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<p>在超宽带隙半导体领域，研究者们正致力于开发具有超高增益的深紫外（DUV）光电探测器，以期达到与光电倍增管（PMT）相媲美的性能。这些探测器对于200-280纳米波长范围内的日盲检测和通信至关重要，因为它们能够提供高灵敏度、高速度、高光谱选择性、高信噪比和高稳定性。然而，现有的基于超宽带隙半导体的探测器，如AlGaN和Ga2O3，面临着高工作电压、高晶格缺陷密度、相偏析问题以及对磁场敏感性等挑战，限制了它们在性能上的进一步发展。金刚石作为一种具有超宽带隙、高热导率、化学惰性、高绝缘性和辐射抗性的材料，被认为是制造DUV光电探测器的理想候选材料。金刚石基光电探测器的发展已经取得了一定的进展，但灵敏度和整体性能仍需进一步提升，以满足实际应用的需求。研究者们正在探索通过表面状态和深层缺陷的协同效应，实现在低电压下工作的超高增益DUV光电探测器，以期解决单片集成的挑战，并推动与集成电路兼容的DUV探测器技术的发展。</p> <p><strong>二、研究进展</strong></p> <p><strong>日本国立材料研究所廖梅勇团队证明了利用Ib型单晶金刚石（SCD）衬底表面态和深层缺陷的协同效应，可以实现低工作电压（<5 V）的超高增益DUV光电探测器（PD）。</strong>金刚石DUV- PD的整体光响应，如灵敏度、暗电流、光谱选择性和响应速度，可以通过SCD衬底表面的氢或氧终止来简单地定制。在220 nm光下，DUV响应率和外量子效率分别超过2.5 × 104A/W和1.4 × 107%，与PMT相当。DUV/可见光抑制比（R220 nm/R400 nm）高达6.7 × 105。深氮缺陷耗尽二维空穴气体提供了低暗电流，在DUV照射下电离氮的填充产生了巨大的光电流。表面态和本体深度缺陷的协同效应为开发与集成电路兼容的DUV探测器开辟了道路。</p> <p><strong>三、图文简介</strong></p> <p style="text-align: center;"><strong><img src="http://www.casmita.com/file/upload/202412/17/162339782.png" width="553" height="330" alt="" /></strong></p> <p style="text-align: center;">图1 能带图和表面电导率。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202412/17/162350882.png" width="508" height="380" alt="" /></p> <p style="text-align: center;">图2 光电探测器在暗光和DUV光下的I-V特性。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202412/17/162359752.png" width="490" height="387" alt="" /></p> <p style="text-align: center;">图3 光响应特性与氧化时间的关系。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202412/17/162408892.png" width="489" height="372" alt="" /></p> <p style="text-align: center;">图4 光子晶体的时变光响应。</p> <p>原文链接：https://doi.org/10.1002/adfm.202420238.</p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=17455');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=17455"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div 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