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中国科大微电子学院在GaN HEMT开关瞬态建模方向取得新进展_技术_新闻资讯_半导体产业网

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(a) DPT测试平台; (b) 开关瞬态等效电路模型; 400 V阻断电压下, GaN HEMT开关瞬态实测波形与使用考虑动态栅极电容特性模型的仿真波形: (c) 关断瞬态, (d) 开通瞬态。</p> <p>中国科大微电子学院杨树教授为论文通讯作者,博士生杜佳宏、课题组毕业生孙才恩和硕士生唐秋逸为论文共同第一作者,浙江大学吴新科教授与董泽政研究员为论文合作者。此项研究工作得到了国家重点研发计划、国家自然科学基金、台达电力电子科教发展计划等项目的资助。</p> <p>文章链接:10.1109/TPEL.2024.3465013</p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=17006');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=17006"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> <a href="http://www.casmita.com/news/search.php?kw="></a><a href="http://www.casmita.com/news/index.php?catid=4"></a> <div class="bui-box single-mode"> <div class="single-mode-rbox"> <div class="single-mode-rbox-inner"> <div 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