Integrated circuits is an important task which requires extreme care while placing the modules and circuits and connecting them with each other.</span></div></div><div class="" id=":Rcb4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcb4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-17" aria-haspopup="dialog" aria-controls=":Rcj4pkf6:" popovertarget=":Rcj4pkf6:" style="anchor-name:--popover-Rcj4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/gaa-nano-wire-fet/64700230"><span class="sr-only">GAA nano wire FET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:17" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="GAA nano wire FET" src="https://cdn.slidesharecdn.com/ss_thumbnails/20nmnwt1312088-160804141816-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="GAA nano wire FET" src="https://cdn.slidesharecdn.com/ss_thumbnails/20nmnwt1312088-160804141816-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">GAA nano wire FET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save GAA nano wire FET for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcj4pkf6:" popovertarget=":R2rcj4pkf6:" style="anchor-name:--popover-R2rcj4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcj4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcj4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/jdkaushik">Jaidev Kaushik</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document summarizes the design and performance analysis of 20nm silicon/germanium channel pentagonal and trapezoidal nanowire transistors. It presents the objectives of designing these nanowire transistors with different process parameters like diameter and height. The methodology involves using TCAD software to simulate the transfer characteristics, output characteristics, and short channel effects for different cross-sectional shapes and materials. The results show that pentagonal and trapezoidal nanowire transistors with germanium channels exhibit higher on-currents and on/off current ratios than triangular nanowire transistors. Key performance metrics like subthreshold swing and DIBL are also better for the pentagonal and trapezoidal nanowire transistors.</span></div></div><div class="" id=":Rcj4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcj4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-18" aria-haspopup="dialog" aria-controls=":Rcr4pkf6:" popovertarget=":Rcr4pkf6:" style="anchor-name:--popover-Rcr4pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-short-channel-effects/111603432"><span class="sr-only">Mosfet short channel effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:18" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Mosfet short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-180826085922-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Mosfet short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-180826085922-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Mosfet short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Mosfet short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcr4pkf6:" popovertarget=":R2rcr4pkf6:" style="anchor-name:--popover-R2rcr4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcr4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcr4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/BalaGopi1">kesana Bala Gopi</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Short channel effects arise when the channel length of a MOSFET becomes comparable to the depletion layer width. This causes unwanted effects such as drain-induced barrier lowering (DIBL), where the drain voltage lowers the channel potential barrier; surface scattering, where carriers collide with the surface increasing; and velocity saturation, where the electric field saturates the carrier drift velocity. Other effects are impact ionization, where high-energy carriers generate electron-hole pairs, and hot carrier injection (HCI). Short channel effects degrade performance and reliability in smaller transistors.</span></div></div><div class="" id=":Rcr4pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcr4pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="whatsHot-card-description-19" aria-haspopup="dialog" aria-controls=":Rd34pkf6:" popovertarget=":Rd34pkf6:" style="anchor-name:--popover-Rd34pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/group-1finfet-finalpptx/263285611"><span class="sr-only">Group 1_FinFET Final.pptx</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:19" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Group 1_FinFET Final.pptx" src="https://cdn.slidesharecdn.com/ss_thumbnails/group1finfetfinal-231111081621-ba332891-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Group 1_FinFET Final.pptx" src="https://cdn.slidesharecdn.com/ss_thumbnails/group1finfetfinal-231111081621-ba332891-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Group 1_FinFET Final.pptx</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Group 1_FinFET Final.pptx for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rd34pkf6:" popovertarget=":R2rd34pkf6:" style="anchor-name:--popover-R2rd34pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rd34pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rd34pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/PrashantKashyap83">PrashantKashyap83</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses FinFET transistors. It provides a history of FinFET development starting in 1998. FinFETs were created to allow Moore's Law to continue by addressing short channel effects in traditional planar MOSFETs as devices continued scaling. FinFETs use a fin-like gate structure to improve gate control and reduce leakage currents. The document outlines FinFET structure, characteristics, fabrication process, advantages, applications and the future of FinFET technology as it aims to scale below 5nm.</span></div></div><div class="" id=":Rd34pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rd34pkf6"></div></div><div class="desktop-recs"><div class="Slider_root__c0Jo8"><div class="Slider_scroller__KHjw4"><div class="BottomRecommendationCard_root__gffTk SlideshowCard_root__pD8t4 slideshow-card"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/shudhanshu29/silicon-on-insulator-soi-technology"><span class="sr-only">Silicon on Insulator (SOI) Technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:16 / 9;--index:0" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" 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and Short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOSFET and Short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":Rb2d4pkf6:" popovertarget=":Rb2d4pkf6:" style="anchor-name:--popover-Rb2d4pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":Rb2d4pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-Rb2d4pkf6"></div><a class="SlideshowAuthor_root__IkT1_ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" 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technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:0" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="finfet & dg-fet technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/assignment-141125135646-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="finfet & dg-fet technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/assignment-141125135646-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">finfet & dg-fet technology</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save finfet & dg-fet technology for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8b59kf6:" popovertarget=":R2r8b59kf6:" style="anchor-name:--popover-R2r8b59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8b59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8b59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/kmaggu1">Kritika Ramesh</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">FINFETs were developed to address issues with traditional MOSFETs as components continue to shrink, including short channel effects and higher leakage currents. FINFETs utilize a fin-like structure with a gate on three sides to improve control over the channel and suppress short channel effects. This allows for better scaling to smaller sizes while maintaining performance and lowering power consumption compared to planar MOSFETs and dual-gate devices.</span></div></div><div class="" id=":R8b59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8b59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-1" aria-haspopup="dialog" aria-controls=":R8j59kf6:" popovertarget=":R8j59kf6:" style="anchor-name:--popover-R8j59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/double-gate-mosfet/31166224"><span class="sr-only">Double gate mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:1" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Double gate mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/doublegate-mosfet-140213062608-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Double gate mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/doublegate-mosfet-140213062608-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Double gate mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Double gate mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8j59kf6:" popovertarget=":R2r8j59kf6:" style="anchor-name:--popover-R2r8j59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8j59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8j59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/951384">Pooja Shukla</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document summarizes the double-gate MOSFET transistor. It begins by describing the basic operation of a single-gate MOSFET and then discusses the scaling limitations of bulk MOSFETs, such as decreasing carrier mobility and threshold voltage rolloff as channel length decreases. It introduces the double-gate MOSFET as a way to better control the channel and reduce short-channel effects. Key features of the double-gate MOSFET include two gates that control the ultra-thin body channel and allow direct scaling to small channel lengths of 20nm or less. Fabricating double-gate MOSFETs using a silicon-on-insulator approach provides benefits like low leakage currents. The double gates provide improved performance</span></div></div><div class="" id=":R8j59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8j59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-2" aria-haspopup="dialog" aria-controls=":R8r59kf6:" popovertarget=":R8r59kf6:" style="anchor-name:--popover-R8r59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/sushant/11338850"><span class="sr-only">Sushant</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:2" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Sushant" src="https://cdn.slidesharecdn.com/ss_thumbnails/sushant-1327951518-phpapp02-120130132616-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Sushant" src="https://cdn.slidesharecdn.com/ss_thumbnails/sushant-1327951518-phpapp02-120130132616-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Sushant</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Sushant for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8r59kf6:" popovertarget=":R2r8r59kf6:" style="anchor-name:--popover-R2r8r59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8r59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8r59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/sushantmishra94">Sushant Mishra</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">1. FinFETs allow for independent control of transistor gates, enabling new low-power circuit techniques like unusual logic styles and dual-Vdd circuits. 2. Simulation shows these FinFET circuit techniques can reduce total power consumption in ISCAS'85 benchmarks by up to 80% compared to traditional static CMOS designs. 3. FinFETs also enable architectural optimizations like variation-tolerant SRAM and novel non-volatile reconfigurable logic that could provide over an order of magnitude improvements in density and performance.</span></div></div><div class="" id=":R8r59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8r59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-3" aria-haspopup="dialog" aria-controls=":R9359kf6:" popovertarget=":R9359kf6:" style="anchor-name:--popover-R9359kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/short-channel-effects/50101267"><span class="sr-only">Short channel effects</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:3" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchanneleffects-150702160957-lva1-app6892-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Short channel effects" src="https://cdn.slidesharecdn.com/ss_thumbnails/shortchanneleffects-150702160957-lva1-app6892-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Short channel effects</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Short channel effects for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9359kf6:" popovertarget=":R2r9359kf6:" style="anchor-name:--popover-R2r9359kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9359kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9359kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/ashishbait">ashish bait</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Here are the all short channel effects that you require.It consist of:- Drain Induced Barrier Lowering Hot electron Effect Impact Ionization Surface Scattering Velocity saturation</span></div></div><div class="" id=":R9359kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9359kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-4" aria-haspopup="dialog" aria-controls=":R9b59kf6:" popovertarget=":R9b59kf6:" style="anchor-name:--popover-R9b59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-7458581/7458581"><span class="sr-only">Mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:4" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfet-110331033100-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfet-110331033100-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9b59kf6:" popovertarget=":R2r9b59kf6:" style="anchor-name:--popover-R2r9b59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9b59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9b59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/Thenmurugeshwari">Then Murugeshwari</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device that is commonly used in power electronics. It works by modulating charge concentration between a gate electrode, which is insulated from other device regions by an oxide layer, and a body region. Depending on whether it is an n-channel or p-channel MOSFET, the source and drain regions have either n+ or p+ doping while the body has the opposite doping. Applying a voltage to the gate can turn the channel between source and drain on or off to allow or prevent current flow. MOSFETs can be made with silicon on insulator or other semiconductor materials.</span></div></div><div class="" id=":R9b59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9b59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-5" aria-haspopup="dialog" aria-controls=":R9j59kf6:" popovertarget=":R9j59kf6:" style="anchor-name:--popover-R9j59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/metal-oxide-semiconductor-fet-mosfet-1583661/1583661"><span class="sr-only">Metal Oxide Semiconductor Fet (Mosfet)</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:5" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Metal Oxide Semiconductor Fet (Mosfet)" src="https://cdn.slidesharecdn.com/ss_thumbnails/metal-oxide-semiconductorfetmosfet-090615015822-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Metal Oxide Semiconductor Fet (Mosfet)" src="https://cdn.slidesharecdn.com/ss_thumbnails/metal-oxide-semiconductorfetmosfet-090615015822-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Metal Oxide Semiconductor Fet (Mosfet)</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Metal Oxide Semiconductor Fet (Mosfet) for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9j59kf6:" popovertarget=":R2r9j59kf6:" style="anchor-name:--popover-R2r9j59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9j59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9j59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/stootypal">stooty s</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses different types of field effect transistors (FETs), including junction FETs (JFETs), metal-oxide-semiconductor FETs (MOSFETs), and metal-semiconductor FETs (MESFETs). It focuses on the structure and operation of n-channel and p-channel MOSFETs, describing how a positive or negative gate voltage is used to create a conducting channel. Scaling challenges for MOSFETs are also discussed, along with new materials needed like high-k dielectrics and metal gates, and approaches like silicon-on-insulator (SOI) technology.</span></div></div><div class="" id=":R9j59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9j59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-6" aria-haspopup="dialog" aria-controls=":R9r59kf6:" popovertarget=":R9r59kf6:" style="anchor-name:--popover-R9r59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-tech/51973360"><span class="sr-only">Finfet tech</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:6" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Finfet tech" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettech-150823152031-lva1-app6892-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Finfet tech" src="https://cdn.slidesharecdn.com/ss_thumbnails/finfettech-150823152031-lva1-app6892-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Finfet tech</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Finfet tech for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9r59kf6:" popovertarget=":R2r9r59kf6:" style="anchor-name:--popover-R2r9r59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9r59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9r59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/neela458">neela458</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the evolution of MOSFET devices as channel lengths have decreased. Conventional bulk MOSFETs face physical limits controlling doping density, short channel effects, and gate oxide thinning. Alternative structures like partially depleted (PD) and fully depleted (FD) silicon-on-insulator (SOI) devices have emerged to extend scaling. PD SOI was initially adopted due to processing similarities to bulk devices. It offers advantages like reduced junction capacitance and dynamic threshold switching but requires addressing the floating body effect and hysteretic threshold variations.</span></div></div><div class="" id=":R9r59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9r59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-7" aria-haspopup="dialog" aria-controls=":Ra359kf6:" popovertarget=":Ra359kf6:" style="anchor-name:--popover-Ra359kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/analog-mixedsignal-design-in-finfet-processes/45172857"><span class="sr-only">Analog Mixed-Signal Design in FinFET Processes </span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:7" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Analog Mixed-Signal Design in FinFET Processes " src="https://cdn.slidesharecdn.com/ss_thumbnails/2-24-15-aimeecadence-webinar-150226070438-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Analog Mixed-Signal Design in FinFET Processes " src="https://cdn.slidesharecdn.com/ss_thumbnails/2-24-15-aimeecadence-webinar-150226070438-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Analog Mixed-Signal Design in FinFET Processes </span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Analog Mixed-Signal Design in FinFET Processes for later" role="switch" aria-haspopup="dialog" aria-controls=":R2ra359kf6:" popovertarget=":R2ra359kf6:" style="anchor-name:--popover-R2ra359kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2ra359kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2ra359kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/DesignWorldOnline">Design World</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">While industry pundits have forecasted the end of analog design in the next leading edge process, the reality is that the practice is still going strong, and there’s no end in sight. Not only are teams still designing data converters, PLLs, filters, and other analog goodies in the latest processes (including FinFET), but design teams are reaching higher levels of performance than they did in yesterday’s processes. The new processes have, without a doubt, changed the task of analog design, and the designer’s toolkit has had to undergo a major revision. Many of our old techniques have become a lot less relevant, and today’s designer needs to have a good handle on a broad set of new techniques. Some of the changes are a result of designers targeting processes for very digital applications (supply voltages of 0.8V and less). Others are a result of the size of the devices (matching of small devices is poor, matching of very small devices is worse). Changes are also a result of the new fabrication techniques that must be used to make the devices (unit-sized devices and no mixing of different device types - resistor and I/O device ghettos are required). Of course, there’s great news: the transistors are wonderfully fast and the digital is almost free. View this webinar to: -Gain an understanding of the challenges of analog design in the new world of leading-edge processes -Learn about design techniques that take advantage of the characteristics of today’s design reality</span></div></div><div class="" id=":Ra359kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Ra359kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-8" aria-haspopup="dialog" aria-controls=":Rab59kf6:" popovertarget=":Rab59kf6:" style="anchor-name:--popover-Rab59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/veeranagoud/13070992"><span class="sr-only">veeranagoud</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:8" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="veeranagoud" src="https://cdn.slidesharecdn.com/ss_thumbnails/1mosfet-1basics1-120525024507-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="veeranagoud" src="https://cdn.slidesharecdn.com/ss_thumbnails/1mosfet-1basics1-120525024507-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">veeranagoud</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save veeranagoud for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rab59kf6:" popovertarget=":R2rab59kf6:" style="anchor-name:--popover-R2rab59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rab59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rab59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/veeranagoud1">Veeranagoud Patil</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses MOSFETs (metal-oxide-semiconductor field-effect transistors). MOSFETs are the most common type of transistor, making up over 99% of all integrated circuits. They consist of metal, silicon dioxide (an insulator), and silicon. The basic principle is that the current flowing between the source and drain is controlled by the voltage applied to the gate. When a positive voltage is applied, it induces a channel of electrons or holes to flow. MOSFETs can be either n-channel or p-channel depending on if electrons or holes are used. Connecting an n-channel and p-channel MOSFET in series results in a CMOS (complementary MOS)</span></div></div><div class="" id=":Rab59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rab59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-9" aria-haspopup="dialog" aria-controls=":Raj59kf6:" popovertarget=":Raj59kf6:" style="anchor-name:--popover-Raj59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/aicd-cmos-layouts/25852602"><span class="sr-only">Aicd cmos layouts</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:9" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Aicd cmos layouts" src="https://cdn.slidesharecdn.com/ss_thumbnails/aicdcmoslayouts-130903111747--thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Aicd cmos layouts" src="https://cdn.slidesharecdn.com/ss_thumbnails/aicdcmoslayouts-130903111747--thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Aicd cmos layouts</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Aicd cmos layouts for later" role="switch" aria-haspopup="dialog" aria-controls=":R2raj59kf6:" popovertarget=":R2raj59kf6:" style="anchor-name:--popover-R2raj59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2raj59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2raj59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/np270290">Neha Pachauri</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses analog integrated circuit layout techniques. It covers topics like design rules, unit component design, boundary condition matching using common centroid layout, and reducing mismatches. Specific circuit elements discussed include MOS transistors, capacitors, and resistors. Layout techniques to reduce parasitic capacitances and handle over-etching errors are presented. Fingered device layouts and calculating parasitic capacitances of MOS devices are also summarized.</span></div></div><div class="" id=":Raj59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Raj59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-10" aria-haspopup="dialog" aria-controls=":Rar59kf6:" popovertarget=":Rar59kf6:" style="anchor-name:--popover-Rar59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/lect10analog-layout-and-process-concern-presentation/763265"><span class="sr-only">Lect10_Analog Layout and Process Concern</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:10" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Lect10_Analog Layout and Process Concern" src="https://cdn.slidesharecdn.com/ss_thumbnails/lect10analog-layout-and-process-concern-1226994618740968-8-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Lect10_Analog Layout and Process Concern" src="https://cdn.slidesharecdn.com/ss_thumbnails/lect10analog-layout-and-process-concern-1226994618740968-8-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Lect10_Analog Layout and Process Concern</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Lect10_Analog Layout and Process Concern for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rar59kf6:" popovertarget=":R2rar59kf6:" style="anchor-name:--popover-R2rar59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rar59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rar59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/vein">vein</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">1. The document discusses the process for designing and fabricating analog integrated circuits using CMOS technology. It covers topics like MOS transistor operation, CMOS fabrication process steps, and SPICE device modeling parameters. 2. The CMOS fabrication process involves growing gate oxides, depositing polysilicon gates, implanting sources and drains, and depositing multiple metal interconnect layers. 3. SPICE device models are needed to simulate the behavior of transistors and circuits during the design process prior to fabrication. Device parameters are provided for a 0.8 micron CMOS process.</span></div></div><div class="" id=":Rar59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rar59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-11" aria-haspopup="dialog" aria-controls=":Rb359kf6:" popovertarget=":Rb359kf6:" style="anchor-name:--popover-Rb359kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/chetankataria986/tri-gate-transistors"><span class="sr-only">tri gate transistors</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:11" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="tri gate transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/presentation1-150110040038-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="tri gate transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/presentation1-150110040038-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">tri gate transistors</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save tri gate transistors for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rb359kf6:" popovertarget=":R2rb359kf6:" style="anchor-name:--popover-R2rb359kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rb359kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rb359kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/chetankataria986">Chetan Kataria</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the history and development of transistors from their invention in 1947 to modern 3D transistors. It describes how Moore's Law of transistor scaling led to the development of 3D tri-gate transistors to overcome limitations of planar transistors. The document explains how 3D transistors provide better performance than planar transistors through conducting channels on three sides of a vertical fin structure. It discusses the construction, operation, benefits and challenges of integrating 3D transistors into mainstream manufacturing.</span></div></div><div class="" id=":Rb359kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rb359kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-12" aria-haspopup="dialog" aria-controls=":Rbb59kf6:" popovertarget=":Rbb59kf6:" style="anchor-name:--popover-Rbb59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/3d-or-trigate-transistors/27894215"><span class="sr-only">3D or Tri-gate transistors</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:12" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="3D or Tri-gate transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/3dtransistors-131104120433-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="3D or Tri-gate transistors" src="https://cdn.slidesharecdn.com/ss_thumbnails/3dtransistors-131104120433-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">3D or Tri-gate transistors</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save 3D or Tri-gate transistors for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbb59kf6:" popovertarget=":R2rbb59kf6:" style="anchor-name:--popover-R2rbb59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbb59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbb59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/Kman12">Karanvir Singh</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses 3D transistors, which employ a single gate stacked on top of two vertical gates to allow three times the surface area for electron flow without increasing gate size. This overcomes issues with further scaling planar transistors. 3D transistors provide fully depleted operation and tighter channel control through conducting channels on three sides of a vertical fin. This enables high drive currents and improved switching performance. 3D transistors can operate at lower voltages than planar transistors, reducing power consumption by over 50% while maintaining or improving performance. They will allow continued transistor scaling per Moore's Law and are needed for future generations of chips.</span></div></div><div class="" id=":Rbb59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbb59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-13" aria-haspopup="dialog" aria-controls=":Rbj59kf6:" popovertarget=":Rbj59kf6:" style="anchor-name:--popover-Rbj59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/soi-61262146/61262146"><span class="sr-only">SOI</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:13" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="SOI" src="https://cdn.slidesharecdn.com/ss_thumbnails/aa8e72c0-f6e3-495b-a898-b32d4772b0b8-160423091329-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="SOI" src="https://cdn.slidesharecdn.com/ss_thumbnails/aa8e72c0-f6e3-495b-a898-b32d4772b0b8-160423091329-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">SOI</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save SOI for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbj59kf6:" popovertarget=":R2rbj59kf6:" style="anchor-name:--popover-R2rbj59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbj59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbj59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/KASHISHGROVER3">KASHISH GROVER</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses silicon on insulator (SOI) technology. It begins by defining SOI as using a layered silicon-insulator-silicon substrate instead of conventional silicon substrates in semiconductor manufacturing. It then explains the differences between bulk silicon MOSFETs and SOI MOSFETs. The document discusses several manufacturing methods for SOI, including SIMOX, wafer bonding, and Smart Cut. It also covers the benefits of SOI such as lower parasitic capacitance and resistance to latch-up. Finally, it distinguishes between partially depleted SOI and fully depleted SOI devices.</span></div></div><div class="" id=":Rbj59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbj59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-14" aria-haspopup="dialog" aria-controls=":Rbr59kf6:" popovertarget=":Rbr59kf6:" style="anchor-name:--popover-Rbr59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/vlsi-design-mosfet/15839568"><span class="sr-only">Vlsi design mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:14" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Vlsi design mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/vlsidesignmosfet-130103055520-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Vlsi design mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/vlsidesignmosfet-130103055520-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Vlsi design mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Vlsi design mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbr59kf6:" popovertarget=":R2rbr59kf6:" style="anchor-name:--popover-R2rbr59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbr59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbr59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/vennila12">vennila12</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only"> Here are the key points about NMOS transistor operation in the subthreshold region: - When 0 < Vgs < Vt, a depletion region forms in the channel due to the electric field repelling majority carriers (holes). - This depletion region means there are no carriers to conduct current through the channel. - Only a small leakage current flows, as the channel is not fully "turned on". - The transistor is not fully on or off in this region - it is said to be weakly inverted. Current has an exponential relationship with Vgs. - Some applications exploit this behavior for very low power analog/digital circuits. So in summary, a small current flows due to weak inversion in the</span></div></div><div class="" id=":Rbr59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbr59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-15" aria-haspopup="dialog" aria-controls=":Rc359kf6:" popovertarget=":Rc359kf6:" style="anchor-name:--popover-Rc359kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/3d-transistor/38587605"><span class="sr-only">3d transistor</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:15" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="3d transistor" src="https://cdn.slidesharecdn.com/ss_thumbnails/3dtransistor-140902015259-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="3d transistor" src="https://cdn.slidesharecdn.com/ss_thumbnails/3dtransistor-140902015259-phpapp01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">3d transistor</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save 3d transistor for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rc359kf6:" popovertarget=":R2rc359kf6:" style="anchor-name:--popover-R2rc359kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rc359kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rc359kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/swatikamat">swatikamat</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses the evolution of transistor technology, focusing on the development of tri-gate transistors. It describes how tri-gate transistors allow Moore's Law to continue by addressing issues like short channel effects that arise at smaller scales. The document outlines different types of multigate transistors and explains the advantages of tri-gate transistors, such as reduced power dissipation and better control over leakage current. It also provides some examples of how small 22nm transistors are in comparison to everyday objects.</span></div></div><div class="" id=":Rc359kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rc359kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-16" aria-haspopup="dialog" aria-controls=":Rcb59kf6:" popovertarget=":Rcb59kf6:" style="anchor-name:--popover-Rcb59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/dsvidhya/3673-mosfet"><span class="sr-only">3673 mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:16" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="3673 mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/3673mosfet-150528123937-lva1-app6891-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="3673 mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/3673mosfet-150528123937-lva1-app6891-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">3673 mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save 3673 mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcb59kf6:" popovertarget=":R2rcb59kf6:" style="anchor-name:--popover-R2rcb59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcb59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcb59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/dsvidhya">vidhya DS</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document discusses the MOS transistor and its operation. It begins by describing the components and structure of the MOS transistor, including the polysilicon gate, aluminum contacts, and silicon dioxide layer. It then discusses the energy band diagrams and how applying different gate voltages results in accumulation, depletion, or inversion at the surface. The document also covers the threshold voltage, its dependence on factors like doping and oxide thickness, and its impact on MOSFET operation. It concludes by deriving the MOSFET drain current equation using the gradual channel approximation approach.</span></div></div><div class="" id=":Rcb59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcb59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-17" aria-haspopup="dialog" aria-controls=":Rcj59kf6:" popovertarget=":Rcj59kf6:" style="anchor-name:--popover-Rcj59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-and-jfet/47696404"><span class="sr-only">MOSFET AND JFET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:17" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOSFET AND JFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/basicelecronis-150503085738-conversion-gate01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOSFET AND JFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/basicelecronis-150503085738-conversion-gate01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">MOSFET AND JFET</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save MOSFET AND JFET for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcj59kf6:" popovertarget=":R2rcj59kf6:" style="anchor-name:--popover-R2rcj59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcj59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcj59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/SumairHassan">Sumair Hassan</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses MOSFETs and JFETs. It introduces MOSFETs, describing the metal oxide layer and how the electric field controls current. It describes types of MOSFETs and their applications, particularly as switches. Characteristic curves of MOSFETs are also mentioned. The document then introduces JFETs, describing their structure and operation. Applications of JFETs as switches are provided. Advantages and disadvantages of JFETs are listed. Finally, characteristics curves of JFETs, including output and transfer characteristics, are described.</span></div></div><div class="" id=":Rcj59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcj59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-18" aria-haspopup="dialog" aria-controls=":Rcr59kf6:" popovertarget=":Rcr59kf6:" style="anchor-name:--popover-Rcr59kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/memristor-3024732/3024732"><span class="sr-only">memristor</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:18" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="memristor" src="https://cdn.slidesharecdn.com/ss_thumbnails/memory-100129112959-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="memristor" src="https://cdn.slidesharecdn.com/ss_thumbnails/memory-100129112959-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">memristor</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save memristor for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcr59kf6:" popovertarget=":R2rcr59kf6:" style="anchor-name:--popover-R2rcr59kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcr59kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcr59kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/jithoot">jithoot</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The memristor is a two-terminal electronic component theorized in 1971 as a fourth fundamental circuit element. In 2008, HP Labs created the first physical memristor using titanium dioxide. Memristors behave similarly to synapses in the brain and could be used to build artificial neural networks for applications like neuromorphic computing and non-volatile memory. Major companies and research institutions are now working to further develop memristors and explore their potential applications in the future.</span></div></div><div class="" id=":Rcr59kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcr59kf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="alsoLiked-card-description-19" aria-haspopup="dialog" aria-controls=":Rd359kf6:" popovertarget=":Rd359kf6:" style="anchor-name:--popover-Rd359kf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-30532061/30532061"><span class="sr-only">Mosfet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:19" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfet-140128071402-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Mosfet" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfet-140128071402-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Mosfet</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Mosfet for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rd359kf6:" popovertarget=":R2rd359kf6:" style="anchor-name:--popover-R2rd359kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rd359kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rd359kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/951384">Pooja Shukla</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document provides an introduction to transistors and MOSFETs. It begins by describing the invention of the transistor in 1947 and defining what a transistor is. It then discusses the main types of transistors - BJT and FET, including MOSFET and JFET. The rest of the document focuses on MOSFETs, explaining what they are, their terminals and symbols, types of MOSFETs like n-MOSFET and p-MOSFET, and how MOSFETs work and are fabricated through processes like photolithography, etching, diffusion, and oxidation. It includes diagrams of MOSFET structure and operation. In the end it briefly discusses CMOS fabrication process flow.</span></div></div><div class="" id=":Rd359kf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rd359kf6"></div></div><div class="desktop-recs"><div class="Slider_root__c0Jo8"><div class="Slider_scroller__KHjw4"><div class="BottomRecommendationCard_root__gffTk SlideshowCard_root__pD8t4 slideshow-card"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/finfet-dgfet/42016838"><span class="sr-only">finfet & dg-fet technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:16 / 9;--index:0" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="finfet & dg-fet technology" 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href="https://www.slideshare.net/dsvidhya">vidhya DS</a><div class="slideshow-stats SlideshowStats_root__EQOR1"> </div></div></div><div class="BottomRecommendationCard_root__gffTk SlideshowCard_root__pD8t4 slideshow-card"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/mosfet-and-jfet/47696404"><span class="sr-only">MOSFET AND JFET</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:16 / 9;--index:17" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="MOSFET AND JFET" src="https://cdn.slidesharecdn.com/ss_thumbnails/basicelecronis-150503085738-conversion-gate01-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="MOSFET AND JFET" 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class="BottomRecommendation_count__4HpLo">(20)</span></h3><div class="BottomRecommendationContent_root__2qm4_"><div class="mobile-recs"><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-0" aria-haspopup="dialog" aria-controls=":R8b5pkf6:" popovertarget=":R8b5pkf6:" style="anchor-name:--popover-R8b5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/a-survey-on-architectural-modifications-for-improving-performances-of-devices-using-finfet-techniques/79282757"><span class="sr-only">A Survey on Architectural Modifications for Improving Performances of Devices...</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:0" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="A Survey on Architectural Modifications for Improving Performances of Devices..." src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v4i7232-170830105603-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="A Survey on Architectural Modifications for Improving Performances of Devices..." src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v4i7232-170830105603-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">A Survey on Architectural Modifications for Improving Performances of Devices...</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" 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aria-hidden="true" class="seo-only">This document summarizes research on improving the performance of FinFET devices through architectural modifications. FinFETs are promising replacements for bulk CMOS beyond the 22nm node due to their ability to better control short channel effects. Various techniques are discussed to enhance FinFET performance in terms of power, speed, and area. These include optimizing the fin geometry, gate work functions, strain engineering, and reducing parasitic capacitance. FinFETs also show improvements in noise reduction, scalability, and applications such as SRAM cells compared to planar CMOS devices. Overall, the document reviews how FinFET design modifications can help address challenges in continued device scaling for low power applications.</span></div></div><div class="" id=":R8b5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8b5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-1" aria-haspopup="dialog" aria-controls=":R8j5pkf6:" popovertarget=":R8j5pkf6:" style="anchor-name:--popover-R8j5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/a-noise-tolerant-and-low-power-dynamic-logic-circuit-using-finfet-technology/56425834"><span class="sr-only">A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet Technology</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:1" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/h512015358-151224110918-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet Technology" src="https://cdn.slidesharecdn.com/ss_thumbnails/h512015358-151224110918-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet Technology</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet Technology for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8j5pkf6:" popovertarget=":R2r8j5pkf6:" style="anchor-name:--popover-R2r8j5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8j5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8j5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/ijeraeditor">IJERA Editor</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">For the improvement of performance and noise tolerance in dynamic logic circuits, a technique is proposed in this paper. A two-input AND gate is designed and simulated in 32nm technology using FinFET device. Simulation results indicate that the proposed technique provides improvement in noise tolerance of about three times and the use of FinFET device reduces the power consumption over the conventional MOSFET designs.</span></div></div><div class="" id=":R8j5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8j5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-2" aria-haspopup="dialog" aria-controls=":R8r5pkf6:" popovertarget=":R8r5pkf6:" style="anchor-name:--popover-R8r5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/review-of-fin-fet-technology-and-circuit-design-challenges/56425846"><span class="sr-only">Review of Fin FET Technology and Circuit Design Challenges</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:2" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Review of Fin FET Technology and Circuit Design Challenges" src="https://cdn.slidesharecdn.com/ss_thumbnails/m512017881-151224110942-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Review of Fin FET Technology and Circuit Design Challenges" src="https://cdn.slidesharecdn.com/ss_thumbnails/m512017881-151224110942-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Review of Fin FET Technology and Circuit Design Challenges</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Review of Fin FET Technology and Circuit Design Challenges for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r8r5pkf6:" popovertarget=":R2r8r5pkf6:" style="anchor-name:--popover-R2r8r5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r8r5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r8r5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/ijeraeditor">IJERA Editor</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This permits to lengthening the gate scaling beyond the planar transistor limits, sustaining a steep subthreshold slope, better performance with bias voltage scaling and good matching due to low doping concentration in the channel. There are, still, several challenges and limitations that FinFET technology has to face to be competitive with other technology options: Fin shape, pitch, isolation, doping, crystallographic orientation and stressing as well as device parasitic, performance and patterning approaches will be discussed.</span></div></div><div class="" id=":R8r5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R8r5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-3" aria-haspopup="dialog" aria-controls=":R935pkf6:" popovertarget=":R935pkf6:" style="anchor-name:--popover-R935pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" 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slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/ijeraeditor">IJERA Editor</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.</span></div></div><div class="" id=":R9j5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9j5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-6" aria-haspopup="dialog" aria-controls=":R9r5pkf6:" popovertarget=":R9r5pkf6:" style="anchor-name:--popover-R9r5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/minor-report-251347545/251347545"><span class="sr-only">Minor report</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:6" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Minor report" src="https://cdn.slidesharecdn.com/ss_thumbnails/minorreport-220314203245-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Minor report" src="https://cdn.slidesharecdn.com/ss_thumbnails/minorreport-220314203245-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Minor report</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Minor report for later" role="switch" aria-haspopup="dialog" aria-controls=":R2r9r5pkf6:" popovertarget=":R2r9r5pkf6:" style="anchor-name:--popover-R2r9r5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2r9r5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2r9r5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/ShamimAhmed680298">ShamimAhmed680298</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document is a project report submitted for the degree of Master of Technology in Electronics and Communication Engineering. It discusses the design of FinFET-based nano-electronic circuits. Specifically, it analyzes different types of FinFET devices including shorted-gate, independent-gate, and asymmetric gate FinFETs. It also compares different FinFET-based standard cell designs including inverters and NAND2 gates using these different FinFET configurations in terms of area, delay, and leakage. Simulation results showing the output of a FinFET inverter are also presented. The document provides an overview of FinFET technology and circuits from the device to the circuit level.</span></div></div><div class="" id=":R9r5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-R9r5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-7" aria-haspopup="dialog" aria-controls=":Ra35pkf6:" popovertarget=":Ra35pkf6:" style="anchor-name:--popover-Ra35pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/CSCJournals/fets-as-a-congruous-hardware-in-embedded-technology-and-sensors"><span class="sr-only">FETs as a Congruous Hardware in Embedded Technology and Sensors</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:7" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="FETs as a Congruous Hardware in Embedded Technology and Sensors" src="https://cdn.slidesharecdn.com/ss_thumbnails/ije-511-210804061215-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="FETs as a Congruous Hardware in Embedded Technology and Sensors" src="https://cdn.slidesharecdn.com/ss_thumbnails/ije-511-210804061215-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">FETs as a Congruous Hardware in Embedded Technology and Sensors</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save FETs as a Congruous Hardware in Embedded Technology and Sensors for later" role="switch" aria-haspopup="dialog" aria-controls=":R2ra35pkf6:" popovertarget=":R2ra35pkf6:" style="anchor-name:--popover-R2ra35pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2ra35pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2ra35pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/CSCJournals">CSCJournals</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses different types of field effect transistors (FETs) that can be used in embedded technology and sensors. It classifies FETs based on the number of gates (single gate, double gate, tri gate, gate all around), arrangement (planar, non-planar), and composition materials (silicon, germanium, gallium arsenide, indium gallium arsenide, graphene). Multi-gate FETs like tri-gate and gate-all-around FETs are presented as promising technologies for future embedded processors that can support advanced machine learning algorithms through higher performance. The ideal FET technology depends on factors like material availability, switching speed, power dissipation, and scaling</span></div></div><div class="" id=":Ra35pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Ra35pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-8" aria-haspopup="dialog" aria-controls=":Rab5pkf6:" popovertarget=":Rab5pkf6:" style="anchor-name:--popover-Rab5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/ijeraeditor/kg3418451855"><span class="sr-only">Kg3418451855</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" 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international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.</span></div></div><div class="" id=":Rab5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rab5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-9" aria-haspopup="dialog" aria-controls=":Raj5pkf6:" popovertarget=":Raj5pkf6:" style="anchor-name:--popover-Raj5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/btech-minor-projectppt-pptx-nanowire-fet/276109323"><span class="sr-only">btech minor projectppt.pptx nanowire fet</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:9" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="btech minor projectppt.pptx nanowire fet" src="https://cdn.slidesharecdn.com/ss_thumbnails/btechminorprojectppt-250228045025-cbb4c7ef-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="btech minor projectppt.pptx nanowire fet" 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class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-10" aria-haspopup="dialog" aria-controls=":Rar5pkf6:" popovertarget=":Rar5pkf6:" style="anchor-name:--popover-Rar5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/analysis-of-finfet-and-cntfet-based-hybridcmos-full-adder-circuit/254823692"><span class="sr-only">Analysis of FinFET and CNTFET based HybridCMOS Full Adder Circuit</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:10" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Analysis of FinFET and CNTFET based HybridCMOS Full Adder Circuit" src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v9i1189-221208094852-3dd55b22-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Analysis of FinFET and CNTFET based HybridCMOS Full Adder Circuit" src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v9i1189-221208094852-3dd55b22-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Analysis of FinFET and CNTFET based HybridCMOS Full Adder Circuit</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Analysis of FinFET and CNTFET based HybridCMOS Full Adder Circuit for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rar5pkf6:" popovertarget=":R2rar5pkf6:" style="anchor-name:--popover-R2rar5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rar5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rar5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/irjetjournal">IRJET Journal</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document analyzes and compares FinFET and CNTFET based hybrid CMOS full adder circuits. It proposes both a FinFET based and CNTFET based 10-transistor hybrid CMOS full adder circuit. The circuits were simulated in 32nm, 16nm, and 10nm technologies to calculate power consumption, delay, and power-delay product. The analysis aims to determine which device, FinFET or CNTFET, is more efficient for the hybrid CMOS full adder circuit based on the simulation results.</span></div></div><div class="" id=":Rar5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rar5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-11" aria-haspopup="dialog" aria-controls=":Rb35pkf6:" popovertarget=":Rb35pkf6:" style="anchor-name:--popover-Rb35pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/multiple-gate-field-effect-transistors-for/64941807"><span class="sr-only">Multiple gate field effect transistors for</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:11" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Multiple gate field effect transistors for" src="https://cdn.slidesharecdn.com/ss_thumbnails/multiplegatefield-effecttransistorsfor-160812140956-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Multiple gate field effect transistors for" src="https://cdn.slidesharecdn.com/ss_thumbnails/multiplegatefield-effecttransistorsfor-160812140956-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Multiple gate field effect transistors for</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Multiple gate field effect transistors for for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rb35pkf6:" popovertarget=":R2rb35pkf6:" style="anchor-name:--popover-R2rb35pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rb35pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rb35pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/esatjournals">eSAT Journals</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document provides a review of multiple gate field-effect transistors (MuGFETs), also known as FinFETs, as promising candidates to enable continued CMOS scaling. It discusses the motivation for multigate transistors due to short channel effects. It then summarizes the evolution of FinFET technologies, including variants like omega-gate and pi-gate FinFETs. Fabrication techniques like resist-defined fin and spacer-defined fin patterning are briefly outlined. Performance metrics like mobility, saturation velocity, transconductance and voltage gain are compared between FinFETs and planar MOSFETs based on measurements. FinFETs show lower resistance but higher voltage gain due to lower output conductance.</span></div></div><div class="" id=":Rb35pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rb35pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-12" aria-haspopup="dialog" aria-controls=":Rbb5pkf6:" popovertarget=":Rbb5pkf6:" style="anchor-name:--popover-Rbb5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/physical-scaling-limits-of-finfet-structure-a-simulation-study-96998778/96998778"><span class="sr-only">Physical Scaling Limits of FinFET Structure: A Simulation Study</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:12" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Physical Scaling Limits of FinFET Structure: A Simulation Study" src="https://cdn.slidesharecdn.com/ss_thumbnails/2111vlsics03-180514055645-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Physical Scaling Limits of FinFET Structure: A Simulation Study" src="https://cdn.slidesharecdn.com/ss_thumbnails/2111vlsics03-180514055645-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Physical Scaling Limits of FinFET Structure: A Simulation Study</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Physical Scaling Limits of FinFET Structure: A Simulation Study for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbb5pkf6:" popovertarget=":R2rbb5pkf6:" style="anchor-name:--popover-R2rbb5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbb5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbb5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/vlsics">VLSICS Design</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However, as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.</span></div></div><div class="" id=":Rbb5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbb5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-13" aria-haspopup="dialog" aria-controls=":Rbj5pkf6:" popovertarget=":Rbj5pkf6:" style="anchor-name:--popover-Rbj5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/physical-scaling-limits-of-finfet-structure-a-simulation-study/96998650"><span class="sr-only">Physical Scaling Limits of FinFET Structure: A Simulation Study</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:13" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Physical Scaling Limits of FinFET Structure: A Simulation Study" src="https://cdn.slidesharecdn.com/ss_thumbnails/2111vlsics03-180514055549-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Physical Scaling Limits of FinFET Structure: A Simulation Study" src="https://cdn.slidesharecdn.com/ss_thumbnails/2111vlsics03-180514055549-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Physical Scaling Limits of FinFET Structure: A Simulation Study</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Physical Scaling Limits of FinFET Structure: A Simulation Study for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbj5pkf6:" popovertarget=":R2rbj5pkf6:" style="anchor-name:--popover-R2rbj5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbj5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbj5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/vlsics">VLSICS Design</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document summarizes a simulation study on the physical scaling limits of FinFET structures. It analyzes the scaling limits of double gate underlap and triple gate overlap FinFET structures using 2D and 3D computer simulations. Key findings include: 1) For double gate FinFETs, DIBL and SS increase abruptly when the ratio of gate length to fin thickness (L/Tfin) goes below 1.5, limiting scaling. 2) For triple gate FinFETs, both fin thickness and height can control short channel effects, but fin thickness is found to be a more dominant parameter. DIBL and SS increase as the ratio of effective gate length to fin thickness (Leff/Tfin) decreases</span></div></div><div class="" id=":Rbj5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbj5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-14" aria-haspopup="dialog" aria-controls=":Rbr5pkf6:" popovertarget=":Rbr5pkf6:" style="anchor-name:--popover-Rbr5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/impact-of-device-parameters-of-triple-gate-soifinfet-on-the-performance-of-cmos-inverter-at-22nm/133830828"><span class="sr-only">IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C...</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:14" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C..." src="https://cdn.slidesharecdn.com/ss_thumbnails/3512vlsics07-190301082624-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C..." src="https://cdn.slidesharecdn.com/ss_thumbnails/3512vlsics07-190301082624-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C...</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C... for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rbr5pkf6:" popovertarget=":R2rbr5pkf6:" style="anchor-name:--popover-R2rbr5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbr5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbr5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/vlsics">VLSICS Design</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document summarizes a simulation-based study of the impact of device parameters on the performance of 22nm triple gate SOI FinFETs. Device parameters like fin width, fin height, and gate oxide thickness were varied and their effects on short channel effects, on-current, off-current, and gate leakage current were analyzed. It was found that increasing fin width and height improved on-current but also increased off-current and short channel effects. Reducing fin thickness lowered off-current, while reducing fin height decreased gate leakage. The performance and static power of a CMOS inverter built using the FinFETs was also evaluated.</span></div></div><div class="" id=":Rbr5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rbr5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-15" aria-haspopup="dialog" aria-controls=":Rc35pkf6:" popovertarget=":Rc35pkf6:" style="anchor-name:--popover-Rc35pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/zno-based-transparent-electronics/41946343"><span class="sr-only">ZnO based transparent electronics</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:15" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="ZnO based transparent electronics" src="https://cdn.slidesharecdn.com/ss_thumbnails/znobasedtransparentelectronics-141124054255-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="ZnO based transparent electronics" src="https://cdn.slidesharecdn.com/ss_thumbnails/znobasedtransparentelectronics-141124054255-conversion-gate02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">ZnO based transparent electronics</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save ZnO based transparent electronics for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rc35pkf6:" popovertarget=":R2rc35pkf6:" style="anchor-name:--popover-R2rc35pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rc35pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rc35pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/cdtpv">cdtpv</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses transparent electronic devices based on zinc oxide (ZnO), including ZnO thin-film transistors (TFTs), Schottky diodes, and metal-semiconductor field-effect transistors (MESFETs). It also describes new applications using these devices, such as for display technology and transparent integrated circuits. Finally, it presents ZnO-based planar nano-devices fabricated using electron beam lithography and wet etching, including self-switching diodes and side-gated transistors that could enable ultra-fast logic circuits.</span></div></div><div class="" id=":Rc35pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rc35pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-16" aria-haspopup="dialog" aria-controls=":Rcb5pkf6:" popovertarget=":Rcb5pkf6:" style="anchor-name:--popover-Rcb5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/251-255/13948618"><span class="sr-only">251 255</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:16" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="251 255" src="https://cdn.slidesharecdn.com/ss_thumbnails/251-255-120812035510-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="251 255" src="https://cdn.slidesharecdn.com/ss_thumbnails/251-255-120812035510-phpapp02-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">251 255</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save 251 255 for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcb5pkf6:" popovertarget=":R2rcb5pkf6:" style="anchor-name:--popover-R2rcb5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcb5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcb5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/IjarcetJournal">Editor IJARCET</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">The document summarizes research on designing local oscillator circuits using FinFET and single-electron transistor (SET) technologies. It describes the structures and operating principles of FinFETs and SETs. Specifically, it discusses how three-stage ring oscillators were designed using both FinFETs and SETs in circuit simulation software. For the SET-based oscillator, output waveform fluctuations were observed initially but stabilized over time, while the FinFET-based circuit was more stable. The calculated frequencies were 40.2 GHz for the SET oscillator and 38.6 GHz for the FinFET oscillator.</span></div></div><div class="" id=":Rcb5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcb5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-17" aria-haspopup="dialog" aria-controls=":Rcj5pkf6:" popovertarget=":Rcj5pkf6:" style="anchor-name:--popover-Rcj5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/irjet-simulation-of-high-k-dielectric-mos-with-hfo2-as-a-gate-dielectric/153506936"><span class="sr-only">IRJET- Simulation of High K Dielectric MOS with HFo2 as a Gate Dielectric</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:17" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="IRJET- Simulation of High K Dielectric MOS with HFo2 as a Gate Dielectric" src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v6i4549-190704065925-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="IRJET- Simulation of High K Dielectric MOS with HFo2 as a Gate Dielectric" src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v6i4549-190704065925-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">IRJET- Simulation of High K Dielectric MOS with HFo2 as a Gate Dielectric</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save IRJET- Simulation of High K Dielectric MOS with HFo2 as a Gate Dielectric for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcj5pkf6:" popovertarget=":R2rcj5pkf6:" style="anchor-name:--popover-R2rcj5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcj5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcj5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/irjetjournal">IRJET Journal</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses the simulation of a MOSFET device using HfO2 as the high-k gate dielectric material. It begins with an introduction to the need for high-k dielectrics to replace silicon dioxide as traditional MOSFETs continue to scale down. HfO2 is identified as a promising high-k material due to its high dielectric constant. The document then outlines the process steps to simulate an HfO2-based MOSFET using Silvaco simulation software. Key steps include depositing an HfO2 layer, doping the source and drain, and depositing metal contacts. A comparison is made between traditional MOSFETs and high-k MOSFETs, showing</span></div></div><div class="" id=":Rcj5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcj5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-18" aria-haspopup="dialog" aria-controls=":Rcr5pkf6:" popovertarget=":Rcr5pkf6:" style="anchor-name:--popover-Rcr5pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/low-power-based-ternary-half-adder-using-fin-type-field-effect-transistor-technology/253832053"><span class="sr-only">LOW POWER BASED TERNARY HALF ADDER USING FIN TYPE FIELD EFFECT TRANSISTOR TEC...</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:18" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="LOW POWER BASED TERNARY HALF ADDER USING FIN TYPE FIELD EFFECT TRANSISTOR TEC..." src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v9i7503-221027063209-4aecbe34-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="LOW POWER BASED TERNARY HALF ADDER USING FIN TYPE FIELD EFFECT TRANSISTOR TEC..." src="https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v9i7503-221027063209-4aecbe34-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">LOW POWER BASED TERNARY HALF ADDER USING FIN TYPE FIELD EFFECT TRANSISTOR TEC...</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save LOW POWER BASED TERNARY HALF ADDER USING FIN TYPE FIELD EFFECT TRANSISTOR TEC... for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rcr5pkf6:" popovertarget=":R2rcr5pkf6:" style="anchor-name:--popover-R2rcr5pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcr5pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcr5pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/irjetjournal">IRJET Journal</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">This document discusses a low-power ternary half adder design using FinFET technology. It begins with an abstract describing the research investigating a ternary half adder with low power, low leakage, and low frequency using FinFETs. Several circuit designs are then presented including decoders, sum generators, and carry generators implemented using FinFETs. Simulation results are shown comparing the energy, EDP, and average power of ternary adders using FinFETs versus carbon nanotube field-effect transistors, with FinFETs demonstrating lower power characteristics.</span></div></div><div class="" id=":Rcr5pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rcr5pkf6"></div><div class="separator Separator_root__70Ime Separator_horizontal__czVEa" style="--color:var(--blue-gray-200);--size:1px" role="separator"></div><div class="RailCard_root__rZUGY RailCard_hasDescription__MjSgf SlideshowCard_root__pD8t4 slideshow-card" aria-describedby="similarTo-card-description-19" aria-haspopup="dialog" aria-controls=":Rd35pkf6:" popovertarget=":Rd35pkf6:" style="anchor-name:--popover-Rd35pkf6"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/please-read-the-following-ieee-spectrum-articles-and-answer-the-questpdf/259002881"><span class="sr-only">Please read the following IEEE Spectrum articles and answer the quest.pdf</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:1.5;--index:19" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="Please read the following IEEE Spectrum articles and answer the quest.pdf" src="https://cdn.slidesharecdn.com/ss_thumbnails/pleasereadthefollowingieeespectrumarticlesandanswerthequest-230707090538-9f88276a-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/><img class="Thumbnail_thumb__UXO3a Thumbnail_contain__K6M0d" alt="Please read the following IEEE Spectrum articles and answer the quest.pdf" src="https://cdn.slidesharecdn.com/ss_thumbnails/pleasereadthefollowingieeespectrumarticlesandanswerthequest-230707090538-9f88276a-thumbnail.jpg?width=560&fit=bounds" loading="lazy"/></div><div class="SlideshowCard_content__xh7kV slideshow-card-content"><span class="slideshow-title SlideshowTitle_root__2VccW RailCard_title__Tvfiv ellipsis" style="-webkit-line-clamp:2" data-cy="slideshow-title">Please read the following IEEE Spectrum articles and answer the quest.pdf</span><button type="button" class="Button_root__i1yp0 Button_secondary__hHiHI Button_text__ZT_3O Button_small__sqsEx Button_icon__1C4qi save-slideshow-button SaveButton_root__b6zuu" data-testid="button" aria-checked="false" aria-label="Save Please read the following IEEE Spectrum articles and answer the quest.pdf for later" role="switch" aria-haspopup="dialog" aria-controls=":R2rd35pkf6:" popovertarget=":R2rd35pkf6:" style="anchor-name:--popover-R2rd35pkf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rd35pkf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rd35pkf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/fasttrackcomputersol">fasttrackcomputersol</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Please read the following IEEE Spectrum articles and answer the questions given. You may want to use illustrations in your answer to the questions, and mark them up accordingly as part of answering the questions. If you take illustrations from some source (including the IEEE Spectrum articles) please make sure this is properly cited. http://spectrum.ieee.org/semiconductors/nanotechnology/the-next-highperformance-transistor- could-be-made-from-lateral-nanowires Describe a FINFET and how it works. How is it different than the planar MOSFET described in the first 5 slides of the TFET lecture? Is the FINFET a quantum device? Give reasons why or why not. How is the nanowire device described here different than the FINFET? Why is this difference an advantage for the nanowire device? They one problem with the nanowire device is capacitive coupling. What is this and explain why it is a problem with the nanowire device? Solution 1) The FinFET technology promises to provide the deliver superior levels of scalability needed to ensure that the current progress with increased levels of integration within integrated circuits can be maintained. The FinFET offers many advantages in terms of IC processing that mean that it has been adopted as a major way forwards for incorporation within IC technology. FinFET technology has been born as a result of the relentless increase in the levels of integration. The basic tenet of Moore\'s law has held true for many years from the earliest years of integrated circuit technology. Essentially it states that the number of transistors on a given area of silicon doubles every two years. Some of the landmark chips of the relatively early integrated circuit era had a low transistor count even though they were advanced for the time. The 6800 microprocessor for example had just 5000 transistors. Todays have many orders of magnitude more. basically what is finfet?? FinFET technology takes its name from the fact that the FET structure used looks like a set of fins when viewed. The main characteristic of the FinFET is that it has a conducting channel wrapped by a thin silicon \"fin\" from which it gains its name. The thickness of the fin determines the effective channel length of the device. In terms of its structure, it typically has a vertical fin on a substrate which runs between a larger drain and source area. This protrudes vertically above the substrate as a fin. The gate orientation is at right angles to the vertical fin. And to traverse from one side of the fin to the other it wraps over the fin, enabling it to interface with three side of the fin or channel. This form of gate structure provides improved electrical control over the channel conduction and it helps reduce leakage current levels and overcomes some other short-channel effects.. The term FinFET is used somewhat generically. Sometimes it is used to describe any fin-based, multigate transistor architecture regardless of number of gates. Due to the increased emphas.</span></div></div><div class="" id=":Rd35pkf6:" popover="manual" data-popover-position="bottom-start" style="position-anchor:--popover-Rd35pkf6"></div></div><div class="desktop-recs"><div class="Slider_root__c0Jo8"><div class="Slider_scroller__KHjw4"><div class="BottomRecommendationCard_root__gffTk SlideshowCard_root__pD8t4 slideshow-card"><a class="SlideshowCardLink_root__p8KI7" data-cy="slideshow-card-link" data-testid="slideshow-card-link" href="https://www.slideshare.net/slideshow/a-survey-on-architectural-modifications-for-improving-performances-of-devices-using-finfet-techniques/79282757"><span class="sr-only">A Survey on Architectural Modifications for Improving Performances of Devices...</span></a><div class="slideshow-thumbnail Thumbnail_root__qLW0K SlideshowCard_thumb__86aJk" style="aspect-ratio:16 / 9;--index:0" data-testid="card-thumbnail"><img class="Thumbnail_thumb__UXO3a Thumbnail_blur__opK6A Thumbnail_cover__1zsIi" alt="A Survey on 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style="anchor-name:--popover-R2rbb69kf6"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rbb69kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rbb69kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/gchemicsoffice7">Janapriya Roy</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Super absorbency is higher swelling comes from for absorbing and storing high volume of aqueaous solution. Superabsorbent polymers consist of cross-linked network of hydrophilic polymer chains. Poly (acrylate/). Poly (acrylate/acrylic acid) was prepared for the synthesis of superabsorbent hydrogel (SAH) and their efficacy as an aid to retaining water for irrigation were evaluated. The SAH acrylate/acrylic acid was cross-linked with N N'-methylene-bis-acrylamide for better water retention. With the today's requirement for one click solution, the process of developing the superabsorbent technology was mainly driven by the requirements of disposable hygiene sector, agricultural industry etc. Over time, starch- grafted superabsorbent polymer evolved into cross-linked acrylic homopolymers. 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style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/save.ef1812e2.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><div class="Tooltip_root__7FS0Y" id=":R2rcj69kf6:" popover="manual" data-popover-position="top" style="position-anchor:--popover-R2rcj69kf6"></div><a class="SlideshowAuthor_root__IkT1_ RailCard_author__JYeYZ slideshow-author ellipsis" data-testid="slideshow-author" data-cy="slideshow-author" href="https://www.slideshare.net/permagoveu">permagoveu</a><div class="slideshow-stats SlideshowStats_root__EQOR1 RailCard_stats__ZvZms"> </div><span aria-hidden="true" class="seo-only">Development of Energy Islands (EIs) in Denmark are facing issues in moving from its current stage, having been implemented in Danish policy, towards the implementation and future planning process. 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class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/chevron-left.50b146c0.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button><button aria-label="Next" type="button" class="Slider_arrow__8LCca Slider_next__fa9IO"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/chevron-right.9b30ad08.svg);background-color:currentColor"></span><span class="sr-only"></span></span></button></div></div></div></div></div></div><div class="Transcript_root__Vrf6Q"><h2 class="Transcript_title__YgAka"><span class="icon Icon_root__AjZyv" style="--size:24px"><span class="Icon_icon__4zzsG" style="mask-image:url(https://public.slidesharecdn.com/_next/static/media/file.5db1ba24.svg);background-color:currentColor"></span><span class="sr-only"></span></span>Finfets</h2><div><ul class="Transcript_list__faItj"><div><li>1. <a class="Transcript_link__MLbGS" href="https://www.slideshare.net/slideshow/finfets/63919473#1">“We are just </a> an advanced breed of monkeys on a minor planet of a very average star. But we can understand the Universe. That makes us something very special.” - Stephen Hawking. </li></div><div><li>2. <a class="Transcript_link__MLbGS" href="https://www.slideshare.net/slideshow/finfets/63919473#2">FinFET Architecture Analysis </a> and Fabrication Mechanism M.A.Qadeer Department of Electronics and Communication Mahatma Gandhi Institute of Technology Sai Sujith Seelam Department of Electronics and Communication Mahatma Gandhi Institute of </li></div><div><li>3. <a class="Transcript_link__MLbGS" href="https://www.slideshare.net/slideshow/finfets/63919473#3">Topics  Introduction  Why </a> FinFET??????  Evaluation and comparison of FinFET technology.  What are FinFET’s???  Structure & Architecture Analysis  Recent FinFET Development  Fabrication Mechanism  Advantages and Limitations of FinFET circuit design tradeoff’s  Applications of FinFET Technology </li></div><div><li>4. <a class="Transcript_link__MLbGS" href="https://www.slideshare.net/slideshow/finfets/63919473#4">The term “FINFET” describes </a> a non-planar, double gate transistor built on an SOI substrate, based on the single gate transistor design. The important characteristics of FINFET is that the conducting channel is wrapped by a thin Si “fin”, which forms the body of the device. The thickness of the fin determines the effective channel length of the device. </li></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div></div><div><li>28. <a class="Transcript_link__MLbGS" href="https://www.slideshare.net/slideshow/finfets/63919473#28">To summarize, in </a> FinFET due to dual gate structure it has better controlling over several short channel effect such as VT roll off, DIBL, subthreshold swing, gate direct tunnelling leakage and hot carrier effects compare to the planner MOSFET FinFET has higher integration density compare to the planner MOSFET. Also fabrication of the FinFET is easiest </li></div><div><li>29. <a class="Transcript_link__MLbGS" href="https://www.slideshare.net/slideshow/finfets/63919473#29">[1] NTUEE SEMINAR </a> CHUNG HSUN LI [2]Yang kayo-Choi, Leland Chang, Pushkar Ranade, Jeong-Soo Lee, Daewoo Ha, Siam Balasubramanian, Aditya Agarwal, Mike Ameen, Tus-Jae King and Jeffrey Boor. “FinFET Process Refinements for Improved for Mobility and Gate Work Function Engineering,” pp. 259-262, in IEDM Tech., 2002. [3] Jovanovich, T. Sligo, P. Biljanović, L.K. Naiver, “FinFET technology for wide-channel devices with ultra-thin silicon body”. [4] Bin Yu, Leland Chang*, Shelby Ahmed, Haiphong Wang, Scott Bell, Chih-Yuh Yang, Cyrus Tabery,Chau Ho, Qi Xiang, Tzu-Jae King*, Jeffrey Boor*, Chamming Hu*, Ming-Ren Lin, and David Kyser, “FinFET Scaling to 10nm Gate Length,” IEEE-2002. [5] Venkatnarayan Hariharan, 2005, “EEs801 Seminar report FinFETs,” http://www.ee.iitb.ac.in [6] Asif I. Khan and Muhammad K. Ashraf, “Study of Electron Distribution of Undoped Ultra Thin Body Symmetric Double Gate </li></div></ul></div></div><div class="EditorsNotes_root__3PcDF"><h3 class="Heading_heading__3MAvZ Heading_h3__f1djd EditorsNotes_heading__XR9E6">Editor's Notes</h3><ul class="EditorsNotes_list__NcG5Y"><li class="EditorsNotes_item__ebBbj"><a class="EditorsNotes_link__HRUAh" href="https://www.slideshare.net/slideshow/finfets/63919473#5">#5:</a> The term “FINFET” describes a non-planar, double gate transistor built on an SOI substrate, based on the single gate transistor design. The important characteristics of FINFET is that the conducting channel is wrapped by a thin Si “fin”, which forms the body of the device. The thickness of the fin determines the effective channel length of the device. FINFET is a transistor design first developed by Chenming Hu and his colleagues at the University of California at Berkeley, which tries to overcome the worst types of SCE(Short Channel Effect). Originally, FINFET was developed for use on Silicon-On-Insulator(SOI). SOI FINFET with thick oxide on top of fin are called “Double-Gate” and those with thin oxide on top as well as on sides are called “Triple-Gate” FINFETs. </li></ul></div><dialog class="Modal_root__TYkzh FullscreenModal_root__efM9m" id=":R2kf6:"><div class="Modal_wrapper__4UTGq"><div class="modal-content Modal_content__R1F4d FullscreenModal_content__bQ6mt"></div></div></dialog><div class="ad textads banner-ads banner_ads ad-unit ad-zone ad-space adsbox ads prebid" style="position:absolute;height:1px"></div><footer class="Footer_footer__N3WmV"><div class="Footer_top__y0vfl" data-testid="footer-top"><div class="Footer_links__F2xFZ"><a class="Link_root__vn3ab Link_light__mcUPh Link_size-medium__ZLo12 Link_weight-bold__me4nt" style="order:0" href="/about">About</a><a class="Link_root__vn3ab Link_light__mcUPh Link_size-medium__ZLo12 Link_weight-bold__me4nt" style="order:1" href="https://support.scribd.com/hc/en/categories/360004792932-SlideShare?userType=SlideShare">Support</a><a 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17:36:32 UTC","description":"This document provides an overview of FinFET technology. It defines FinFET as a non-planar, double gate transistor built on an SOI substrate, where the conducting channel is wrapped by a thin silicon fin. Due to its dual gate structure, FinFET has better control over short channel effects compared to planar MOSFETs. It also allows for higher integration density than planar MOSFETs. Additionally, FinFET fabrication is relatively simple. 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But we can\nunderstand the Universe. That makes us something\nvery special.”\n- Stephen Hawking.\n ","FinFET Architecture Analysis and\nFabrication Mechanism\nM.A.Qadeer\nDepartment of Electronics\nand Communication\nMahatma Gandhi Institute of\nTechnology\nSai Sujith\nSeelam\nDepartment of Electronics\nand Communication\nMahatma Gandhi Institute of\n ","Topics\n Introduction\n Why FinFET??????\n Evaluation and comparison of FinFET\ntechnology.\n What are FinFET’s???\n Structure \u0026 Architecture Analysis\n Recent FinFET Development\n Fabrication Mechanism\n Advantages and Limitations of FinFET\ncircuit design tradeoff’s\n Applications of FinFET Technology\n ","The term “FINFET”\ndescribes a non-planar,\ndouble gate transistor built\non an SOI substrate,\nbased on the single gate\ntransistor design.\nThe important\ncharacteristics of FINFET is\nthat the conducting\nchannel is wrapped by a\nthin Si “fin”, which forms\nthe body of the device.\nThe thickness of the fin\ndetermines the effective\nchannel length of the\ndevice.\n ","","","","","","","","","","","","","","","","","","","","","","","","To summarize, in FinFET due to dual gate\nstructure it has better controlling over\nseveral short channel effect such as VT\nroll off, DIBL, subthreshold swing, gate\ndirect tunnelling leakage and hot carrier\neffects compare to the planner MOSFET\nFinFET has higher integration density\ncompare to the planner MOSFET. Also\nfabrication of the FinFET is easiest\n ","[1] NTUEE SEMINAR CHUNG HSUN LI\n[2]Yang kayo-Choi, Leland Chang, Pushkar Ranade, Jeong-Soo\nLee, Daewoo Ha, Siam Balasubramanian,\nAditya Agarwal, Mike Ameen, Tus-Jae King and Jeffrey Boor.\n“FinFET Process Refinements for Improved for Mobility and Gate\nWork Function Engineering,” pp. 259-262, in IEDM Tech., 2002.\n[3] Jovanovich, T. Sligo, P. Biljanović, L.K. Naiver, “FinFET\ntechnology for wide-channel devices with ultra-thin silicon body”.\n[4] Bin Yu, Leland Chang*, Shelby Ahmed, Haiphong Wang, Scott\nBell, Chih-Yuh Yang, Cyrus Tabery,Chau Ho, Qi Xiang, Tzu-Jae\nKing*, Jeffrey Boor*, Chamming Hu*, Ming-Ren Lin, and David\nKyser, “FinFET Scaling to 10nm Gate Length,” IEEE-2002.\n[5] Venkatnarayan Hariharan, 2005, “EEs801 Seminar report\nFinFETs,” http://www.ee.iitb.ac.in\n[6] Asif I. Khan and Muhammad K. Ashraf, “Study of Electron\nDistribution of Undoped Ultra Thin Body Symmetric Double Gate\n "],"twitterShareUrl":"https://twitter.com/intent/tweet?via=SlideShare\u0026text=Finfets+https%3A%2F%2Fwww.slideshare.net%2Fslideshow%2Ffinfets%2F63919473","type":"presentation","viewStats":{"views":18549,"viewsFromEmbeds":106,"topEmbeds":[]},"recommendationsByLocation":{"rightRail":[{"algorithmId":"5","displayTitle":"Finfet Technology","isSavedByCurrentUser":false,"pageCount":23,"score":0.855192,"slideshowId":"227466347","sourceName":"cm_interact","strippedTitle":"finfet-technology","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/17304013-navya-200209170047-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document discusses FinFET technology. It begins with an introduction to FinFETs, explaining that they are a type of double-gate CMOS that offers advantages over traditional CMOS for scaling to short gate lengths. It then discusses why FinFET technology is needed as traditional CMOS scaling faces challenges from subthreshold and gate leakage. It provides details on double-gate FET structure and operation, including how it controls short-channel effects better than single-gate FETs. It also covers FinFET features, applications, challenges and concludes that FinFETs can help continue CMOS scaling if key issues like fin patterning and gate work functions are addressed.","tags":["finfet","vlsi design","cmos"],"url":"https://www.slideshare.net/slideshow/finfet-technology/227466347","userLogin":"SrinivasVasamsetti2","userName":"Srinivas Vasamsetti ","viewCount":3616},{"algorithmId":"5","displayTitle":"Introduction to FinFET","isSavedByCurrentUser":false,"pageCount":14,"score":0.838774,"slideshowId":"89025450","sourceName":"cm_interact","strippedTitle":"introduction-to-finfet-89025450","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/introductiontofinfet-180227020253-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"For more information regarding the \"Construction of finFET\" you can contact through mail (manishkenchi111296@gmail.com)","tags":["finfet","history","construction"],"url":"https://www.slideshare.net/slideshow/introduction-to-finfet-89025450/89025450","userLogin":"ManishKenchi","userName":"ManishKenchi","viewCount":12358},{"algorithmId":"5","displayTitle":"Introduction to FINFET, Details of FinFET","isSavedByCurrentUser":false,"pageCount":16,"score":0.836081,"slideshowId":"239800902","sourceName":"cm_interact","strippedTitle":"introduction-to-finfet-details-of-finfet","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/finfetppt-201205162426-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"1) The document discusses FinFET, a type of non-planar transistor used in modern semiconductor fabrication. It describes the construction of FinFET which involves etching fins on an SOI substrate and wrapping gates around the fins. \n\n2) FinFET works by having an elevated fin-shaped channel that the gate wraps around. This allows FinFET to operate at lower voltage and offer higher drive current compared to planar transistors. \n\n3) FinFET technology is being widely adopted in integrated circuits due to advantages like suppressed short channel effect, better drive current, lower leakage power, and no random dopant fluctuation.","tags":["technology","engineering","science"],"url":"https://www.slideshare.net/slideshow/introduction-to-finfet-details-of-finfet/239800902","userLogin":"justingeorge55","userName":"Justin George","viewCount":2159},{"algorithmId":"5","displayTitle":"Finfet","isSavedByCurrentUser":false,"pageCount":25,"score":0.829147,"slideshowId":"47143716","sourceName":"cm_interact","strippedTitle":"finfet-47143716","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/finfet-150418093709-conversion-gate01-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"The document discusses the history and development of FinFET transistors. FinFETs were developed to overcome short channel effects by using a thin silicon fin as the channel between the source and drain. This allows the gate to control the channel from both sides and edges of the fin. FinFET fabrication involves depositing fins using electron beam lithography then depositing a gate material around the fins. FinFETs suppress short channel effects and allow for higher density transistors compared to planar MOSFETs, though they also have some disadvantages like reduced mobility.","tags":[],"url":"https://www.slideshare.net/slideshow/finfet-47143716/47143716","userLogin":"AdityaSingh155","userName":"Aditya Singh","viewCount":9578},{"algorithmId":"5","displayTitle":"Fin Fet Technology by SAMRA","isSavedByCurrentUser":false,"pageCount":18,"score":0.799995,"slideshowId":"4055165","sourceName":"cm_interact","strippedTitle":"fin-fet-technology-by-samra","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/finfettechnology-100511160559-phpapp01-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"FinFET technology uses a fin-like gate structure rather than a planar structure to help enable continued transistor scaling. FinFETs have a thin vertical \"fin\" structure rather than a flat design. This allows for better control of the channel and helps address issues like short channel effects. FinFETs can be fabricated using either a gate-first or gate-last process and involve patterning thin fins on a silicon-on-insulator wafer and then adding gate material. FinFETs offer benefits like reduced leakage currents and separate control of threshold voltages.","tags":["finfet technology ppt nano technology"],"url":"https://www.slideshare.net/slideshow/fin-fet-technology-by-samra/4055165","userLogin":"samra0077","userName":"Bal Partap Singh","viewCount":12123},{"algorithmId":"5","displayTitle":"Finfet; My 3rd PPT in clg","isSavedByCurrentUser":false,"pageCount":25,"score":0.782273,"slideshowId":"30323450","sourceName":"cm_interact","strippedTitle":"finfet","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/finfet-140122182224-phpapp01-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"FINFET is a type of non-planar transistor with a conducting channel that is wrapped by a thin silicon fin. It was developed to overcome short channel effects seen in planar MOSFETs as transistors continue to shrink. Key aspects of FINFETs include the fin structure which allows gate control of the channel from both sides and the top, reducing leakage currents. Fabrication involves depositing fins and wrapping a gate material around them. FINFETs have been shown to effectively suppress short channel effects even at very small gate lengths, but come with increased manufacturing complexity and potential reliability issues compared to planar transistors.","tags":["finfet"],"url":"https://www.slideshare.net/slideshow/finfet/30323450","userLogin":"ARUNASUJITHA","userName":"ARUNASUJITHA","viewCount":21336},{"algorithmId":"5","displayTitle":"SHORT CHANNEL EFFECTS IN MOSFETS- VLSI DESIGN","isSavedByCurrentUser":false,"pageCount":10,"score":0.767131,"slideshowId":"249395028","sourceName":"cm_interact","strippedTitle":"short-channel-effects-in-mosfets-vlsi-design","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/shortchannel-210617085230-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"SHORT-CHANNEL EFFECTS\r\nA MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length \u003c\u003c1 m, short channel effect becomes important .\r\n This leads to many\r\n undesirable effects in MOSFET.\r\nThe short-channel effects are attributed to two physical phenomena:\r\n\tA) The limitation imposed on electron drift characteristics in the channel,\r\n\tB) The modification of the threshold voltage due to the shortening channel length.\r\n\tIn particular five different short-channel effects can be distinguished:\r\n\t1. Drain-induced barrier lowering and “Punch through”\r\n2. Surface scattering\r\n\t3. Velocity saturation\r\n\t4. Impact ionization\r\n\t5. Hot electrons\r\n\r\n\r\n\r\n","tags":["short channel effects in mosfets","mosfets","vlsi design"],"url":"https://www.slideshare.net/slideshow/short-channel-effects-in-mosfets-vlsi-design/249395028","userLogin":"Nithin34","userName":"NITHIN KALLE PALLY","viewCount":9973},{"algorithmId":"5","displayTitle":"Analytical Modeling of Tunneling Field Effect Transistor (TFET)","isSavedByCurrentUser":false,"pageCount":22,"score":0.765193,"slideshowId":"74188307","sourceName":"cm_interact","strippedTitle":"analytical-modeling-of-tunneling-field-effect-transistor-tfet-74188307","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/analyticalmodelingoftunnelingfieldeffecttransistortfet-170402163537-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"1. The document discusses the analytical modeling of tunnel field effect transistors (TFETs). TFETs are devices that can switch between on and off states at low voltages compared to MOSFETs. \n2. TFETs operate using the principle of band-to-band tunneling, allowing for a steeper subthreshold slope than MOSFETs. However, TFETs currently have low drive currents that require further research to make them suitable for practical applications. \n3. The document examines equations and parameters for calculating the drain current in TFETs and investigating the effects of channel length and gate voltage on this current. It also outlines some benefits and limitations of TFETs.","tags":["tunneling field-effect transistor","tfet"],"url":"https://www.slideshare.net/slideshow/analytical-modeling-of-tunneling-field-effect-transistor-tfet-74188307/74188307","userLogin":"MdAbuObayda","userName":"Abu Obayda","viewCount":4738}],"whatsHot":[{"algorithmId":"5","displayTitle":"Silicon on Insulator (SOI) Technology","isSavedByCurrentUser":false,"pageCount":51,"score":0.762407,"slideshowId":"83737859","sourceName":"cm_interact","strippedTitle":"silicon-on-insulator-soi-technology","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/soiss-171209180845-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This presentation discusses about the concept of SOI technology, Fabrication methods, applications, advantages and limitations of SOI technology.","tags":["besoi","bulk cmos","dibl"],"url":"https://www.slideshare.net/shudhanshu29/silicon-on-insulator-soi-technology","userLogin":"shudhanshu29","userName":"Sudhanshu Janwadkar","viewCount":44381},{"algorithmId":"5","displayTitle":"MOSFET and Short channel effects","isSavedByCurrentUser":false,"pageCount":12,"score":0.761966,"slideshowId":"70379558","sourceName":"cm_interact","strippedTitle":"mosfet-and-short-channel-effects","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-161222172031-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.","tags":["mosfet","short channel effects","second order effects of mosfet"],"url":"https://www.slideshare.net/slideshow/mosfet-and-short-channel-effects/70379558","userLogin":"MuzafarRather","userName":"Lee Rather","viewCount":21037},{"algorithmId":"5","displayTitle":"Second order effects","isSavedByCurrentUser":false,"pageCount":4,"score":0.759957,"slideshowId":"89683801","sourceName":"cm_interact","strippedTitle":"second-order-effects","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/secondordereffects-180305173314-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"The document discusses four topics related to transistors:\n1. Threshold voltage is the minimum gate voltage needed to create a conducting path between source and drain, and depends on oxide thickness, temperature, and random dopant fluctuations. \n2. Latchup refers to a short circuit formed between power and ground rails in an integrated circuit, caused by interaction between parasitic bipolar transistors.\n3. Electromigration is the forced movement of metal ions due to an electric field, with atoms traveling toward the positive conductor end and vacancies toward the negative end.\n4. Mobility degradation occurs due to lateral and vertical electric fields scattering carriers, reducing surface mobility as channel lengths shrink.","tags":["vlsi","low power"],"url":"https://www.slideshare.net/slideshow/second-order-effects/89683801","userLogin":"rppvch","userName":"PRAVEEN KUMAR CHITLURI","viewCount":6338},{"algorithmId":"5","displayTitle":"MOSFET, SOI-FET and FIN-FET-ABU SYED KUET","isSavedByCurrentUser":false,"pageCount":60,"score":0.759056,"slideshowId":"236290962","sourceName":"cm_interact","strippedTitle":"mosfet-soifet-and-finfet","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/mosfetsoi-fetandfinfet-200627074207-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"The document provides an overview of the history and scaling of transistors and integrated circuits. It discusses how vacuum tubes were replaced by transistors, with the first transistor invented in 1947 and the first integrated circuit in 1958. It describes how continuous scaling and improvements in silicon manufacturing have led to billions of transistors being integrated onto a single chip today. The document then discusses different transistor technologies, including MOSFETs, and how scaling to smaller sizes introduced challenges like short channel effects that new transistor designs like FinFETs help address.","tags":[],"url":"https://www.slideshare.net/slideshow/mosfet-soifet-and-finfet/236290962","userLogin":"syedsumon","userName":"A. S. M. 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It discusses the construction, operation, benefits and challenges of integrating 3D transistors into mainstream manufacturing.","tags":[],"url":"https://www.slideshare.net/chetankataria986/tri-gate-transistors","userLogin":"chetankataria986","userName":"Chetan Kataria","viewCount":8587},{"algorithmId":"21","displayTitle":"3D or Tri-gate transistors","isSavedByCurrentUser":false,"pageCount":18,"score":0,"slideshowId":"27894215","sourceName":"li_interact","strippedTitle":"3d-or-trigate-transistors","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/3dtransistors-131104120433-phpapp01-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"The document discusses 3D transistors, which employ a single gate stacked on top of two vertical gates to allow three times the surface area for electron flow without increasing gate size. This overcomes issues with further scaling planar transistors. 3D transistors provide fully depleted operation and tighter channel control through conducting channels on three sides of a vertical fin. This enables high drive currents and improved switching performance. 3D transistors can operate at lower voltages than planar transistors, reducing power consumption by over 50% while maintaining or improving performance. They will allow continued transistor scaling per Moore's Law and are needed for future generations of chips.","tags":["transistors","mosfet","tri gate"],"url":"https://www.slideshare.net/slideshow/3d-or-trigate-transistors/27894215","userLogin":"Kman12","userName":"Karanvir Singh","viewCount":13216},{"algorithmId":"21","displayTitle":"SOI","isSavedByCurrentUser":false,"pageCount":24,"score":0,"slideshowId":"61262146","sourceName":"li_interact","strippedTitle":"soi-61262146","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/aa8e72c0-f6e3-495b-a898-b32d4772b0b8-160423091329-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document discusses silicon on insulator (SOI) technology. It begins by defining SOI as using a layered silicon-insulator-silicon substrate instead of conventional silicon substrates in semiconductor manufacturing. It then explains the differences between bulk silicon MOSFETs and SOI MOSFETs. The document discusses several manufacturing methods for SOI, including SIMOX, wafer bonding, and Smart Cut. It also covers the benefits of SOI such as lower parasitic capacitance and resistance to latch-up. Finally, it distinguishes between partially depleted SOI and fully depleted SOI devices.","tags":[],"url":"https://www.slideshare.net/slideshow/soi-61262146/61262146","userLogin":"KASHISHGROVER3","userName":"KASHISH GROVER","viewCount":12173},{"algorithmId":"21","displayTitle":"Vlsi design mosfet","isSavedByCurrentUser":false,"pageCount":162,"score":0,"slideshowId":"15839568","sourceName":"li_interact","strippedTitle":"vlsi-design-mosfet","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/vlsidesignmosfet-130103055520-phpapp02-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":" Here are the key points about NMOS transistor operation in the subthreshold region:\n\n- When 0 \u003c Vgs \u003c Vt, a depletion region forms in the channel due to the electric field repelling majority carriers (holes). \n\n- This depletion region means there are no carriers to conduct current through the channel. \n\n- Only a small leakage current flows, as the channel is not fully \"turned on\".\n\n- The transistor is not fully on or off in this region - it is said to be weakly inverted. Current has an exponential relationship with Vgs.\n\n- Some applications exploit this behavior for very low power analog/digital circuits.\n\nSo in summary, a small current flows due to weak inversion in the","tags":[],"url":"https://www.slideshare.net/slideshow/vlsi-design-mosfet/15839568","userLogin":"vennila12","userName":"vennila12","viewCount":18258},{"algorithmId":"21","displayTitle":"3d transistor","isSavedByCurrentUser":false,"pageCount":26,"score":0,"slideshowId":"38587605","sourceName":"li_interact","strippedTitle":"3d-transistor","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/3dtransistor-140902015259-phpapp01-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document discusses the evolution of transistor technology, focusing on the development of tri-gate transistors. It describes how tri-gate transistors allow Moore's Law to continue by addressing issues like short channel effects that arise at smaller scales. The document outlines different types of multigate transistors and explains the advantages of tri-gate transistors, such as reduced power dissipation and better control over leakage current. It also provides some examples of how small 22nm transistors are in comparison to everyday objects.","tags":[],"url":"https://www.slideshare.net/slideshow/3d-transistor/38587605","userLogin":"swatikamat","userName":"swatikamat","viewCount":8800},{"algorithmId":"21","displayTitle":"3673 mosfet","isSavedByCurrentUser":false,"pageCount":59,"score":0,"slideshowId":"48704899","sourceName":"li_interact","strippedTitle":"3673-mosfet","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/3673mosfet-150528123937-lva1-app6891-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"The document discusses the MOS transistor and its operation. It begins by describing the components and structure of the MOS transistor, including the polysilicon gate, aluminum contacts, and silicon dioxide layer. It then discusses the energy band diagrams and how applying different gate voltages results in accumulation, depletion, or inversion at the surface. The document also covers the threshold voltage, its dependence on factors like doping and oxide thickness, and its impact on MOSFET operation. It concludes by deriving the MOSFET drain current equation using the gradual channel approximation approach.","tags":[],"url":"https://www.slideshare.net/dsvidhya/3673-mosfet","userLogin":"dsvidhya","userName":"vidhya DS","viewCount":20723},{"algorithmId":"21","displayTitle":"MOSFET AND JFET","isSavedByCurrentUser":false,"pageCount":11,"score":0,"slideshowId":"47696404","sourceName":"li_interact","strippedTitle":"mosfet-and-jfet","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/basicelecronis-150503085738-conversion-gate01-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document discusses MOSFETs and JFETs. It introduces MOSFETs, describing the metal oxide layer and how the electric field controls current. It describes types of MOSFETs and their applications, particularly as switches. Characteristic curves of MOSFETs are also mentioned. The document then introduces JFETs, describing their structure and operation. Applications of JFETs as switches are provided. Advantages and disadvantages of JFETs are listed. Finally, characteristics curves of JFETs, including output and transfer characteristics, are described.","tags":[],"url":"https://www.slideshare.net/slideshow/mosfet-and-jfet/47696404","userLogin":"SumairHassan","userName":"Sumair Hassan","viewCount":8444},{"algorithmId":"21","displayTitle":"memristor","isSavedByCurrentUser":false,"pageCount":49,"score":0,"slideshowId":"3024732","sourceName":"li_interact","strippedTitle":"memristor-3024732","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/memory-100129112959-phpapp02-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"The memristor is a two-terminal electronic component theorized in 1971 as a fourth fundamental circuit element. In 2008, HP Labs created the first physical memristor using titanium dioxide. Memristors behave similarly to synapses in the brain and could be used to build artificial neural networks for applications like neuromorphic computing and non-volatile memory. Major companies and research institutions are now working to further develop memristors and explore their potential applications in the future.","tags":["electronics","forth circuit element","technology"],"url":"https://www.slideshare.net/slideshow/memristor-3024732/3024732","userLogin":"jithoot","userName":"jithoot","viewCount":16500},{"algorithmId":"21","displayTitle":"Mosfet","isSavedByCurrentUser":false,"pageCount":52,"score":0,"slideshowId":"30532061","sourceName":"li_interact","strippedTitle":"mosfet-30532061","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/mosfet-140128071402-phpapp02-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document provides an introduction to transistors and MOSFETs. It begins by describing the invention of the transistor in 1947 and defining what a transistor is. It then discusses the main types of transistors - BJT and FET, including MOSFET and JFET. The rest of the document focuses on MOSFETs, explaining what they are, their terminals and symbols, types of MOSFETs like n-MOSFET and p-MOSFET, and how MOSFETs work and are fabricated through processes like photolithography, etching, diffusion, and oxidation. It includes diagrams of MOSFET structure and operation. In the end it briefly discusses CMOS fabrication process flow.","tags":["operation of mosfet","mosfet","fabrication of mosfet"],"url":"https://www.slideshare.net/slideshow/mosfet-30532061/30532061","userLogin":"951384","userName":"Pooja Shukla","viewCount":30329}],"similarTo":[{"algorithmId":"3","displayTitle":"A Survey on Architectural Modifications for Improving Performances of Devices...","isSavedByCurrentUser":false,"pageCount":5,"score":0.4775,"slideshowId":"79282757","sourceName":"cm_text","strippedTitle":"a-survey-on-architectural-modifications-for-improving-performances-of-devices-using-finfet-techniques","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v4i7232-170830105603-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document summarizes research on improving the performance of FinFET devices through architectural modifications. FinFETs are promising replacements for bulk CMOS beyond the 22nm node due to their ability to better control short channel effects. Various techniques are discussed to enhance FinFET performance in terms of power, speed, and area. These include optimizing the fin geometry, gate work functions, strain engineering, and reducing parasitic capacitance. FinFETs also show improvements in noise reduction, scalability, and applications such as SRAM cells compared to planar CMOS devices. Overall, the document reviews how FinFET design modifications can help address challenges in continued device scaling for low power applications.","tags":[],"url":"https://www.slideshare.net/slideshow/a-survey-on-architectural-modifications-for-improving-performances-of-devices-using-finfet-techniques/79282757","userLogin":"irjetjournal","userName":"IRJET Journal","viewCount":311},{"algorithmId":"3","displayTitle":"A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet Technology","isSavedByCurrentUser":false,"pageCount":6,"score":0.4693,"slideshowId":"56425834","sourceName":"cm_text","strippedTitle":"a-noise-tolerant-and-low-power-dynamic-logic-circuit-using-finfet-technology","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/h512015358-151224110918-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"For the improvement of performance and noise tolerance in dynamic logic circuits, a technique is\r\nproposed in this paper. A two-input AND gate is designed and simulated in 32nm technology using FinFET\r\ndevice. Simulation results indicate that the proposed technique provides improvement in noise tolerance of\r\nabout three times and the use of FinFET device reduces the power consumption over the conventional MOSFET\r\ndesigns.","tags":["power consumption","mosfet","finfet"],"url":"https://www.slideshare.net/slideshow/a-noise-tolerant-and-low-power-dynamic-logic-circuit-using-finfet-technology/56425834","userLogin":"ijeraeditor","userName":"IJERA Editor","viewCount":104},{"algorithmId":"3","displayTitle":"Review of Fin FET Technology and Circuit Design Challenges","isSavedByCurrentUser":false,"pageCount":4,"score":0.4328,"slideshowId":"56425846","sourceName":"cm_text","strippedTitle":"review-of-fin-fet-technology-and-circuit-design-challenges","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/m512017881-151224110942-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control\r\nFinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the\r\nexisting technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This\r\npermits to lengthening the gate scaling beyond the planar transistor limits, sustaining a steep subthreshold slope,\r\nbetter performance with bias voltage scaling and good matching due to low doping concentration in the channel.\r\nThere are, still, several challenges and limitations that FinFET technology has to face to be competitive with\r\nother technology options: Fin shape, pitch, isolation, doping, crystallographic orientation and stressing as well as\r\ndevice parasitic, performance and patterning approaches will be discussed.","tags":["fin patterning","sram design","finfet"],"url":"https://www.slideshare.net/slideshow/review-of-fin-fet-technology-and-circuit-design-challenges/56425846","userLogin":"ijeraeditor","userName":"IJERA Editor","viewCount":174},{"algorithmId":"3","displayTitle":"2011-8_FinFET_and_the_Concept_Behind_It.pdf","isSavedByCurrentUser":false,"pageCount":28,"score":0.4291,"slideshowId":"270010585","sourceName":"cm_text","strippedTitle":"2011-8_finfet_and_the_concept_behind_it-pdf","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/2011-8finfetandtheconceptbehindit-240702054145-a6f3eefa-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"PPT","tags":[],"url":"https://www.slideshare.net/slideshow/2011-8_finfet_and_the_concept_behind_it-pdf/270010585","userLogin":"SavioS3","userName":"SavioS3","viewCount":16},{"algorithmId":"3","displayTitle":"Presentation finfet - SAGAR GURUNG.pptx.pdf","isSavedByCurrentUser":false,"pageCount":19,"score":0.4237,"slideshowId":"267181249","sourceName":"cm_text","strippedTitle":"presentation-finfet-sagar-gurungpptxpdf","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/presentationfinfet-sagargurung-240409143402-07603b7a-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This is a presentation containing finfet transistors and their application and advantage over other devices.","tags":[],"url":"https://www.slideshare.net/slideshow/presentation-finfet-sagar-gurungpptxpdf/267181249","userLogin":"batpad","userName":"batpad","viewCount":276},{"algorithmId":"3","displayTitle":"C42042729","isSavedByCurrentUser":false,"pageCount":3,"score":0.4219,"slideshowId":"31881187","sourceName":"cm_text","strippedTitle":"c42042729","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/c42042729-140304032120-phpapp02-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology \u0026 science, Power Electronics, Electronics \u0026 Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing \u0026 Low Power VLSI Design etc.","tags":[],"url":"https://www.slideshare.net/slideshow/c42042729/31881187","userLogin":"ijeraeditor","userName":"IJERA Editor","viewCount":253},{"algorithmId":"3","displayTitle":"Minor report","isSavedByCurrentUser":false,"pageCount":22,"score":0.4206,"slideshowId":"251347545","sourceName":"cm_text","strippedTitle":"minor-report-251347545","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/minorreport-220314203245-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document is a project report submitted for the degree of Master of Technology in Electronics and Communication Engineering. It discusses the design of FinFET-based nano-electronic circuits. Specifically, it analyzes different types of FinFET devices including shorted-gate, independent-gate, and asymmetric gate FinFETs. It also compares different FinFET-based standard cell designs including inverters and NAND2 gates using these different FinFET configurations in terms of area, delay, and leakage. Simulation results showing the output of a FinFET inverter are also presented. The document provides an overview of FinFET technology and circuits from the device to the circuit level.","tags":[],"url":"https://www.slideshare.net/slideshow/minor-report-251347545/251347545","userLogin":"ShamimAhmed680298","userName":"ShamimAhmed680298","viewCount":157},{"algorithmId":"3","displayTitle":"FETs as a Congruous Hardware in Embedded Technology and Sensors","isSavedByCurrentUser":false,"pageCount":18,"score":0.4191,"slideshowId":"249915569","sourceName":"cm_text","strippedTitle":"fets-as-a-congruous-hardware-in-embedded-technology-and-sensors","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/ije-511-210804061215-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document discusses different types of field effect transistors (FETs) that can be used in embedded technology and sensors. It classifies FETs based on the number of gates (single gate, double gate, tri gate, gate all around), arrangement (planar, non-planar), and composition materials (silicon, germanium, gallium arsenide, indium gallium arsenide, graphene). Multi-gate FETs like tri-gate and gate-all-around FETs are presented as promising technologies for future embedded processors that can support advanced machine learning algorithms through higher performance. The ideal FET technology depends on factors like material availability, switching speed, power dissipation, and scaling","tags":["fet arrangement","technologies","benchmarks"],"url":"https://www.slideshare.net/CSCJournals/fets-as-a-congruous-hardware-in-embedded-technology-and-sensors","userLogin":"CSCJournals","userName":"CSCJournals","viewCount":74},{"algorithmId":"3","displayTitle":"Kg3418451855","isSavedByCurrentUser":false,"pageCount":11,"score":0.413,"slideshowId":"25193789","sourceName":"cm_text","strippedTitle":"kg3418451855","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/kg3418451855-130813005428-phpapp02-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology \u0026 science, Power Electronics, Electronics \u0026 Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing \u0026 Low Power VLSI Design etc.","tags":[],"url":"https://www.slideshare.net/ijeraeditor/kg3418451855","userLogin":"ijeraeditor","userName":"IJERA Editor","viewCount":305},{"algorithmId":"3","displayTitle":"btech minor projectppt.pptx nanowire fet","isSavedByCurrentUser":false,"pageCount":11,"score":0.4038,"slideshowId":"276109323","sourceName":"cm_text","strippedTitle":"btech-minor-projectppt-pptx-nanowire-fet","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/btechminorprojectppt-250228045025-cbb4c7ef-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"nanowire fet","tags":[],"url":"https://www.slideshare.net/slideshow/btech-minor-projectppt-pptx-nanowire-fet/276109323","userLogin":"PreetjotKaur2","userName":"PreetjotKaur2","viewCount":2},{"algorithmId":"3","displayTitle":"Analysis of FinFET and CNTFET based HybridCMOS Full Adder Circuit","isSavedByCurrentUser":false,"pageCount":6,"score":0.4021,"slideshowId":"254823692","sourceName":"cm_text","strippedTitle":"analysis-of-finfet-and-cntfet-based-hybridcmos-full-adder-circuit","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/irjet-v9i1189-221208094852-3dd55b22-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document analyzes and compares FinFET and CNTFET based hybrid CMOS full adder circuits. It proposes both a FinFET based and CNTFET based 10-transistor hybrid CMOS full adder circuit. The circuits were simulated in 32nm, 16nm, and 10nm technologies to calculate power consumption, delay, and power-delay product. The analysis aims to determine which device, FinFET or CNTFET, is more efficient for the hybrid CMOS full adder circuit based on the simulation results.","tags":["irjet"],"url":"https://www.slideshare.net/slideshow/analysis-of-finfet-and-cntfet-based-hybridcmos-full-adder-circuit/254823692","userLogin":"irjetjournal","userName":"IRJET Journal","viewCount":27},{"algorithmId":"3","displayTitle":"Multiple gate field effect transistors for","isSavedByCurrentUser":false,"pageCount":6,"score":0.4004,"slideshowId":"64941807","sourceName":"cm_text","strippedTitle":"multiple-gate-field-effect-transistors-for","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/multiplegatefield-effecttransistorsfor-160812140956-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document provides a review of multiple gate field-effect transistors (MuGFETs), also known as FinFETs, as promising candidates to enable continued CMOS scaling. It discusses the motivation for multigate transistors due to short channel effects. It then summarizes the evolution of FinFET technologies, including variants like omega-gate and pi-gate FinFETs. Fabrication techniques like resist-defined fin and spacer-defined fin patterning are briefly outlined. Performance metrics like mobility, saturation velocity, transconductance and voltage gain are compared between FinFETs and planar MOSFETs based on measurements. FinFETs show lower resistance but higher voltage gain due to lower output conductance.","tags":[],"url":"https://www.slideshare.net/slideshow/multiple-gate-field-effect-transistors-for/64941807","userLogin":"esatjournals","userName":"eSAT Journals","viewCount":1651},{"algorithmId":"3","displayTitle":"Physical Scaling Limits of FinFET Structure: A Simulation Study","isSavedByCurrentUser":false,"pageCount":10,"score":0.3999,"slideshowId":"96998778","sourceName":"cm_text","strippedTitle":"physical-scaling-limits-of-finfet-structure-a-simulation-study-96998778","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/2111vlsics03-180514055645-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,\r\nas this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.","tags":["double gate","triple gate","underlap"],"url":"https://www.slideshare.net/slideshow/physical-scaling-limits-of-finfet-structure-a-simulation-study-96998778/96998778","userLogin":"vlsics","userName":"VLSICS Design","viewCount":24},{"algorithmId":"3","displayTitle":"Physical Scaling Limits of FinFET Structure: A Simulation Study","isSavedByCurrentUser":false,"pageCount":10,"score":0.3999,"slideshowId":"96998650","sourceName":"cm_text","strippedTitle":"physical-scaling-limits-of-finfet-structure-a-simulation-study","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/2111vlsics03-180514055549-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document summarizes a simulation study on the physical scaling limits of FinFET structures. It analyzes the scaling limits of double gate underlap and triple gate overlap FinFET structures using 2D and 3D computer simulations. Key findings include:\n\n1) For double gate FinFETs, DIBL and SS increase abruptly when the ratio of gate length to fin thickness (L/Tfin) goes below 1.5, limiting scaling. \n\n2) For triple gate FinFETs, both fin thickness and height can control short channel effects, but fin thickness is found to be a more dominant parameter. DIBL and SS increase as the ratio of effective gate length to fin thickness (Leff/Tfin) decreases","tags":["double gate","triple gate","underlap"],"url":"https://www.slideshare.net/slideshow/physical-scaling-limits-of-finfet-structure-a-simulation-study/96998650","userLogin":"vlsics","userName":"VLSICS Design","viewCount":19},{"algorithmId":"3","displayTitle":"IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C...","isSavedByCurrentUser":false,"pageCount":13,"score":0.3934,"slideshowId":"133830828","sourceName":"cm_text","strippedTitle":"impact-of-device-parameters-of-triple-gate-soifinfet-on-the-performance-of-cmos-inverter-at-22nm","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/3512vlsics07-190301082624-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document summarizes a simulation-based study of the impact of device parameters on the performance of 22nm triple gate SOI FinFETs. Device parameters like fin width, fin height, and gate oxide thickness were varied and their effects on short channel effects, on-current, off-current, and gate leakage current were analyzed. It was found that increasing fin width and height improved on-current but also increased off-current and short channel effects. Reducing fin thickness lowered off-current, while reducing fin height decreased gate leakage. The performance and static power of a CMOS inverter built using the FinFETs was also evaluated.","tags":["dibl","process and device simulation","sces"],"url":"https://www.slideshare.net/slideshow/impact-of-device-parameters-of-triple-gate-soifinfet-on-the-performance-of-cmos-inverter-at-22nm/133830828","userLogin":"vlsics","userName":"VLSICS Design","viewCount":103},{"algorithmId":"3","displayTitle":"ZnO based transparent electronics","isSavedByCurrentUser":false,"pageCount":39,"score":0.3848,"slideshowId":"41946343","sourceName":"cm_text","strippedTitle":"zno-based-transparent-electronics","thumbnail":"https://cdn.slidesharecdn.com/ss_thumbnails/znobasedtransparentelectronics-141124054255-conversion-gate02-thumbnail.jpg?width=600\u0026height=600\u0026fit=bounds","description":"This document discusses transparent electronic devices based on zinc oxide (ZnO), including ZnO thin-film transistors (TFTs), Schottky diodes, and metal-semiconductor field-effect transistors (MESFETs). It also describes new applications using these devices, such as for display technology and transparent integrated circuits. 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You may\nwant to use illustrations in your answer to the questions, and mark them up accordingly as part of\nanswering the questions. If you take illustrations from some source (including the IEEE\nSpectrum articles) please make sure this is properly cited.\nhttp://spectrum.ieee.org/semiconductors/nanotechnology/the-next-highperformance-transistor-\ncould-be-made-from-lateral-nanowires Describe a FINFET and how it works. How is it different\nthan the planar MOSFET described in the first 5 slides of the TFET lecture? Is the FINFET a\nquantum device? Give reasons why or why not. How is the nanowire device described here\ndifferent than the FINFET? Why is this difference an advantage for the nanowire device? They\none problem with the nanowire device is capacitive coupling. What is this and explain why it is a\nproblem with the nanowire device?\nSolution\n1)\nThe FinFET technology promises to provide the deliver superior levels of scalability needed to\nensure that the current progress with increased levels of integration within integrated circuits can\nbe maintained.\nThe FinFET offers many advantages in terms of IC processing that mean that it has been adopted\nas a major way forwards for incorporation within IC technology.\nFinFET technology has been born as a result of the relentless increase in the levels of\nintegration. The basic tenet of Moore\\'s law has held true for many years from the earliest years\nof integrated circuit technology. Essentially it states that the number of transistors on a given\narea of silicon doubles every two years.\nSome of the landmark chips of the relatively early integrated circuit era had a low transistor\ncount even though they were advanced for the time. 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